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Microchip Technology JAN1N5645A
- Part No.:
- JAN1N5645A
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- DO-13
- Datasheet:
-
JAN1N5645A.pdf
- Description:
- TVS DIODE 28.2VWM 45.7VC DO202AA
- Quantity:
- Payment:
- Shipping:
Inventory:4,115
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Product details
Overview
JAN1N5645A from Microchip Technology is a hermetically sealed, unidirectional transient voltage suppressor (TVS) diode in DO-13 metal package, designed for high-reliability military avionics and aerospace systems. It features 29.7 V minimum breakdown voltage (VBR), 26.8 V rated standoff voltage (VWM), 47.7 V maximum clamping voltage (VC) at 31.5 A peak pulse current (IPP), and 1500 W peak pulse power rating at 10/1000 µs waveform.
For engineers reviewing the JAN1N5645A datasheet, JAN1N5645A pinout, JAN1N5645A application, or JAN1N5645A equivalent, this device serves as a radiation-hardened, fast-response (sub-100 ps) surge protector for IEC 61000-4-2 ESD, IEC 61000-4-4 EFT, and secondary lightning (IEC 61000-4-5 Class 4 with 42 Ω source) in harsh-environment analog signal paths and power rails.
Technical Context
The JAN1N5645A operates as a unidirectional avalanche diode, entering controlled breakdown above its 26.8 V standoff voltage to clamp transients while maintaining low leakage (<5 µA at VWM). Its hermetic DO-13 metal-glass package ensures stable thermal resistance (50 °C/W junction-to-lead) and operation across –55 °C to +175 °C.
It delivers 1500 W peak pulse power per JEDEC-standard 10/1000 µs waveform, with temperature coefficient of breakdown voltage at 0.098 %/°C - enabling predictable performance under thermal stress in airborne power distribution and sensor interface circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 26.8 V - Maximum continuous reverse operating voltage before conduction; sets minimum system rail margin for reliable non-conductive standby. |
| VBR @ IBR | 29.7–31.4 V @ 1 mA - Confirmed avalanche onset range; defines precise overvoltage trip threshold for precision protection design. |
| VC @ IPP | 47.7 V @ 31.5 A - Clamped voltage during worst-case 10/1000 µs surge; determines maximum stress on downstream ICs. |
| PPP | 1500 W - Peak pulse power handling capability; enables robust suppression of high-energy inductive switching transients. |
| Response Time | <100 ps - Near-instantaneous avalanche response; critical for preserving signal integrity in high-speed analog and RF front-ends. |
| Operating Temp | –55 °C to +175 °C - Full military temperature range support; validated for engine bay, flight control, and radar subsystems. |
| Radiation Hardness | Inherently radiation hard per Microsemi MicroNote 050 - No TID or SEE derating required in space-qualified or nuclear instrumentation designs. |
Pinout & Package
Package: DO-13 (DO-202AA), hermetically sealed metal-glass case with tin-lead plated leads; cathode connected to case and marked by diode symbol on body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient return path | Connected to protected circuit ground or low-side reference; must be routed with minimal inductance to preserve clamping speed. |
| Cathode | Protected line connection | Electrically tied to metal case; soldered directly to PCB ground plane or chassis for lowest possible clamping impedance. |
Key Features
| Feature | Design Value |
|---|---|
| Hermetic DO-13 metal package | Eliminates moisture ingress and long-term parameter drift; essential for 20+ year field life in sealed avionics enclosures. |
| 1500 W peak pulse power | Withstands repeated 10/1000 µs surges up to 0.01% duty cycle without degradation - suitable for engine controller ignition noise environments. |
| Sub-100 ps response time | Clamps ESD events before logic-level interfaces (e.g., RS-422, ARINC 429) experience latch-up or gate oxide damage. |
| JAN qualification per MIL-PRF-19500/500 | Guarantees screening for burn-in, thermal shock, and hermeticity - required for DoD and NASA flight hardware procurement. |
| 0.098 %/°C VBR tempco | Enables accurate clamping voltage prediction across full military temperature range - simplifies worst-case circuit analysis. |
Applications
| Avionics Power Distribution | Engine Control Unit (ECU) Sensors |
|---|---|
Use Scenario: Protecting 28 V DC bus inputs in flight management computers against load dump and relay bounce transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between bus rail and ground, acting as fast-acting shunt clamp during >100 V spikes. Use Value: Limits transient overshoot to ≤47.7 V, preventing damage to DC-DC converters and microcontrollers rated for 36 V absolute max. |
Use Scenario: Shielding thermocouple and pressure transducer analog outputs from ESD and ignition-induced RF coupling in turbine monitoring systems. IC Role / Device Role / Timing Role: Low-leakage (≤5 µA) standoff device that remains inert during normal 0–5 V signal swing but clamps nanosecond ESD events. Use Value: Preserves sub-mV measurement accuracy while meeting IEC 61000-4-2 ±15 kV contact discharge immunity requirements. |
| Military Radio Front-Ends | Spacecraft Payload Interfaces |
Use Scenario: Guarding HF/VHF receiver antenna ports against nearby lightning-induced surges and static discharge during ground handling. IC Role / Device Role / Timing Role: First-line defense in series with RF choke; absorbs energy before it reaches sensitive LNA input stages. Use Value: Sub-100 ps response prevents RF front-end saturation and desensitization during fast-rising transients per MIL-STD-461G CS115. |
Use Scenario: Safeguarding command/data lines between satellite bus and scientific instruments exposed to total ionizing dose (TID) and single-event effects. IC Role / Device Role / Timing Role: Radiation-hardened, hermetic TVS providing permanent surge immunity without parameter shift after 100 krad(Si) exposure. Use Value: Eliminates need for periodic recalibration or replacement due to radiation-induced leakage drift - verified per MicroNote 050. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N5645A | Same electrical specs, but JANTXV grade includes extended screening (e.g., 100% lot acceptance testing, enhanced burn-in) beyond JAN level. | Required for space-grade or mission-critical launch vehicle electronics where zero defect tolerance applies. | Select JANTXV1N5645A when full MIL-PRF-19500/500 Class V screening is mandated by program spec. |
| 1N5645A (commercial) | Identical VWM, VBR, VC, and package, but lacks MIL-PRF-19500/500 qualification and radiation hardness validation. | Suitable only for non-military industrial controls or test equipment where environmental ruggedness is secondary. | Choose 1N5645A only for cost-sensitive, non-certified prototypes or ground-support equipment with benign thermal/EMI conditions. |
Compared with JAN1N5645A, JANTXV1N5645A adds higher reliability screening for ultra-high-integrity systems, while 1N5645A omits military qualification entirely - making JAN1N5645A the optimal balance of certified ruggedness, radiation tolerance, and supply chain traceability for flight hardware.
Availability
JAN1N5645A is available at Aetrix Electronics and suitable for avionics power distribution, engine control unit (ECU) sensor protection, military radio front-ends, and spacecraft payload interfaces requiring stable component supply across extended product lifecycles.
Supply support for JAN1N5645A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology (formerly Microsemi) is a U.S.-based semiconductor manufacturer specializing in high-reliability analog, mixed-signal, and radiation-hardened components for aerospace, defense, and industrial markets.
The JAN1N5645A belongs to Microchip's legacy TVS diode family engineered specifically for military and space applications demanding hermetic packaging, guaranteed parametric stability, and compliance with MIL-PRF-19500/500.
FAQ
What is the standoff voltage (VWM) of the JAN1N5645A?
The JAN1N5645A has a rated standoff voltage (VWM) of 26.8 V, meaning it remains non-conductive up to this reverse voltage under normal operation. This value is selected to exceed typical 24 V or 28 V aircraft bus nominal voltages while allowing margin for ripple and transients - ensuring the JAN1N5645A does not conduct during steady-state conditions but activates reliably during overvoltage events.
Is the JAN1N5645A radiation hardened?
Yes, the JAN1N5645A is inherently radiation hard per Microsemi MicroNote 050, with no degradation in VBR, VC, or leakage current after exposure to total ionizing dose (TID) levels typical of low-Earth orbit missions. This radiation tolerance is built into the DO-13 metal-glass structure and silicon process - not added via external shielding - making the JAN1N5645A suitable for satellite bus and payload electronics without additional hardening.
What package type does the JAN1N5645A use?
The JAN1N5645A uses the DO-13 (also designated DO-202AA) hermetically sealed metal-glass package. This axial-leaded case features a welded metal body with glass insulator, tin-lead plated leads, and cathode connection to the case - delivering superior thermal conductivity (50 °C/W junction-to-lead), moisture immunity, and mechanical robustness versus plastic alternatives, as confirmed in the T4-LDS-0096 datasheet.
How does the JAN1N5645A compare to commercial 1N5645A in terms of qualification?
The JAN1N5645A is fully qualified to MIL-PRF-19500/500 for JAN-level military screening, including hermeticity testing, thermal cycling, and lot acceptance tests - whereas the commercial 1N5645A lacks any military qualification. Both share identical electrical parameters and DO-13 packaging, but only the JAN1N5645A carries traceable certification for use in DoD, NASA, and NATO procurement programs.
What is the maximum clamping voltage (VC) of the JAN1N5645A at its rated peak pulse current?
The JAN1N5645A exhibits a maximum clamping voltage (VC) of 47.7 V when subjected to its rated 31.5 A peak pulse current (IPP) under the standard 10/1000 µs waveform. This VC value defines the upper voltage limit imposed on protected circuitry during surge events - a critical parameter for ensuring downstream components like op-amps or ADCs remain within their absolute maximum ratings.
JAN1N5645A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- DO-13
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 28.2V
- Voltage - Breakdown (Min):
- 31.4V
- Voltage - Clamping (Max) @ Ipp:
- 45.7V
- Current - Peak Pulse (10/1000µs):
- 33A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/500
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-13 (DO-202AA)
JAN1N5645A FAQ
1.How can I place an order for JAN1N5645A through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N5645A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N5645A reliable?
The price and inventory of JAN1N5645A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N5645A is usually 5 days.
3.What payment methods are accepted for JAN1N5645A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N5645A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N5645A?
JAN1N5645A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N5645A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N5645A?
For technical support, including JAN1N5645A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N5645A requirements.
6.How does Aetrix verify that JAN1N5645A is sourced from the original manufacturer or authorized distributors?
All JAN1N5645A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N5645A meets industry standards.
7.What is the process for return or replacement of JAN1N5645A?
All JAN1N5645A units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N5645A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N5645A part is unused and in its original packaging.
Return procedure for JAN1N5645A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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