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Microchip Technology JAN1N6139US/TR
- Part No.:
- JAN1N6139US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6139US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,540
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Product details
Overview
JAN1N6139US/TR from Microsemi is a military-qualified, voidless hermetically sealed, bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF package, with 5.7 V working standoff voltage (VWM), 7.13 V minimum breakdown voltage (V(BR)), and 11.2 V clamping voltage (VC) at 133.9 A peak pulse current (IPP) for 10/1000 µs waveform. It delivers 1500 W peak pulse power and operates across –55 °C to +175 °C junction temperature range, designed for lightning surge and ESD protection in avionics and hardened communication interfaces.
For engineers reviewing the JAN1N6139US/TR datasheet, JAN1N6139US/TR pinout, JAN1N6139US/TR application, or JAN1N6139US/TR equivalent, this part serves as a high-reliability, MIL-PRF-19500/516 qualified TVS for systems requiring guaranteed transient immunity under extreme environmental stress, radiation hardness, and zero-failure tolerance.
Technical Context
This device implements a robust silicon avalanche diode structure housed in a hard-glass, voidless hermetic package with Category 1 metallurgical bonds-enabling stable operation up to 175 °C junction temperature and intrinsic radiation hardness per MicroNote 050. Its bidirectional configuration provides symmetrical clamping without polarity marking, supporting AC-coupled signal lines and differential bus protection.
Rated for 1500 W peak pulse power (10/1000 µs), it achieves 11.2 V clamping at 133.9 A IPP while maintaining only 300 µA standby current at 5.7 V VWM. Thermal resistance from junction to end cap is 5.0 °C/W, enabling direct thermal coupling to PCB copper or heatsinking structures in high-power surge events.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 5.7 V - Maximum continuous DC or repetitive peak voltage before conduction begins; sets operating margin for protected circuitry. |
| V(BR) min | 7.13 V @ 175 mA - Guaranteed avalanche onset threshold; ensures predictable turn-on during transients. |
| VC @ IPP | 11.2 V @ 133.9 A - Clamped voltage during 10/1000 µs surge; defines worst-case overvoltage seen by downstream ICs. |
| PPP | 1500 W - Peak impulse power handling capacity; supports IEC61000-4-5 Level 4 secondary lightning surges. |
| ID @ VWM | 300 µA - Low leakage at rated standoff; minimizes quiescent loading on sensitive analog or low-power rails. |
| TJ Range | –55 °C to +175 °C - Full military temperature coverage; validated for aerospace, missile, and downhole electronics. |
| RθJEC | 5.0 °C/W - Junction-to-end-cap thermal resistance; enables direct thermal path design without solder joint reliance. |
Pinout & Package
Package: SQ-MELF (Square-End-Cap Metal Electrode Leadless Face), hermetically sealed voidless hard glass with tungsten slugs; terminals are tin/lead plated copper; no polarity marking due to bidirectional symmetry.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Bidirectional avalanche junction | No functional distinction between ends; either terminal may connect to line or ground in AC protection configurations. |
| End Cap (both ends) | Thermal and electrical interface | Provides primary heat dissipation path and low-inductance current return; requires full-surface solder contact for rated PPP. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture and particle migration, ensuring >20-year reliability in vacuum or high-humidity military environments. |
| Category 1 metallurgical bonds | Guarantees bond integrity under thermal shock (–55 °C to +175 °C cycling) and mechanical vibration per MIL-STD-883. |
| MIL-PRF-19500/516 qualification (JAN level) | Validated screening includes burn-in, temperature cycling, hermeticity testing, and lot acceptance tests per military specification. |
| Inherent radiation hardness | Specified per Microsemi MicroNote 050; suitable for TID > 100 krad(Si) applications without derating. |
Applications
| Avionics Power Bus Protection | Military Data Link Interfaces |
|---|---|
Use Scenario: Protecting 28 V DC aircraft power distribution buses against load dump and induced lightning transients. IC Role / Device Role / Timing Role: Bidirectional TVS clamping device placed across bus rails to limit voltage excursions to <12 V during 1500 W surges. Use Value: Prevents latch-up or destruction of upstream DC-DC converters and downstream FPGAs during MIL-STD-704F transient events. | Use Scenario: Shielding RS-422/RS-485 differential pairs in tactical radios exposed to ESD and EFT per IEC61000-4-2/4-4. IC Role / Device Role / Timing Role: Symmetrical clamping element across differential lines, leveraging bidirectional response without polarity constraints. Use Value: Maintains signal integrity below 11.2 V clamping threshold while surviving >15 kV contact ESD pulses without degradation. |
| Missile Guidance Signal Conditioning | Downhole Telemetry Systems |
Use Scenario: Safeguarding analog sensor front-ends (e.g., accelerometers, gyros) in guided munitions subjected to launch shock and EM pulse. IC Role / Device Role / Timing Role: Standoff-limited TVS placed at input filter stage to suppress fast-rising transients before op-amp inputs. Use Value: Enables operation at 175 °C ambient with <300 µA leakage, preserving low-noise performance in high-temperature inertial measurement units. | Use Scenario: Protecting serial communication lines (e.g., SDI-12, Modbus RTU) in oil/gas wellhead controllers operating at 150 °C ambient. IC Role / Device Role / Timing Role: High-temperature-stable clamping device mounted directly on ceramic substrate with tungsten slug thermal path. Use Value: Delivers full 1500 W surge capability at elevated temperature without derating, unlike polymer-based TVS alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6139US | Same electrical specs but JANTXV-level screening (enhanced burn-in, extended temperature testing); higher cost and longer lead time. | Required for space-grade or critical flight hardware where JANS-level qualification is mandated. | Select when full JANTXV screening documentation and traceability are contractually required. |
| 1N6139AUS | Commercial-grade version; identical VWM, V(BR), VC, and PPP, but not MIL-PRF-19500/516 qualified. | Suitable for industrial prototypes or non-military production where cost and availability outweigh formal qualification needs. | Choose for early development or cost-sensitive programs where military screening is not enforced. |
Compared with JAN1N6139US/TR, JANTXV1N6139US adds rigorous screening for mission-critical deployment, while 1N6139AUS retains full electrical performance at lower cost and faster delivery-enabling tiered qualification strategies across program phases.
Availability
JAN1N6139US/TR is available at Aetrix Electronics and suitable for avionics power bus protection, military data link interfaces, missile guidance signal conditioning, and downhole telemetry systems requiring stable component supply under extended lifecycle commitments.
Supply support for JAN1N6139US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, RF, and radiation-hardened components for defense, aerospace, and industrial markets.
The JAN1N6139US/TR belongs to Microsemi's legacy MIL-PRF-19500/516 qualified TVS family, engineered specifically for failure-intolerant systems where transient immunity must be guaranteed across extreme temperature, radiation, and mechanical stress conditions.
FAQ
What is the clamping voltage of JAN1N6139US/TR at its rated peak pulse current?
The JAN1N6139US/TR has a maximum clamping voltage (VC) of 11.2 V at 133.9 A peak pulse current (IPP) for a 10/1000 µs waveform. This value is measured under standardized surge conditions and defines the upper voltage limit imposed on protected circuitry during transient events. The low VC ensures compatibility with 5 V and 3.3 V logic interfaces when used with appropriate series impedance.
Is JAN1N6139US/TR RoHS compliant?
No, JAN1N6139US/TR is not RoHS compliant. Per the nomenclature table in the datasheet, RoHS-compliant versions (marked with "e3") are available only for commercial-grade variants such as 1N6139AUS. The JAN prefix indicates military qualification with tin/lead plating, which falls outside RoHS exemption scope for high-reliability applications.
What does the "TR" suffix mean in JAN1N6139US/TR?
The "TR" suffix in JAN1N6139US/TR denotes tape-and-reel packaging per EIA-481-B standard. This format supports automated SMT placement and is the default shipping configuration for surface-mount SQ-MELF devices. The part remains functionally and electrically identical to the same base number in bulk or ammo-pack formats.
Can JAN1N6139US/TR be used in place of JAN1N6138US/TR?
No-JAN1N6139US/TR and JAN1N6138US/TR have different electrical ratings: JAN1N6138US/TR has VWM = 5.2 V and VC = 10.5 V, while JAN1N6139US/TR has VWM = 5.7 V and VC = 11.2 V. Substituting them requires verification of system-level standoff margin and clamping headroom. The JAN1N6139US/TR is not a drop-in replacement for JAN1N6138US/TR without circuit revalidation.
What is the thermal resistance from junction to end cap for JAN1N6139US/TR?
The thermal resistance from junction to end cap (RθJEC) for JAN1N6139US/TR is 5.0 °C/W. This parameter reflects the dominant thermal path through the tungsten slugs and glass body to the PCB pads. Effective heat dissipation requires full-surface solder contact to both end caps, and this value enables accurate steady-state and transient thermal modeling in high-power surge scenarios.
JAN1N6139US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 5.7V
- Voltage - Breakdown (Min):
- 7.13V
- Voltage - Clamping (Max) @ Ipp:
- 11.2V
- Current - Peak Pulse (10/1000µs):
- 133.9A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6139US/TR FAQ
1.How can I place an order for JAN1N6139US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6139US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6139US/TR reliable?
The price and inventory of JAN1N6139US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6139US/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6139US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6139US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6139US/TR?
JAN1N6139US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6139US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6139US/TR?
For technical support, including JAN1N6139US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6139US/TR requirements.
6.How does Aetrix verify that JAN1N6139US/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6139US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6139US/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6139US/TR?
All JAN1N6139US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6139US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6139US/TR part is unused and in its original packaging.
Return procedure for JAN1N6139US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6139US/TR Tags
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