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Microchip Technology JAN1N5651A

Part No.:
JAN1N5651A
Manufacturer:
Microchip Technology
Category:
TVS Diodes
Package:
DO-202AA, DO-13, Axial
Datasheet:
AetrixJAN1N5651A.pdf
Description:
TVS DIODE 47.8VWM 77VC DO13
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,157

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Product details

Overview

JAN1N5651A from Microsemi (now Microchip) is a hermetically sealed, unidirectional transient voltage suppressor diode in a DO-13 metal package, designed for high-reliability aerospace and military applications. It features a 45.4 V rated standoff voltage (VWM), 50.4–53.2 V breakdown voltage (V(BR)), 80.5 V maximum clamping voltage (VC) at 18.6 A peak pulse current, and 1500 W peak pulse power rating per 10/1000 µs waveform - used to protect avionics power rails and signal lines from lightning-induced surges and ESD.

For engineers reviewing the JAN1N5651A datasheet, JAN1N5651A pinout, JAN1N5651A application, or JAN1N5651A equivalent, this part serves as a MIL-PRF-19500/500 qualified TVS for secondary lightning protection (IEC61000-4-5, 12 Ω source, Class 2), EFT/ESD suppression (IEC61000-4-4/-2), and inductive switching transient clamping in harsh-environment systems requiring radiation hardness and -55°C to +175°C operation.

Technical Context

The JAN1N5651A operates as an avalanche-mode unidirectional TVS diode with cathode tied to case, enabling low-inductance mounting directly to chassis ground. Its hermetic DO-13 package ensures long-term reliability under thermal cycling and humidity exposure typical in airborne systems.

It delivers sub-100 ps response time and clamps transients within its specified VC limit while sustaining 1500 W non-repetitive surge energy. The device exhibits a +0.103 %/°C temperature coefficient of V(BR), supporting stable breakdown behavior across its full operating temperature range.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 45.4 V - maximum continuous reverse voltage before leakage exceeds 5 µA; sets minimum system operating voltage margin.
V(BR) @ I(BR) 50.4–53.2 V @ 1 mA - guaranteed avalanche initiation range; defines precise overvoltage trip threshold.
VC @ IPP 80.5 V @ 18.6 A - peak clamped voltage during 10/1000 µs surge; determines worst-case stress on downstream circuitry.
PPP 1500 W - peak pulse power handling capability; enables protection against IEC61000-4-5 Class 2 surges (12 Ω source).
Operating Temp -55°C to +175°C - supports deployment in engine bays, radar modules, and space-qualified electronics without derating.
Package DO-13 (DO-202AA) - hermetically sealed metal-glass case with cathode-to-case polarity; enables direct chassis grounding and radiation hardness.
αV(BR) +0.103 %/°C - predictable positive drift of breakdown voltage with temperature; simplifies thermal design margining.

Pinout & Package

DO-13 (DO-202AA) hermetically sealed metal-glass package with axial leads; cathode terminal electrically connected to case and marked by diode symbol on body. Mounting requires 0.375" (10 mm) lead length from body for thermal resistance specification (50°C/W junction-to-lead).

Pin/Terminal Circuit Role Design Meaning
Anode (Lead 2) Transient current entry point Connected to protected line; conducts surge current into cathode/case during avalanche.
Cathode (Lead 1 / Case) Clamping reference & return path Internally bonded to metal case; must be soldered to low-impedance ground plane or chassis for optimal ESD/lightning performance.

Key Features

Feature Design Value
Hermetic DO-13 packaging Enables operation in vacuum, high-humidity, and corrosive environments without parameter drift or failure.
MIL-PRF-19500/500 qualification (JAN level) Guarantees screening for burn-in, temperature cycling, and mechanical shock per military standards.
1500 W peak pulse power (10/1000 µs) Provides robust protection against induced lightning surges up to IEC61000-4-5 Class 2 (12 Ω source).
<100 ps response time Clamps ESD events (IEC61000-4-2) before sensitive ICs experience damaging voltage overshoot.
Inherent radiation hardness Validated per MicroNote 050; suitable for avionics and satellite subsystems without additional shielding.

Applications

Aerospace Power Distribution Avionics Signal Line Protection

Use Scenario: Protecting 28 V DC bus feeders in aircraft electrical systems from load dump and lightning-induced transients.

IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between bus and chassis ground to shunt surge energy before it reaches bus converters and controllers.

Use Value: Maintains system uptime by preventing latch-up or destruction of upstream DC/DC modules during secondary lightning events (IEC61000-4-5, 12 Ω source, Class 2).

Use Scenario: Shielding ARINC 429 data lines from ESD and RF-induced transients in flight control computers.

IC Role / Device Role / Timing Role: Low-capacitance transient suppressor mounted at connector interface to divert fast-rising EFT/ESD pulses (<100 ps) away from receiver inputs.

Use Value: Preserves bit-error rate integrity by limiting voltage excursion to <80.5 V during 15 kV contact discharge (IEC61000-4-2 Level 4).

Military Vehicle Electronics Satellite Power Conditioning

Use Scenario: Safeguarding 270 V DC distribution in armored vehicle command systems against EMP-like switching transients.

IC Role / Device Role / Timing Role: High-energy TVS installed at power entry point to absorb 1500 W surges without degradation across -55°C to +125°C ambient.

Use Value: Ensures mission-critical continuity by surviving repeated 8.3 ms half-sine forward surge currents up to 200 A (per MIL-STD-1275B).

Use Scenario: Clamping transients on solar array regulator inputs exposed to deep-space radiation and thermal cycling.

IC Role / Device Role / Timing Role: Radiation-hardened, hermetic TVS providing permanent overvoltage protection without parameter shift over 15+ year orbital life.

Use Value: Eliminates need for periodic recalibration or replacement due to inherent radiation tolerance (MicroNote 050 verified) and hermetic seal integrity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
JANTXV1N5651A Higher screening level (JANTXV vs JAN); tighter parametric limits and extended environmental testing per MIL-PRF-19500/500. Required for Class H (high-reliability) space or nuclear-qualified programs where burn-in and lot acceptance testing are mandated. Select when full JANTXV qualification - including radiation lot acceptance tests - is contractually required.
1N5651A (commercial) No military screening; same electrical specs but not tested to MIL-PRF-19500/500; plastic-packaged variants available. Suitable for ground-based industrial controls or non-safety-critical test equipment where cost and availability outweigh qualification needs. Choose for prototyping or commercial derivatives where MIL-spec traceability is unnecessary.

Compared with JANTXV1N5651A, the JAN1N5651A offers reduced screening rigor but retains identical electrical performance and hermetic packaging; versus 1N5651A, it provides assured military-grade reliability and radiation hardness - critical for flight-critical avionics where field failure is unacceptable.

Availability

JAN1N5651A is available at Aetrix Electronics and suitable for aerospace power distribution, avionics signal line protection, and military vehicle electronics requiring stable component supply with full traceability and long-lifecycle support.

Supply support for JAN1N5651A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi - now part of Microchip Technology - is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.

The JAN1N5651A belongs to Microsemi's legacy military-qualified TVS diode family, engineered specifically for survivability in extreme electromagnetic and thermal environments encountered in airborne and spaceborne platforms.

FAQ

What is the standoff voltage (VWM) of the JAN1N5651A, and why is it critical for circuit protection?

The JAN1N5651A has a rated standoff voltage (VWM) of 45.4 V, meaning it remains non-conductive below this reverse voltage while drawing less than 5 µA leakage current. This value must exceed the system's maximum continuous operating voltage to prevent false triggering during normal operation - for example, in a 28 V aircraft bus, the 45.4 V VWM provides sufficient margin above transients like load dump spikes. Selecting a VWM too close to operating voltage risks premature conduction and accelerated wear.

How does the hermetic DO-13 package of the JAN1N5651A improve reliability over plastic TVS diodes?

The JAN1N5651A's hermetically sealed DO-13 metal-glass package prevents moisture ingress, ion migration, and outgassing - critical for long-term stability in high-humidity or vacuum environments such as aircraft cabins or satellite payloads. Unlike plastic-packaged equivalents, it maintains consistent V(BR) and leakage performance after thermal cycling from -55°C to +175°C and resists corrosion in salt fog or chemical exposure, making it suitable for MIL-PRF-19500/500-compliant designs.

Can the JAN1N5651A be used for bidirectional transient suppression?

No - the JAN1N5651A is a unidirectional TVS diode, with cathode tied to case and designed only for reverse-biased clamping. It does not suppress positive transients on the anode side relative to cathode. For bidirectional protection in the same DO-13 footprint, Microsemi specifies the separate 1N6036–1N6072A series. Using JAN1N5651A in bidirectional configurations risks failure during positive-going surges.

What IEC standards does the JAN1N5651A meet for surge and ESD protection?

The JAN1N5651A meets IEC61000-4-2 (ESD immunity up to ±15 kV contact), IEC61000-4-4 (EFT/burst immunity), and IEC61000-4-5 (surge immunity) for secondary lightning events - specifically Class 2 with 12 Ω source impedance per the datasheet's application table. Its <100 ps response time and 80.5 V clamping voltage ensure compliance without external filtering, provided layout minimizes trace inductance between the device and protected node.

Is the JAN1N5651A radiation-hardened, and what documentation supports this claim?

Yes - the JAN1N5651A is inherently radiation-hardened per Microsemi MicroNote 050, a publicly documented application note validating total ionizing dose (TID) tolerance and single-event effect (SEE) immunity for this TVS family. This radiation hardness stems from its silicon process and hermetic packaging, not post-fabrication hardening, and is confirmed across the entire 1N5629–1N5665A series including JAN1N5651A.

JAN1N5651A Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Package/Case:
DO-202AA, DO-13, Axial
Series:
-
Packaging:
Bulk
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
47.8V
Voltage - Breakdown (Min):
53.2V
Voltage - Clamping (Max) @ Ipp:
77V
Current - Peak Pulse (10/1000µs):
19.5A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
Military
Qualification:
MIL-PRF-19500/500
Mounting Type:
Through Hole
Supplier Device Package:
DO-13 (DO-202AA)

JAN1N5651A FAQ

1.How can I place an order for JAN1N5651A through Aetrix?

Please submit a Request for Quotation (RFQ) for JAN1N5651A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JAN1N5651A reliable?

The price and inventory of JAN1N5651A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N5651A is usually 5 days.

3.What payment methods are accepted for JAN1N5651A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N5651A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for JAN1N5651A?

JAN1N5651A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JAN1N5651A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JAN1N5651A?

For technical support, including JAN1N5651A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N5651A requirements.

6.How does Aetrix verify that JAN1N5651A is sourced from the original manufacturer or authorized distributors?

All JAN1N5651A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N5651A meets industry standards.

7.What is the process for return or replacement of JAN1N5651A?

All JAN1N5651A units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N5651A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JAN1N5651A part is unused and in its original packaging.

Return procedure for JAN1N5651A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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