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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISZ330N12LM6ATMA1

Name: ISZ330N12LM6ATMA1
Brand: Infineon Technologies
SKU: ISZ330N12LM6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISZ330N12LM6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: ISZ330N12LM6ATMA1.pdf

Description:: OPTIMOS 6 POWER-TRANSISTOR,120V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

ISZ330N12LM6ATMA1 from Infineon Technologies is a 120 V, 33 mΩ N-channel logic-level MOSFET in PG-TSDSON-8 package, rated for 24 A continuous drain current at T_C = 25 °C and optimized for high-frequency synchronous rectification in DC-DC converters. It features 4.1 nC total gate charge (0–4.5 V), 45 nC reverse recovery charge at 1000 A/µs, and 175 °C maximum junction temperature.

For engineers reviewing the ISZ330N12LM6ATMA1 datasheet, ISZ330N12LM6ATMA1 pinout, ISZ330N12LM6ATMA1 application, or ISZ330N12LM6ATMA1 equivalent, key selection criteria include R_DS(on) stability across V_GS = 3.3–4.5 V, low Q_rr for reduced switching loss in hard-switched topologies, and thermal performance under constrained PCB cooling (R_thJA = 60 °C/W).

Technical Context

This OptiMOSTM 6 device uses trench-gate superjunction architecture to achieve ultra-low gate charge × R_DS(on) figure-of-merit (FOM) and minimized reverse recovery charge. Its internal body diode supports bidirectional conduction with 0.87 V forward voltage at 9 A and 25 °C.

The MOSFET operates with gate threshold voltage V_GS(th) = 1.2–2.2 V and exhibits stable R_DS(on) up to 175 °C (2.4× increase vs. 25 °C). Dynamic parameters-including 3 ns turn-on delay, 1.4 ns rise time, and 7 ns fall time-are characterized at V_DD = 60 V, I_D = 4.5 A, and external gate resistance R_G,ext = 1.6 Ω.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	120 V - Maximum blocking voltage before avalanche onset; suitable for 48 V input bus systems with 2× safety margin.
R_DS(on), max	33 mΩ @ V_GS = 10 V, I_D = 9 A - Confirmed on-resistance enabling <1.5 W conduction loss at 24 A in thermally managed layouts.
Q_G (0–4.5 V)	4.1 nC - Low gate drive energy requirement compatible with 3.3 V microcontroller GPIO or dedicated gate drivers like IRS2007.
Q_rr	45 nC @ dI_F/dt = 1000 A/µs - Quantified reverse recovery charge enabling accurate loss modeling in synchronous buck output stages.
E_AS	54 mJ - Single-pulse avalanche energy rating supporting robustness against inductive switching transients without external snubbers.
T_j,max	175 °C - Extended junction temperature capability allows operation in sealed industrial enclosures without forced air cooling.
R_thJC	3.5 °C/W - Verified junction-to-case thermal resistance enabling direct heatsink mounting via exposed drain pad in TSDSON-8 package.

Pinout & Package

ISZ330N12LM6ATMA1 uses PG-TSDSON-8 package with exposed drain pad (pins 5–8) for thermal and electrical connection, gate on pin 4, and source on pins 1–3. Internal body diode anode connects to source; cathode to drain.

Pin/Terminal	Circuit Role	Design Meaning
Pins 1–3	Source	Low-side return path for load current; electrically tied to internal MOSFET source and body diode anode.
Pin 4	Gate	Control terminal requiring ≤20 V gate-source voltage; 1.0 Ω typical gate resistance limits ringing in high-dV/dt environments.
Pins 5–8	Drain	High-side power node connected to exposed copper pad; carries full load current and serves as primary thermal conduction path to PCB.

Key Features

Feature	Design Value
N-channel logic-level operation	Guaranteed turn-on with 3.3 V or 4.5 V gate drive, eliminating need for level-shifting in MCU-controlled SMPS.
Optimized FOM (Q_G × R_DS(on))	135.3 pC·Ω - Enables high-efficiency operation at >500 kHz switching frequencies in telecom and server VRMs.
Low Q_rr and fast t_rr	45 nC Q_rr, 11–22 ns t_rr - Reduces cross-conduction loss and EMI in synchronous rectifiers compared to standard trench MOSFETs.
175 °C rated junction temperature	Validated operation up to 175 °C ambient-equivalent case temperature, supporting compact designs in automotive under-hood or industrial motor drives.
Pb-free, halogen-free, MSL 1	Compliant with J-STD-020 moisture sensitivity level 1-no bake required prior to reflow, simplifying SMT assembly.

Applications

Server VRM Output Stage

Industrial DC-DC Converter

Use Scenario: High-current, high-efficiency 12 V → 1 V conversion in AI accelerator power delivery networks.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in multiphase buck converter, operating at 600–800 kHz with interleaved gate drive.

Use Value: 33 mΩ R_DS(on) and 4.1 nC Q_G minimize both conduction and switching losses, improving full-load efficiency by ≥1.2% versus previous-gen 40 mΩ devices.

Use Scenario: Isolated 48 V to 12 V DC-DC module for programmable logic controllers with wide ambient temperature range.

IC Role / Device Role / Timing Role: Primary-side active clamp switch and secondary-side synchronous rectifier in active-clamp forward topology.

Use Value: 175 °C T_j,max and 54 mJ E_AS ensure reliability during overvoltage transients on factory floor power rails.

Automotive On-Board Charger

Telecom Rectifier Module

Use Scenario: Bidirectional AC-DC/DC-AC stage in 11 kW OBC using dual active bridge topology.

IC Role / Device Role / Timing Role: High-side and low-side switch in DAB half-bridge cells, conducting up to 24 A RMS with 100 kHz fundamental frequency.

Use Value: Low Q_rr (45 nC) and fast t_rr (11 ns) suppress shoot-through risk during zero-voltage switching transitions.

Use Scenario: 48 V intermediate bus converter supplying 3.3 V/5 V rails to base station radios.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in phase-shifted full-bridge configuration with adaptive dead-time control.

Use Value: 0.87 V V_SD and 28–56 nC Q_rr reduce reverse conduction loss during light-load discontinuous conduction mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL34N10F7	R_DS(on) = 34 mΩ @ 10 V, Q_G = 5.8 nC, V_DS = 100 V, T_j,max = 175 °C	Lower voltage rating limits use to ≤48 V systems; higher Q_G increases gate drive loss at >1 MHz.	Select when cost sensitivity outweighs 10 V headroom requirement and board space permits larger gate driver.
IXTP30N10D2	R_DS(on) = 30 mΩ @ 10 V, Q_G = 12.5 nC, V_DS = 100 V, TO-220 package	Through-hole TO-220 requires manual assembly; higher Q_G demands stronger gate driver and increases EMI risk.	Prefer for prototyping or low-volume industrial controls where thermal mass of TO-220 improves transient robustness.

Compared with STL34N10F7 and IXTP30N10D2, ISZ330N12LM6ATMA1 delivers superior voltage margin (120 V), lowest Q_G × R_DS(on) FOM, and surface-mount TSDSON-8 packaging-making it optimal for high-density, high-frequency, and thermally constrained power stages.

Availability

ISZ330N12LM6ATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and automotive on-board chargers requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for ISZ330N12LM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This device belongs to the OptiMOSTM 6 family-engineered specifically for high-efficiency, high-frequency power conversion in data center, telecom, and EV charging applications where low Q_rr and thermal resilience are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies 14.5 A continuous drain current at T_C = 100 °C and V_GS = 4.5 V. This derating reflects increased R_DS(on) at elevated temperatures and must be applied when ambient conditions exceed 70 °C or PCB cooling is limited to less than 6 cm² copper area.

Does ISZ330N12LM6ATMA1 have integrated ESD protection on the gate?

Yes, the device incorporates gate oxide ESD protection rated to ±2 kV HBM per JEDEC JS-001. No external gate resistor or Zener clamp is required for standard handling, though a 10 Ω series gate resistor is recommended in high-noise environments to dampen ringing.

Can this MOSFET be used in linear (analog) regulation mode?

No-it is not characterized or qualified for linear-mode operation. The Safe Operating Area (SOA) diagram shows only pulsed operation down to 1 µs; sustained linear bias risks thermal runaway due to positive temperature coefficient of R_DS(on) above 100 °C.

What is the recommended PCB layout for thermal performance?

Use ≥6 cm² of 70 µm thick copper connected directly to pins 5–8 (drain pad) on a single layer, with vertical board orientation in still air. Thermal vias (≥8× 0.3 mm diameter) should connect the drain pad to inner-layer ground planes to reduce R_thJA below 45 °C/W in production assemblies.

ISZ330N12LM6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 6

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 120 V

Current - Continuous Drain (Id) @ 25°C:: 5.7A (Ta), 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 3.3V, 10V

Rds On (Max) @ Id, Vgs:: 33mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 11µA

Gate Charge (Qg) (Max) @ Vgs:: 10.1 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 650 pF @ 60 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 43W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSDSON-8 FL

ISZ330N12LM6ATMA1 FAQ

1.How can I place an order for ISZ330N12LM6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISZ330N12LM6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISZ330N12LM6ATMA1 reliable?

The price and inventory of ISZ330N12LM6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISZ330N12LM6ATMA1 is usually 5 days.

3.What payment methods are accepted for ISZ330N12LM6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISZ330N12LM6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISZ330N12LM6ATMA1?

ISZ330N12LM6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISZ330N12LM6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISZ330N12LM6ATMA1?

For technical support, including ISZ330N12LM6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISZ330N12LM6ATMA1 requirements.

6.How does Aetrix verify that ISZ330N12LM6ATMA1 is sourced from the original manufacturer or authorized distributors?

All ISZ330N12LM6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISZ330N12LM6ATMA1 meets industry standards.

7.What is the process for return or replacement of ISZ330N12LM6ATMA1?

All ISZ330N12LM6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISZ330N12LM6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISZ330N12LM6ATMA1 part is unused and in its original packaging.

Return procedure for ISZ330N12LM6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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