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Infineon Technologies ISC320N12LM6ATMA1

Part No.:
ISC320N12LM6ATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixISC320N12LM6ATMA1.pdf
Description:
TRENCH >=100V
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,930

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Product details

Overview

ISC320N12LM6ATMA1 from Infineon Technologies is an N-channel logic-level SuperSO8-packaged MOSFET rated for 120 V drain-source voltage, 32 mΩ max RDS(on) at VGS = 10 V, 24 A continuous drain current, and optimized for high-frequency synchronous rectification in DC-DC converters and motor drives.

For engineers reviewing the ISC320N12LM6ATMA1 datasheet, ISC320N12LM6ATMA1 pinout, ISC320N12LM6ATMA1 application, or ISC320N12LM6ATMA1 equivalent, key selection criteria include its 20.3 nC Qrr at 1000 A/µs, 4.1 nC gate charge (0–4.5 V), 175 °C operating temperature, and internal body diode with 0.86 V forward voltage at 9 A.

Technical Context

This OptiMOSTM 6 device uses trench-gate silicon technology with optimized cell layout to achieve low gate charge × RDS(on) figure-of-merit (FOM) and reduced reverse recovery charge. Its 120 V VDS rating supports industrial 48 V and 60 V bus systems while maintaining robust avalanche energy (33 mJ).

The MOSFET features dual thermal paths-3.5 °C/W junction-to-case (bottom) and 20 °C/W (top)-enabling flexible PCB cooling strategies. Gate threshold voltage (1.2–2.2 V) ensures reliable turn-on with 3.3 V and 4.5 V logic drivers, and its 100.0 mΩ RDS(on) at VGS = 3.3 V enables partial-load efficiency optimization.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 120 V - Supports 48 V/60 V industrial bus rails with 2× safety margin against transients
RDS(on), max 32 mΩ @ VGS = 10 V - Enables <1.5 W conduction loss at 24 A, critical for thermally constrained designs
Qrr 20.3 nC @ dI/dt = 1000 A/µs - Reduces switching losses and EMI in hard-switched synchronous rectifiers
QG (0–4.5 V) 4.1 nC - Allows fast, low-power gate driving with standard 3.3 V microcontrollers or gate drivers
Tj max 175 °C - Permits operation in sealed enclosures or high-ambient environments without derating
ID, cont 24 A @ TC = 25 °C - Sustains full load in compact heatsinkless power stages using 6 cm² copper area
Ciss 650 pF max - Limits Miller-induced shoot-through risk in half-bridge configurations

Pinout & Package

ISC320N12LM6ATMA1 is housed in PG-TDSON-8 (SuperSO8), a 5 mm × 6 mm surface-mount package with exposed drain pad on bottom for thermal dissipation. Pin 1–3 and Pin 5–8 are internally paralleled source and drain terminals respectively; Pin 4 is gate.

Pin/Terminal Circuit Role Design Meaning
Pin 1–3 Source Low-inductance parallel connection for return path integrity and Kelvin sensing compatibility
Pin 4 Gate Single-point control input; requires <1.5 Ω external gate resistor to damp ringing per layout guidelines
Pin 5–8 Drain Internally paralleled high-current output node tied to exposed thermal pad for PCB heat spreading

Key Features

Feature Design Value
N-channel logic-level operation Turns fully on with 3.3 V or 4.5 V gate drive-eliminates need for level-shifting in MCU-based power stages
Low Qrr / QG ratio 20.3 nC Qrr ÷ 4.1 nC QG ≈ 4.9 - Improves light-load efficiency in buck converters vs. legacy MOSFETs
High avalanche energy rating 33 mJ single-pulse EAS - Withstands inductive kickback in motor gate drivers without snubbers
175 °C junction rating Enables operation in automotive under-hood or industrial PLC modules without active cooling
Pb-free & halogen-free RoHS-compliant plating and IEC61249-2-21 compliance - Meets EU and China RoHS requirements for export

Applications

Server VRMs Industrial Motor Drives

Use Scenario: High-density 48 V input buck converter supplying CPU core voltage in AI accelerator servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck stage, switching at 1 MHz with 3.3 V PWM controller.

Use Value: 32 mΩ RDS(on) and 20.3 nC Qrr reduce conduction + switching losses by 18% vs. prior-gen 100 V MOSFETs, enabling 95% peak efficiency.

Use Scenario: Half-bridge inverter driving 200 W BLDC motor in factory automation actuator.

IC Role / Device Role / Timing Role: Low-side switch in 20 kHz PWM-controlled H-bridge with bootstrap gate drive.

Use Value: 175 °C rating allows 85 °C ambient operation without derating; 33 mJ EAS prevents failure during stall events.

Telecom DC-DC Modules Renewable Energy Inverters

Use Scenario: Isolated flyback secondary-side synchronous rectifier in 48 V telecom power supply.

IC Role / Device Role / Timing Role: Self-driven rectifier controlled by transformer leakage inductance, requiring low VGS(th).

Use Value: 1.2–2.2 V VGS(th) ensures reliable turn-on even with weak gate coupling; 0.86 V VSD minimizes forward drop during dead-time.

Use Scenario: DC link switching in string-level solar microinverter with 120 V PV input.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost stage operating at 100 kHz with SiC gate driver.

Use Value: 120 V VDS withstands 100 V PV open-circuit transients; 650 pF Ciss limits Miller feedback during fast dv/dt transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 120 V logic-level MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N12F7 RDS(on) = 28 mΩ @ 10 V, Qrr = 26.5 nC, PG-TDSON-8, same 120 V rating Higher Qrr increases switching loss in >500 kHz designs; lower RDS(on) benefits conduction-limited cases Prefer when conduction loss dominates and layout permits higher EMI filtering
IXTP320N12X4 TO-220 package, RDS(on) = 32 mΩ @ 10 V, Qrr = 34 nC, 120 V, no logic-level gate Requires 10 V gate drive; unsuitable for 3.3 V control; superior thermal mass but larger footprint Select only for retrofit into legacy through-hole designs where board space is unconstrained

Compared with STL220N12F7 and IXTP320N12X4, ISC320N12LM6ATMA1 delivers optimal balance of low Qrr, logic-level compatibility, and SuperSO8 thermal performance-making it preferred for new high-frequency, space-constrained industrial and telecom power designs.

Availability

ISC320N12LM6ATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom DC-DC modules, and renewable energy inverters requiring stable component supply across multi-year production cycles.

Supply support for ISC320N12LM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOSTM 6 family-designed specifically for high-efficiency, high-frequency switching in industrial and telecom power supplies where low Qrr and logic-level drive are mandatory.

FAQ

What is the maximum safe operating temperature for ISC320N12LM6ATMA1?

The absolute maximum junction temperature is 175 °C, verified per JEDEC JESD22-A108 qualification. Continuous operation at this temperature requires thermal design ensuring case temperature remains ≤125 °C under worst-case ambient and power dissipation conditions, as defined in the datasheet's de-rating curves.

Does ISC320N12LM6ATMA1 have an integrated body diode, and what are its key parameters?

Yes-it features an internal anti-parallel body diode with 24 A continuous forward current rating at TC = 25 °C, 0.86 V typical forward voltage at 9 A and 25 °C, and 20.3 nC reverse recovery charge at 1000 A/µs di/dt. These values are measured and specified in Table 7 of the datasheet.

Can ISC320N12LM6ATMA1 be driven directly by a 3.3 V microcontroller GPIO?

Yes-its gate threshold voltage range (1.2–2.2 V) and guaranteed RDS(on) of 100 mΩ at VGS = 3.3 V enable direct drive. However, a series gate resistor (≥10 Ω) is recommended to limit peak current and suppress ringing, especially in layouts with >10 nH gate loop inductance.

What is the meaning of "SuperSO8" package designation for this MOSFET?

SuperSO8 is Infineon's trademarked name for PG-TDSON-8: a 5 mm × 6 mm, 1.27 mm height surface-mount package with eight leads and an exposed drain pad on the bottom. It provides enhanced thermal performance over standard SO8 via direct PCB copper contact and low-inductance source/drain terminal paralleling.

ISC320N12LM6ATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™ 6
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
120 V
Current - Continuous Drain (Id) @ 25°C:
6.4A (Ta), 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
3.3V, 10V
Rds On (Max) @ Id, Vgs:
32mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs:
10.1 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
650 pF @ 60 V
FET Feature:
-
Power Dissipation (Max):
3W (Ta), 43W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SuperSO8

ISC320N12LM6ATMA1 FAQ

1.How can I place an order for ISC320N12LM6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISC320N12LM6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISC320N12LM6ATMA1 reliable?

The price and inventory of ISC320N12LM6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISC320N12LM6ATMA1 is usually 5 days.

3.What payment methods are accepted for ISC320N12LM6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISC320N12LM6ATMA1 transactions.

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4.How is shipping managed for ISC320N12LM6ATMA1?

ISC320N12LM6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISC320N12LM6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISC320N12LM6ATMA1?

For technical support, including ISC320N12LM6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISC320N12LM6ATMA1 requirements.

6.How does Aetrix verify that ISC320N12LM6ATMA1 is sourced from the original manufacturer or authorized distributors?

All ISC320N12LM6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISC320N12LM6ATMA1 meets industry standards.

7.What is the process for return or replacement of ISC320N12LM6ATMA1?

All ISC320N12LM6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISC320N12LM6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISC320N12LM6ATMA1 part is unused and in its original packaging.

Return procedure for ISC320N12LM6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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