Microchip Technology JAN1N5649A

Overview

JAN1N5649A from Microchip Technology is a hermetically sealed, unidirectional transient voltage suppressor (TVS) diode in DO-13 metal package, designed for high-reliability aerospace and military systems. It provides 1500 W peak pulse power handling at 10/1000 µs, clamps transients below 67.8 V at 22.2 A peak pulse current, and operates across –55°C to +175°C. It is commonly deployed in avionics power rail protection against secondary lightning surges per IEC61000-4-5 with 42 Ω source impedance (Class 4).

For engineers reviewing the JAN1N5649A datasheet, JAN1N5649A pinout, JAN1N5649A application, or JAN1N5649A equivalent, key selection criteria include standoff voltage (38.1 V), clamping voltage (67.8 V), breakdown voltage range (42.3–44.7 V), hermetic DO-13 packaging, and MIL-PRF-19500/500 JANTXV qualification.

Technical Context

The JAN1N5649A functions as a unidirectional avalanche diode, entering controlled breakdown when reverse voltage exceeds its V(BR) threshold (42.3–44.7 V @ 1 mA), limiting transient energy by clamping to ≤67.8 V at 22.2 A. Its response time is under 100 ps, enabling effective suppression of ESD (IEC61000-4-2), EFT (IEC61000-4-4), and induced RF transients.

Thermal design relies on low junction-to-lead thermal resistance (50°C/W) and operation within –55°C to +175°C ambient range. The cathode is internally connected to the metal case, requiring proper grounding in PCB layout; polarity is marked via diode symbol on the body.

Key Specifications

Pinout & Package

Package: DO-13 (DO-202AA), hermetically sealed metal-glass case with cathode connected to case and polarity indicated by molded diode symbol. Tin-lead plated leads meet MIL-STD-750 Method 2026.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with JAN1N5649A, the 1N5649A offers identical electrical performance at lower cost but lacks military screening, while JANTXV1N5648A provides tighter clamping for 24 V systems-neither is pin-compatible due to different VWM/VBR ranges, requiring verification of system voltage margins.

Availability

JAN1N5649A is available at Aetrix Electronics and suitable for avionics power distribution, ground vehicle engine control, military communications radios, and satellite power conditioning requiring stable component supply across extended temperature and radiation environments.

Supply support for JAN1N5649A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology (formerly Microsemi) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and radiation-hardened components for aerospace, defense, and industrial markets.

The JAN1N5649A belongs to Microchip's legacy military-qualified TVS diode family, engineered specifically for survivability in mission-critical systems exposed to lightning, ESD, and harsh environmental stressors.

FAQ

What is the standoff voltage (VWM) of the JAN1N5649A and why does it matter?

The JAN1N5649A has a rated standoff voltage (VWM) of 38.1 V, meaning it remains nonconductive under continuous reverse bias up to this level while drawing ≤5 µA leakage current. This value ensures compatibility with nominal 28 V DC systems-such as aircraft power buses-where transient suppression must not interfere with normal operation. Selecting a VWM too close to operating voltage risks false triggering; the 38.1 V rating provides a safe margin above 28 V while enabling effective clamping during surges.

How does the JAN1N5649A differ from commercial-grade 1N5649A?

The JAN1N5649A is the JANTXV-qualified variant of the 1N5649A, featuring full MIL-PRF-19500/500 screening-including extended temperature testing, lot traceability, and radiation hardness validation per MicroNote 050. Electrically, both share identical VWM (38.1 V), V_BR (42.3–44.7 V), and V_C (67.8 V), but only JAN1N5649A meets Class V military requirements for deployment in certified avionics and defense platforms.

Can JAN1N5649A be used for bidirectional transient protection?

No, JAN1N5649A is strictly unidirectional-it conducts only in forward bias and clamps reverse transients. For bidirectional protection in the same DO-13 package, Microchip specifies the 1N6036–1N6072A series. Using JAN1N5649A in bidirectional configurations risks failure during positive-going transients, as it lacks symmetrical avalanche capability. Always verify polarity alignment in schematic and layout.

What is the thermal resistance and how does it affect PCB layout for JAN1N5649A?

JAN1N5649A has a junction-to-lead thermal resistance of 50°C/W when measured at 10 mm from the case, and 110°C/W junction-to-ambient on FR4 with 4 mm² copper pads. To maintain reliability under repeated surges, PCB layout must maximize copper area connected to the cathode (case) and minimize trace length to ground plane. Avoid narrow traces between the device and chassis ground, and ensure solder fillets fully wet both leads per MIL-STD-750.

Does JAN1N5649A comply with IEC61000-4-5, and which test classes does it support?

Yes, JAN1N5649A is validated for IEC61000-4-5 secondary lightning immunity: it meets Class 4 with 42 Ω source impedance (up to 1 kV surge), Class 3 with 12 Ω (up to 2 kV), and Class 2 with 2 Ω (up to 4 kV). Its 1500 W peak pulse rating and 67.8 V clamping voltage ensure protected circuits remain within safe operating limits during standardized surge waveforms, making it suitable for MIL-STD-461G CS117 compliance testing.