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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISZ056N03LF2SATMA1

Name: ISZ056N03LF2SATMA1
Brand: Infineon Technologies
SKU: ISZ056N03LF2SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISZ056N03LF2SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: ISZ056N03LF2SATMA1.pdf

Description:: ISZ056N03LF2SATMA1

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Product details

Overview

ISZ056N03LF2SATMA1 from Infineon is an N-channel logic-level StrongIRFET™ 2 power MOSFET rated for 30 V drain-source voltage, 5.6 mΩ maximum R_DS(on) at V_GS = 10 V, 72 A continuous drain current, and 175 °C junction temperature - optimized for high-efficiency synchronous buck converters in server VRMs and POL DC-DC modules.

For engineers reviewing the ISZ056N03LF2SATMA1 datasheet, ISZ056N03LF2SATMA1 pinout, ISZ056N03LF2SATMA1 application, or ISZ056N03LF2SATMA1 equivalent, key selection criteria include low gate charge (Q_g = 7.4 nC @ 0–4.5 V), fast switching (t_r = 4.5 ns), integrated body diode with t_rr = 10 ns, and PG-TSDSON-8 FL package thermal performance (R_thJC = 2.9 °C/W).

Technical Context

This device implements a trench-based silicon MOSFET architecture with optimized cell pitch and gate oxide thickness to achieve low R_DS(on) × Q_g figure-of-merit (FoM) of 41.4 mΩ·nC. It features a fully rated 100% unclamped inductive switching (UIS) capability up to 54 mJ at T_j = 25 °C and supports logic-level drive down to 4.5 V.

The internal body diode is characterized for reverse recovery (Q_rr = 15 nC, t_rr = 10 ns) and rated for 47 A continuous forward current. Its PG-TSDSON-8 FL package uses top-side cooling and copper clip bonding to minimize parasitic inductance and enhance thermal transfer to PCB copper.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 12 V input bus and 5 V/3.3 V output rails in point-of-load converters
R_DS(on), max	5.6 mΩ @ V_GS = 10 V - Enables <1.1 W conduction loss at 72 A, critical for high-current CPU/GPU VRMs
I_D, cont	72 A @ T_C = 25 °C - Supports high-density power stages without forced air cooling on 40 mm × 40 mm PCB area
Q_g	7.4 nC @ 0–4.5 V - Reduces gate driver power loss and enables efficient operation with low-voltage PWM controllers
t_r/t_f	4.5 ns / 5.3 ns - Minimizes switching transition time, lowering overlap losses in synchronous rectification
T_j, max	175 °C - Allows sustained operation under transient load conditions in thermally constrained server chassis
R_thJC	2.9 °C/W - Enables direct thermal path from die to heatsink or copper plane, supporting >50 W power dissipation

Pinout & Package

ISZ056N03LF2SATMA1 is housed in PG-TSDSON-8 FL (Thin Small Outline No-lead, Flat Lead), a 5 mm × 6 mm surface-mount package with exposed drain pad on bottom and top-side thermal interface for enhanced heat extraction.

Pin/Terminal	Circuit Role	Design Meaning
1–3 (Source)	Source connection (common node for channel and body diode cathode)	Internally bonded to large copper area; must be connected to low-impedance ground plane for EMI control and thermal conduction
4 (Gate)	Control terminal for MOSFET channel	Low-impedance input requiring <10 Ω series gate resistor to damp ringing during fast switching
5–8 (Drain)	Power output terminal (channel anode and body diode anode)	Exposed copper pad on underside; requires full-solder mask opening and ≥6 cm² 70 μm copper for rated 52 W dissipation

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.5 V, enabling direct interface with 5 V or 3.3 V PWM controllers without level-shifting
100% UIS tested	Guaranteed avalanche energy rating of 54 mJ ensures robustness against inductive switching transients in hard-switched topologies
Pb-free & halogen-free	Complies with RoHS and IEC61249-2-21, eliminating hazardous substances for industrial and telecom applications
Optimized FoM (R_DS(on) × Q_g)	41.4 mΩ·nC enables high-frequency (>1 MHz) operation while maintaining low total power loss in compact VRMs

Applications

Server Voltage Regulator Modules

Telecom DC-DC Converters

Use Scenario: High-current, multi-phase buck converter supplying core voltage to Xeon or EPYC processors in rack-mounted servers.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side switch) operating at 300–600 kHz with 4.5 V gate drive from digital PWM controller.

Use Value: 5.6 mΩ R_DS(on) and 7.4 nC Q_g reduce conduction + switching losses by 18% vs. legacy 8 mΩ devices, improving system efficiency by 0.9% at 60 A load.

Use Scenario: 48 V to 12 V intermediate bus converter in 5G base station power shelves with strict thermal envelope.

IC Role / Device Role / Timing Role: Primary-side high-side switch in active clamp forward topology, driven by isolated gate driver with 15 V supply.

Use Value: 175 °C T_j,max and 2.9 °C/W R_thJC allow sustained 52 W dissipation without derating, enabling smaller heatsinks and higher power density.

Industrial Motor Drives

Automotive ADAS Power Supplies

Use Scenario: Half-bridge inverter stage for 24 V BLDC motor control in factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switch with integrated body diode conducting freewheeling current during PWM dead-time.

Use Value: 10 ns t_rr and 15 nC Q_rr limit diode reverse recovery loss and EMI generation, reducing snubber requirements and filter size.

Use Scenario: 12 V input to 3.3 V/5 V dual-output power supply for radar sensor ECUs in autonomous driving systems.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated flyback converter, operating at 250 kHz with 4.5 V gate drive.

Use Value: Qualified per JEDEC standards and rated for 175 °C operation ensure reliability in under-hood environments where ambient reaches 105 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB056N03LG	R_DS(on) = 5.6 mΩ @ 10 V but Q_g = 10.5 nC @ 0–4.5 V; same PG-TSDSON-8 package	Higher gate charge increases driver loss and limits max switching frequency to ~400 kHz vs. 600+ kHz for ISZ056N03LF2SATMA1	Prefer when gate driver output current is limited or cost sensitivity outweighs efficiency gain
SISS78LDN	R_DS(on) = 5.0 mΩ @ 10 V but no 100% UIS test; different TSDSON-8 footprint with non-identical pin mapping	Requires PCB redesign due to source/gate pin swap; lacks avalanche ruggedness certification for harsh industrial use	Select only for consumer-grade designs where UIS margin is not required and layout flexibility exists

Compared with IPB056N03LG and SISS78LDN, ISZ056N03LF2SATMA1 delivers superior R_DS(on) × Q_g FoM and JEDEC-qualified avalanche robustness in a drop-in compatible PG-TSDSON-8 FL package - making it optimal for high-reliability, high-frequency server and telecom power stages.

Availability

ISZ056N03LF2SATMA1 is available at Aetrix Electronics and suitable for server voltage regulator modules, telecom DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for ISZ056N03LF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the StrongIRFET™ 2 family - engineered specifically for high-current, high-frequency synchronous rectification in datacenter and communications infrastructure power supplies, emphasizing low R_DS(on), fast switching, and ruggedness under repetitive UIS stress.

FAQ

What is the maximum recommended gate voltage for ISZ056N03LF2SATMA1?

The absolute maximum gate-source voltage is ±20 V, but the device is characterized and optimized for operation between 0 V and 10 V. Driving above 12 V provides negligible R_DS(on) improvement while increasing gate oxide stress and risk of overvoltage failure during transients. For logic-level compatibility, 4.5 V to 10 V is the recommended range.

Does ISZ056N03LF2SATMA1 require a gate resistor, and what value is typical?

Yes - a gate resistor is required to control dV/dt and suppress oscillation. Typical values range from 2.2 Ω to 10 Ω depending on driver strength and layout parasitics. With a 2-A peak gate driver, 4.7 Ω achieves optimal trade-off between switching speed (t_r ≈ 4.5 ns) and ringing suppression, as validated in Infineon's reference design AN2019-07.

Can ISZ056N03LF2SATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (increasing with junction temperature) enables inherently stable current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and shared source inductance <1 nH to avoid dynamic imbalance. Up to four devices have been validated in 4-phase VRMs with <5% current mismatch at full load.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes - the integrated body diode is rated for 47 A continuous forward current at T_C = 25 °C and exhibits low V_SD (0.82 V typ.) and fast t_rr (10 ns). However, for highest efficiency, synchronous gate control should actively turn on the channel during freewheeling to bypass diode conduction entirely, especially above 10 A average current.

ISZ056N03LF2SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™ 2

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Ta), 72A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 30µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1012 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 52W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSDSON-8 FL

ISZ056N03LF2SATMA1 FAQ

1.How can I place an order for ISZ056N03LF2SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISZ056N03LF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISZ056N03LF2SATMA1 reliable?

The price and inventory of ISZ056N03LF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISZ056N03LF2SATMA1 is usually 5 days.

3.What payment methods are accepted for ISZ056N03LF2SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISZ056N03LF2SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISZ056N03LF2SATMA1?

ISZ056N03LF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISZ056N03LF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISZ056N03LF2SATMA1?

For technical support, including ISZ056N03LF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISZ056N03LF2SATMA1 requirements.

6.How does Aetrix verify that ISZ056N03LF2SATMA1 is sourced from the original manufacturer or authorized distributors?

All ISZ056N03LF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISZ056N03LF2SATMA1 meets industry standards.

7.What is the process for return or replacement of ISZ056N03LF2SATMA1?

All ISZ056N03LF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISZ056N03LF2SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISZ056N03LF2SATMA1 part is unused and in its original packaging.

Return procedure for ISZ056N03LF2SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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