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Microchip Technology JAN1N5655A
- Part No.:
- JAN1N5655A
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- DO-202AA, DO-13, Axial
- Datasheet:
-
JAN1N5655A.pdf
- Description:
- TVS DIODE 70.1VWM 113VC DO13
- Quantity:
- Payment:
- Shipping:
Inventory:4,726
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Product details
Overview
JAN1N5655A from Microchip Technology (formerly Microsemi) is a hermetically sealed, unidirectional transient voltage suppressor (TVS) diode in a DO-13 metal package, designed for high-reliability aerospace and military applications. It features a 66.4 V rated standoff voltage (VWM), 73.8–77.9 V breakdown voltage (V(BR)) at 1 mA, and clamps transients to ≤118 V at 12.7 A peak pulse current (IPP), delivering 1500 W peak pulse power per 10/1000 µs waveform.
For engineers reviewing the JAN1N5655A datasheet, JAN1N5655A pinout, JAN1N5655A application, or JAN1N5655A equivalent, this device is selected for secondary lightning protection (IEC61000-4-5 Class 3 with 2 Ω source impedance), ESD/EFT hardening per IEC61000-4-2/-4-4, and inductive switching surge suppression in avionics power rails and signal interfaces where hermetic sealing and radiation hardness are mandatory.
Technical Context
The JAN1N5655A operates as a unidirectional avalanche-clamping TVS diode, leveraging silicon junction physics to enter controlled reverse breakdown within <100 ps of transient onset. Its DO-13 metal-glass hermetic package ensures zero moisture ingress and stable electrical performance across -55°C to +175°C operating temperature range.
It is qualified to MIL-PRF-19500/500 under JAN level, with tighter parametric tolerances than commercial 1N5655A variants. The cathode is internally bonded to the case, establishing a fixed polarity reference critical for grounding integrity in flight-critical systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Rated Standoff Voltage) | 66.4 V - Maximum continuous reverse voltage before leakage exceeds 5 µA; sets minimum system rail voltage compatibility. |
| V(BR) @ I(BR) | 73.8–77.9 V @ 1 mA - Confirmed avalanche initiation range; defines minimum clamping threshold under transient stress. |
| VC @ IPP | 118 V @ 12.7 A - Maximum clamped voltage during 10/1000 µs surge; determines protected circuit's maximum overvoltage exposure. |
| PPP (Peak Pulse Power) | 1500 W - Sustained for single 10/1000 µs event at TL = 25°C; enables robust protection against MIL-STD-461E CS115 or IEC61000-4-5 Level 3 surges. |
| Response Time | <100 ps - Enables effective suppression of ESD (IEC61000-4-2 ±8 kV contact) and fast EFT bursts (IEC61000-4-4). |
| Operating Temp Range | -55°C to +175°C - Validated for engine bay, radar transmitter, and satellite bus environments without derating. |
| Package | DO-13 (DO-202AA) - Hermetically sealed metal-glass case with tin-lead plating; meets MIL-STD-750 solderability requirements. |
Pinout & Package
DO-13 (DO-202AA) hermetically sealed metal-glass package with axial leads; cathode terminal electrically connected to case and marked by diode symbol on body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 2) | Transient current entry point | Connected to protected line; must be routed with minimal inductance to preserve sub-100 ps response. |
| Cathode (Lead 1 / Case) | Clamp return path | Internally bonded to metal case; requires low-impedance chassis ground connection to achieve specified VC. |
Key Features
| Feature | Design Value |
|---|---|
| Hermetic DO-13 metal package | Zero moisture permeability and no parameter drift over 20+ year shelf life; essential for long-duration space missions. |
| JAN-level military qualification | Fully compliant with MIL-PRF-19500/500; includes lot traceability, extended temperature screening, and radiation hardness per MicroNote 050. |
| 1500 W peak pulse power | Supports repeated 10/1000 µs surges up to 139 VPP at 42 Ω source impedance (IEC61000-4-5 Class 1), validated per Figure 1 derating curve. |
| Sub-100 ps response time | Enables clamping before ESD or EFT energy couples into downstream ICs; eliminates need for additional RC filtering on sensitive analog inputs. |
| Cathode-to-case bonding | Provides intrinsic low-inductance ground path; reduces clamping overshoot by eliminating bond wire inductance typical in plastic-packaged TVS devices. |
Applications
| Avionics Power Bus Protection | Radar Transmitter Interface |
|---|---|
Use Scenario: Protecting 28 V DC aircraft power distribution networks from load dump and inductive kickback during relay switching. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between bus rail and chassis ground to shunt >100 A surge currents within 100 ps. Use Value: Prevents latch-up or burnout in MIL-STD-1275B-compliant DC-DC converters by limiting bus overvoltage to ≤118 V during 1500 W transients. |
Use Scenario: Shielding RF amplifier control lines from coupling-induced transients during high-power pulse transmission. IC Role / Device Role / Timing Role: Fast-response TVS mounted directly at connector interface to suppress coupled RF energy before it reaches FPGA GPIO or DAC reference pins. Use Value: Maintains signal integrity in MIL-STD-461G RS103 testing by clamping induced 30 V/m fields to sub-120 V peaks without adding capacitance that degrades GHz bandwidth. |
| Satellite Command & Data Handling | Tactical Radio Front-End |
Use Scenario: Hardening CAN and MIL-STD-1553B data lines on LEO satellite platforms exposed to single-event effects and launch vibration-induced arcing. IC Role / Device Role / Timing Role: Radiation-hardened TVS placed inline with differential bus pairs to absorb ESD events while preserving common-mode rejection. Use Value: Ensures uninterrupted telemetry during ±15 kV HBM ESD events per MicroNote 050 validation, with no parameter shift after 100 krad(Si) TID exposure. |
Use Scenario: Protecting HF/VHF receiver front-end amplifiers from antenna-coupled lightning-induced surges in field-deployable radios. IC Role / Device Role / Timing Role: Primary surge arrestor mounted at SMA connector feedthrough to divert 12.7 A transients before reaching GaAs FET input stage. Use Value: Achieves IEC61000-4-5 Level 3 compliance (1 kV/2 Ω) without sacrificing noise figure, thanks to DO-13's low parasitic inductance (<0.5 nH). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N5655A | Higher qualification level (JANTXV vs JAN); includes extended temperature screening (-55°C to +175°C) and 100% lot testing per MIL-PRF-19500/500. | Required for mission-critical flight hardware where failure modes demand full JANTXV traceability and radiation test reports. | Select JANTXV1N5655A when program specifications mandate JANTXV-level documentation and radiation test data. |
| 1N5655A (commercial) | No military qualification; wider V(BR) tolerance (73.8–86.5 V vs 73.8–77.9 V); not hermetically sealed; plastic DO-15 package. | Suitable only for non-safety-critical industrial controls or lab prototypes where cost and availability outweigh reliability requirements. | Use 1N5655A only for bench validation or non-flight hardware; never substitute in certified avionics without requalification. |
Compared with JANTXV1N5655A, the JAN1N5655A offers identical electrical specs but reduced test coverage and documentation rigor; compared with 1N5655A, it provides hermeticity, tighter V(BR) tolerance, and guaranteed radiation hardness-making it the minimum-qualified choice for flight-qualified subsystems.
Availability
JAN1N5655A is available at Aetrix Electronics and suitable for avionics power bus protection, radar transmitter interface hardening, satellite command & data handling, and tactical radio front-end surge suppression requiring stable component supply across extended product lifecycles.
Supply support for JAN1N5655A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology acquired Microsemi in 2018 and maintains its high-reliability analog and discrete product portfolio, including radiation-hardened and military-qualified components for aerospace, defense, and industrial markets.
The JAN1N5655A belongs to Microchip's legacy TVS diode family originally developed by Microsemi for MIL-PRF-19500/500 compliance; it targets applications demanding hermetic packaging, extreme temperature resilience, and proven radiation tolerance in safety-critical systems.
FAQ
What is the maximum clamping voltage of the JAN1N5655A under a 10/1000 µs surge?
The JAN1N5655A clamps to a maximum of 118 V when subjected to its rated 12.7 A peak pulse current (IPP) under a 10/1000 µs waveform. This value is measured at 25°C lead temperature and defines the highest voltage the protected circuit will experience during a standardized surge event. The JAN1N5655A achieves this clamping performance while maintaining 1500 W peak pulse power capability and sub-100 ps response time.
Is the JAN1N5655A hermetically sealed, and why does that matter?
Yes, the JAN1N5655A uses a DO-13 (DO-202AA) hermetically sealed metal-glass package. This construction prevents moisture ingress and eliminates parameter drift over decades, which is critical for aerospace and defense systems with multi-year storage or mission durations. Hermeticity also ensures stable V(BR) and VC performance across thermal cycling and high-humidity environments where plastic-packaged alternatives would degrade. The JAN1N5655A's seal is verified per MIL-STD-750 Method 1071.
How does the JAN1N5655A differ from the commercial 1N5655A part?
The JAN1N5655A differs from the commercial 1N5655A in three key ways: it is qualified to MIL-PRF-19500/500 at JAN level, uses a hermetically sealed DO-13 metal package (vs plastic DO-15), and has tighter V(BR) tolerance (73.8–77.9 V vs 73.8–86.5 V). These differences make the JAN1N5655A suitable for flight hardware and radiation-exposed environments, whereas the 1N5655A is restricted to non-safety-critical industrial use. Both share identical electrical ratings at 25°C, but only the JAN1N5655A guarantees performance across -55°C to +175°C.
Can the JAN1N5655A be used for IEC61000-4-5 secondary lightning protection?
Yes, the JAN1N5655A is explicitly rated for IEC61000-4-5 secondary lightning protection: it supports Class 3 with 2 Ω source impedance, Class 3 with 12 Ω, and Class 4 with 42 Ω per the manufacturer's technical data sheet. Its 1500 W peak pulse power and 118 V clamping voltage enable compliance with these test levels when properly mounted with low-inductance grounding. The JAN1N5655A's hermetic DO-13 package further ensures consistent performance across repeated surges without degradation.
What is the polarity configuration and mounting requirement for the JAN1N5655A?
The JAN1N5655A is a unidirectional TVS diode with cathode (marked by diode symbol on the case) internally bonded to the metal package. Lead 1 (cathode) must be connected to chassis ground, and Lead 2 (anode) to the protected line. This configuration requires a low-inductance, wide copper pour ground plane beneath the case to minimize clamping overshoot. Mounting must maintain ≥0.375 inch (10 mm) lead length from body to PCB pad to meet thermal resistance spec of 50°C/W junction-to-lead.
JAN1N5655A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- DO-202AA, DO-13, Axial
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 70.1V
- Voltage - Breakdown (Min):
- 77.9V
- Voltage - Clamping (Max) @ Ipp:
- 113V
- Current - Peak Pulse (10/1000µs):
- 13.3A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/500
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-13 (DO-202AA)
JAN1N5655A FAQ
1.How can I place an order for JAN1N5655A through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N5655A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N5655A reliable?
The price and inventory of JAN1N5655A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N5655A is usually 5 days.
3.What payment methods are accepted for JAN1N5655A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N5655A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N5655A?
JAN1N5655A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N5655A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N5655A?
For technical support, including JAN1N5655A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N5655A requirements.
6.How does Aetrix verify that JAN1N5655A is sourced from the original manufacturer or authorized distributors?
All JAN1N5655A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N5655A meets industry standards.
7.What is the process for return or replacement of JAN1N5655A?
All JAN1N5655A units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N5655A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N5655A part is unused and in its original packaging.
Return procedure for JAN1N5655A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N5655A Tags
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