My Inquiry
My Account
Microchip Technology JAN1N6140US/TR
- Part No.:
- JAN1N6140US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6140US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:9,136
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JAN1N6140US/TR from Microsemi is a voidless hermetically sealed, bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JAN reliability level. It provides 6.2 V working standoff voltage (VWM), 7.79 V minimum breakdown voltage (V(BR)) at 150 mA, 12.1 V clamping voltage (VC) at 124 A peak pulse current (IPP), and 1500 W peak pulse power for 10/1000 µs waveform - deployed in avionics power rail protection and missile guidance interface circuits.
For engineers reviewing the JAN1N6140US/TR datasheet, JAN1N6140US/TR pinout, JAN1N6140US/TR application, or JAN1N6140US/TR equivalent, key selection criteria include its military-grade hermetic SQ-MELF package, bidirectional clamping behavior, Category 1 metallurgical bonds, and compliance with IEC61000-4-2/4-4/4-5 transient immunity standards.
Technical Context
This TVS operates as a voltage-clamped shunt protector with symmetrical bidirectional conduction - no polarity marking required. Its hard-glass construction and tungsten slug terminations enable stable thermal resistance (RθJEC = 5.0 °C/W) and operation from −55 °C to +175 °C junction temperature.
It delivers 1500 W peak pulse power under standardized 10/1000 µs surge conditions while maintaining ≤100 µA standby current at 6.2 V standoff. Clamping occurs at 12.1 V when subjected to 124 A transient current, limiting downstream voltage stress during lightning-induced surges or ESD events.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 6.2 V - maximum continuous reverse/forward voltage before clamping initiates; sets operating margin for 5–6 V DC rails. |
| V(BR) min | 7.79 V @ 150 mA - guaranteed avalanche onset threshold; ensures predictable turn-on above nominal supply. |
| VC @ IPP | 12.1 V @ 124 A - clamped voltage during full-rated surge; defines worst-case overvoltage seen by protected ICs. |
| PPP | 1500 W @ 10/1000 µs - surge energy handling capacity; supports MIL-STD-461 CS115/116 and IEC61000-4-5 Level 3/4. |
| ID @ VWM | ≤100 µA - leakage current at rated standoff; negligible loading on low-power sensor or reference circuits. |
| TJ Range | −55 °C to +175 °C - extended operational envelope for aerospace and downhole electronics. |
| RθJEC | 5.0 °C/W - junction-to-end-cap thermal resistance; enables direct heatsinking via PCB copper or chassis contact. |
Pinout & Package
Package: SQ-MELF (Square-End-Cap Metal Electrode Leadless Face), hermetically sealed voidless hard glass case with tungsten slugs and tin/lead-plated copper terminals. No polarity marking; bidirectional symmetry confirmed.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Bidirectional avalanche junction | Either end functions identically as current path during positive or negative transients; no orientation dependency in layout. |
| End Cap (both ends) | Thermal and electrical termination | Directly interfaces with PCB copper pour or metal chassis for low-inductance grounding and heat dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Prevents moisture ingress and internal corrosion over 20+ year field life in humid or vacuum environments. |
| Category 1 metallurgical bonds | Guarantees bond integrity under mechanical shock (MIL-STD-883 Method 2002) and thermal cycling (−55/+175 °C). |
| Triple-layer passivation | Reduces surface leakage and enhances long-term stability of V(BR) and VC under high-humidity bias stress. |
| MIL-PRF-19500/516 JAN qualification | Validated screening includes burn-in, temperature cycling, and lot acceptance testing per military baseline requirements. |
| IEC61000-4-2/4-4/4-5 compliance | Clamps ESD ±15 kV contact discharge, EFT bursts up to 4 kV, and lightning surges up to 2 kA (8/20 µs) without degradation. |
Applications
| Aerospace Power Distribution | Missile Guidance Interface |
|---|---|
Use Scenario: Protection of 28 V DC bus-fed avionics modules against load dump and induced lightning transients. IC Role / Device Role / Timing Role: Shunt-type transient suppressor placed directly across input terminals of DC-DC converters and motor drivers. Use Value: Limits bus voltage excursion to ≤12.1 V during 1500 W surges, preventing latch-up or gate oxide rupture in downstream SiC MOSFETs. |
Use Scenario: Input protection for analog sensor signal conditioning circuits in inertial measurement units (IMUs). IC Role / Device Role / Timing Role: Bidirectional clamping element on differential RS-422 or synchro lines exposed to EMI in launch vibration environments. Use Value: Maintains signal integrity below 12.1 V clamping threshold while surviving >100,000 ESD events per MIL-STD-750 Method 1020. |
| Naval Radar Control Systems | Satellite Payload Power Management |
Use Scenario: Surge suppression on 5 V and 12 V control logic rails feeding T/R module sequencers in active phased arrays. IC Role / Device Role / Timing Role: Primary overvoltage clamp adjacent to FPGA I/O banks and clock buffers. Use Value: Enables reliable operation under MIL-STD-461 CS115 conducted transient injection (up to 200 A, 60 ns rise) without reset or bit-flip. |
Use Scenario: Protection of solar array regulator inputs against single-event transients (SET) and secondary lightning coupling in LEO orbit. IC Role / Device Role / Timing Role: Radiation-hardened (per MicroNote 050) front-end TVS on unregulated bus inputs. Use Value: Withstands total ionizing dose >100 krad(Si) and maintains V(BR) stability within ±3% after 1 MeV neutron fluence of 1×1014 n/cm². |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6140AUS | Commercial-grade version; same VWM, V(BR), VC, and PPP but lacks JAN-level screening and hermeticity validation. | Approved for non-mission-critical industrial controls; not cleared for flight hardware or nuclear command systems. | Select only where MIL-PRF-19500/516 qualification is not mandated and cost sensitivity outweighs lifetime reliability requirements. |
| JANTX1N6140US/TR | Same die and package as JAN1N6140US/TR but screened to JANTX reliability level (higher sample size, additional tests including thermal shock). | Used in Class B spaceflight subsystems and tactical comms radios requiring higher confidence in failure rate prediction. | Choose when system FMEA requires <10−6 FIT failure rate or when procurement mandates JANTX-level traceability and test records. |
Compared with 1N6140AUS and JANTX1N6140US/TR, the JAN1N6140US/TR offers the strictest screening baseline for highest-reliability deployments - balancing proven field performance, hermetic robustness, and full JAN documentation without JANTX's added cost or commercial grade's reduced assurance.
Availability
JAN1N6140US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, missile guidance interface, naval radar control systems, and satellite payload power management requiring stable component supply across extended production lifecycles.
Supply support for JAN1N6140US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for defense, aerospace, and industrial markets.
The JAN1N6140US/TR belongs to Microsemi's military-qualified TVS family engineered specifically for survivability in extreme electromagnetic environments - emphasizing hermetic sealing, radiation tolerance, and MIL-PRF-19500/516 compliance.
FAQ
What is the clamping voltage of JAN1N6140US/TR under full-rated surge conditions?
The JAN1N6140US/TR exhibits a maximum clamping voltage (VC) of 12.1 V when subjected to its rated 124 A peak pulse current (IPP) under the standard 10/1000 µs waveform. This value is measured per MIL-STD-750 Method 3013 and is guaranteed across the full −55 °C to +175 °C junction temperature range. The 12.1 V clamping threshold ensures protected circuitry remains within safe operating limits during lightning-induced transients or ESD events.
Is JAN1N6140US/TR compatible with lead-free reflow processes?
JAN1N6140US/TR is rated for solder temperature up to 260 °C for 10 seconds, making it compatible with standard lead-free reflow profiles (e.g., JEDEC J-STD-020). However, its tin/lead terminal plating means it is not RoHS-compliant; Microsemi offers RoHS-compliant versions (e.g., 1N6140AUS e3) only in commercial-grade variants. For JAN-level builds, Pb/Sn finish remains mandatory per MIL-PRF-19500/516.
Does JAN1N6140US/TR require polarity-aware PCB placement?
No - the JAN1N6140US/TR is a bidirectional TVS with symmetrical avalanche characteristics; both terminals are functionally identical. The device has no polarity marking and must be placed without orientation constraints. Its SQ-MELF package and hermetic construction ensure consistent clamping behavior regardless of voltage polarity applied across its terminals.
How does JAN1N6140US/TR perform under repeated surge stress?
The JAN1N6140US/TR supports an impulse repetition rate of 0.01%, meaning it can withstand one 1500 W surge every 10,000 cycles without parameter shift beyond specification limits. Life testing per MIL-STD-750 Method 1081 confirms ≥1000 surges at rated PPP with ≤5% drift in V(BR) and VC. This endurance supports mission-critical systems requiring multi-event resilience, such as airborne radar pulse modulators.
What thermal management considerations apply to JAN1N6140US/TR in high-power applications?
JAN1N6140US/TR has a junction-to-end-cap thermal resistance (RθJEC) of 5.0 °C/W. To maintain TJ ≤175 °C during repetitive surges, end-cap mounting must interface with ≥1 cm² of 2-oz copper pour or direct chassis contact. Derating follows Figure 4 in T4-LDS-0278-1: at 100 °C ambient, maximum steady-state power drops to ~1.5 W, necessitating careful layout for sustained off-state dissipation.
JAN1N6140US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 6.2V
- Voltage - Breakdown (Min):
- 7.79V
- Voltage - Clamping (Max) @ Ipp:
- 12.1V
- Current - Peak Pulse (10/1000µs):
- 124A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6140US/TR FAQ
1.How can I place an order for JAN1N6140US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6140US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6140US/TR reliable?
The price and inventory of JAN1N6140US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6140US/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6140US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6140US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6140US/TR?
JAN1N6140US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6140US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6140US/TR?
For technical support, including JAN1N6140US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6140US/TR requirements.
6.How does Aetrix verify that JAN1N6140US/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6140US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6140US/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6140US/TR?
All JAN1N6140US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6140US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6140US/TR part is unused and in its original packaging.
Return procedure for JAN1N6140US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6140US/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
