Microchip Technology JAN1N6140AUS/TR

Overview

JAN1N6140AUS/TR from Microsemi is a military-qualified, voidless hermetically sealed bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF package, rated for 1500 W peak pulse power (10/1000 µs), 6.2 V working standoff voltage (V_WM), and 12.1 V clamping voltage (V_C) at 124 A peak pulse current. It serves as primary overvoltage protection in high-reliability aerospace power interfaces.

For engineers reviewing the JAN1N6140AUS/TR datasheet, JAN1N6140AUS/TR pinout, JAN1N6140AUS/TR application, or JAN1N6140AUS/TR equivalent, key selection criteria include MIL-PRF-19500/516 qualification level (JAN), bidirectional clamping behavior, glass-body thermal resistance (5.0 °C/W), and IEC61000-4-2/4-4/4-5 compliance for ESD, EFT, and lightning surge immunity.

Technical Context

This device operates as a bidirectional avalanche diode with no polarity marking, leveraging hard-glass construction and Category 1 metallurgical bonds to sustain repeated 1500 W transients without degradation. Its breakdown voltage is 7.79 V at 150 mA, with temperature coefficient αV(BR) = 0.06 %/°C and standby leakage ≤100 µA at 6.2 V.

Designed for surface-mount reliability in extreme environments, it features voidless hermetic sealing, tin/lead-plated copper terminals, and square-end-cap geometry for precise automated placement. Thermal derating follows linear reduction of off-state power above 150 °C junction temperature, reaching zero at 175 °C.

Key Specifications

Pinout & Package

Package: SQ-MELF (Square-End Cap Metal Electrode Leadless Face), hermetically sealed voidless hard glass with tungsten slugs; dimensions: BD = 0.183–0.202 in (4.65–5.13 mm), BL = 0.205–0.245 in (5.21–6.22 mm), ECT = 0.019–0.028 in (0.48–0.71 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Compared with JANTX1N6140AUS/TR and 1N6140AUS/TR, the JAN1N6140AUS/TR delivers verified JAN-level screening with documented lot traceability and hermeticity assurance-critical for spaceflight and nuclear-hardened platforms where failure modes must be excluded by design, not just tested.

Availability

JAN1N6140AUS/TR is available at Aetrix Electronics and suitable for aerospace power distribution, avionics data bus protection, military vehicle ECUs, and ground-based radar power inputs requiring stable component supply across extended production lifecycles.

Supply support for JAN1N6140AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and MIL-qualified components.

The JAN1N6140AUS/TR belongs to Microsemi's legacy 1N61xxAUS TVS family, engineered specifically for mission-critical transient suppression where hermetic sealing, Category 1 bonding, and MIL-PRF-19500/516 compliance are mandatory.

FAQ

What is the clamping voltage of JAN1N6140AUS/TR at its rated peak pulse current?

The JAN1N6140AUS/TR has a maximum clamping voltage (V_C) of 12.1 V at 124 A peak pulse current (I_PP) under the standard 10/1000 µs waveform. This value is measured per MIL-STD-750 Method 3019 and guarantees that downstream circuitry remains within safe operating limits during surge events. The low V_C relative to V_WM (6.2 V) reflects tight process control and stable avalanche characteristics inherent to the JAN1N6140AUS/TR's hard-glass construction.

Is JAN1N6140AUS/TR compatible with lead-free reflow processes?

JAN1N6140AUS/TR uses tin/lead (SnPb) plating per standard specification and is rated for solder temperature up to 260 °C for 10 seconds-compatible with SnPb reflow profiles. While RoHS-compliant matte-tin versions exist for commercial-grade 1N6140AUS/TR, the JAN1N6140AUS/TR itself is not RoHS-compliant and requires Pb-based assembly. Its thermal resistance (R_θJEC = 5.0 °C/W) and glass-body construction remain stable under controlled Pb-free thermal excursions, but full qualification for Pb-free reflow is not documented for the JAN variant.

Does JAN1N6140AUS/TR require polarity-aware PCB layout?

No, JAN1N6140AUS/TR is a bidirectional TVS with no polarity marking and symmetric avalanche characteristics-its anode and cathode terminals are functionally identical. The device clamps equally in both directions, making it ideal for AC-coupled lines, floating grounds, or ungrounded differential buses. PCB layout requires only two symmetric SMT pads matching the SQ-MELF footprint; orientation does not affect electrical performance or surge protection capability.

How does JAN1N6140AUS/TR meet IEC61000-4-5 surge immunity requirements?

JAN1N6140AUS/TR meets IEC61000-4-5 Level 3 (2 kV line-to-earth, 1 kV line-to-line) through its 1500 W peak pulse power rating and 12.1 V clamping voltage at 124 A. When deployed with appropriate series impedance (e.g., 2 Ω line impedance), it limits induced surge voltages to <15 V at protected IC inputs. Its fast response (<1 ns) and hermetic construction ensure consistent performance across temperature extremes and long-term reliability-key for certified avionics and military platform compliance.

What is the maximum steady-state power dissipation of JAN1N6140AUS/TR at 25 °C ambient?

At T_A = 25 °C, the JAN1N6140AUS/TR has a steady-state off-state power rating (P_D) of 3.0 W. This value assumes adequate PCB thermal management (e.g., copper pour under end caps) and is derived from its thermal resistance junction-to-ambient (R_θJA ≈ 50 °C/W). Derating begins linearly above 25 °C, reaching 0 W at 85 °C ambient per Figure 5 in the datasheet-critical for sustained operation in enclosed avionics enclosures.