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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISC16DP15LMATMA1

Name: ISC16DP15LMATMA1
Brand: Infineon Technologies
SKU: ISC16DP15LMATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISC16DP15LMATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: ISC16DP15LMATMA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Inventory:4,388

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Product details

Overview

ISC16DP15LM from Infineon Technologies is a P-channel enhancement-mode MOSFET optimized for high-voltage industrial switching, featuring -150 V V_DS, 160 mΩ R_DS(on) at V_GS = -4.5 V, -22 A continuous drain current, 100% avalanche tested, and logic-level gate drive compatibility. It serves as a robust high-side switch in DC-DC converters, motor control H-bridges, and power supply OR-ing circuits.

For engineers reviewing the ISC16DP15LM datasheet, ISC16DP15LM pinout, ISC16DP15LM application, or ISC16DP15LM equivalent, key selection criteria include its -150 V blocking capability, low R_DS(on) at 4.5 V gate drive, SuperSO8 thermal performance, integrated body diode recovery characteristics (t_rr = 96.2 ns), and JEDEC-qualified industrial reliability.

Technical Context

This OptiMOS™ Power-Transistor uses trench-gate technology to achieve low on-resistance while maintaining rugged avalanche performance. Its P-channel architecture enables simple high-side configuration without level-shifting circuitry, and the internal body diode supports synchronous rectification and freewheeling in inductive loads.

The device operates in enhancement mode with a gate threshold voltage of -1.6 V (typical), ensuring reliable turn-on at logic-compatible voltages. Thermal resistance R_thJC = 0.42 °C/W enables high-power operation when mounted on PCBs with ≥6 cm² copper area, and dynamic parameters (Q_g = 46–58 nC at -4.5 V) support efficient PWM switching up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-150 V - Supports high-voltage DC bus applications up to 150 V reverse blocking, suitable for industrial 100 V+ systems.
R_DS(on) max	160 mΩ @ V_GS = -4.5 V - Enables low conduction loss in logic-driven high-side switches without external gate drivers.
I_D cont	-22 A @ T_C = 25 °C - Delivers high current capability in compact SuperSO8 package with adequate heatsinking.
E_AS	700 mJ - Confirmed single-pulse avalanche energy rating ensures robustness against inductive switching transients.
t_rr	96.2 ns - Fast reverse recovery time minimizes switching losses and cross-conduction risk in synchronous topologies.
Q_g	46–58 nC @ V_GS = 0 to -4.5 V - Low gate charge enables efficient driving from microcontroller GPIOs or low-power gate drivers.
R_thJC	0.42 °C/W - Enables >100 W power dissipation with modest case-to-heatsink thermal interface, critical for space-constrained designs.

Pinout & Package

Package: PG-TDSON-8 (SuperSO8), surface-mount, exposed drain pad for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1–3 (Source)	Source terminal (P-channel)	Common reference node for gate drive and load return; pins 1–3 are internally bonded for low-inductance source connection.
4 (Gate)	Control input	Logic-level compatible gate requiring negative voltage relative to source; low C_iss (3500 pF) eases drive requirements.
5–8 (Drain)	High-voltage output / power path	Internally connected to exposed thermal pad; carries full load current and provides primary thermal conduction path to PCB.

Key Features

Feature	Design Value
P-channel logic-level operation	Guaranteed turn-on at V_GS ≤ -4.5 V, eliminating need for gate driver ICs in many industrial control applications.
100% avalanche tested	Each unit validated for 700 mJ single-pulse energy, enabling reliable operation in unclamped inductive switching environments.
Integrated body diode with fast t_rr	96.2 ns reverse recovery time and 396.4 nC Q_rr support efficient freewheeling in half-bridge and buck converter topologies.
JEDEC-qualified for industrial use	Rated for -55 °C to +175 °C junction temperature and qualified per industrial reliability standards (IEC 60747-17).
Pb-free and halogen-free	RoHS-compliant lead plating and IEC61249-2-21 compliant materials ensure environmental compliance without performance trade-offs.

Applications

Industrial DC-DC Converters

Motor Control H-Bridges

Use Scenario: High-efficiency isolated or non-isolated step-down converters for programmable logic controllers (PLCs) and sensor interfaces.

IC Role / Device Role: High-side synchronous rectifier or main switching FET in buck or flyback topologies.

Use Value: Low R_DS(on) at 4.5 V gate drive reduces conduction loss; fast t_rr prevents shoot-through during dead-time transitions.

Use Scenario: Bidirectional 24–48 V brushed DC motor drives in factory automation and robotics.

IC Role / Device Role: High-side switch in H-bridge upper quadrant, paired with N-channel low-side FETs.

Use Value: Eliminates need for floating gate drivers; avalanche rating withstands back-EMF spikes during rapid deceleration.

Power Supply OR-ing Circuits

Hot-Swap Controllers

Use Scenario: Redundant 48 V telecom or server power distribution with automatic load sharing between supplies.

IC Role / Device Role: Back-to-back P-channel MOSFET used as ideal diode replacement in OR-ing configuration.

Use Value: Low forward voltage drop (V_SD = -0.8 V) and low R_DS(on) minimize power loss and heat generation vs. Schottky diodes.

Use Scenario: Inrush current limiting and fault protection in modular power modules and blade servers.

IC Role / Device Role: Main pass element controlling hot-plug sequencing and overcurrent shutdown.

Use Value: Robust SOA (Safe Operating Area) and 700 mJ E_AS enable reliable handling of capacitive load surges and short-circuit events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16PF15	V_DS = -150 V, R_DS(on) = 180 mΩ @ -4.5 V, Q_g = 62 nC - higher gate charge and on-resistance than ISC16DP15LM.	Lower switching efficiency in high-frequency (>100 kHz) applications due to higher Q_g and slower t_r/t_f.	Acceptable where gate drive strength is sufficient and thermal margin exists; less optimal for compact, thermally constrained layouts.
IXTP16P15X2	V_DS = -150 V, R_DS(on) = 170 mΩ @ -4.5 V, TO-220 package - lacks exposed drain pad and has higher R_thJA (62 °C/W).	Requires external heatsink and larger board area; unsuitable for ultra-thin or high-density industrial PCBs.	Preferred only when through-hole mounting or legacy footprint compatibility is mandatory; inferior thermal performance in SMT designs.

Compared with STP16PF15 and IXTP16P15X2, ISC16DP15LM delivers lower conduction loss, superior thermal dissipation via SuperSO8, and faster switching-making it the optimal choice for space- and efficiency-critical industrial power stages.

Availability

ISC16DP15LM is available at Aetrix Electronics and suitable for industrial DC-DC converters, motor control H-bridges, and power supply OR-ing circuits requiring stable component supply, long-term lifecycle assurance, and JEDEC-qualified reliability.

Supply support for ISC16DP15LM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control solutions, with leadership in silicon and wide-bandgap technologies.

This device belongs to the OptiMOS™ P-channel power transistor product line, engineered specifically for high-efficiency, high-reliability industrial switching applications demanding logic-level drive, rugged avalanche performance, and compact thermal packaging.

FAQ

What is the maximum safe operating junction temperature for ISC16DP15LM?

The absolute maximum junction temperature is +175 °C, and the device is fully qualified for continuous operation across this range per JEDEC JESD47. Derating of I_D and P_tot is required above T_C = 25 °C, as shown in Diagrams 1 and 2 of the datasheet; thermal design must maintain T_j ≤ 175 °C under worst-case ambient and power dissipation conditions.

Can ISC16DP15LM be driven directly by a 3.3 V microcontroller GPIO?

No - as a P-channel MOSFET, ISC16DP15LM requires a gate voltage *lower* than its source to turn on. With source tied to system rail (e.g., +48 V), a 3.3 V GPIO cannot pull the gate sufficiently negative. A dedicated gate driver or level-shifter generating V_GS ≤ -4.5 V relative to source is required for reliable enhancement-mode operation.

Does ISC16DP15LM include an integrated body diode, and what are its key ratings?

Yes - it features a monolithic body diode rated for -22 A continuous forward current (I_S) and -86.1 A pulsed current (I_S,pulse). Key diode parameters include V_SD = -0.8 to -1.2 V at -10 A, t_rr = 96.2 ns (typ), and Q_rr = 396.4 nC (typ), enabling use in freewheeling and synchronous rectification roles without external diodes.

How does the SuperSO8 package improve thermal performance compared to standard SO-8?

The SuperSO8 (PG-TDSON-8) package incorporates an exposed drain pad that serves as both electrical connection and primary thermal path. With R_thJC = 0.42 °C/W - significantly lower than standard SO-8's ~3–5 °C/W - it enables >100 W power dissipation when soldered to ≥6 cm² of 70 µm copper, making it suitable for high-current industrial power stages without discrete heatsinks.

ISC16DP15LMATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

ISC16DP15LMATMA1 FAQ

1.How can I place an order for ISC16DP15LMATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISC16DP15LMATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISC16DP15LMATMA1 reliable?

The price and inventory of ISC16DP15LMATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISC16DP15LMATMA1 is usually 5 days.

3.What payment methods are accepted for ISC16DP15LMATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISC16DP15LMATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISC16DP15LMATMA1?

ISC16DP15LMATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISC16DP15LMATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISC16DP15LMATMA1?

For technical support, including ISC16DP15LMATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISC16DP15LMATMA1 requirements.

6.How does Aetrix verify that ISC16DP15LMATMA1 is sourced from the original manufacturer or authorized distributors?

All ISC16DP15LMATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISC16DP15LMATMA1 meets industry standards.

7.What is the process for return or replacement of ISC16DP15LMATMA1?

All ISC16DP15LMATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISC16DP15LMATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISC16DP15LMATMA1 part is unused and in its original packaging.

Return procedure for ISC16DP15LMATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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