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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IST015N06NM5AUMA1

Name: IST015N06NM5AUMA1
Brand: Infineon Technologies
SKU: IST015N06NM5AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IST015N06NM5AUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 5-PowerSFN

Datasheet:: IST015N06NM5AUMA1.pdf

Description:: OPTIMOS 5 POWER MOSFET 60 V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IST015N06NM5AUMA1 from Infineon Technologies is an N-channel 60 V, 1.5 mΩ R_DS(on) OptiMOS™ 5 power MOSFET in sTOLL package, rated for 242 A continuous drain current at T_C = 25 °C and 175 °C junction temperature. It features 81 nC output charge, 71 nC total gate charge, and integrated body diode with 101.1 nC reverse recovery charge-optimized for high-efficiency synchronous rectification in low-voltage motor drives and battery-powered systems.

For engineers reviewing the IST015N06NM5AUMA1 datasheet, IST015N06NM5AUMA1 pinout, IST015N06NM5AUMA1 application, or IST015N06NM5AUMA1 equivalent, key selection criteria include its ultra-low R_DS(on), 100% avalanche-tested ruggedness, sTOLL thermal performance (R_thJC = 0.45 °C/W), RoHS-compliant Pb-free plating, and suitability for automated optical solder inspection in high-volume power stages.

Technical Context

This device implements a trench-gate, superjunction-enhanced planar MOSFET architecture optimized for low conduction and switching losses in 48 V and below DC bus systems. Its gate plateau voltage of 4.3 V and transconductance of 70–140 S enable stable turn-on under varying gate drive conditions while maintaining fast switching (t_r = 63.6 ns, t_f = 17.7 ns) with controlled EMI via 48 pF reverse transfer capacitance.

The integrated body diode supports synchronous FET operation with 0.84–1.2 V forward voltage at 50 A and 65.4 ns reverse recovery time-critical for ZVS/ZCS topologies. Thermal design leverages the sTOLL package's exposed drain tab for direct heatsinking, achieving 167 W power dissipation at T_C = 25 °C and 3.8 W at T_A = 25 °C with 40 °C/W ambient thermal resistance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 48 V nominal bus systems with 20 % margin
R_DS(on), max	1.5 mΩ - Enables ≤36 W conduction loss at 242 A, critical for high-current motor phases
I_D, cont	242 A @ T_C = 25 °C - Supports peak-phase currents in industrial BLDC inverters without derating
Q_g	71 nC - Determines gate driver current requirement (~1.4 A avg. for 50 ns turn-on)
Q_oss	81 nC - Sets hard-switching energy loss (E = ½ × Q_oss × V_DS) in buck/boost converters
T_j max	175 °C - Allows operation in sealed enclosures or high-ambient environments without thermal shutdown
E_AS	380 mJ - Withstands single-pulse inductive energy during fault events in motor control

Pinout & Package

The IST015N06NM5AUMA1 uses the sTOLL (Source-Tab-Over-Large-Lead) package: a 5-pin surface-mount outline with thermally enhanced exposed drain tab on bottom and source terminals on top side. The package enables >90 % of heat to be conducted through the drain tab to PCB copper, reducing junction-to-case thermal resistance to 0.45 °C/W.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main power drain connection	Exposed metal pad-must be soldered to large copper pour for thermal management and current return path
Pin 5 (Gate)	Control input	High-impedance MOSFET gate requiring <20 V rating; layout must minimize inductance to suppress ringing
Pins 1–4 (Source)	Power source and reference node	Four parallel source pins reduce bond wire inductance and improve current sharing in high-di/dt applications

Key Features

Feature	Design Value
Optimized for low-voltage motor drives	Enables <1.5 mΩ R_DS(on) at 10 V gate drive-reducing I²R losses in 24–48 V BLDC inverter half-bridges
100 % avalanche tested	Guarantees robustness against inductive kickback in H-bridge freewheeling without external snubbers
Enables automated optical solder inspection (AOSI)	sTOLL's symmetric top-side terminal layout and defined solder mask openings support reliable AOI pass rates in SMT lines
175 °C rated junction temperature	Supports operation in sealed IP67 enclosures or near heat sources without derating in automotive body control modules
Pb-free lead plating, RoHS compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1) and reflow compatibility up to 260 °C peak

Applications

Brushless DC Motor Inverters

Server VRMs / POL Converters

Use Scenario: High-power 48 V BLDC inverters for industrial automation actuators with 200+ A phase current.

IC Role / Device Role / Timing Role: Low-side and high-side switching element in three-phase inverter leg, operating at 20–50 kHz PWM frequency.

Use Value: 1.5 mΩ R_DS(on) reduces conduction loss by >40 % vs. legacy 3.2 mΩ devices, enabling 98.2 % efficiency at full load.

Use Scenario: Multiphase buck converter delivering 50–100 A at 0.8–1.2 V to AI accelerator GPUs.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in each phase, driven by dedicated gate controller with adaptive dead-time.

Use Value: 81 nC Q_oss and 101.1 nC Q_rr minimize switching loss during light-load discontinuous conduction mode (DCM).

Battery Management Systems (BMS)

Electric Power Steering (EPS)

Use Scenario: Bidirectional 48 V battery disconnect and cell balancing switches in EV traction battery packs.

IC Role / Device Role / Timing Role: Main contactor replacement switch handling 200+ A continuous current with fast fault isolation.

Use Value: 380 mJ E_AS withstands short-circuit energy during pack-level overcurrent events without destruction.

Use Scenario: Torque assist in 48 V EPS systems requiring compact, high-reliability motor drivers.

IC Role / Device Role / Timing Role: Half-bridge power stage switch operating at 10–20 kHz with strict ASIL-B functional safety requirements.

Use Value: 175 °C rating and JEDEC industrial qualification ensure reliability across -40 to 150 °C ambient vehicle environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB017N06N3 G	R_DS(on) = 1.7 mΩ (higher), Q_g = 65 nC (lower), same sTOLL package	Slightly lower switching loss but higher conduction loss at >150 A; less suitable for high-current motor phases	Select when gate drive capability is limited and average current stays below 180 A.
STL220N6F7	R_DS(on) = 1.4 mΩ (lower), Q_g = 92 nC (higher), same 5-pin TOLL package	Lower conduction loss but requires stronger gate driver; not qualified to JEDEC industrial standard	Select only if thermal margin allows higher gate drive power and qualification scope permits non-JEDEC parts.

Compared with IPB017N06N3 G and STL220N6F7, IST015N06NM5AUMA1 delivers optimal balance of ultra-low R_DS(on), moderate Q_g, JEDEC industrial qualification, and proven avalanche ruggedness-making it preferred for mission-critical 200+ A motor drive and BMS applications where both efficiency and reliability are non-negotiable.

Availability

IST015N06NM5AUMA1 is available at Aetrix Electronics and suitable for brushless DC motor inverters, server point-of-load (POL) converters, battery management systems (BMS), and electric power steering (EPS) requiring stable component supply across extended production lifecycles.

Supply support for IST015N06NM5AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™ 5 product line-designed specifically for high-current, low-voltage power conversion in motor drives, server VRMs, and battery systems where R_DS(on) and thermal performance dominate system efficiency.

FAQ

What is the maximum allowable gate-source voltage for IST015N06NM5AUMA1?

The absolute maximum gate-source voltage is ±20 V, per Table 2 of the Rev. 2.0 datasheet. Operation above +12 V or below −5 V is not recommended for long-term reliability. Gate drive circuits must clamp V_GS within this range using Zener diodes or active clamping to prevent oxide damage during transient events.

Does IST015N06NM5AUMA1 require a gate resistor, and what value is recommended?

Yes-a series gate resistor is required to dampen ringing and limit peak gate current. For 10 V gate drive and typical 50 ns switching targets, a 1.6 Ω external resistor matches the device's intrinsic gate resistance (R_G = 1.6 Ω) and achieves measured t_r = 63.6 ns and t_f = 17.7 ns per Table 5.

Can IST015N06NM5AUMA1 be used in paralleled configurations?

Yes-the device's positive temperature coefficient of R_DS(on) (shown in Diagram 9) ensures inherent current sharing when paralleled. Layout must match source inductance across all devices and use Kelvin source connections to avoid imbalance; thermal coupling via shared heatsink improves matching.

Is the internal body diode suitable for synchronous rectification in continuous conduction mode (CCM)?

Yes-the diode is fully characterized with 101.1 nC Q_rr and 65.4 ns t_rr at 50 A, enabling soft switching in CCM buck converters. However, its 0.84–1.2 V V_SD means synchronous FET conduction must be timed precisely to avoid cross-conduction losses during dead-time intervals.

IST015N06NM5AUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 5-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Ta), 242A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 3.3V @ 95µA

Gate Charge (Qg) (Max) @ Vgs:: 89 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5200 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-5-1

IST015N06NM5AUMA1 FAQ

1.How can I place an order for IST015N06NM5AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IST015N06NM5AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IST015N06NM5AUMA1 reliable?

The price and inventory of IST015N06NM5AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IST015N06NM5AUMA1 is usually 5 days.

3.What payment methods are accepted for IST015N06NM5AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IST015N06NM5AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IST015N06NM5AUMA1?

IST015N06NM5AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IST015N06NM5AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IST015N06NM5AUMA1?

For technical support, including IST015N06NM5AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IST015N06NM5AUMA1 requirements.

6.How does Aetrix verify that IST015N06NM5AUMA1 is sourced from the original manufacturer or authorized distributors?

All IST015N06NM5AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IST015N06NM5AUMA1 meets industry standards.

7.What is the process for return or replacement of IST015N06NM5AUMA1?

All IST015N06NM5AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IST015N06NM5AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IST015N06NM5AUMA1 part is unused and in its original packaging.

Return procedure for IST015N06NM5AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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