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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISZ065N03L5SATMA1

Name: ISZ065N03L5SATMA1
Brand: Infineon Technologies
SKU: ISZ065N03L5SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISZ065N03L5SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: ISZ065N03L5SATMA1.pdf

Description:: MOSFET N-CH 30V 12A/40A TSDSON

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Product details

Overview

ISZ065N03L5SATMA1 from Infineon Technologies is an N-channel enhancement-mode Power-MOSFET optimized for high-frequency synchronous buck converters in server and GPU power delivery. It delivers R_DS(on) = 6.5 mΩ @ V_GS = 10 V, 8.6 mΩ @ V_GS = 4.5 V, 40 A continuous drain current (T_C = 25 °C), and ultra-low gate charge (Q_g = 10 nC @ 0–10 V) for efficient switching in 30 V systems.

For engineers reviewing the ISZ065N03L5SATMA1 datasheet, ISZ065N03L5SATMA1 pinout, ISZ065N03L5SATMA1 application, or ISZ065N03L5SATMA1 equivalent, key selection criteria include its low FOM_QOSS and FOM_SW, thermal resistance (R_thJC = 4.9 K/W), TSDSON-8 FL package footprint, and validated performance in high-density VRM designs.

Technical Context

This OptiMOSTM device employs trench-gate superjunction technology to achieve superior conduction and switching trade-offs at 30 V. Its gate threshold voltage (V_GS(th) = 1.2–2.0 V) enables robust 4.5 V logic-level drive compatibility while maintaining tight control over turn-on dynamics.

The MOSFET integrates a low-loss body diode with Q_rr = 10 nC and V_SD = 0.89 V @ 20 A, supporting efficient synchronous rectification and hard-switched topologies. Its SOA is characterized up to DC at T_C = 25 °C with defined pulse width limits and thermal transient impedance profiles.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V/24 V input bus applications with margin against transients.
R_DS(on) max @ V_GS = 10 V	6.5 mΩ - Enables <1.5 W conduction loss at 40 A in high-current CPU/GPU VRMs.
R_DS(on) max @ V_GS = 4.5 V	8.6 mΩ - Ensures stable on-resistance under typical 5 V controller gate drive conditions.
Q_g total	10 nC @ 0–10 V - Reduces gate driver power demand and supports >1 MHz switching in compact SMPS.
I_D continuous	40 A @ T_C = 25 °C - Sustains full-load operation in single-phase VRMs with adequate heatsinking.
R_thJC	4.9 K/W - Enables direct thermal coupling to PCB copper or heatsink for high-power density layouts.
Q_rr	10 nC - Minimizes reverse recovery loss and EMI in synchronous buck and LLC secondary-side designs.

Pinout & Package

TSDSON-8 FL (Thin Small Outline No-Lead, Flat Lead) package with exposed drain pad for optimal thermal and electrical performance. 5 mm × 6 mm footprint, 0.5 mm pitch, JEDEC-compliant wettable flank terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 7, 8 (Drain)	Power Drain Connection	Internally connected to exposed copper pad; primary current path and thermal interface to PCB.
4 (Gate)	Control Input	High-impedance MOS gate requiring low-inductance routing to minimize ringing during fast switching.
5, 6 (Source)	Power Source Reference	Low-inductance return path for load current; critical for gate drive loop integrity and noise immunity.

Key Features

Feature	Design Value
Optimized FOM_QOSS	Enables high-efficiency operation in 500 kHz–2 MHz buck converters by minimizing output capacitance-related losses.
Low R_DS(on) × Q_g product	Reduces total switching + conduction loss, directly improving VRM efficiency at light-to-heavy loads.
Superior thermal resistance (R_thJC)	Supports higher power density without forced air cooling-validated for 40 A continuous operation on 6 cm² PCB copper.
Robust body diode with low Q_rr	Permits reliable synchronous rectification in high-dV/dt environments without external Schottky clamp.

Applications

Server VRM Phase

GPU Power Stage

Use Scenario: Primary high-side switch in multiphase buck converters delivering 0.8–1.2 V @ up to 300 A to modern Xeon or EPYC CPUs.

IC Role / Device Role / Timing Role: High-frequency (up to 1.5 MHz) power switch with precise duty-cycle control and minimal dead-time loss.

Use Value: Low R_DS(on) and Q_g reduce phase loss by >15% vs. legacy 30 V MOSFETs, enabling tighter thermal margins.

Use Scenario: Dual-stage power delivery for discrete GPUs, including memory rail (1.35 V) and core rail (0.9 V).

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side buck stages operating at 1 MHz with tight regulation.

Use Value: Low V_SD and Q_rr cut diode conduction loss by ~30% versus standard MOSFETs, improving overall rail efficiency.

Industrial DC-DC Module

Telecom POL Converter

Use Scenario: Compact 24 V–12 V intermediate bus converter in programmable logic controllers and motor drives.

IC Role / Device Role / Timing Role: Main switch in isolated or non-isolated buck-derived topologies with 400 kHz–1 MHz operation.

Use Value: TSDSON-8 FL package allows dense layout with minimal thermal vias, reducing board area by ≥20% vs. SO-8 equivalents.

Use Scenario: Point-of-load regulator supplying FPGA I/O banks (1.8 V, 2.5 V) in 5G baseband units.

IC Role / Device Role / Timing Role: Low-voltage, high-current switch in tightly regulated, fast-transient-response buck regulators.

Use Value: Stable V_GS(th) over temperature ensures consistent turn-on timing across -40 °C to +125 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V Power-MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 7.0 mΩ @ 4.5 V; Q_g = 12.5 nC; SO-8 package; R_thJA = 62 K/W (vs. 60 K/W)	Higher gate charge increases driver loss; larger SO-8 footprint reduces power density.	Preferred where legacy SO-8 layout reuse is required and thermal budget permits.
BSC014N04LS6	R_DS(on) = 1.4 mΩ @ 10 V; 40 V rating; PG-TDSON-8; Q_g = 21 nC; higher voltage grade adds cost and capacitance.	Over-specified voltage rating increases C_iss and switching loss in 30 V systems.	Only suitable if future 40 V system migration or enhanced surge margin is explicitly required.

Compared with IRLHS6342TRPBF and BSC014N04LS6, ISZ065N03L5SATMA1 offers the best balance of low R_DS(on), minimal Q_g, and thermally optimized TSDSON-8 FL packaging-making it the most efficient choice for space-constrained, high-frequency 30 V buck converters.

Availability

ISZ065N03L5SATMA1 is available at Aetrix Electronics and suitable for server VRMs, GPU power stages, and industrial DC-DC modules requiring stable component supply, high-reliability qualification, and RoHS/halogen-free compliance.

Supply support for ISZ065N03L5SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101 standards.

This part belongs to the OptiMOSTM 30 V Power-MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in datacenter, computing, and telecom infrastructure where thermal density and switching loss are critical constraints.

FAQ

What is the maximum junction temperature rating for ISZ065N03L5SATMA1?

The device is rated for continuous operation from T_j = –55 °C to +150 °C per JEDEC JESD22-A108. The absolute maximum T_j is 150 °C, and thermal design must ensure this limit is not exceeded under worst-case power dissipation and ambient conditions, using the provided R_thJC = 4.9 K/W and R_thJA = 60 K/W values.

Can ISZ065N03L5SATMA1 be used as a synchronous rectifier in a buck converter?

Yes-the integrated body diode has V_SD = 0.89 V @ 20 A and Q_rr = 10 nC, enabling efficient synchronous rectification in high-frequency buck topologies. Its low R_DS(on) and fast switching characteristics allow it to replace external Schottky diodes without compromising efficiency or EMI performance.

Is ISZ065N03L5SATMA1 compatible with standard reflow soldering profiles?

Yes-it is qualified for lead-free reflow per JEDEC J-STD-020, with a peak reflow temperature of 260 °C (maximum) and moisture sensitivity level (MSL) 1. The TSDSON-8 FL package supports standard PCB assembly processes, including stencil printing, pick-and-place, and convection reflow, without special handling requirements.

Does ISZ065N03L5SATMA1 require a gate resistor for stability?

A gate resistor (typically 1–5 Ω) is recommended to dampen gate oscillation and control dV/dt during switching. The datasheet specifies test conditions using R_G,ext = 1.6 Ω for dynamic parameter characterization, and layout practices should minimize gate loop inductance to prevent ringing and shoot-through risk in high-speed applications.

ISZ065N03L5SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 670 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSDSON-8-FL

ISZ065N03L5SATMA1 FAQ

1.How can I place an order for ISZ065N03L5SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISZ065N03L5SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISZ065N03L5SATMA1 reliable?

The price and inventory of ISZ065N03L5SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISZ065N03L5SATMA1 is usually 5 days.

3.What payment methods are accepted for ISZ065N03L5SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISZ065N03L5SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISZ065N03L5SATMA1?

ISZ065N03L5SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISZ065N03L5SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISZ065N03L5SATMA1?

For technical support, including ISZ065N03L5SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISZ065N03L5SATMA1 requirements.

6.How does Aetrix verify that ISZ065N03L5SATMA1 is sourced from the original manufacturer or authorized distributors?

All ISZ065N03L5SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISZ065N03L5SATMA1 meets industry standards.

7.What is the process for return or replacement of ISZ065N03L5SATMA1?

All ISZ065N03L5SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISZ065N03L5SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISZ065N03L5SATMA1 part is unused and in its original packaging.

Return procedure for ISZ065N03L5SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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