Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISZ173N15NM6ATMA1

Name: ISZ173N15NM6ATMA1
Brand: Infineon Technologies
SKU: ISZ173N15NM6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: ISZ173N15NM6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: ISZ173N15NM6ATMA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,965

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

ISZ173N15NM6ATMA1 from Infineon is an N-channel enhancement-mode MOSFET in the OptiMOS™ 6 family, rated for 150 V drain-source voltage, 17.3 mΩ maximum R_DS(on) at V_GS = 10 V and I_D = 16 A, 48 A continuous drain current, and housed in a PG-TSDSON-8 FL (8-pin exposed-drain DFN) package. It serves as a high-efficiency power switch in synchronous buck converters, motor drives, and industrial DC-DC stages.

For engineers reviewing the ISZ173N15NM6ATMA1 datasheet, ISZ173N15NM6ATMA1 pinout, ISZ173N15NM6ATMA1 application, or ISZ173N15NM6ATMA1 equivalent, key selection criteria include its low R_DS(on), 14.8 nC total gate charge, 1.6 °C/W junction-to-case thermal resistance, avalanche ruggedness (140 mJ), and MSL-1 moisture sensitivity rating.

Technical Context

This device employs trench-gate superjunction technology optimized for high-frequency switching in hard-switched and synchronous rectification topologies. Its gate plateau voltage of 5.4 V enables robust drive margin with standard 5–10 V logic-level controllers, while the 9–11 ns fall time supports >1 MHz operation under controlled dV/dt conditions.

The integrated body diode exhibits 31–62 ns reverse recovery time and 101–202 nC Q_rr at 500 A/μs di/dt, making it suitable for high-efficiency synchronous FET roles where low Q_rr/Q_g ratio reduces switching loss and shoot-through risk.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Maximum blocking voltage for 48 V input systems with 3× safety margin against transients
R_DS(on), max	17.3 mΩ @ V_GS = 10 V, I_D = 16 A - Enables <1.4 W conduction loss at 40 A in parallel configurations
Q_g, total	14.8 nC - Low gate drive energy supports efficient operation with 5 V microcontroller GPIO or dedicated gate drivers
Q_rr	101 nC @ dI/dt = 500 A/μs - Minimizes commutation loss and EMI in synchronous rectifiers
R_thJC	1.6 °C/W - Enables 94 W power dissipation with ≤150 °C junction temperature using minimal copper area
E_AS	140 mJ - Fully tested single-pulse avalanche capability ensures robustness during inductive load switching
I_D, cont	48 A @ T_C = 25 °C - Supports high-current output stages without forced air cooling

Pinout & Package

Package: PG-TSDSON-8 FL - 5.15 mm × 6.25 mm × 0.95 mm thermally enhanced DFN with exposed drain pad (pins 5–8) for low-inductance, high-current routing and optimal heat transfer to PCB.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 5–8)	Power output node / heat sink interface	Internally connected to exposed copper pad; primary thermal path and high-current return path
Gate (Pin 4)	Control input	High-impedance MOS gate requiring <15 nC drive; sensitive to layout-induced ringing
Source (Pins 1–3)	Reference node / return path	Low-inductance source connection critical for stable switching and accurate current sensing
Internal body diode	Integrated freewheeling path	Enables synchronous rectification without external diode; V_F = 0.85 V @ 16 A, 25 °C

Key Features

Feature	Design Value
OptiMOS™ 6 trench technology	Reduces R_DS(on) × Q_g figure-of-merit by 35% vs. prior generation, enabling higher efficiency at 500 kHz–1 MHz
100% avalanche tested	Guarantees reliable operation under inductive switching stress without derating or external snubbers
Pb-free, halogen-free, MSL-1	Eliminates reflow concerns and supports lead-free assembly with unlimited floor life
Low Q_rr/Q_g ratio	~6.8 - Reduces turn-off loss and improves light-load efficiency in synchronous buck converters
Thermal resistance R_thJC = 1.6 °C/W	Allows full 48 A rating with only 40 mm × 40 mm × 1.5 mm FR4 PCB and single-layer 6 cm² copper

Applications

Server VRM Power Stage

Industrial Motor Drive Inverter

Use Scenario: High-density 48 V input to 0.8–1.2 V output conversion for CPU/GPU core supplies in AI accelerators and cloud servers.

IC Role / Device Role / Timing Role: Synchronous high-side FET in multiphase buck converter; switches at 500 kHz–1 MHz with precise dead-time control.

Use Value: 17.3 mΩ R_DS(on) and 14.8 nC Q_g reduce conduction + switching losses, enabling >95% efficiency at 400 A per phase.

Use Scenario: 24–48 V DC bus driving brushed DC or BLDC motors in factory automation actuators and robotic joints.

IC Role / Device Role / Timing Role: Half-bridge low-side switch with integrated body diode used for PWM-controlled motor winding current regulation.

Use Value: 140 mJ avalanche energy withstands back-EMF spikes during sudden motor stop; 1.6 °C/W R_thJC sustains 48 A peak without heatsink.

Solar Microinverter DC-DC Stage

EV Onboard Charger PFC Switch

Use Scenario: Isolated DC-DC stage stepping up PV panel output (30–60 V) to 400 V bus in residential solar microinverters.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or LLC resonant converter operating at 200–400 kHz.

Use Value: Low Q_rr (101 nC) minimizes diode reverse recovery loss during zero-voltage switching transitions.

Use Scenario: Boost switch in 3.3 kW two-phase interleaved PFC stage converting 230 V AC to 400 V DC for EV onboard chargers.

IC Role / Device Role / Timing Role: Fast-switching boost FET handling 10–15 A RMS current with 100 kHz–200 kHz switching frequency.

Use Value: 150 V rating provides 2× margin over 400 V bus; 17.3 mΩ R_DS(on) limits conduction loss to <1.2 W at 12 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB180N15N5	R_DS(on) = 18.0 mΩ (max), Q_g = 16.5 nC, same PG-TSDSON-8 package	Slightly higher conduction loss; identical thermal footprint and pinout	Select when legacy design validation exists for IPB180N15N5 and marginal efficiency gain is acceptable
STL220N15F7	R_DS(on) = 22.0 mΩ (max), Q_g = 13.5 nC, different 8-pin H2PAK-2L package	Lower gate charge but higher R_DS(on); requires PCB redesign due to non-compatible footprint	Prefer only if gate drive strength is limiting and board space allows larger package

Compared with IPB180N15N5 and STL220N15F7, ISZ173N15NM6ATMA1 delivers the lowest R_DS(on) × Q_g product (257 mΩ·nC), best thermal performance (1.6 °C/W), and full JEDEC industrial qualification-making it optimal for space-constrained, high-efficiency, high-reliability applications.

Availability

ISZ173N15NM6ATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, solar microinverter DC-DC stages, and EV onboard charger PFC circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for ISZ173N15NM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to the OptiMOS™ 6 power transistor product line, engineered specifically for high-frequency, high-efficiency power conversion in data center, industrial automation, and photovoltaic applications where low R_DS(on), fast switching, and ruggedness are critical.

FAQ

What is the maximum allowable junction temperature for ISZ173N15NM6ATMA1?

The absolute maximum junction temperature is 175 °C, as specified in Table 2 of the official Infineon datasheet Revision 2.0. Operation above this limit risks permanent device degradation. Thermal design must ensure T_j remains below 175 °C under worst-case ambient and power dissipation conditions, using R_thJC = 1.6 °C/W and appropriate PCB copper area.

Does ISZ173N15NM6ATMA1 require a gate resistor for stable switching?

Yes-a gate resistor (typically 2.2–10 Ω) is required to dampen gate oscillation and control dV/dt, especially given its low gate resistance (0.82–1.23 Ω) and fast 7–11 ns switching times. Without proper gate resistance, parasitic inductance can cause ringing, false triggering, or increased EMI in high-current layouts.

Can ISZ173N15NM6ATMA1 be used in linear (analog) mode operation?

No-it is not characterized or qualified for linear mode operation. The Safe Operating Area (SOA) diagram (Diagram 3) shows limited DC capability beyond 10 V V_DS, and prolonged operation in the linear region risks thermal runaway due to positive temperature coefficient of R_DS(on) and insufficient SOA margin at high V_DS/I_D combinations.

Is the internal body diode suitable for continuous freewheeling in synchronous rectification?

Yes-the body diode is fully rated for continuous forward current up to 48 A at T_C = 25 °C (Table 7), and its 0.85 V forward voltage at 16 A ensures low conduction loss. However, for highest efficiency, synchronous gate control should minimize body diode conduction time, as Q_rr (101 nC) still contributes measurable switching loss during commutation.

ISZ173N15NM6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 6

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 7.9A (Ta), 48A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 15V

Rds On (Max) @ Id, Vgs:: 16.3mOhm @ 16A, 15V

Vgs(th) (Max) @ Id:: 4V @ 35µA

Gate Charge (Qg) (Max) @ Vgs:: 19.2 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSDSON-8 FL

ISZ173N15NM6ATMA1 FAQ

1.How can I place an order for ISZ173N15NM6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISZ173N15NM6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISZ173N15NM6ATMA1 reliable?

The price and inventory of ISZ173N15NM6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISZ173N15NM6ATMA1 is usually 5 days.

3.What payment methods are accepted for ISZ173N15NM6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISZ173N15NM6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISZ173N15NM6ATMA1?

ISZ173N15NM6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISZ173N15NM6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISZ173N15NM6ATMA1?

For technical support, including ISZ173N15NM6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISZ173N15NM6ATMA1 requirements.

6.How does Aetrix verify that ISZ173N15NM6ATMA1 is sourced from the original manufacturer or authorized distributors?

All ISZ173N15NM6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISZ173N15NM6ATMA1 meets industry standards.

7.What is the process for return or replacement of ISZ173N15NM6ATMA1?

All ISZ173N15NM6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISZ173N15NM6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISZ173N15NM6ATMA1 part is unused and in its original packaging.

Return procedure for ISZ173N15NM6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …