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Microchip Technology JAN1N6144US/TR
- Part No.:
- JAN1N6144US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6144US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:4,027
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Product details
Overview
JAN1N6144US/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JAN level, with 9.1 V working standoff voltage (VWM), 11.40 V minimum breakdown voltage (V(BR)) at 100 mA, and 16.9 V clamping voltage (VC) at 88.8 A peak pulse current (IPP) for 10/1000 µs waveform - deployed in avionics power rail protection.
For engineers reviewing the JAN1N6144US/TR datasheet, JAN1N6144US/TR pinout, JAN1N6144US/TR application, or JAN1N6144US/TR equivalent, key selection criteria include military-grade reliability (JAN qualification), bidirectional surge suppression capability, hard-glass hermetic package integrity, 1500 W peak pulse power rating, and compatibility with high-reliability PCB assembly under MIL-STD-202 and MIL-STD-750 test conditions.
Technical Context
This TVS operates bidirectionally with no polarity marking and uses internal Category 1 metallurgical bonds within a voidless hermetically sealed hard-glass case. Its 9.1 V VWM and 11.40 V V(BR) define precise overvoltage threshold behavior under transient stress.
The device delivers 1500 W peak pulse power (10/1000 µs), clamps to 16.9 V at 88.8 A IPP, and maintains stable performance across –55 °C to +175 °C junction temperature range with thermal resistance RθJEC = 5.0 °C/W.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 9.1 V - maximum continuous reverse/forward voltage before conduction begins; sets operating margin for protected circuitry. |
| V(BR) min | 11.40 V @ 100 mA - guaranteed breakdown onset under DC test; defines lower bound of clamping threshold. |
| VC @ IPP | 16.9 V @ 88.8 A - clamped voltage during 10/1000 µs surge; determines maximum stress on downstream components. |
| PPP | 1500 W - peak impulse power handling capacity; enables robust protection against lightning-induced surges per IEC61000-4-5. |
| ID @ VWM | 20 µA - leakage current at rated standoff; ensures minimal standby power loss and signal integrity in high-impedance nodes. |
| TJ Range | –55 °C to +175 °C - extended operational envelope supporting aerospace, defense, and downhole electronics. |
Pinout & Package
Package: SQ-MELF (C package), hermetically sealed voidless hard glass with tungsten slugs; terminals are tin/lead plated copper; no polarity marking; weight ≈ 1100 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Surge current path | Either terminal serves as anode or cathode depending on transient polarity; no orientation required during placement. |
| End Cap (both ends) | Thermal interface | Direct thermal path to PCB or heatsink; RθJEC = 5.0 °C/W enables effective power dissipation during repetitive transients. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional transient suppression | Protects AC-coupled and floating circuits without polarity constraints; eliminates need for dual-device configurations. |
| Voidless hermetic glass seal | Prevents moisture ingress and internal corrosion; supports >20-year field life in harsh environments including vacuum and high-humidity operation. |
| Category 1 metallurgical bonds | Ensures mechanical and electrical integrity under shock, vibration, and thermal cycling per MIL-STD-883 methods. |
| JAN-level qualification | Fully tested to MIL-PRF-19500/516 requirements including screening, burn-in, and lot acceptance testing for mission-critical systems. |
Applications
| Avionics Power Distribution | Military Vehicle ECUs |
|---|---|
Use Scenario: Protection of 28 V DC bus inputs in flight control computers exposed to load dump and inductive switching transients. IC Role / Device Role / Timing Role: Bidirectional TVS clamping element placed directly at connector entry point to limit surge energy before it reaches regulators and FPGAs. Use Value: 16.9 V clamping voltage ensures downstream 3.3 V/5 V logic remains below absolute maximum ratings during 1500 W surges. | Use Scenario: Input protection for engine control units subjected to ISO 7637-2 Pulse 1, 2a, 3a/b, and MIL-STD-1275B transients. IC Role / Device Role / Timing Role: Primary overvoltage clamp on main 24 V supply rail, coordinated with upstream fuse and downstream LC filtering. Use Value: 88.8 A peak pulse current rating handles worst-case 100 V/500 ms transients without degradation after repeated events. |
| Satellite Power Conditioning | Naval Radar Signal Processing |
Use Scenario: Protection of DC-DC converter inputs in LEO satellite power management units operating under radiation exposure. IC Role / Device Role / Timing Role: Radiation-hardened transient suppressor placed at input filter stage to prevent latch-up in PMICs and ADC references. Use Value: Inherent radiation hardness per MicroNote 050 and –55 °C to +175 °C operation support unattended orbital deployment. | Use Scenario: Surge protection for analog front-end receivers in shipboard S-band radar systems vulnerable to ESD and EMP coupling. IC Role / Device Role / Timing Role: First-line defense on RF receiver bias lines and clock distribution networks sensitive to fast-rising transients. Use Value: Triple-layer passivation and <20 µA leakage preserve low-noise performance while meeting IEC61000-4-2 Level 4 (15 kV air) requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTX1N6144US | JANTX qualification level; tighter parametric screening and extended temperature testing vs. JAN. | Required for programs specifying JANTX-level reliability screening and traceability. | Select when full MIL-PRF-19500/516 JANTX compliance is mandated over JAN baseline. |
| 1N6144AUS | Commercial-grade version; non-RoHS compliant unless e3 suffix added; no military screening or lot traceability. | Suitable only for non-mission-critical industrial prototypes or cost-sensitive test fixtures. | Choose only if MIL-specification is not required and RoHS compliance is not needed. |
Compared with JANTX1N6144US and 1N6144AUS, the JAN1N6144US/TR offers the optimal balance of military reliability assurance, hermetic packaging integrity, and production-ready tape-and-reel delivery - making it the preferred choice for flight hardware and deployed defense systems where failure is not an option.
Availability
JAN1N6144US/TR is available at Aetrix Electronics and suitable for avionics power distribution, military vehicle ECUs, and satellite power conditioning requiring stable component supply with full MIL-PRF-19500/516 traceability and long-term obsolescence management.
Supply support for JAN1N6144US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-temperature, and ultra-reliable components.
The JAN1N6144US/TR belongs to Microsemi's legacy MIL-qualified TVS family engineered specifically for survivability in mission-critical platforms where transient immunity, hermetic sealing, and long-term parametric stability are non-negotiable design requirements.
FAQ
What is the clamping voltage of JAN1N6144US/TR and how is it measured?
The clamping voltage (VC) of JAN1N6144US/TR is 16.9 V, measured at 88.8 A peak pulse current (IPP) using a standardized 10/1000 µs double-exponential surge waveform. This value reflects the maximum voltage seen across the device during transient suppression and is critical for ensuring downstream components remain within safe operating limits. The measurement is performed per MIL-STD-750 Method 3019 and confirmed during JAN-level qualification testing.
Is JAN1N6144US/TR RoHS compliant?
No, JAN1N6144US/TR is not RoHS compliant. Per Microsemi documentation, RoHS-compliant versions (e3 suffix) are available only for commercial-grade variants such as 1N6144AUS/e3. The JAN1N6144US/TR uses tin/lead plating and is manufactured to meet MIL-PRF-19500/516 requirements, which permit leaded terminations for enhanced solder joint reliability in high-reliability applications.
What does the "TR" suffix mean in JAN1N6144US/TR?
The "TR" suffix in JAN1N6144US/TR indicates tape-and-reel packaging per EIA-481-B standard, enabling automated SMT placement. This format includes industry-standard carrier tape, cover tape, and reel quantities optimized for high-volume production. The underlying device remains identical to JAN1N6144US in electrical and mechanical specifications - only the packaging differs.
How does JAN1N6144US/TR differ from the non-A version 1N6144US?
JAN1N6144US/TR is the "A" version, meaning it has tighter voltage tolerances: its minimum breakdown voltage is 11.40 V (vs. ~5% lower for non-A), clamping voltage is 16.9 V (vs. ~5% higher for non-A), and peak pulse current is 88.8 A (vs. ~5% lower for non-A). These differences are defined in the nomenclature section of T4-LDS-0278-1 Rev. 2 and directly impact surge margin and system-level protection design.
Can JAN1N6144US/TR be used in place of axial-leaded 1N6144?
No - JAN1N6144US/TR is a surface-mount SQ-MELF (C) package, while axial-leaded 1N6144 is through-hole. They share identical electrical characteristics but differ mechanically: the US/TR variant requires reflow-compatible pad layout and has different thermal path geometry (end-cap conduction vs. lead-frame conduction). Substitution requires PCB redesign and is not recommended without full thermal and mechanical validation.
JAN1N6144US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 9.1V
- Voltage - Breakdown (Min):
- 11.4V
- Voltage - Clamping (Max) @ Ipp:
- 16.9V
- Current - Peak Pulse (10/1000µs):
- 88.8A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6144US/TR FAQ
1.How can I place an order for JAN1N6144US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6144US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6144US/TR reliable?
The price and inventory of JAN1N6144US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6144US/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6144US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6144US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6144US/TR?
JAN1N6144US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6144US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6144US/TR?
For technical support, including JAN1N6144US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6144US/TR requirements.
6.How does Aetrix verify that JAN1N6144US/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6144US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6144US/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6144US/TR?
All JAN1N6144US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6144US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6144US/TR part is unused and in its original packaging.
Return procedure for JAN1N6144US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6144US/TR Tags
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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