Microchip Technology JAN1N5635A

Overview

JAN1N5635A from Microchip Technology (formerly Microsemi) is a hermetically sealed, unidirectional transient voltage suppressor (TVS) diode in DO-13 metal package, designed for high-reliability aerospace and military systems. It features 10.8 V minimum breakdown voltage (V_BR), 9.72 V rated standoff voltage (V_WM), 17.3 V maximum clamping voltage (V_C) at 87 A peak pulse current (I_PP), and 1500 W peak pulse power rating per 10/1000 µs waveform - used to protect avionics power rails and signal lines against ESD, EFT, and secondary lightning surges.

For engineers reviewing the JAN1N5635A datasheet, JAN1N5635A pinout, JAN1N5635A application, or JAN1N5635A equivalent, this part delivers radiation-hardened, MIL-PRF-19500/500 qualified surge suppression with sub-100 ps response time, hermetic DO-13 packaging, and verified IEC 61000-4-2/-4-4/-4-5 compliance for Class 3 secondary lightning protection at 2 Ω source impedance.

Technical Context

The JAN1N5635A operates as a unidirectional avalanche diode, entering controlled breakdown when reverse voltage exceeds its 10.8–11.4 V V_BR range at 1 mA test current. Its clamping action limits transients to ≤17.3 V while conducting up to 87 A peak pulse current under standardized 10/1000 µs surge conditions.

It is rated for operation from –55 °C to +175 °C, exhibits 0.078 %/°C temperature coefficient of V_BR, and maintains <5 µA standby leakage at 9.72 V V_WM. The cathode is internally connected to the metal case, enabling direct chassis-grounded mounting for low-inductance transient shunting.

Key Specifications

Pinout & Package

DO-13 (DO-202AA) hermetically sealed metal-glass package with axial leads; cathode terminal electrically bonded to case and marked with diode symbol on body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar unidirectional TVS diode applications.

Compared with JAN1N5635A, JANTXV1N5635A adds full space-level screening and tighter V_BR tolerance for ultra-high-reliability deployments, while 1N5635A omits military qualification entirely - making JAN1N5635A the optimal balance of proven aerospace performance and procurement accessibility.

Availability

JAN1N5635A is available at Aetrix Electronics and suitable for aerospace power distribution, avionics sensor interface, and military vehicle data bus applications requiring stable component supply, long-term obsolescence management, and traceable MIL-spec sourcing.

Supply support for JAN1N5635A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology acquired Microsemi in 2018 and maintains its high-reliability analog and discrete product portfolio, including radiation-hardened and MIL-qualified components for defense and space markets.

The JAN1N5635A belongs to Microchip's legacy Microsemi TVS diode family, engineered specifically for survivability in extreme electromagnetic environments - emphasizing hermetic sealing, fast clamping, and compliance with IEC 61000-4-x and MIL-STD-461 standards.

FAQ

What is the clamping voltage of JAN1N5635A at its rated peak pulse current?

The JAN1N5635A has a maximum clamping voltage (V_C) of 17.3 V when subjected to its rated 87 A peak pulse current (I_PP) under the standard 10/1000 µs waveform. This value is measured at T_A = 25 °C and defines the highest voltage the protected circuit will experience during a worst-case transient event. The low V_C relative to V_WM ensures downstream components like regulators and microcontrollers remain within safe operating limits. JAN1N5635A achieves this via optimized silicon junction design and low-inductance DO-13 package construction.

Is JAN1N5635A suitable for IEC 61000-4-5 secondary lightning protection?

Yes, JAN1N5635A is explicitly validated for Class 3 secondary lightning protection per IEC 61000-4-5 with a 2 Ω source impedance, as confirmed in the official datasheet (T4-LDS-0096 Rev. 3, Page 2). It meets the required surge current and voltage clamping thresholds for this classification, making it appropriate for protecting avionics and military vehicle electronics from induced lightning surges. Its 1500 W peak pulse power rating and sub-100 ps response ensure effective energy diversion without degradation. JAN1N5635A's hermetic DO-13 package further enhances reliability in high-energy transient environments.

What does the "JAN" prefix signify for JAN1N5635A?

The "JAN" prefix on JAN1N5635A indicates compliance with MIL-PRF-19500/500, the U.S. military specification for semiconductor devices. It certifies that the part has undergone rigorous screening-including temperature cycling, burn-in, and parametric testing-to ensure performance across –55 °C to +175 °C and long-term reliability in demanding applications. Unlike commercial 1N5635A, JAN1N5635A is manufactured and tested to meet government procurement standards, with full traceability and documentation. JAN1N5635A is not a drop-in replacement for non-JAN variants due to stricter quality and environmental validation.

How is polarity marked on the JAN1N5635A DO-13 package?

The JAN1N5635A uses cathode-to-case polarity: the metal case and lead 1 (shorter or marked lead) are the cathode, while lead 2 is the anode. Polarity is indicated by a molded diode symbol on the glass envelope adjacent to the cathode end. This configuration allows direct mounting of the case to a grounded chassis or copper pour, minimizing clamping loop inductance - a critical design requirement for effective high-speed transient suppression. The marking is permanent and visible under standard inspection; no additional silkscreen or label is required. JAN1N5635A's polarity alignment must be verified during PCB layout to avoid reverse-bias failure.

Does JAN1N5635A require derating at elevated temperatures?

Yes, JAN1N5635A requires derating of its DC power dissipation above +125 °C, with linear reduction to zero at +175 °C per Figure 3 in the datasheet. However, its peak pulse power rating (1500 W) remains valid up to +175 °C for non-repetitive events, as TVS operation relies on transient avalanche rather than steady-state conduction. The device's thermal resistance is 50 °C/W junction-to-lead (at 10 mm from body), so proper heatsinking or PCB copper area is essential for repeated surge duty cycles. JAN1N5635A's wide operating range makes it suitable for engine-mounted or avionics bay applications where ambient temperatures exceed 100 °C.