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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IST007N04NM6AUMA1

Name: IST007N04NM6AUMA1
Brand: Infineon Technologies
SKU: IST007N04NM6AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IST007N04NM6AUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 5-PowerSFN

Datasheet:: IST007N04NM6AUMA1.pdf

Description:: MOSFET N-CH 40V 54A/440A HSOF-5

Quantity:: RFQ Add To RFQ list

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Inventory:1,043

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Product details

Overview

IST007N04NM6AUMA1 from Infineon Technologies is an N-channel 40 V OptiMOSTM6 power MOSFET in sTOLL package, featuring 0.7 mΩ max R_DS(on), 440 A continuous drain current at T_C=25 °C, 100% avalanche tested, and 175 °C rated junction temperature-designed for high-current battery-powered motor drives and industrial DC-DC converters.

For engineers reviewing the IST007N04NM6AUMA1 datasheet, IST007N04NM6AUMA1 pinout, IST007N04NM6AUMA1 application, or IST007N04NM6AUMA1 equivalent, key selection criteria include low R_DS(on) at 6–10 V gate drive, Q_g = 114 nC, Q_oss = 122 nC, thermal resistance R_thJC = 0.6 °C/W, and sTOLL package compatibility with high-power board-level cooling.

Technical Context

This device implements a trench-gate, superjunction-enhanced silicon MOSFET architecture optimized for synchronous rectification and high-frequency switching in 12–48 V systems. Its low Q_gd/Q_g ratio (20/114 nC) supports fast, controllable turn-off with minimal Miller-induced oscillation.

The integrated body diode delivers 250 A continuous forward current and 61 ns reverse recovery time at 100 A/100 A/µs, enabling efficient freewheeling in half-bridge and H-bridge topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12–48 V battery and bus applications
R_DS(on), max	0.7 mΩ at V_GS = 10 V, I_D = 100 A - Enables <1 W conduction loss at 100 A
I_D, cont.	440 A at T_C = 25 °C - Supports high-current motor phase legs and OR-ing circuits
Q_g	114 nC - Determines gate driver power requirement and switching speed trade-off
Q_oss	122 nC - Directly impacts hard-switched turn-on loss in buck and LLC primary switches
R_thJC	0.6 °C/W - Enables >200 W dissipation with modest heatsink on PCB copper area
E_AS	400 mJ - Confirmed single-pulse avalanche ruggedness for inductive load interruption

Pinout & Package

sTOLL (Source-Tabbed Overmolded Leadless) package with exposed drain tab on bottom side, 6-pin configuration optimized for double-sided cooling and high-current PCB routing.

Pin/Terminal	Circuit Role	Design Meaning
Tab (bottom)	Drain	Primary high-current path; thermally coupled to PCB copper for heat extraction
Pin 5	Gate	Control input requiring low-inductance layout due to 114 nC charge demand
Pins 1–4	Source	Parallel-source terminals minimizing source inductance in high-di/dt switching

Key Features

Feature	Design Value
Optimized for low-voltage motor drives	Enables compact 48 V BLDC inverters with <0.5 mΩ effective on-resistance at 100 A
100% avalanche tested	Guarantees robustness against inductive kickback in relay drivers and solenoid controls
Superior thermal performance	R_thJC = 0.6 °C/W allows >250 W continuous operation with 6 cm² PCB copper
Internal body diode with 61 ns t_rr	Reduces need for external anti-parallel diodes in synchronous rectifier and bidirectional switch designs

Applications

Electric Power Steering (EPS)

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-reliability motor phase switching in automotive EPS modules under 125 °C ambient.

IC Role / Device Role / Timing Role: Main N-channel high-side and low-side switch in three-phase inverter bridge.

Use Value: 175 °C rating and 400 mJ E_AS ensure fault tolerance during sudden load dump or stall events.

Use Scenario: Primary-side synchronous rectifier in bi-directional 48 V/12 V DC-DC converter for mild hybrid vehicles.

IC Role / Device Role / Timing Role: Low-side switch operating at 200–500 kHz with zero-voltage switching assist.

Use Value: 0.7 mΩ R_DS(on) and 122 nC Q_oss minimize conduction + capacitive losses at high frequency.

Industrial Battery Energy Storage System (BESS)

High-Current OR-ing Circuit

Use Scenario: Cell-balancing and main contactor replacement in 48 V lithium-ion BESS racks.

IC Role / Device Role / Timing Role: Solid-state power switch replacing mechanical relays in battery disconnect units.

Use Value: 440 A continuous rating and 1760 A pulsed capability support surge currents during grid sync.

Use Scenario: Redundant power path management across dual 48 V server PSUs in data center rack PDUs.

IC Role / Device Role / Timing Role: Back-to-back configured N-MOSFET for bidirectional current blocking and low-loss forward conduction.

Use Value: Parallel-source pins (1–4) and low R_DS(on) reduce voltage drop and thermal imbalance in parallel configurations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFS7530PbF	R_DS(on) = 0.95 mΩ, Q_g = 135 nC, TO-263 package	Larger footprint, higher thermal resistance (R_thJC = 0.75 °C/W), no sTOLL thermal optimization	Prefer when legacy TO-263 layout exists and 0.25 mΩ R_DS(on) margin is acceptable
STL220N4F7AG	R_DS(on) = 0.47 mΩ, Q_g = 142 nC, LFPAK56 package	Lower R_DS(on) but higher Q_g; 150 °C T_j rating vs. 175 °C	Choose for ultra-low conduction loss where junction temperature stays ≤150 °C

Compared with IRFS7530PbF and STL220N4F7AG, IST007N04NM6AUMA1 offers the best balance of ultra-low R_DS(on), industry-leading thermal resistance, and extended 175 °C operation-critical for sealed, convection-limited motor drive enclosures.

Availability

IST007N04NM6AUMA1 is available at Aetrix Electronics and suitable for electric power steering (EPS), 48 V mild hybrid DC-DC converters, and industrial battery energy storage systems requiring stable component supply and long-term production continuity.

Supply support for IST007N04NM6AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOSTM6 product line-engineered specifically for high-efficiency, high-current switching in battery-powered traction and power conversion systems up to 48 V nominal.

FAQ

What is the maximum allowable case temperature for continuous operation?

The device is rated for continuous operation up to 175 °C junction temperature. At T_C = 100 °C, the maximum continuous drain current drops to 311 A per datasheet Table 2. Derating must follow Diagram 2, and thermal design must maintain T_J ≤ 175 °C under worst-case ambient and power dissipation conditions.

Does IST007N04NM6AUMA1 require a gate resistor for stability?

Yes-a gate resistor between 2.2 Ω and 10 Ω is recommended to dampen ringing caused by high di/dt and parasitic inductance. The datasheet's switching time test condition uses R_G,ext = 2.7 Ω, and layout inductance should be minimized to avoid unintended oscillation during 100 A transitions.

Can this MOSFET replace mechanical relays in battery disconnect applications?

Yes-its 1760 A pulsed drain current and 400 mJ avalanche energy enable reliable interruption of inductive battery loads. When used in back-to-back configuration with appropriate gate control, it eliminates contact wear and bounce while supporting hot-swap and fault-isolation functions in BESS and UPS systems.

Is the internal body diode suitable for synchronous rectification?

The body diode has 61 ns t_rr and 90 nC Q_rr at 100 A, making it usable for moderate-frequency synchronous rectification (≤200 kHz). However, for optimal efficiency above 300 kHz, external Schottky or GaN FETs are preferred due to lower Q_rr and V_SD drift over temperature.

IST007N04NM6AUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 6

Package/Case:: 5-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 54A (Ta), 440A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 0.7mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 152 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7900 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-5-4

IST007N04NM6AUMA1 FAQ

1.How can I place an order for IST007N04NM6AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IST007N04NM6AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IST007N04NM6AUMA1 reliable?

The price and inventory of IST007N04NM6AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IST007N04NM6AUMA1 is usually 5 days.

3.What payment methods are accepted for IST007N04NM6AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IST007N04NM6AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IST007N04NM6AUMA1?

IST007N04NM6AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IST007N04NM6AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IST007N04NM6AUMA1?

For technical support, including IST007N04NM6AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IST007N04NM6AUMA1 requirements.

6.How does Aetrix verify that IST007N04NM6AUMA1 is sourced from the original manufacturer or authorized distributors?

All IST007N04NM6AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IST007N04NM6AUMA1 meets industry standards.

7.What is the process for return or replacement of IST007N04NM6AUMA1?

All IST007N04NM6AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IST007N04NM6AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IST007N04NM6AUMA1 part is unused and in its original packaging.

Return procedure for IST007N04NM6AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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