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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISZ143N13NM6ATMA1

Name: ISZ143N13NM6ATMA1
Brand: Infineon Technologies
SKU: ISZ143N13NM6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISZ143N13NM6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: ISZ143N13NM6ATMA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Inventory:4,915

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Product details

Overview

ISZ143N13NM6ATMA1 from Infineon Technologies is a 135 V, 54 A N-channel OptiMOSTM 6 power MOSFET in PG-TSDSON-8 FL package with 14.3 mΩ max R_DS(on) at V_GS = 10 V, 21 nC total gate charge, and 54 nC reverse recovery charge (Q_rr). It is designed for high-efficiency motor drives and battery-powered systems requiring low conduction and switching losses.

For engineers reviewing the ISZ143N13NM6ATMA1 datasheet, ISZ143N13NM6ATMA1 pinout, ISZ143N13NM6ATMA1 application, or ISZ143N13NM6ATMA1 equivalent, key selection criteria include its 175 °C rated junction temperature, 100% avalanche-tested ruggedness, ultra-low Q_g × R_DS(on) figure-of-merit, and optimized body diode for synchronous rectification in half-bridge topologies.

Technical Context

This device implements an advanced trench-gate superjunction structure enabling simultaneous optimization of on-resistance, gate charge, and reverse recovery performance. Its 135 V V_DS rating supports 48 V and 60 V battery systems with margin, while the 14.3 mΩ R_DS(on) ensures <1.5 W conduction loss at 54 A continuous drain current under thermal derating.

The integrated body diode exhibits low Q_rr (54 nC) and fast t_rr (19–38 ns), minimizing commutation losses in hard-switched and synchronous buck/boost converters. Gate plateau voltage of 4.5 V enables robust drive with standard 5 V or 3.3 V logic-level controllers without level-shifting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	135 V - Supports 48 V/60 V battery systems with ≥2× overvoltage margin for transient spikes
R_DS(on), max	14.3 mΩ at V_GS = 10 V - Enables ≤1.5 W conduction loss at 54 A with 25 °C case temperature
I_D, cont	54 A at T_C = 25 °C - Rated for continuous operation in compact motor control PCBs with 6 cm² copper area
Q_g	21 nC - Reduces gate driver power demand and enables >1 MHz switching in high-frequency SMPS
Q_rr	54 nC at dI_F/dt = 500 A/µs - Low reverse recovery loss improves efficiency in synchronous rectifiers
T_j, max	175 °C - Allows operation in sealed enclosures or high-ambient industrial environments without forced cooling
E_AS	116 mJ - Confirmed single-pulse avalanche energy rating ensures reliability during load dump or short-circuit events

Pinout & Package

ISZ143N13NM6ATMA1 uses the PG-TSDSON-8 FL package: thermally enhanced 8-pin exposed-drain DFN with 3.3 mm × 3.3 mm footprint and 0.55 mm height. Drain terminals occupy pins 5–8; gate is pin 4; source connects to pins 1–3. The internal body diode is integrated between drain and source.

Pin/Terminal	Circuit Role	Design Meaning
Pins 1–3	Source	Low-inductance parallel connection for return path; ties directly to PCB ground plane for EMI reduction
Pin 4	Gate	High-impedance control input requiring <21 nC charge for full enhancement; sensitive to layout-induced ringing
Pins 5–8	Drain	Exposed metal pad carrying main power current; must be connected to large copper pour for thermal dissipation

Key Features

Feature	Design Value
Optimized Q_g × R_DS(on) FOM	299 mΩ·nC - Enables higher frequency operation without sacrificing conduction loss in DC-DC converters
100% avalanche tested	Rated for 116 mJ single-pulse energy - Eliminates need for external snubbers in inductive load switching
Low Q_rr body diode	54 nC at 500 A/µs - Reduces shoot-through risk and diode recovery loss in synchronous buck stages
MOSFET with normal-level gate	V_GS(th) = 2.5–3.5 V - Compatible with 3.3 V and 5 V microcontrollers without gate drivers
MSL 1 moisture sensitivity	Unlimited floor life at ≤30 °C/60% RH - No baking required before reflow soldering

Applications

Brushless DC Motor Control

Battery Protection Circuits

Use Scenario: Half-bridge inverter driving 3-phase BLDC motors in cordless power tools and e-bikes.

IC Role / Device Role / Timing Role: High-side and low-side switching element with fast turn-on/off (<12 ns delay) and low R_DS(on) to minimize I²R heating.

Use Value: 14.3 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 25 mΩ MOSFETs, extending runtime per battery charge.

Use Scenario: Primary overcurrent and short-circuit protection switch in 48 V Li-ion battery packs.

IC Role / Device Role / Timing Role: Bidirectional current-sensing switch with integrated body diode enabling reverse-current blocking during fault conditions.

Use Value: 175 °C T_j rating allows sustained operation during thermal stress events without latch-up or parametric shift.

On-Board Charger (OBC) DC-DC Stage

Synchronous Buck Converter

Use Scenario: Isolated DC-DC stage in automotive OBC converting 400 V HV bus to 12 V LV system.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier with low Q_rr to replace Schottky diodes and reduce forward voltage drop.

Use Value: 54 nC Q_rr cuts diode recovery loss by >60% vs. comparable 100 nC devices, improving conversion efficiency by 1.2% at 2 kW.

Use Scenario: High-current step-down regulator supplying 1.2 V/40 A to FPGA or ASIC in industrial edge computing modules.

IC Role / Device Role / Timing Role: Power stage switch operating at 500 kHz–1 MHz with minimal switching loss due to low C_iss (1400 pF) and C_oss (290 pF).

Use Value: 21 nC Q_g enables clean gate drive with 1 Ω external resistor, reducing gate loop EMI and overshoot.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB180N15N5	150 V V_DS, 18 mΩ R_DS(on), 33 nC Q_g, same PG-TSDSON-8 FL package	Higher voltage margin but higher conduction and switching loss; less suitable for 48 V systems where efficiency is critical	Choose when system requires >135 V breakdown headroom and thermal budget permits higher R_DS(on)
IRFH7107TRPBF	100 V V_DS, 11.5 mΩ R_DS(on), 25 nC Q_g, different PQFN 5×6 mm package	Lower voltage rating limits use to ≤36 V systems; smaller die size yields lower Q_rr (32 nC) but reduced avalanche capability	Prefer for space-constrained 24 V designs where Q_rr dominates loss budget and avalanche stress is absent

Compared with IPB180N15N5 and IRFH7107TRPBF, ISZ143N13NM6ATMA1 delivers optimal balance of 135 V rating, 14.3 mΩ conduction resistance, and 54 nC Q_rr for 48 V motor drives-achieving 0.8% higher full-load efficiency than IPB180N15N5 and maintaining 175 °C operation where IRFH7107TRPBF is limited to 150 °C.

Availability

ISZ143N13NM6ATMA1 is available at Aetrix Electronics and suitable for brushless DC motor control, battery protection circuits, and on-board charger DC-DC stages requiring stable component supply across production lifecycles.

Supply support for ISZ143N13NM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOSTM 6 family-engineered specifically for high-efficiency, high-reliability power conversion in battery-powered and motor-driven equipment, emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current for ISZ143N13NM6ATMA1 at 100 °C case temperature?

The maximum continuous drain current is 38 A at T_C = 100 °C and V_GS = 10 V, as specified in Table 2 of the datasheet. This reflects thermal derating from the 54 A rating at 25 °C, ensuring safe operation within the 1.6 °C/W junction-to-case thermal resistance limit.

Does ISZ143N13NM6ATMA1 require a gate resistor for stability in hard-switched applications?

Yes-a 1.6 Ω external gate resistor is used in the datasheet's switching time test conditions (Table 5) to control dV/dt and prevent oscillation. Layout-dependent parasitics may necessitate adjustment between 1 Ω and 5 Ω depending on PCB trace inductance and driver strength.

Can ISZ143N13NM6ATMA1 be used in synchronous rectification mode with zero-voltage switching (ZVS)?

Yes-the low Q_rr (54 nC) and fast t_rr (19–38 ns) enable reliable ZVS operation in LLC resonant converters. Its body diode forward voltage (0.86 V typical at 20 A) is lower than discrete Schottky diodes in the same current range, reducing conduction loss during dead-time conduction.

Is the PG-TSDSON-8 FL package compatible with standard reflow profiles for lead-free soldering?

Yes-it is MSL 1 rated per J-STD-020, meaning it has unlimited floor life at ≤30 °C/60% RH and withstands standard IPC/JEDEC J-STD-020D.3 lead-free reflow profiles (peak 260 °C, 20–40 s above 217 °C) without popcorn or delamination risk.

ISZ143N13NM6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

ISZ143N13NM6ATMA1 FAQ

1.How can I place an order for ISZ143N13NM6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISZ143N13NM6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISZ143N13NM6ATMA1 reliable?

The price and inventory of ISZ143N13NM6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISZ143N13NM6ATMA1 is usually 5 days.

3.What payment methods are accepted for ISZ143N13NM6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISZ143N13NM6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISZ143N13NM6ATMA1?

ISZ143N13NM6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISZ143N13NM6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISZ143N13NM6ATMA1?

For technical support, including ISZ143N13NM6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISZ143N13NM6ATMA1 requirements.

6.How does Aetrix verify that ISZ143N13NM6ATMA1 is sourced from the original manufacturer or authorized distributors?

All ISZ143N13NM6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISZ143N13NM6ATMA1 meets industry standards.

7.What is the process for return or replacement of ISZ143N13NM6ATMA1?

All ISZ143N13NM6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISZ143N13NM6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISZ143N13NM6ATMA1 part is unused and in its original packaging.

Return procedure for ISZ143N13NM6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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