Microchip Technology JAN1N6141AUS/TR
- Part No.:
- JAN1N6141AUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6141AUS/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
JAN1N6141AUS/TR from Microsemi is a military-qualified, voidless hermetically sealed bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF package, rated for 1500 W peak pulse power (10/1000 µs), 6.9 V working standoff voltage (VWM), 8.65 V minimum breakdown voltage (VBR @ 150 mA), and 13.4 V clamping voltage (VC @ 111.9 A). It delivers ESD/EFT protection per IEC61000-4-2/4-4 and lightning secondary-effect suppression in high-reliability aerospace and defense power interfaces.
For engineers reviewing the JAN1N6141AUS/TR datasheet, JAN1N6141AUS/TR pinout, JAN1N6141AUS/TR application, or JAN1N6141AUS/TR equivalent, this part supports critical transient suppression in MIL-PRF-19500/516-compliant systems where failure tolerance, radiation hardness, and thermal stability up to +175 °C are mandatory design requirements.
Technical Context
This TVS operates bidirectionally with no polarity marking and uses internal Category 1 metallurgical bonds within a hard-glass, voidless hermetic seal-enabling stable performance under thermal cycling and radiation exposure. Its triple-layer passivation and tungsten slug construction ensure robust surge handling across -55 °C to +175 °C junction temperature range.
The device exhibits a low 0.06 %/°C temperature coefficient of breakdown voltage (αVBR) and linear derating of off-state power above 150 °C at the end cap (TEC). Thermal resistance from junction to end cap is 5.0 °C/W, supporting high-power transient absorption without thermal runaway in constrained layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 6.9 V - Maximum continuous reverse/forward voltage before conduction begins; defines system operating margin before clamping. |
| VBR min | 8.65 V @ 150 mA - Minimum voltage at which device enters controlled avalanche; ensures predictable turn-on threshold. |
| VC | 13.4 V @ 111.9 A - Clamped voltage during 10/1000 µs surge; limits downstream circuit stress to safe levels. |
| PPP | 1500 W - Peak pulse power rating for standardized surge waveform; enables protection against IEC61000-4-5 Level 3–4 transients. |
| IPP | 111.9 A - Peak pulse current corresponding to VC; quantifies maximum surge energy the device can absorb. |
| TJ/TSTG | -55 °C to +175 °C - Full military-grade junction and storage temperature range; supports operation in extreme environments. |
| RθJEC | 5.0 °C/W - Junction-to-end-cap thermal resistance; enables accurate thermal modeling when mounted to heat-sinked PCB pads. |
Pinout & Package
SQ-MELF (Square-End-Cap Metal Electrode Leadless Face) surface-mount package: hermetically sealed voidless hard glass body with tungsten slugs, tin/lead-plated copper terminals, and no polarity marking. Dimensions: BD = 0.183–0.202 in (4.65–5.13 mm), BL = 0.205–0.245 in (5.21–6.22 mm), ECT = 0.019–0.028 in (0.48–0.71 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Transient current path | Both terminals function identically; no polarity required-simplifies layout and eliminates orientation errors during placement. |
| End Cap (glass body contact) | Thermal interface | Primary heat dissipation path; requires direct thermal coupling to PCB copper pour or heatsink for sustained power handling. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination-ensures long-term reliability in vacuum, humidity, and thermal shock environments. |
| Category 1 metallurgical bonds | Guarantees bond integrity under mechanical stress and radiation exposure; validated per MIL-PRF-19500/516 screening. |
| Triple-layer passivation | Prevents surface leakage and contamination-induced degradation-critical for stable standby current (ID ≤ 100 µA at VWM). |
| JAN-level qualification | Fully screened to MIL-PRF-19500/516 requirements including burn-in, temperature cycling, and life test-certified for flight-critical systems. |
| Radiation hardness | Inherently radiation-tolerant per MicroNote 050; suitable for space-qualified electronics without additional shielding or derating. |
Applications
| Aerospace Power Distribution | Military Vehicle ECUs |
|---|---|
Use Scenario: Protection of 28 V DC bus inputs in satellite power conditioning units exposed to load dump and ESD events during launch and orbit. IC Role / Device Role / Timing Role: Bidirectional TVS clamping transient overvoltage on primary power rail before it reaches DC/DC converters and FPGAs. Use Value: Withstands 1500 W surges while maintaining VC ≤ 13.4 V-prevents latch-up and gate oxide damage in downstream silicon rated for ≤ 16 V absolute max. |
Use Scenario: Input protection for engine control modules in tracked armored vehicles subjected to ignition noise, alternator load dump, and EMP-like pulses. IC Role / Device Role / Timing Role: Fast-response transient suppressor on 24 V sensor and actuator supply lines interfacing with microcontrollers and CAN transceivers. Use Value: 0.06 %/°C αVBR ensures stable clamping across -40 °C to +105 °C ambient-avoids false triggering or insufficient protection at temperature extremes. |
| Avionics Data Bus Interfaces | Nuclear Facility Instrumentation |
Use Scenario: Surge protection on ARINC 429 or MIL-STD-1553 data line power rails in flight control computers. IC Role / Device Role / Timing Role: Standoff-clamp TVS placed between isolated DC-DC output and bus transceiver supply pins. Use Value: 100 µA max ID at 6.9 V VWM prevents signal distortion or bias shift in precision analog receivers sharing the same rail. |
Use Scenario: Input protection for radiation-monitoring sensors and safety PLCs operating in high-dose gamma/neutron fields near reactor cores. IC Role / Device Role / Timing Role: Primary transient barrier on 12 V auxiliary power feeds supplying hardened analog front-ends and watchdog circuits. Use Value: Inherent radiation hardness (per MicroNote 050) and 175 °C max TJ allow uninterrupted operation without derating in elevated ambient and ionizing environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar bidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6141AUS | Higher screening level (JANTXV vs JAN): includes extended temperature testing, 100% lot acceptance testing, and tighter parametric limits on VC and IPP. | Required for mission-critical avionics where failure modes must be statistically bounded per MIL-HDBK-217F. | Select JANTXV version when full burn-in, radiation lot acceptance, and zero-defect screening are mandated by system safety plan. |
| 1N6141AUS (commercial) | No MIL-PRF-19500/516 qualification; RoHS-compliant matte-tin plating available; VC and IPP tolerances relaxed per nomenclature note (5% higher VC, 5% lower IPP). | Suitable for industrial test equipment or non-safety-critical telecom infrastructure where cost and RoHS compliance outweigh military screening needs. | Choose commercial 1N6141AUS only for non-mission-critical designs with verified thermal margin and no radiation or extreme temperature requirements. |
Compared with JANTXV1N6141AUS and commercial 1N6141AUS, JAN1N6141AUS/TR provides the optimal balance of MIL-qualified reliability, proven radiation tolerance, and production-ready availability-making it the preferred choice for Tier-1 defense subcontractors requiring traceable JAN-level components without JANTXV cost premiums.
Availability
JAN1N6141AUS/TR is available at Aetrix Electronics and suitable for aerospace power distribution, military vehicle ECUs, avionics data bus interfaces, and nuclear facility instrumentation requiring stable component supply under ITAR-controlled logistics and long-lifecycle procurement.
Supply support for JAN1N6141AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for defense, aerospace, and industrial markets.
The JAN1N6141AUS/TR belongs to Microsemi's legacy military TVS family designed specifically for MIL-PRF-19500/516-compliant transient suppression in safety-critical systems where hermeticity, thermal resilience, and radiation immunity are non-negotiable.
FAQ
What is the clamping voltage of JAN1N6141AUS/TR under a 10/1000 µs surge?
The clamping voltage (VC) of JAN1N6141AUS/TR is 13.4 V when subjected to its rated peak pulse current of 111.9 A under a 10/1000 µs waveform. This value is measured per MIL-STD-883 Method 3012 and guaranteed across the full -55 °C to +175 °C junction temperature range. The consistent VC ensures predictable protection margins for downstream 15 V-rated components in JAN1N6141AUS/TR-based designs.
Is JAN1N6141AUS/TR compatible with lead-free reflow processes?
JAN1N6141AUS/TR is qualified for solder reflow at 260 °C for 10 seconds per MIL-STD-202 Method 210, making it compatible with standard lead-free reflow profiles. However, its tin/lead terminal plating means it is not RoHS-compliant; for RoHS applications, the commercial 1N6141AUS variant with matte-tin plating must be selected instead of JAN1N6141AUS/TR.
Does JAN1N6141AUS/TR require polarity-aware PCB layout?
No-JAN1N6141AUS/TR is a bidirectional TVS with no polarity marking and symmetric electrical characteristics. Both terminals perform identically as anode/cathode depending on transient polarity, eliminating orientation constraints during automated placement. This simplifies PCB layout, reduces assembly errors, and supports compact two-pad footprints in JAN1N6141AUS/TR implementations.
How does the temperature coefficient affect JAN1N6141AUS/TR performance in wide-temperature environments?
JAN1N6141AUS/TR has a breakdown voltage temperature coefficient (αVBR) of 0.06 %/°C, meaning VBR increases by ~5.2 mV/°C over its operating range. This low drift ensures stable clamping onset across -55 °C to +175 °C, preventing premature conduction at cold temperatures or insufficient protection at high temperatures in JAN1N6141AUS/TR deployments.
Can JAN1N6141AUS/TR be used in parallel for higher surge capacity?
Parallel use of JAN1N6141AUS/TR devices is not recommended due to parameter mismatch (VBR, VC) causing current imbalance and potential single-device overstress. For higher surge ratings, Microsemi specifies discrete higher-power variants (e.g., JAN1N6165AUS) rather than paralleling JAN1N6141AUS/TR units-ensuring reliable, tested performance in mission-critical JAN1N6141AUS/TR applications.
JAN1N6141AUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 6.9V
- Voltage - Breakdown (Min):
- 8.65V
- Voltage - Clamping (Max) @ Ipp:
- 13.4V
- Current - Peak Pulse (10/1000µs):
- 111.9A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6141AUS/TR FAQ
1.How can I place an order for JAN1N6141AUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6141AUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6141AUS/TR reliable?
The price and inventory of JAN1N6141AUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6141AUS/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6141AUS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6141AUS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6141AUS/TR?
JAN1N6141AUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6141AUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6141AUS/TR?
For technical support, including JAN1N6141AUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6141AUS/TR requirements.
6.How does Aetrix verify that JAN1N6141AUS/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6141AUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6141AUS/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6141AUS/TR?
All JAN1N6141AUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6141AUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6141AUS/TR part is unused and in its original packaging.
Return procedure for JAN1N6141AUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6141AUS/TR Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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D12V0L1B2LP-7B
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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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