Microchip Technology JAN1N5640A

Overview

JAN1N5640A from Microsemi (now Microchip) is a hermetically sealed, unidirectional transient voltage suppressor (TVS) diode in DO-13 metal package, designed for high-reliability aerospace and military applications. It features 16.2 V minimum breakdown voltage (V_BR), 17.1 V rated standoff voltage (V_WM), clamps transients to ≤29.1 V at 51.5 A peak pulse current (I_PP), and delivers 1500 W peak pulse power (10/1000 µs). It is used for secondary lightning protection in avionics power rails and ESD/EFT hardening of MIL-STD-704-compliant systems.

For engineers reviewing the JAN1N5640A datasheet, JAN1N5640A pinout, JAN1N5640A application, or JAN1N5640A equivalent, this device requires attention to cathode-to-case polarity, hermetic DO-13 thermal derating (50 °C/W junction-to-lead), IEC 61000-4-2/4-4/4-5 compliance boundaries, and military qualification traceability per MIL-PRF-19500/500 Class JANTXV.

Technical Context

The JAN1N5640A operates as a unidirectional avalanche clamp with cathode tied to the metal case, enabling low-inductance grounding in high-surge environments. Its <100 ps response time and 0.090 %/°C temperature coefficient of V_BR ensure stable clamping across -55 °C to +175 °C operating range.

It is rated for 1500 W non-repetitive peak pulse power under 10/1000 µs waveform at T_L = 25 °C, with DC power dissipation limited to 1 W at lead temperature ≤125 °C. Forward surge capability supports 200 A (8.3 ms half-sine) - critical for inductive load switching protection in airborne power distribution units.

Key Specifications

Pinout & Package

Hermetically sealed DO-13 (DO-202AA) metal-glass package with axial leads; cathode terminal electrically connected to case and marked by diode symbol on body. Weight: 1.4 g. Tin-lead plating per MIL-STD-750 Method 2026.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar unidirectional TVS applications.

Compared with 1N5640A and JANTXV1N5639A, the JAN1N5640A provides the highest V_WM among JANTXV-rated 1N56xxA devices while maintaining full MIL-PRF-19500/500 compliance - making it optimal for 28 V aerospace bus protection where both voltage margin and qualification rigor are mandatory.

Availability

JAN1N5640A is available at Aetrix Electronics and suitable for aerospace power distribution, avionics ESD protection, and military vehicle electronics requiring stable component supply with full traceability and long-term obsolescence management.

Supply support for JAN1N5640A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi - now part of Microchip Technology - is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for defense, aerospace, and industrial markets.

The JAN1N5640A belongs to Microsemi's legacy military-qualified TVS diode family, engineered specifically for survivability in extreme electromagnetic environments including lightning strike coupling, ESD, and nuclear-hardened platforms.

FAQ

What is the standoff voltage (V_WM) of the JAN1N5640A?

The JAN1N5640A has a rated standoff voltage (V_WM) of 17.1 V, meaning it remains in high-impedance state below this reverse voltage while leaking ≤5 µA. This value is selected to exceed typical 28 V DC system nominal voltages by ≥20 %, ensuring reliable non-conduction during normal operation while allowing headroom for ripple and transients before clamping initiates. The V_WM is validated per MIL-PRF-19500/500 test conditions.

Is the JAN1N5640A pin-compatible with commercial 1N5640A?

Yes, the JAN1N5640A is physically and electrically pin-compatible with the commercial 1N5640A - both use identical DO-13 package, anode/cathode lead assignments, and share matching V_WM, V_BR, and V_C specifications. However, the JAN1N5640A undergoes full MIL-PRF-19500/500 screening (including burn-in, temperature cycling, and lot traceability), whereas the 1N5640A does not. No PCB layout change is needed when upgrading from 1N5640A to JAN1N5640A.

What is the maximum clamping voltage (V_C) of the JAN1N5640A under surge conditions?

The JAN1N5640A clamps to a maximum of 29.1 V when subjected to its rated 51.5 A peak pulse current (I_PP) under the standard 10/1000 µs waveform. This V_C value is measured at T_A = 25 °C and defines the upper voltage limit imposed on protected circuitry during worst-case surge events. It is guaranteed across the full military temperature range (-55 °C to +175 °C) per qualification testing.

Does the JAN1N5640A meet IEC 61000-4-5 for lightning surge immunity?

Yes, the JAN1N5640A is validated for secondary lightning protection per IEC 61000-4-5 with 42 Ω source impedance up to Class 4 (4 kV), and with 12 Ω and 2 Ω sources up to Class 3 and Class 2 respectively. Its 1500 W peak pulse rating and sub-100 ps response enable compliance when implemented with proper PCB layout - including short traces, direct chassis grounding of the cathode, and adequate copper pour area per Microsemi application guidance.

How is the cathode terminal configured on the JAN1N5640A?

The cathode terminal of the JAN1N5640A is electrically connected to the metal case and designated as Lead 1 per DO-13 mechanical drawings. It is marked on the body with a diode symbol and must be soldered to a low-impedance chassis ground plane to achieve specified clamping performance. This cathode-to-case configuration minimizes parasitic inductance and is essential for achieving the documented <100 ps response time and 29.1 V V_C.