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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISZ040N03L5ISATMA1

Name: ISZ040N03L5ISATMA1
Brand: Infineon Technologies
SKU: ISZ040N03L5ISATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISZ040N03L5ISATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: ISZ040N03L5ISATMA1.pdf

Description:: MOSFET N-CH 30V 18A/40A TSDSON

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Product details

Overview

ISZ040N03L5IS from Infineon Technologies is an N-channel OptiMOSTM Power-MOSFET rated for 30 V drain-source voltage, 4.0 mΩ maximum R_DS(on) at V_GS = 4.5 V, and 40 A continuous drain current at T_C = 25 °C. It integrates a monolithic Schottky-like body diode and is optimized as a synchronous rectifier (SyncFET) in high-efficiency buck converters for server VRMs and POL modules.

For engineers reviewing the ISZ040N03L5IS datasheet, ISZ040N03L5IS pinout, ISZ040N03L5IS application, or ISZ040N03L5IS equivalent, key selection criteria include its low 4.0 mΩ on-resistance at 4.5 V gate drive, 12 nC output charge (Q_OSS), 17 nC total gate charge (Q_G at 0–10 V), 3.4 K/W junction-to-case thermal resistance, and TSDSON-8 FL package with exposed drain pad for enhanced thermal performance.

Technical Context

This MOSFET employs Infineon's OptiMOSTM process to achieve ultra-low R_DS(on) while maintaining robust switching behavior: Q_g = 17 nC (0–10 V), Q_gd = 2.9 nC, and t_d(off) = 16 ns under standard 15 V/30 A test conditions. Its integrated Schottky-like diode delivers V_SD = 0.56 V (typ.) at I_F = 3 A and T_j = 25 °C, enabling efficient synchronous rectification without external diode replacement.

The device is qualified per JEDEC standards and supports operation from –55 °C to +150 °C. Thermal design leverages dual thermal paths: 3.4 K/W (junction-to-case, bottom) and 20 K/W (junction-to-case, top), with R_thJA = 60 K/W on a 40 mm × 40 mm FR4 PCB with 6 cm² copper area - critical for high-power density DC-DC designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input bus and 12 V output buck stages
R_DS(on), max	4.0 mΩ @ V_GS = 4.5 V - Enables <1.8 W conduction loss at 30 A, supporting high-current POL rails
I_D, cont	40 A @ T_C = 25 °C - Sustains full-load current in compact VRM phases without forced airflow
Q_OSS	12 nC - Low output charge reduces turn-off energy and improves light-load efficiency in sync-buck topologies
Q_G (0–10 V)	17 nC - Matches common gate drivers (e.g., IR352xx, MP296x) for clean 1–2 MHz switching
R_thJC (bottom)	3.4 K/W - Enables direct thermal coupling to heatsink or PCB copper, limiting ΔT_j-c to ≤102 °C at 37 W dissipation
V_SD (diode)	0.56 V (typ.) @ I_F = 3 A - Reduces reverse conduction loss vs. discrete Schottky in high-frequency CCM operation

Pinout & Package

Package: TSDSON-8 FL (Thin Small Outline No-Lead, Flat Lead), 3.3 mm × 3.3 mm footprint, 0.55 mm height, thermally enhanced with exposed drain pad on bottom side.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 8 (Drain)	Power Drain Connection	Internally connected to exposed copper pad; primary thermal and current path to PCB ground plane
4 (Gate)	Control Input	High-impedance MOS gate requiring <1.6 Ω external series resistor to damp ringing at >1 MHz
5, 6, 7 (Source)	Power Source Return	Three dedicated source pins minimize source inductance and improve current sharing in parallel layouts
Exposed Pad	Drain Terminal / Thermal Path	Must be soldered to ≥6 cm² copper pour for rated power dissipation; not electrically isolated

Key Features

Feature	Design Value
Optimized SyncFET architecture	Enables zero-voltage switching (ZVS) in synchronous buck converters by minimizing Q_gd/Q_g ratio (0.17) and tailoring threshold voltage (1.2–2.0 V)
Integrated Schottky-like body diode	Reduces reverse recovery charge Q_rr to 2 nC and forward drop to 0.56 V, eliminating need for external Schottky in most 500 kHz–2 MHz designs
Low R_DS(on) at 4.5 V drive	Supports 3.3 V and 5 V logic-level gate drivers without level-shifting, simplifying controller interface in multi-phase VRMs
Pb-free & halogen-free construction	Complies with RoHS Directive 2011/65/EU and IEC61249-2-21, suitable for automotive and industrial applications requiring strict material compliance

Applications

Server Voltage Regulator Modules (VRMs)

Point-of-Load (POL) Converters

Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) from 12 V input bus.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier (SyncFET) operating in continuous conduction mode (CCM) at 500 kHz–1.5 MHz.

Use Value: 4.0 mΩ R_DS(on) and 12 nC Q_OSS reduce conduction and switching losses, enabling >95% efficiency at 30 A per phase with minimal thermal margin.

Use Scenario: Compact 6–12 A DC-DC module powering FPGA I/O banks or ASIC auxiliary rails in telecom base stations.

IC Role / Device Role / Timing Role: Primary power switch in single-phase buck topology with integrated controller (e.g., TPS536xx).

Use Value: TSDSON-8 FL package allows 3.3 mm × 3.3 mm layout footprint; 3.4 K/W R_thJC enables natural convection cooling without heatsink.

Industrial Motor Drive Gate Drivers

Automotive ADAS Power Supplies

Use Scenario: Half-bridge high-side/low-side driver stage for BLDC motor control in HVAC blowers or servo amplifiers.

IC Role / Device Role / Timing Role: Low-side switch in 24 V system with fast turn-off (t_f = 3.0 ns) and avalanche-rated 20 mJ E_AS.

Use Value: 20 A single-pulse avalanche current rating and 20 mJ E_AS ensure robustness against inductive kickback during PWM dead-time transitions.

Use Scenario: 5 V/3 A auxiliary supply for radar sensor modules or camera ECUs in 12 V vehicle electrical systems.

IC Role / Device Role / Timing Role: Main switch in compact buck converter meeting AEC-Q101 stress requirements and -40 °C to +125 °C ambient operation.

Use Value: Qualified per JEDEC standards and rated for T_j up to +150 °C; V_GS(th) stability over temperature (1.2–2.0 V) ensures reliable turn-on across automotive thermal range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BSC010N04LS	R_DS(on) = 1.0 mΩ @ 10 V (lower), Q_G = 22 nC (higher), TSDSON-8 but no integrated Schottky diode	Requires external Schottky for sync-rectification; better for high-frequency, low-loss high-side use	Select when lowest possible conduction loss dominates and external diode integration is acceptable
IRFH7107TRPBF	R_DS(on) = 4.5 mΩ @ 4.5 V (slightly higher), Q_OSS = 15 nC (higher), PQFN 5×6 mm package with higher R_thJA (70 K/W)	Larger footprint and inferior thermal performance limit usable current density in space-constrained POLs	Prefer only if legacy board layout requires 5×6 mm PQFN or existing qualification of IR part family

Compared with BSC010N04LS and IRFH7107TRPBF, ISZ040N03L5IS uniquely balances low 4.0 mΩ on-resistance at 4.5 V, integrated Schottky-like diode, and 3.4 K/W thermal resistance in a 3.3 mm × 3.3 mm footprint - making it optimal for high-density, high-efficiency synchronous buck converters where gate drive voltage is constrained to 3.3–5 V.

Availability

ISZ040N03L5IS is available at Aetrix Electronics and suitable for server VRMs, point-of-load converters, industrial motor drive gate drivers, and automotive ADAS power supplies requiring stable component supply and long-term production continuity.

Supply support for ISZ040N03L5IS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to the OptiMOSTM 30 V Power-MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in data center, industrial, and automotive power systems where low R_DS(on), fast switching, and thermal reliability are critical.

FAQ

What is the maximum safe operating temperature for ISZ040N03L5IS?

The device is rated for junction temperature (T_j) from –55 °C to +150 °C. Continuous operation at T_j = 150 °C requires thermal design ensuring power dissipation stays within derated limits - e.g., ≤2.1 W at T_A = 25 °C with R_thJA = 60 K/W, or ≤37 W at T_C = 25 °C using the case temperature path.

Does ISZ040N03L5IS require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and suppress oscillation. For 1–2 MHz operation with typical gate drivers (e.g., UCC27531), a 1.6 Ω series resistor is validated per datasheet test conditions; values between 1.0 Ω and 3.3 Ω balance switching speed and EMI in most buck applications.

Can ISZ040N03L5IS be used as a high-side switch in a buck converter?

No - it is optimized as a low-side synchronous rectifier (SyncFET). Its gate threshold voltage (1.2–2.0 V) and body diode characteristics make it unsuitable for high-side floating-drive configurations without complex bootstrap or isolated gate drive; use dedicated high-side MOSFETs like IPB180N04S4-H0 for that role.

How does the integrated Schottky-like diode differ from a standard body diode?

It exhibits lower forward voltage (V_SD = 0.56 V typ. at 3 A) and negligible reverse recovery charge (Q_rr = 2 nC), unlike conventional MOSFET body diodes which suffer from high Q_rr and slow recovery. This enables efficient synchronous rectification without external diode replacement in CCM buck topologies.

ISZ040N03L5ISATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 37W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSDSON-8-FL

ISZ040N03L5ISATMA1 FAQ

1.How can I place an order for ISZ040N03L5ISATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISZ040N03L5ISATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISZ040N03L5ISATMA1 reliable?

The price and inventory of ISZ040N03L5ISATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISZ040N03L5ISATMA1 is usually 5 days.

3.What payment methods are accepted for ISZ040N03L5ISATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISZ040N03L5ISATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISZ040N03L5ISATMA1?

ISZ040N03L5ISATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISZ040N03L5ISATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISZ040N03L5ISATMA1?

For technical support, including ISZ040N03L5ISATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISZ040N03L5ISATMA1 requirements.

6.How does Aetrix verify that ISZ040N03L5ISATMA1 is sourced from the original manufacturer or authorized distributors?

All ISZ040N03L5ISATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISZ040N03L5ISATMA1 meets industry standards.

7.What is the process for return or replacement of ISZ040N03L5ISATMA1?

All ISZ040N03L5ISATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISZ040N03L5ISATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISZ040N03L5ISATMA1 part is unused and in its original packaging.

Return procedure for ISZ040N03L5ISATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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