Microchip Technology JAN1N5629A

Overview

JAN1N5629A from Microsemi (now part of Microchip Technology) is a hermetically sealed, unidirectional transient voltage suppressor (TVS) diode in DO-13 metal package, designed for high-reliability military avionics and industrial systems. It features 6.45 V minimum breakdown voltage (V_BR), 5.80 V rated standoff voltage (V_WM), 10.5 V maximum clamping voltage (V_C) at 143 A peak pulse current, and 1500 W peak pulse power rating per 10/1000 µs waveform.

For engineers reviewing the JAN1N5629A datasheet, JAN1N5629A pinout, JAN1N5629A application, or JAN1N5629A equivalent, this device serves as a MIL-PRF-19500/500 qualified transient protector for inductive switching transients, ESD (IEC61000-4-2), EFT (IEC61000-4-4), and secondary lightning surges (IEC61000-4-5) in harsh-environment electronics.

Technical Context

The JAN1N5629A operates as a unidirectional avalanche diode with cathode connected to case, enabling fast clamping (<100 ps response) when reverse voltage exceeds V_WM. Its hermetic DO-13 metal-glass package ensures stable performance across -55°C to +175°C operating temperature range and inherent radiation hardness per MicroNote 050.

It delivers 1500 W peak pulse power at 25°C lead temperature with 0.01% repetition rate, supported by thermal resistance of 50°C/W junction-to-lead (0.375" from body). Standby leakage remains ≤1000 µA at 5.80 V V_WM, and forward surge capability reaches 200 A (8.3 ms half-sine).

Key Specifications

Pinout & Package

Package: DO-13 (DO-202AA), hermetically sealed metal-glass case with cathode electrically connected to case and marked by diode symbol. Weight: 1.4 g. Lead finish: Tin-Lead per MIL-STD-750 Method 2026.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with JAN1N5629A, the 1N5629A offers identical clamping and standoff performance at lower cost but lacks military traceability, while JANTXV1N5629A adds rigorous screening for ultra-high-reliability deployments-making JAN1N5629A the optimal balance of ruggedness, qualification, and supply chain maturity for defense avionics.

Availability

JAN1N5629A is available at Aetrix Electronics and suitable for aerospace avionics, military vehicle electronics, and high-reliability industrial control systems requiring stable component supply across extended product lifecycles and stringent procurement controls.

Supply support for JAN1N5629A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (acquired by Microchip Technology in 2018) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, discrete devices, and radiation-hardened components for aerospace, defense, and industrial markets.

The JAN1N5629A belongs to Microsemi's legacy military-qualified TVS diode family, engineered specifically for survivability in mission-critical electronic systems exposed to lightning, ESD, and inductive switching transients.

FAQ

What is the standoff voltage (V_WM) of the JAN1N5629A and how does it relate to circuit design?

The JAN1N5629A has a rated standoff voltage (V_WM) of 5.80 V, meaning it remains nonconductive up to this reverse voltage. In circuit design, V_WM must exceed the maximum continuous operating voltage of the protected line-e.g., for a 5 V logic rail, JAN1N5629A provides appropriate margin without leakage concerns. This value is confirmed in the Electrical Characteristics table on page 3 of the T4-LDS-0096 datasheet.

Is the JAN1N5629A pin-compatible with other devices in the 1N56xx series?

Yes-the JAN1N5629A shares the DO-13 package and cathode-to-case polarity with all 1N5629–1N5665A devices, making it mechanically and electrically interchangeable within its voltage grade. However, V_WM, V_BR, and V_C differ across the series; substituting with JAN1N5630A (6.40 V V_WM) would raise the clamping threshold and may compromise protection on 5 V rails. Always verify voltage ratings before substitution.

Does the JAN1N5629A meet IEC61000-4-5 for lightning surge protection?

Yes-the JAN1N5629A is validated for secondary lightning protection per IEC61000-4-5 across multiple classes: Class 1 (42 Ω source) up to 1N5665A, and Class 4 (2 Ω source) up to 1N5636A. As a member of the 1N5629–1N5636A group, JAN1N5629A supports Class 4 compliance when used with appropriate PCB layout and grounding per the standard's impedance requirements.

What is the thermal resistance specification for the JAN1N5629A and how does it impact layout?

The JAN1N5629A has a junction-to-lead thermal resistance of 50°C/W when measured at 0.375 inches (10 mm) from the case body. This requires PCB land patterns with ≥4 mm² copper pads (1 oz) and ≥1 mm wide traces to achieve the 110°C/W junction-to-ambient rating. Poor thermal design risks exceeding the 175°C max junction temperature during repetitive surges-verified in Figure 4 of the T4-LDS-0096 datasheet.

How does the JAN1N5629A differ from plastic-packaged equivalents like 1N6267A?

The JAN1N5629A uses a hermetic DO-13 metal-glass package, whereas 1N6267A is plastic axial-leaded. The metal package provides superior moisture resistance, long-term parameter stability, and radiation tolerance-critical for aerospace and military use. Plastic variants lack MIL-PRF-19500/500 qualification and exhibit higher leakage drift over time and temperature, making JAN1N5629A the preferred choice where reliability trumps cost.