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Microchip Technology JAN1N6147US/TR
- Part No.:
- JAN1N6147US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6147US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,688
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Product details
Overview
JAN1N6147US/TR from Microsemi is a military-qualified, voidless hermetically sealed bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF package, with 12.2 V working standoff voltage (VWM), 15.20 V minimum breakdown voltage (VBR @ 75 mA), and 22.3 V clamping voltage (VC @ 67.3 A) for 10/1000 µs pulse - deployed in avionics power rail protection and MIL-STD-461E transient suppression.
For engineers reviewing the JAN1N6147US/TR datasheet, JAN1N6147US/TR pinout, JAN1N6147US/TR application, or JAN1N6147US/TR equivalent, this part delivers verified 1500 W peak pulse power, Category 1 metallurgical bonds, triple-layer passivation, -55°C to +175°C junction temperature range, and MIL-PRF-19500/516 qualification at JAN level - critical for high-reliability ESD/EFT/IEC61000-4-5 secondary lightning surge mitigation.
Technical Context
This bidirectional TVS operates without polarity marking and relies on avalanche breakdown across both directions to clamp transients symmetrically. Its hard-glass SQ-MELF construction enables stable thermal resistance (RθJEC = 5.0 °C/W) and eliminates voids that compromise hermeticity under thermal cycling.
It meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 levels for secondary lightning effects, with non-sensitive ESD behavior per MIL-STD-750 Method 1020 and inherent radiation hardness documented in MicroNote 050.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 12.2 V - maximum continuous dc/repetitive peak voltage applied without conduction; sets operating margin below clamping threshold. |
| VBR min | 15.20 V @ 75 mA - guaranteed avalanche onset voltage; defines minimum overvoltage detection threshold. |
| VC | 22.3 V @ 67.3 A - clamped voltage during 10/1000 µs surge; determines protected circuit's maximum stress level. |
| PPP | 1500 W - peak pulse power handling for standardized 10/1000 µs waveform; enables robust MIL-STD-461E compliance. |
| TJ/TSTG | -55°C to +175°C - extended junction/storage temperature range; supports operation in aerospace and downhole environments. |
| RθJEC | 5.0 °C/W - low thermal resistance from junction to end cap; allows efficient heat transfer to PCB copper or heatsink. |
| IPP max | 67.3 A - maximum non-repetitive peak current for 10/1000 µs pulse; defines surge current capacity before failure. |
Pinout & Package
SQ-MELF (Square End-Cap Metal Electrode Leadless Face) package: hermetically sealed voidless hard glass body with tungsten slugs and tin/lead-plated copper terminals; no polarity marking; weight ≈ 1100 mg; dimensions per Microsemi T4-LDS-0278-1 Rev. 2 (Page 7).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Common transient conduction path | No polarity - either terminal serves as anode or cathode depending on transient polarity; symmetric clamping behavior. |
| End Cap (both ends) | Thermal and electrical interface | Directly contacts PCB pads for simultaneous heat dissipation and low-inductance current path; requires compliant pad layout per datasheet Figure 7. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC-coupled or floating signal/power lines without polarity concerns. |
| Category 1 metallurgical bonds | Guarantees bond integrity under extreme thermal shock and mechanical vibration per MIL-PRF-19500/516. |
| Triple-layer passivation | Prevents surface leakage and moisture ingress in humid, salt-laden, or high-bias environments. |
| Voidless hermetic seal | Eliminates internal microvoids that cause outgassing or pressure-induced failure during altitude cycling. |
| MIL-PRF-19500/516 JAN qualification | Validated reliability for mission-critical applications including flight control, radar, and secure comms systems. |
Applications
| Aerospace Power Distribution | Military Radio Front-End |
|---|---|
Use Scenario: Protection of 12 V DC bus feeding flight control actuators against load dump and coupled lightning transients. IC Role / Device Role / Timing Role: Bidirectional TVS device clamping positive/negative surges to ≤22.3 V while sustaining 1500 W for 10/1000 µs. Use Value: Prevents latch-up or burnout in downstream DC-DC converters and motor drivers during MIL-STD-704F events. | Use Scenario: Shielding RF amplifier input stages from ESD and antenna-coupled EFT pulses in handheld tactical radios. IC Role / Device Role / Timing Role: Fast-response transient suppressor with <1 ns response time and low capacitance (<100 pF typical) preserving signal integrity. Use Value: Maintains receiver sensitivity and prevents front-end damage without degrading 30–512 MHz RF performance. |
| Avionics Sensor Interface | Naval Shipboard Control Systems |
Use Scenario: Guarding ARINC 429 data lines and analog sensor inputs (e.g., temperature, pressure) against induced transients in aircraft bays. IC Role / Device Role / Timing Role: Standoff-rated TVS with 12.2 V VWM placed upstream of interface ICs to avoid false triggering during normal operation. Use Value: Ensures uninterrupted data transmission and sensor accuracy under DO-160 Section 22 radiated susceptibility testing. | Use Scenario: Safeguarding PLC I/O modules in shipboard engine monitoring systems exposed to salt fog and electromagnetic interference. IC Role / Device Role / Timing Role: Hermetically sealed TVS rated for -55°C to +175°C operation and resistant to corrosion per MIL-STD-810G Method 509. Use Value: Delivers field-proven reliability in high-humidity, high-vibration marine environments where rework is impractical. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6147US | Same electrical specs but qualified to JANTXV level (enhanced screening, tighter parametric limits, 100% lot testing). | Required for programs demanding higher reliability assurance than JAN level (e.g., space-qualified subsystems). | Select when full JANTXV test documentation and traceability are mandated by system-level spec. |
| 1N6147AUS | Commercial-grade version; identical VWM, VBR, VC, and PPP, but not MIL-qualified; RoHS-compliant matte-tin plating available. | Suitable for non-military industrial or telecom infrastructure where cost and RoHS compliance outweigh MIL-spec requirements. | Choose for volume production outside defense supply chain, especially where lead-free assembly is required. |
Compared with JAN1N6147US/TR, JANTXV1N6147US adds screening rigor without altering clamping behavior, while 1N6147AUS removes military qualification but retains identical surge performance - enabling trade-offs between lifecycle assurance, cost, and regulatory compliance.
Availability
JAN1N6147US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, military radio front-end protection, avionics sensor interface, and naval shipboard control systems requiring stable component supply and long-term obsolescence management.
Supply support for JAN1N6147US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-temperature, and MIL-spec components.
The JAN1N6147US/TR belongs to Microsemi's legacy 1N61xxAUS TVS family, engineered specifically for military-grade transient suppression in harsh-environment electronics where failure is not an option.
FAQ
What is the clamping voltage of JAN1N6147US/TR under a 10/1000 µs surge?
The JAN1N6147US/TR has a maximum clamping voltage (VC) of 22.3 V when subjected to a 67.3 A peak pulse current with a 10/1000 µs waveform. This value is measured per MIL-STD-750 Method 3013 and ensures downstream circuitry remains within safe operating limits during standardized surge events. The JAN1N6147US/TR maintains this clamping performance across its full qualified temperature range (-55°C to +175°C).
Is JAN1N6147US/TR RoHS compliant?
No, JAN1N6147US/TR is not RoHS compliant. It uses traditional tin/lead plating on copper terminals, consistent with MIL-PRF-19500/516 requirements for JAN-level devices. RoHS-compliant matte-tin plating is only available on commercial-grade variants like 1N6147AUS - not on JAN1N6147US/TR. The JAN1N6147US/TR remains fully compliant with defense procurement directives requiring Pb-based finishes.
Does JAN1N6147US/TR require polarity-aware PCB layout?
No, JAN1N6147US/TR does not require polarity-aware PCB layout. As a bidirectional TVS, it exhibits symmetrical avalanche characteristics - either end functions identically as anode or cathode depending on transient polarity. The device carries no polarity marking, and its SQ-MELF package has identical end-cap geometry. This simplifies placement and eliminates orientation errors during automated assembly of the JAN1N6147US/TR.
What is the thermal resistance of JAN1N6147US/TR, and how does it affect PCB design?
The JAN1N6147US/TR has a junction-to-end-cap thermal resistance (RθJEC) of 5.0 °C/W. This low value means heat generated during surge events transfers efficiently from the silicon junction to the end caps - which must be soldered to adequately sized copper pads per Microsemi's recommended pad layout. For sustained operation near derated power limits, designers should ensure ≥1 cm² of 2-oz copper per end cap and avoid thermal isolation. This thermal behavior is intrinsic to the JAN1N6147US/TR's hard-glass, tungsten-slug construction.
How does JAN1N6147US/TR differ from commercial 1N6147AUS beyond qualification level?
Beyond MIL-PRF-19500/516 qualification, JAN1N6147US/TR differs from 1N6147AUS in terminal plating (tin/lead vs. optional RoHS matte-tin), screening (100% lot testing, enhanced burn-in), and traceability (full lot history per MIL-STD-9858). Electrically and physically, both share identical VWM (12.2 V), VBR (15.20 V min), VC (22.3 V), and SQ-MELF packaging. The JAN1N6147US/TR is not offered in RoHS-compliant form, whereas 1N6147AUS supports it - making the choice dependent on program-level compliance mandates, not performance.
JAN1N6147US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 12.2V
- Voltage - Breakdown (Min):
- 15.2V
- Voltage - Clamping (Max) @ Ipp:
- 22.3V
- Current - Peak Pulse (10/1000µs):
- 67.3A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6147US/TR FAQ
1.How can I place an order for JAN1N6147US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6147US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6147US/TR reliable?
The price and inventory of JAN1N6147US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6147US/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6147US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6147US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6147US/TR?
JAN1N6147US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6147US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6147US/TR?
For technical support, including JAN1N6147US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6147US/TR requirements.
6.How does Aetrix verify that JAN1N6147US/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6147US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6147US/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6147US/TR?
All JAN1N6147US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6147US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6147US/TR part is unused and in its original packaging.
Return procedure for JAN1N6147US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6147US/TR Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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