Microchip Technology JAN1N6142US/TR
- Part No.:
- JAN1N6142US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6142US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

Inventory:9,313
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Product details
Overview
JAN1N6142US/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JAN level, with 7.6 V working standoff voltage (VWM), 9.50 V minimum breakdown voltage (V(BR)) at 125 mA, and 14.5 V clamping voltage (VC) at 103.4 A peak pulse current (IPP) for 10/1000 µs waveform - deployed in avionics power rail protection.
For engineers reviewing the JAN1N6142US/TR datasheet, JAN1N6142US/TR pinout, JAN1N6142US/TR application, or JAN1N6142US/TR equivalent, key selection criteria include military-grade reliability certification, bidirectional surge capability, glass-body thermal robustness, and compatibility with automated SMT placement on high-reliability PCBs.
Technical Context
This device operates as a bidirectional clamping TVS diode with no polarity marking, relying on symmetrical avalanche breakdown in both directions to suppress transient overvoltages. Its hard-glass hermetic package incorporates tungsten slugs and Category 1 metallurgical bonds, enabling operation from –55 °C to +175 °C junction temperature with 5.0 °C/W thermal resistance from junction to end cap.
The JAN1N6142US/TR delivers 1500 W peak pulse power (PPP) for 10/1000 µs waveform while maintaining ≤100 µA standby current at VWM and exhibiting 0.07 %/°C temperature coefficient of breakdown voltage - critical for stable clamping across wide environmental ranges in aerospace systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 7.6 V - maximum continuous DC or repetitive peak reverse voltage before conduction begins; sets operating margin below clamping threshold. |
| V(BR) min | 9.50 V @ 125 mA - guaranteed avalanche onset voltage; defines minimum trigger point under standardized test current. |
| VC @ IPP | 14.5 V @ 103.4 A - clamped voltage during 10/1000 µs surge; determines worst-case voltage seen by protected circuitry. |
| PPP | 1500 W - peak impulse power handling capacity; enables suppression of lightning-induced surges per IEC61000-4-5 Level 3. |
| ID @ VWM | ≤100 µA - leakage current at rated standoff; ensures minimal power loss and signal integrity in standby. |
| TJ Range | –55 °C to +175 °C - extended operational junction temperature range; supports deployment in engine-mounted or space-constrained military enclosures. |
Pinout & Package
Package: SQ-MELF (C-package variant), hermetically sealed voidless hard glass with tin/lead-plated copper terminals; square-end-cap geometry optimized for pick-and-place accuracy and thermal dissipation via end-cap mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Surge current path | No polarity marking; symmetric terminals conduct identically in either direction during transient events. |
| End Cap (both ends) | Thermal interface | Primary heat transfer path to PCB; RθJEC = 5.0 °C/W enables direct thermal coupling to copper pour or heatsink pad. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC-coupled or floating signal/power lines without polarity concerns. |
| Category 1 metallurgical bonds | Guarantees bond integrity under thermal cycling and mechanical shock - required for MIL-PRF-19500/516 JAN qualification. |
| Voidless hermetic seal | Eliminates internal moisture and contaminants, preventing long-term parameter drift in humid or corrosive environments. |
| Triple-layer passivation | Enhances surface stability and reduces leakage current drift over time and under bias stress. |
Applications
| Avionics Power Distribution | Military Vehicle ECUs |
|---|---|
Use Scenario: Protection of 28 V DC aircraft bus inputs against load dump and induced lightning transients. IC Role / Device Role / Timing Role: Bidirectional TVS clamping element placed directly at connector entry point. Use Value: Limits transient voltage to ≤14.5 V during 103.4 A surges, preserving downstream DC-DC converters and FPGAs. | Use Scenario: Surge suppression on CAN bus power rails in tracked vehicle control modules exposed to ESD and ignition noise. IC Role / Device Role / Timing Role: Standoff-clamp TVS in parallel with power input filter stage. Use Value: Maintains 7.6 V operating margin while surviving 1500 W pulses - compliant with MIL-STD-1275B. |
| Satellite Payload Interfaces | Tactical Radio Front Ends |
Use Scenario: Input protection for radiation-hardened ADC reference supplies in LEO satellite subsystems. IC Role / Device Role / Timing Role: Low-leakage (≤100 µA) standoff protector on precision analog rail. Use Value: Prevents latch-up or parametric shift during single-event transients without degrading reference stability. | Use Scenario: RF amplifier DC bias line protection in manpack radios subjected to electrostatic discharge per MIL-STD-883 Method 3015.8. IC Role / Device Role / Timing Role: Fast-response clamping device mounted adjacent to PA transistor collector feed. Use Value: Clamps ESD spikes within nanoseconds while sustaining 0.07 %/°C V(BR) drift - ensuring consistent protection across desert-to-arctic operating zones. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6142US | Same electrical specs; JANTXV qualification level replaces JAN - tighter parametric screening and enhanced screening per MIL-PRF-19500/516. | Required for programs mandating JANTXV-level traceability and burn-in; not suitable where JAN-level procurement is contractually specified. | Select when higher reliability screening is needed without changing circuit design or layout. |
| 1N6142AUS | Commercial-grade version; identical VWM, V(BR), VC, and IPP but unqualified to MIL-PRF-19500/516 and rated only to +150 °C TJ. | Approved for non-military industrial use; lacks radiation hardness and extended temperature validation. | Select for cost-sensitive ground-based systems where military qualification is not mandated. |
Compared with JAN1N6142US/TR, JANTXV1N6142US offers stricter screening for mission-critical platforms, while 1N6142AUS provides identical electrical performance at lower cost for commercial applications - enabling tiered sourcing without redesign.
Availability
JAN1N6142US/TR is available at Aetrix Electronics and suitable for avionics power distribution, military vehicle ECUs, and satellite payload interfaces requiring stable component supply across extended product lifecycles.
Supply support for JAN1N6142US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and MIL-spec components.
The JAN1N6142US/TR belongs to Microsemi's legacy military-qualified TVS diode family, engineered specifically for survivability in harsh electromagnetic environments where failure is not an option - including airborne, spaceborne, and battlefield-deployed systems.
FAQ
What is the clamping voltage of JAN1N6142US/TR under a 10/1000 µs surge?
The clamping voltage (VC) of JAN1N6142US/TR is 14.5 V when subjected to its rated peak pulse current of 103.4 A for a 10/1000 µs waveform. This value is measured per MIL-PRF-19500/516 test conditions and defines the maximum voltage imposed on protected circuitry during transient events. The JAN1N6142US/TR maintains this clamping performance across its full qualified temperature range.
Is JAN1N6142US/TR RoHS compliant?
No, JAN1N6142US/TR is not RoHS compliant. It uses tin/lead plating on copper terminals, consistent with MIL-PRF-19500/516 requirements for high-reliability solder joint integrity. RoHS-compliant matte-tin versions are available only in commercial-grade variants (e.g., 1N6142AUS), not in JAN-qualified parts like JAN1N6142US/TR.
What does the "TR" suffix indicate in JAN1N6142US/TR?
The "TR" suffix in JAN1N6142US/TR denotes tape-and-reel packaging per EIA-481-B standard, enabling automated surface-mount assembly. This packaging format includes carrier tape, cover tape, and reel configuration optimized for high-volume SMT placement equipment - distinct from bulk or ammo-pack options used for manual or low-volume insertion.
How does JAN1N6142US/TR differ from 1N6142AUS?
JAN1N6142US/TR is qualified to MIL-PRF-19500/516 at JAN level with full military screening, –55 °C to +175 °C operation, and radiation hardness per MicroNote 050; 1N6142AUS is its commercial counterpart with identical electrical specs but only up to +150 °C and no military qualification. The JAN1N6142US/TR also features tin/lead terminations, whereas 1N6142AUS may offer RoHS-compliant matte-tin.
Can JAN1N6142US/TR be used in bidirectional signal line protection?
Yes, JAN1N6142US/TR is inherently bidirectional due to its symmetrical avalanche structure and absence of polarity marking, making it suitable for protecting AC-coupled data lines, differential buses, or floating power domains. Its 7.6 V VWM and 14.5 V VC ensure safe clamping margins without DC bias constraints - a key advantage over unidirectional TVS diodes requiring careful orientation during layout.
JAN1N6142US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 7.6V
- Voltage - Breakdown (Min):
- 9.5V
- Voltage - Clamping (Max) @ Ipp:
- 14.5V
- Current - Peak Pulse (10/1000µs):
- 103.4A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6142US/TR FAQ
1.How can I place an order for JAN1N6142US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6142US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6142US/TR reliable?
The price and inventory of JAN1N6142US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6142US/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6142US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6142US/TR transactions.
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4.How is shipping managed for JAN1N6142US/TR?
JAN1N6142US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6142US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6142US/TR?
For technical support, including JAN1N6142US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6142US/TR requirements.
6.How does Aetrix verify that JAN1N6142US/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6142US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6142US/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6142US/TR?
All JAN1N6142US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6142US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6142US/TR part is unused and in its original packaging.
Return procedure for JAN1N6142US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6142US/TR Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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