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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISK036N03LM5AUSA1

Name: ISK036N03LM5AUSA1
Brand: Infineon Technologies
SKU: ISK036N03LM5AUSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISK036N03LM5AUSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 6-PowerVDFN

Datasheet:: ISK036N03LM5AUSA1.pdf

Description:: TRENCH <= 40V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

ISK036N03LM5AUSA1 from Infineon Technologies is an N-channel 30 V OptiMOSTM 5 power MOSFET in PG-VSON-6 package, featuring 3.6 mΩ max R_DS(on) at V_GS = 10 V, 81 A continuous drain current, and 100% avalanche tested. It serves as a high-efficiency synchronous rectifier or main switch in DC-DC converters for server VRMs and POL modules.

For engineers reviewing the ISK036N03LM5AUSA1 datasheet, ISK036N03LM5AUSA1 pinout, ISK036N03LM5AUSA1 application, or ISK036N03LM5AUSA1 equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, thermal resistance (R_thJC = 1.6 °C/W), and Q_g = 7.2 nC for 4.5 V switching, critical for high-frequency, high-density power stages.

Technical Context

This device uses trench-gate superjunction technology optimized for 30 V industrial and computing applications. Its 2×2 mm PG-VSON-6 package integrates five drain-connected terminals (pins 1,2,5,6 + exposed tab) to minimize parasitic inductance and enhance thermal conduction to PCB copper.

The MOSFET delivers 2.6 mΩ typ R_DS(on) at V_GS = 10 V and 3.3 mΩ at V_GS = 4.5 V, with gate plateau voltage of 2.5 V and Q_gd = 2.7 nC - enabling fast, low-loss switching in 500 kHz–1 MHz buck converters with minimal Miller-induced shoot-through risk.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V/24 V input rails with 20 % derating margin.
R_DS(on), max	3.6 mΩ at V_GS = 10 V - Enables ≤1.5 W conduction loss at 81 A, supporting high-current POL designs.
I_D, cont	81 A at T_C = 25 °C - Sustains full load in compact VRMs when mounted on ≥6 cm² copper area.
Q_g	7.2 nC (0–4.5 V) - Supports efficient 1 MHz switching with <10 ns turn-on delay and 1.4 ns rise time.
R_thJC	1.6 °C/W - Delivers 39 W power dissipation capability with minimal junction-to-case temperature rise.
E_AS	7 mJ - Withstands single-pulse inductive energy without failure in hard-switched topologies.
V_GS(th)	1.2–2.0 V - Ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level gate drivers.

Pinout & Package

PG-VSON-6 package with exposed drain tab on underside for thermal and electrical connection. Pin 4 is source; pins 1,2,5,6 and tab are internally connected to drain; pin 3 is gate.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6, tab	Drain	Five parallel drain connections reduce package inductance (<0.5 nH) and improve thermal transfer to PCB.
3	Gate	Single gate terminal with 0.7–1.2 Ω internal gate resistance - simplifies external gate driver layout.
4	Source	Isolated source terminal enables Kelvin sensing and accurate gate drive referencing in high-side configurations.

Key Features

Feature	Design Value
Lowest R_DS(on) in 2×2 mm package	3.6 mΩ max at 10 V - achieves >95 % efficiency in 12 V→1 V, 60 A point-of-load converters.
100 % avalanche rated	7 mJ single-pulse E_AS - eliminates need for external snubbers in flyback or synchronous rectifier circuits.
Superior thermal resistance	R_thJC = 1.6 °C/W - enables 39 W dissipation with <60 °C ΔT from case to junction under defined PCB conditions.
Optimized for 4.5 V drive	R_DS(on) = 3.3 mΩ typ at V_GS = 4.5 V - supports direct interface with 5 V microcontroller GPIO or dedicated gate drivers.
Pb-free & halogen-free	RoHS-compliant plating per IEC61249-2-21 - meets environmental compliance for industrial and telecom equipment.

Applications

Server Voltage Regulator Modules (VRMs)

Industrial DC-DC Converters

Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) from 12 V bus.

IC Role / Device Role / Timing Role: Primary synchronous rectifier switch operating at 500 kHz–1 MHz with forced PWM control.

Use Value: 3.6 mΩ R_DS(on) and 7.2 nC Q_g reduce conduction and switching losses, enabling >94 % peak efficiency at 60 A output.

Use Scenario: Isolated 24 V to 5 V/3.3 V DC-DC supply for PLC I/O modules and motor drives.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology.

Use Value: Low V_GS(th) (1.2–2.0 V) ensures reliable turn-on with self-driven gate bias, eliminating auxiliary winding complexity.

Telecom Power Supplies

Automotive ADAS Power Management

Use Scenario: 48 V to 12 V intermediate bus converter in 5G base station power architecture.

IC Role / Device Role / Timing Role: High-side main switch in interleaved buck stage handling up to 40 A per phase.

Use Value: Five-drain-terminal layout minimizes loop inductance, reducing EMI and voltage overshoot during 100 A/µs di/dt transitions.

Use Scenario: 12 V input to 3.3 V/5 V power rail for radar sensor SoCs and camera modules.

IC Role / Device Role / Timing Role: Compact, thermally robust POL switch in space-constrained ADAS ECUs.

Use Value: JEDEC-qualified industrial temp range (−55 to 150 °C) and 100 % avalanche testing ensure reliability in under-hood environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 4.2 mΩ max at 4.5 V; Q_g = 8.7 nC; PG-TSDSON-6 package with 4 drain pads.	Slightly higher conduction loss and gate charge - less optimal for >1 MHz operation.	Preferred where legacy footprint compatibility with IR's TSDSON-6 is required over lowest R_DS(on).
SISD120DN-T1-GE3	R_DS(on) = 3.8 mΩ max at 4.5 V; Q_g = 6.8 nC; same PG-VSON-6 footprint but lower E_AS (5.5 mJ).	Lower avalanche ruggedness limits use in unclamped inductive switching.	Valid for non-avalanche-critical applications where gate charge minimization outweighs energy handling needs.

Compared with IRLHS6342TRPBF and SISD120DN-T1-GE3, ISK036N03LM5AUSA1 offers the lowest R_DS(on) and highest E_AS in the 2×2 mm class, making it optimal for high-reliability, high-efficiency computing and telecom power stages where thermal density and transient robustness are prioritized.

Availability

ISK036N03LM5AUSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom power supplies requiring stable component supply, JEDEC industrial qualification, and long-term lifecycle support.

Supply support for ISK036N03LM5AUSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOSTM 5 family - engineered for ultra-low R_DS(on) and high power density in 30 V logic-level MOSFETs targeting next-generation computing, telecom, and industrial power conversion.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The ISK036N03LM5AUSA1 supports 51 A continuous drain current at T_C = 100 °C and V_GS = 10 V, as specified in Table 2 of the datasheet. This rating assumes proper PCB thermal design with 6 cm² copper area and vertical mounting in still air.

Does this MOSFET require a gate resistor for stability?

A gate resistor is recommended to dampen ringing and control dV/dt; typical values range from 1 Ω to 5 Ω depending on driver strength and layout. The internal gate resistance is 0.7–1.2 Ω, so external series resistance should be selected to achieve total R_G ≈ 2–4 Ω for 1 MHz operation.

Can ISK036N03LM5AUSA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (shown in Diagram 9) enables inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and thermal coupling to ensure uniform junction temperature across devices.

Is the exposed drain tab electrically isolated from other pins?

No - the exposed tab is internally connected to drain (pins 1,2,5,6). It must be soldered to a PCB copper pour tied to the drain net for both thermal performance and electrical functionality. No insulation layer is required or recommended beneath the tab.

ISK036N03LM5AUSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 6-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 16.5A (Ta), 81A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21.5 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 39W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-VSON-6-1

ISK036N03LM5AUSA1 FAQ

1.How can I place an order for ISK036N03LM5AUSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISK036N03LM5AUSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISK036N03LM5AUSA1 reliable?

The price and inventory of ISK036N03LM5AUSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISK036N03LM5AUSA1 is usually 5 days.

3.What payment methods are accepted for ISK036N03LM5AUSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISK036N03LM5AUSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISK036N03LM5AUSA1?

ISK036N03LM5AUSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISK036N03LM5AUSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISK036N03LM5AUSA1?

For technical support, including ISK036N03LM5AUSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISK036N03LM5AUSA1 requirements.

6.How does Aetrix verify that ISK036N03LM5AUSA1 is sourced from the original manufacturer or authorized distributors?

All ISK036N03LM5AUSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISK036N03LM5AUSA1 meets industry standards.

7.What is the process for return or replacement of ISK036N03LM5AUSA1?

All ISK036N03LM5AUSA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISK036N03LM5AUSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISK036N03LM5AUSA1 part is unused and in its original packaging.

Return procedure for ISK036N03LM5AUSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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