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Microchip Technology JAN1N5660A
- Part No.:
- JAN1N5660A
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- DO-202AA, DO-13, Axial
- Datasheet:
-
JAN1N5660A.pdf
- Description:
- TVS DIODE 111VWM 179VC DO13
- Quantity:
- Payment:
- Shipping:
Inventory:2,386
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Product details
Overview
JAN1N5660A from Microchip Technology is a hermetically sealed, unidirectional Transient Voltage Suppressor (TVS) diode in DO-13 metal package, designed for high-reliability military avionics and aerospace systems. It features 111 V rated standoff voltage (VWM), 132 V maximum clamping voltage (VC) at 179 A peak pulse current (IPP), and 1500 W peak pulse power rating per 10/1000 µs waveform - enabling robust protection against secondary lightning surges (IEC61000-4-5, 42 Ω source) and ESD/EFT events (IEC61000-4-2/-4-4).
For engineers reviewing the JAN1N5660A datasheet, JAN1N5660A pinout, JAN1N5660A application, or JAN1N5660A equivalent, this part delivers verified military-grade transient suppression with sub-100 ps response time, hermetic DO-13 packaging for harsh-environment reliability, and precise 111 V standoff voltage targeting 100 V nominal DC bus protection in airborne power distribution and signal interface circuits.
Technical Context
The JAN1N5660A operates as a unidirectional avalanche diode, triggered when reverse voltage exceeds its 124 V minimum breakdown voltage (V(BR)) at 1 mA test current. Its clamping action limits transients to ≤132 V under 179 A 10/1000 µs surge, with thermal resistance of 50 °C/W junction-to-lead and operating temperature range from –55 °C to +175 °C.
It is qualified to MIL-PRF-19500/500 as a JAN-level device, featuring tin-lead plating per MIL-STD-750 Method 2026, cathode-connected-to-case polarity, and hermetic metal-glass DO-13 (DO-202AA) construction - distinguishing it from commercial 1N5660A variants by tighter parametric tolerances and extended environmental validation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 111 V - Standoff voltage ensures non-conduction during normal 100 V DC bus operation while allowing margin for ripple and tolerance. |
| V(BR) min/max | 124 V / 132 V @ 1 mA - Confirmed avalanche onset range defines reliable triggering threshold under transient overvoltage. |
| VC @ IPP | 132 V @ 179 A - Maximum clamped voltage during full 1500 W surge, limiting downstream circuit stress to safe levels. |
| PPP | 1500 W @ 10/1000 µs - Sustains high-energy transients common in aircraft power switching and induced lightning coupling. |
| Response time | <100 ps - Enables effective suppression of ESD (IEC61000-4-2) and fast EFT bursts without signal distortion. |
| Operating temp | –55 °C to +175 °C - Supports deployment in engine-mounted electronics, flight control actuators, and radar power supplies. |
| Package | DO-13 (DO-202AA) - Hermetic metal-glass case provides moisture resistance, radiation hardness, and mechanical ruggedness for aerospace use. |
Pinout & Package
DO-13 (DO-202AA) hermetically sealed metal-glass package with axial leads; cathode terminal electrically connected to case and marked by diode symbol on body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 2) | Transient current entry point | Connected to protected line; carries full surge current into avalanche region during clamping. |
| Cathode (Lead 1) | Transient current return path | Internally bonded to metal case; must be tied to system ground plane for low-inductance surge dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| Hermetic DO-13 metal package | Prevents moisture ingress and corrosion in high-humidity, salt-fog, or vacuum environments typical of aviation systems. |
| JAN qualification per MIL-PRF-19500/500 | Validated parametric stability across temperature, shock, vibration, and radiation exposure for mission-critical hardware. |
| 1500 W peak pulse power | Handles IEC61000-4-5 Class 1–4 secondary lightning surges up to 42 Ω source impedance without degradation. |
| Sub-100 ps response time | Clamps ESD events before logic thresholds are violated, protecting FPGAs, ADCs, and serial interface ICs. |
| Cathode-to-case connection | Enables low-inductance mounting directly to chassis ground, minimizing clamping voltage overshoot during fast transients. |
Applications
| Aircraft Power Distribution | Avionics Signal Interface |
|---|---|
Use Scenario: Protecting 100 V DC bus lines in airborne electrical power systems from inductive switching spikes and secondary lightning-induced surges. IC Role / Device Role / Timing Role: Unidirectional TVS diode providing primary overvoltage clamping at bus entry points and load interfaces. Use Value: Limits transient voltage to ≤132 V during 179 A surges, preventing MOSFET gate oxide rupture and DC-DC converter latch-up. |
Use Scenario: Safeguarding ARINC 429 or MIL-STD-1553B data lines against ESD and RF-induced transients in flight control computers. IC Role / Device Role / Timing Role: Fast-response transient suppressor placed at connector entry to shunt energy before reaching receiver input stages. Use Value: Sub-100 ps response ensures clamping occurs within first nanosecond of ESD event, preserving signal integrity and bit error rate. |
| Engine Control Unit (ECU) | Radar Power Supply |
Use Scenario: Shielding fuel pump drivers and sensor excitation circuits in turbine engine controllers exposed to high-temperature transients. IC Role / Device Role / Timing Role: High-temp-rated TVS absorbing inductive kickback from solenoid drivers and ignition coils. Use Value: Stable operation up to +175 °C ambient enables direct placement near heat sources without derating or thermal runaway. |
Use Scenario: Clamping voltage surges on high-voltage radar transmitter power rails caused by arc-back or switching transients. IC Role / Device Role / Timing Role: 1500 W-rated suppressor absorbing multi-millisecond energy bursts without thermal failure. Use Value: Hermetic DO-13 package withstands thermal cycling and outgassing in vacuum-sealed radar modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N5660A | Higher screening level (JANTXV vs JAN); tighter V(BR) tolerance (±5% vs ±10%), lower αV(BR) (0.107%/°C vs unspecified for JAN). | Required for space-grade or nuclear-hardened systems where parametric drift under radiation must be minimized. | Select JANTXV1N5660A when radiation hardness per MicroNote 050 and extended life testing are mandated. |
| 1N5660A (commercial) | No MIL-PRF-19500 qualification; wider V(BR) tolerance (124–132 V vs 124–132 V same, but no screening); not hermetically sealed. | Suitable for ground-based industrial controls or lab equipment where cost and availability outweigh environmental rigor. | Choose 1N5660A only for non-mission-critical prototypes or cost-sensitive production where DO-13 form factor is retained but military specs are waived. |
Compared with JANTXV1N5660A, the JAN1N5660A offers reduced screening overhead and lower cost while maintaining full DO-13 hermeticity and –55 °C to +175 °C operation; versus commercial 1N5660A, it guarantees traceable lot control, radiation hardness, and validated surge endurance for flight-certified hardware.
Availability
JAN1N5660A is available at Aetrix Electronics and suitable for aircraft power distribution, avionics signal interface, and engine control unit designs requiring stable component supply under ITAR-controlled logistics and long-lifecycle support.
Supply support for JAN1N5660A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology acquired Microsemi in 2018 and now manages its high-reliability analog and discrete portfolio, including military-qualified TVS diodes.
The JAN1N5660A belongs to Microchip's legacy Microsemi TVS family engineered specifically for aerospace, defense, and high-temperature industrial applications demanding hermetic sealing and MIL-spec compliance.
FAQ
What is the standoff voltage (VWM) of the JAN1N5660A and how does it relate to system design?
The JAN1N5660A has a rated standoff voltage (VWM) of 111 V, meaning it remains non-conductive below this reverse voltage. This value is selected to exceed typical 100 V DC bus operating voltages while providing margin for ripple, tolerance, and temperature drift - ensuring reliable blocking during normal operation while enabling fast avalanche conduction during transients. System designers must verify that continuous operating voltage never exceeds 111 V to prevent premature wear or leakage increase.
Is the JAN1N5660A pin-compatible with commercial 1N5660A devices?
Yes, the JAN1N5660A uses the identical DO-13 (DO-202AA) package and pinout as the commercial 1N5660A, with anode and cathode leads arranged axially and cathode connected to the metal case. However, substitution requires verification of mechanical mounting compatibility, thermal interface design, and qualification documentation - since JAN1N5660A includes military screening, hermetic sealing, and traceable lot data not present in commercial versions.
What surge standards does the JAN1N5660A meet for lightning protection?
The JAN1N5660A meets IEC61000-4-5 secondary lightning protection requirements across multiple classes: Class 1–4 with 42 Ω source impedance, Class 1–3 with 12 Ω, and Class 2–3 with 2 Ω. Its 1500 W peak pulse power rating and 132 V clamping voltage at 179 A ensure compliance when applied with appropriate PCB layout (short traces, low-inductance grounding) and system-level coordination with upstream fusing or current-limiting elements.
How does the hermetic DO-13 package benefit JAN1N5660A in aerospace applications?
The hermetic DO-13 metal-glass package of the JAN1N5660A prevents moisture ingress, eliminates internal corrosion, and maintains parameter stability under extreme thermal cycling, vacuum, and radiation exposure - critical for avionics deployed in unpressurized bays or near jet engines. Unlike plastic-packaged alternatives, it avoids outgassing and delamination risks, supporting DO-13's use in MIL-STD-883-tested assemblies and flight-critical subsystems.
What is the maximum clamping voltage (VC) of the JAN1N5660A and why is it important for circuit protection?
The JAN1N5660A has a maximum clamping voltage (VC) of 132 V at 179 A peak pulse current (10/1000 µs). This value represents the highest voltage imposed on protected circuitry during worst-case surge events. Keeping VC below the absolute maximum ratings of downstream components - such as 150 V-rated MOSFETs or 135 V-input DC-DC converters - ensures functional safety and prevents catastrophic failure, making VC a key selection criterion alongside VWM and PPP.
JAN1N5660A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- DO-202AA, DO-13, Axial
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 111V
- Voltage - Breakdown (Min):
- 124V
- Voltage - Clamping (Max) @ Ipp:
- 179V
- Current - Peak Pulse (10/1000µs):
- 8.4A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/500
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-13 (DO-202AA)
JAN1N5660A FAQ
1.How can I place an order for JAN1N5660A through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N5660A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N5660A reliable?
The price and inventory of JAN1N5660A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N5660A is usually 5 days.
3.What payment methods are accepted for JAN1N5660A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N5660A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N5660A?
JAN1N5660A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N5660A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N5660A?
For technical support, including JAN1N5660A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N5660A requirements.
6.How does Aetrix verify that JAN1N5660A is sourced from the original manufacturer or authorized distributors?
All JAN1N5660A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N5660A meets industry standards.
7.What is the process for return or replacement of JAN1N5660A?
All JAN1N5660A units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N5660A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N5660A part is unused and in its original packaging.
Return procedure for JAN1N5660A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N5660A Tags
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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