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Microchip Technology JAN1N6139AUS/TR
- Part No.:
- JAN1N6139AUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6139AUS/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
JAN1N6139AUS/TR from Microsemi is a voidless hermetically sealed, bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JAN reliability level. It features a 5.7 V working standoff voltage (VWM), 7.13 V minimum breakdown voltage (V(BR)) at 175 mA, 11.2 V clamping voltage (VC) at 133.9 A peak pulse current (IPP), and 1500 W peak pulse power for 10/1000 µs waveform - deployed in aerospace power bus protection and avionics interface circuits.
For engineers reviewing the JAN1N6139AUS/TR datasheet, JAN1N6139AUS/TR pinout, JAN1N6139AUS/TR application, or JAN1N6139AUS/TR equivalent, key selection criteria include its military-grade hermetic glass package, bidirectional ESD/EFT/IEC61000-4-5 compliance, Category 1 metallurgical bonds, and thermal resistance of 5.0 °C/W junction-to-end cap - critical for high-reliability transient suppression in constrained thermal environments.
Technical Context
This TVS operates bidirectionally with no polarity marking and delivers robust surge immunity via hard-glass construction and internal tungsten-slug end caps. Its clamping behavior is defined by VC = 11.2 V at IPP = 133.9 A under 10/1000 µs pulse, with temperature coefficient αV(BR) = 0.06 %/°C ensuring stable breakdown across -55 °C to +175 °C operating range.
Designed for MIL-PRF-19500/516 compliance, it supports steady-state off-state power of 3.0 W at 25 °C ambient and derates linearly above 150 °C end-cap temperature. The device uses tin/lead-plated copper terminals and is compatible with EIA-481-B tape-and-reel packaging for automated SMT placement.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 5.7 V - maximum continuous reverse voltage before conduction; sets system-level DC operating margin. |
| V(BR) min | 7.13 V @ 175 mA - guaranteed breakdown threshold defining turn-on precision for transient detection. |
| VC @ IPP | 11.2 V @ 133.9 A - clamped voltage during 10/1000 µs surge; determines protected circuit's max overvoltage stress. |
| PPP | 1500 W - peak impulse power handling capacity; enables survivability against lightning-induced surges per IEC61000-4-5. |
| RθJEC | 5.0 °C/W - junction-to-end-cap thermal resistance; informs heatsinking requirements for sustained pulse repetition. |
| TJ/TSTG | -55 to +175 °C - qualified operating and storage temperature range supporting extended mission profiles in space and defense systems. |
| αV(BR) | 0.06 %/°C - low temperature drift ensures consistent clamping performance across wide thermal gradients. |
Pinout & Package
Package: Hermetically sealed voidless hard-glass "C" (SQ-MELF) surface-mount package with tungsten slugs and tin/lead-plated copper terminals. Dimensions: BD = 0.183–0.202 in (4.65–5.13 mm), BL = 0.205–0.245 in (5.21–6.22 mm), ECT = 0.019–0.028 in (0.48–0.71 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Transient current path | No polarity marking; symmetric conduction allows single-device protection on AC or floating lines without orientation constraints. |
| End Cap (both ends) | Thermal and mechanical interface | Direct thermal path to PCB pad or heatsink; tungsten slug enables RθJEC = 5.0 °C/W and withstands 260 °C solder reflow. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic seal | Eliminates moisture ingress and internal delamination risk - essential for 20+ year field life in vacuum or humid military environments. |
| Category 1 metallurgical bonds | Internal tungsten-copper interconnects rated for >10⁶ thermal cycles - prevents bond fatigue failure under repeated surge stress. |
| Triple-layer passivation | Enhanced surface insulation prevents leakage current drift and surface tracking during high-humidity operation. |
| MIL-PRF-19500/516 qualification | JAN-level screening includes burn-in, temperature cycling, and hermeticity testing - certifies suitability for Class H/S space and airborne systems. |
Applications
| Aerospace Power Distribution | Avionics Data Bus Protection |
|---|---|
Use Scenario: Protection of 28 V DC main bus against load dump and lightning-induced transients in UAV flight control systems. IC Role / Device Role / Timing Role: Bidirectional TVS clamping element placed across bus rails to limit voltage excursions to ≤11.2 V during 133.9 A surges. Use Value: Prevents latch-up and permanent damage to DC-DC converters and motor drivers while maintaining MIL-STD-704A compliance. |
Use Scenario: ESD and EFT hardening of ARINC 429 receive inputs exposed to cockpit EMI. IC Role / Device Role / Timing Role: Low-capacitance transient suppressor shunting fast transients before signal conditioning amplifiers. Use Value: Meets IEC61000-4-2 Level 4 (15 kV air/8 kV contact) and IEC61000-4-4 Level 3 (1 kV) without degrading 100 kHz data integrity. |
| Ground Vehicle Command Systems | Satellite Payload Interfaces |
Use Scenario: Surge protection on CAN bus nodes in armored vehicle C4ISR subsystems subjected to EMP and ignition noise. IC Role / Device Role / Timing Role: Standoff-clamp TVS placed at connector entry point to absorb 1500 W pulses without degradation. Use Value: Maintains functional safety integrity (ISO 26262 ASIL-B) by limiting bus voltage to safe levels during 10/1000 µs threats. |
Use Scenario: Radiation-hardened transient suppression on LVDS video links between star tracker and processor in LEO satellites. IC Role / Device Role / Timing Role: Hermetically sealed TVS providing inherent TID tolerance (>100 krad(Si)) and single-event burnout immunity. Use Value: Eliminates need for external shielding or redundant clamps - verified per MicroNote 050 radiation test reports. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6139US | Commercial-grade version; lacks JAN-level screening, hermeticity verification, and Category 1 bond certification. | Not approved for flight-critical or space-qualified designs; limited to ground-test or non-safety-critical prototypes. | Select only when full MIL-PRF-19500/516 compliance is not required and cost sensitivity outweighs long-term reliability needs. |
| JANTX1N6139AUS | Higher screening level (JANTX) with additional temperature cycling and life testing; identical electrical specs and package. | Required for Class S (space) and Class H (high-reliability airborne) programs where extended burn-in and lot traceability are mandated. | Choose when program specifications require JANTX-level documentation, lot acceptance testing, or extended warranty coverage. |
Compared with 1N6139US and JANTX1N6139AUS, the JAN1N6139AUS/TR provides the baseline military qualification needed for production deployment in defense electronics - balancing rigorous screening with manufacturability and supply chain continuity without over-specifying for non-flight applications.
Availability
JAN1N6139AUS/TR is available at Aetrix Electronics and suitable for aerospace power distribution, avionics data bus protection, and ground vehicle command systems requiring stable component supply across extended procurement cycles and obsolescence-sensitive programs.
Supply support for JAN1N6139AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for defense, aerospace, and industrial markets.
The JAN1N6139AUS/TR belongs to Microsemi's legacy military TVS family designed specifically for MIL-PRF-19500/516-compliant transient suppression in harsh-environment electronics - emphasizing hermeticity, surge robustness, and long-term parametric stability.
FAQ
What is the clamping voltage of JAN1N6139AUS/TR under standard 10/1000 µs surge conditions?
The JAN1N6139AUS/TR has a maximum clamping voltage (VC) of 11.2 V when subjected to a 133.9 A peak pulse current (IPP) under the standardized 10/1000 µs waveform. This value is measured and guaranteed per Microsemi's T4-LDS-0278-1 datasheet and defines the upper voltage limit imposed on protected circuitry during transient events.
Is JAN1N6139AUS/TR RoHS compliant?
No, JAN1N6139AUS/TR is not RoHS compliant. Per the nomenclature table in the datasheet, the "e3" RoHS designation applies only to commercial-grade versions (e.g., 1N6139AUS); the JAN prefix indicates military qualification with tin/lead plating, which is exempt from RoHS under EU Directive 2011/65/EU Annex III for high-reliability applications.
What does the "A" suffix signify in JAN1N6139AUS/TR?
The "A" suffix in JAN1N6139AUS/TR denotes tighter voltage tolerances: it specifies a standard V(BR) minimum (7.13 V), lower VC (11.2 V), and higher IPP (133.9 A) compared to the non-A version, which has 5% higher VC, 5% lower V(BR) min, and 5% lower IPP - making the "A" variant preferred for precise clamping and higher surge margin.
Can JAN1N6139AUS/TR be used in place of axial-leaded 1N6139 devices?
No - JAN1N6139AUS/TR uses a surface-mount SQ-MELF ("C") package, while axial-leaded versions (e.g., 1N6139) use through-hole TO-204AA (DO-4) packaging. Mechanical mounting, thermal path, and PCB layout are incompatible; substitution requires redesign of footprint, thermal relief, and assembly process.
What is the maximum steady-state power dissipation for JAN1N6139AUS/TR at 25 °C ambient?
The JAN1N6139AUS/TR has a maximum steady-state off-state power dissipation (PD) of 3.0 W at TA = 25 °C, as specified in the Maximum Ratings table. This rating assumes controlled thermal resistance from mounting point to ambient and must be derated linearly above 150 °C end-cap temperature per datasheet Figure 4.
JAN1N6139AUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 5.7V
- Voltage - Breakdown (Min):
- 7.13V
- Voltage - Clamping (Max) @ Ipp:
- 11.2V
- Current - Peak Pulse (10/1000µs):
- 133.9A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6139AUS/TR FAQ
1.How can I place an order for JAN1N6139AUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6139AUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6139AUS/TR reliable?
The price and inventory of JAN1N6139AUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6139AUS/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6139AUS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6139AUS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6139AUS/TR?
JAN1N6139AUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6139AUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6139AUS/TR?
For technical support, including JAN1N6139AUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6139AUS/TR requirements.
6.How does Aetrix verify that JAN1N6139AUS/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6139AUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6139AUS/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6139AUS/TR?
All JAN1N6139AUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6139AUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6139AUS/TR part is unused and in its original packaging.
Return procedure for JAN1N6139AUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6139AUS/TR Tags
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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