Infineon Technologies ISZ15EP15LMATMA1

Overview

ISZ15EP15LMATMA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET rated for -150 V drain-source voltage, 1500 mΩ max R_DS(on) at V_GS = -4.5 V, -2.7 A continuous drain current, and fully qualified for industrial applications per JEDEC. It integrates an internal body diode and is packaged in PG-TSDSON-8 FL for high-density power switching in DC-DC converters and load switches.

For engineers reviewing the ISZ15EP15LMATMA1 datasheet, ISZ15EP15LMATMA1 pinout, ISZ15EP15LMATMA1 application, or ISZ15EP15LMATMA1 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = -1 to -2 V), avalanche ruggedness (E_AS = 60 mJ), thermal resistance (R_thJC = 5.7 °C/W), and low Q_oss (3.3 nC) for efficient high-voltage switching.

Technical Context

This device operates as a high-side or reverse-polarity protection switch in industrial power rails, leveraging its P-channel topology to simplify gate drive circuitry. Its -150 V V_DS rating and 100% avalanche testing support robust operation under inductive load switching and transient overvoltage conditions.

The MOSFET features low gate charge (Q_g = 11–14 nC at V_GS = -10 V) and fast switching dynamics (t_d(off) = 14.3 ns, t_f = 16.4 ns), enabling high-frequency operation up to several hundred kHz while maintaining low conduction and switching losses.

Key Specifications

Pinout & Package

Package: PG-TSDSON-8 FL - thermally enhanced leadless package with exposed drain pad (pins 5–8) for low thermal resistance and high power density mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Compared with IPD95R1K2P7 and IRFR9024N, ISZ15EP15LMATMA1 delivers optimal balance of logic-level drive, industrial qualification, and low Q_oss in a compact thermally optimized package-making it preferable for new 100–150 V DC industrial power switches where gate drive simplicity and avalanche safety are critical.

Availability

ISZ15EP15LMATMA1 is available at Aetrix Electronics and suitable for industrial DC-DC converters, reverse polarity protection circuits, and motor drive enable switches requiring stable component supply and long-term manufacturability.

Supply support for ISZ15EP15LMATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOS™ Power-Transistor family, engineered specifically for high-efficiency, high-reliability industrial power conversion and protection-emphasizing low R_DS(on), robust avalanche capability, and logic-level compatibility in thermally constrained environments.

FAQ

What is the maximum junction temperature and how does it affect continuous current rating?

The ISZ15EP15LMATMA1 has a maximum junction temperature of 175 °C. At T_C = 25 °C, its continuous drain current is -2.7 A; this de-rates linearly to -1.83 A at T_C = 100 °C per datasheet Figure 2. Thermal design must maintain case temperature below limits using the exposed drain pad and ≥6 cm² copper area to sustain rated current.

Does this MOSFET require a gate resistor, and what value is recommended for 100 kHz switching?

Yes-a gate resistor is required to control dV/dt and prevent ringing. For 100 kHz hard-switching with V_GS = -10 V drive, a 1.6 Ω external resistor matches the test condition used in datasheet switching time measurements (t_d(off), t_f). Lower values increase EMI risk; higher values slow switching and raise losses.

Can the internal body diode be used for freewheeling in a synchronous buck converter?

No-the internal body diode has a typical forward voltage of -0.79 V at -1 A and reverse recovery charge (Q_rr) of 92–184 nC, making it unsuitable for high-frequency freewheeling. It is intended only for clamping or reverse polarity protection; external Schottky or synchronous FETs are required for efficient freewheeling.

Is the PG-TSDSON-8 FL package compatible with standard reflow profiles for lead-free assembly?

Yes-the PG-TSDSON-8 FL package is qualified for lead-free reflow per J-STD-020, with peak temperature up to 260 °C. The exposed drain pad requires adequate stencil design (≥80% paste coverage) and thermal relief patterns to ensure void-free solder joints and optimal thermal transfer to the PCB.