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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISP13DP06NMSATMA1

Name: ISP13DP06NMSATMA1
Brand: Infineon Technologies
SKU: ISP13DP06NMSATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISP13DP06NMSATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: ISP13DP06NMSATMA1.pdf

Description:: MOSFET P-CH 60V SOT223

Quantity:: RFQ Add To RFQ list

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Inventory:3,000

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Product details

Overview

ISP13DP06NMSATMA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET rated for -60 V drain-source voltage, 125 mΩ max R_DS(on) at V_GS = -10 V and I_D = -2.8 A, with 100% avalanche tested ruggedness and SOT-223-3 package. It serves as a high-reliability load switch or reverse polarity protection device in low-power industrial power supplies and battery management circuits.

For engineers reviewing the ISP13DP06NMSATMA1 datasheet, ISP13DP06NMSATMA1 pinout, ISP13DP06NMSATMA1 application, or ISP13DP06NMSATMA1 equivalent, key selection criteria include verified -60 V blocking capability, low gate charge (Q_g = 20.2 nC), fast switching (t_d(off) = 23 ns), integrated body diode performance (V_SD = -0.78 V @ -1.5 A), and JEDEC-qualified thermal robustness (R_thJA = 70 °C/W).

Technical Context

This OptiMOS™ small-signal transistor operates in enhancement mode with a gate threshold voltage range of -2.1 V to -4 V, enabling direct interface with standard logic-level controllers. Its -60 V V_(BR)DSS and 608 mJ single-pulse avalanche energy support operation in unregulated DC rails and transient-prone environments like automotive body electronics and industrial sensor nodes.

The device features low dynamic capacitances (C_iss = 790 pF, C_oss = 120 pF) and tightly controlled gate plateau voltage (-4.4 V), ensuring predictable turn-on/turn-off behavior under varying temperature (T_j = -55 to +150 °C) and load conditions without external gate driving complexity.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum drain-to-source blocking voltage for reverse polarity protection or high-side switching in ≤60 V systems.
R_DS(on), max	125 mΩ @ V_GS = -10 V, I_D = -2.8 A - Enables <100 mW conduction loss at full rated current, suitable for thermally constrained PCB layouts.
I_D, cont	-2.8 A @ T_A = 25 °C - Continuous current rating with 70 °C/W junction-to-ambient thermal resistance on standard FR4 PCB.
Q_g	20.2 nC - Total gate charge determines driver strength requirement; supports efficient PWM control up to ~500 kHz with minimal gate drive loss.
E_AS	608 mJ - Single-pulse avalanche energy rating confirms ruggedness against inductive switching transients without external snubbers.
V_GS(th)	-2.1 to -4 V - Gate threshold range ensures reliable turn-on with -5 V logic or microcontroller GPIO, avoiding partial enhancement in noisy environments.
C_iss	790 pF - Input capacitance impacts gate drive loop stability and rise/fall time; compatible with low-impedance drivers (R_G,ext = 1.6 Ω used in test).

Pinout & Package

Package: PG-SOT223-3 - Surface-mount plastic package with exposed drain pad for enhanced thermal dissipation; footprint compatible with IPC-7351B SOIC-223 standards.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives negative gate voltage relative to source to enable conduction; requires stable -10 V bias for R_DS(on) spec compliance.
Pin 2 (Drain)	High-side or load-side terminal	Connected to input rail in high-side switch configuration or to load in low-side configuration; electrically tied to exposed pad for thermal path.
Pin 3 (Source)	Reference node	Serves as return path for load current and gate drive reference; must be routed with low inductance to minimize switching overshoot.

Key Features

Feature	Design Value
Pb-free, halogen-free packaging	Complies with RoHS and IEC61249-2-21; eliminates hazardous substances without compromising solderability or thermal cycling reliability.
100% avalanche tested	Each unit validated for 608 mJ single-pulse energy handling, eliminating need for system-level derating in inductive load applications.
Enhancement-mode operation	Normally-off behavior ensures fail-safe shutdown during gate drive loss or controller reset-critical for battery disconnect safety functions.
Optimized gate charge profile	Q_gd/Q_g ratio of ~34% enables clean Miller plateau transition, reducing risk of shoot-through in half-bridge configurations.
Low R_DS(on) temperature coefficient	R_DS(on) increases only 1.6× from 25 °C to 150 °C (per Diagram 9), supporting stable current limiting across full operating range.

Applications

Reverse Polarity Protection

Battery Disconnect Switch

Use Scenario: Prevents damage to downstream circuitry when Li-ion or lead-acid battery is inserted backward in portable medical devices or handheld test equipment.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET configured as ideal diode replacement with near-zero forward voltage drop.

Use Value: Eliminates 0.3–0.7 V diode drop, preserving >98% of battery voltage and extending runtime by up to 15% versus Schottky solutions.

Use Scenario: Safely isolates main battery from MCU and peripherals during deep sleep or fault conditions in smart meters and IoT edge nodes.

IC Role / Device Role / Timing Role: Load switch controlled by microcontroller GPIO to manage system power domains with precise timing.

Use Value: Achieves <1 µA off-state leakage (I_DSS ≤ -100 nA @ 125 °C), minimizing standby current and meeting IEC 62053-21 Class 0.5S requirements.

Industrial Power Supply OR-ing

DC Motor Brake Control

Use Scenario: Enables seamless switchover between redundant 24 V DC power supplies in PLC backplanes and factory automation controllers.

IC Role / Device Role / Timing Role: Low-R_DS(on) P-channel switch implementing active OR-ing with fast response to supply failure.

Use Value: Delivers <150 µs turn-off delay (t_d(off) = 23 ns + PCB trace delay), preventing backfeed and maintaining bus stability during switchover.

Use Scenario: Applies dynamic braking to 12–24 V brushed DC motors in automated door actuators and valve positioners.

IC Role / Device Role / Timing Role: Low-side switch controlling motor winding short-circuit path during deceleration.

Use Value: Body diode V_SD = -0.78 V @ -1.5 A and t_rr = 33 ns minimize braking energy dissipation and reduce MOSFET heating during repeated stop/start cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540NPBF	R_DS(on) = 200 mΩ @ V_GS = -10 V; higher Q_g = 54 nC; TO-220 package	Requires larger PCB area and heatsinking; slower switching limits PWM frequency to ≤100 kHz	Preferable where legacy TO-220 footprint compatibility or higher surge current (I_D,pulse = 66 A) is required over efficiency.
DMG2305UVT-7	R_DS(on) = 48 mΩ @ V_GS = -4.5 V; SOT-23 package; lower V_DS = -20 V	Not suitable for 60 V systems; limited thermal mass restricts continuous current to -1.8 A at 25 °C	Select when space-constrained designs demand ultra-small footprint and operate strictly within 20 V rails with logic-level gate drive.

Compared with IRF9540NPBF and DMG2305UVT-7, ISP13DP06NMSATMA1 uniquely balances -60 V rating, 125 mΩ R_DS(on), and SOT-223 thermal performance-enabling compact, efficient, and rugged switching in 24–48 V industrial and battery-powered systems without TO-220 heatsinks or voltage derating.

Availability

ISP13DP06NMSATMA1 is available at Aetrix Electronics and suitable for reverse polarity protection, battery disconnect switching, and industrial OR-ing applications requiring stable component supply, JEDEC-qualified reliability, and RoHS-compliant manufacturing.

Supply support for ISP13DP06NMSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOS™ small-signal transistor product line, engineered specifically for high-efficiency, space-constrained DC power control in industrial automation, battery-powered equipment, and power supply redundancy systems.

FAQ

What is the maximum safe operating temperature for ISP13DP06NMSATMA1?

The junction temperature must not exceed +150 °C under any condition. At ambient temperatures above 100 °C, the continuous drain current derates linearly from -1.7 A (at 100 °C) to zero at 150 °C, per the datasheet's ID=f(TA) curve. Thermal design must ensure R_thJA ≤ 70 °C/W with ≥6 cm² copper pour on FR4.

Can ISP13DP06NMSATMA1 be driven directly from a 3.3 V microcontroller GPIO?

No-its gate threshold voltage range (-2.1 V to -4 V) and R_DS(on) specification require V_GS ≤ -10 V for full enhancement. A dedicated level-shifting driver (e.g., TC4427 or discrete BJT stage) is necessary to generate sufficient negative gate voltage from 3.3 V logic.

Does ISP13DP06NMSATMA1 include an integrated ESD protection diode?

No-the device has no built-in ESD protection beyond standard MOSFET gate oxide robustness (HBM > 2 kV per JEDEC JESD22-A114). External TVS diodes (e.g., PTVS28VS1UR) are recommended on gate and drain lines in environments with >1 kV contact discharge risk.

Is the body diode suitable for continuous freewheeling in DC motor H-bridge applications?

Yes-the integrated body diode is rated for -1.5 A continuous forward current and -6 A pulsed current, with V_SD = -0.78 V at -1.5 A and t_rr = 33 ns. It supports efficient freewheeling in low-duty-cycle H-bridge brake modes but requires thermal consideration due to power dissipation in the die.

ISP13DP06NMSATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 2.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT223

ISP13DP06NMSATMA1 FAQ

1.How can I place an order for ISP13DP06NMSATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISP13DP06NMSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISP13DP06NMSATMA1 reliable?

The price and inventory of ISP13DP06NMSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISP13DP06NMSATMA1 is usually 5 days.

3.What payment methods are accepted for ISP13DP06NMSATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISP13DP06NMSATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISP13DP06NMSATMA1?

ISP13DP06NMSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISP13DP06NMSATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISP13DP06NMSATMA1?

For technical support, including ISP13DP06NMSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISP13DP06NMSATMA1 requirements.

6.How does Aetrix verify that ISP13DP06NMSATMA1 is sourced from the original manufacturer or authorized distributors?

All ISP13DP06NMSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISP13DP06NMSATMA1 meets industry standards.

7.What is the process for return or replacement of ISP13DP06NMSATMA1?

All ISP13DP06NMSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISP13DP06NMSATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISP13DP06NMSATMA1 part is unused and in its original packaging.

Return procedure for ISP13DP06NMSATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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