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Microchip Technology JAN1N6148US/TR
- Part No.:
- JAN1N6148US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6148US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,275
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Product details
Overview
JAN1N6148US/TR from Microsemi is a military-qualified, voidless hermetically sealed bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF glass package, rated for 1500 W peak pulse power (10/1000 µs), 13.7 V working standoff voltage (VWM), and 25.1 V clamping voltage (VC) at 59.8 A peak pulse current - deployed in avionics power bus protection and radar front-end surge suppression.
For engineers reviewing the JAN1N6148US/TR datasheet, JAN1N6148US/TR pinout, JAN1N6148US/TR application, or JAN1N6148US/TR equivalent, this page delivers verified MIL-PRF-19500/516 Level JAN TVS specifications, bidirectional clamping behavior, thermal derating curves, RoHS-compliant terminal plating options, and direct alternatives with validated VWM/VC/IPP alignment.
Technical Context
This device operates as a bidirectional avalanche diode-based TVS, leveraging Category 1 metallurgical bonds and hard-glass encapsulation to sustain repeated 10/1000 µs transients up to 1500 W without degradation. Its VWM = 13.7 V ensures compatibility with 12 V nominal systems while maintaining 25.1 V clamping at IPP = 59.8 A.
Thermal resistance from junction to end cap is 5.0 °C/W, enabling stable operation up to TJ = +175 °C; standby current is ≤10 µA at VWM, and temperature coefficient of breakdown voltage is +0.085 %/°C - critical for precision overtemperature margining in aerospace deployments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 13.7 V - maximum continuous reverse voltage before conduction; sets system-level DC operating margin for 12 V rail protection. |
| VC @ IPP | 25.1 V at 59.8 A - clamped voltage during 10/1000 µs surge; defines worst-case transient overvoltage seen by downstream ICs. |
| PPP | 1500 W - peak pulse power rating for standardized lightning-induced surge waveforms per IEC61000-4-5. |
| IPP | 59.8 A - maximum non-repetitive surge current the device safely clamps without failure. |
| TJ/TSTG | –55 °C to +175 °C - extended temperature range supports operation in missile guidance electronics and satellite power conditioning. |
| RθJEC | 5.0 °C/W - low thermal resistance enables efficient heat transfer to PCB copper or heatsink via end-cap mounting. |
| αV(BR) | +0.085 %/°C - predictable positive drift of breakdown voltage with temperature, simplifying high-temp design margining. |
Pinout & Package
Package: SQ-MELF (Square-End-Cap Metal Electrode Leadless Face), hermetically sealed voidless hard glass with tungsten slugs; terminals are tin/lead plated copper (RoHS matte-tin available on commercial grade only); polarity not marked due to bidirectional symmetry.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Bidirectional avalanche junction | No polarity marking required; either end functions identically as cathode or anode depending on transient polarity. |
| End Cap (both ends) | Thermal and electrical termination | Primary heat path to PCB; soldered directly to copper pads; requires full-surface pad layout per Microsemi drawing T4-LDS-0278-1, Page 7. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal delamination under thermal cycling; certified for >1000 cycles between –55 °C and +125 °C per MIL-STD-202. |
| Category 1 metallurgical bonds | Gold-tungsten intermetallic interface ensures <10−9 Ω contact resistance stability over 20+ year field life in space-grade applications. |
| Triple-layer passivation | Silicon nitride/silicon dioxide/titanium nitride stack prevents moisture ingress and surface leakage at VWM in humid environments. |
| MIL-PRF-19500/516 qualification | JAN level includes 100% lot testing for VBR, VC, IPP, and burn-in; traceable to individual wafer lots and assembly batches. |
Applications
| Avionics Power Bus Protection | Radar Front-End Surge Suppression |
|---|---|
Use Scenario: Protecting 28 V DC distribution lines in airborne mission computers from load dump and inductive switching spikes. IC Role / Device Role / Timing Role: Bidirectional clamping element placed across bus rails to limit transient overvoltage to <25.1 V during 10/1000 µs surges. Use Value: Prevents latch-up in FPGAs and ADCs by holding rail voltage within ±10% of 28 V during MIL-STD-1275B Class III events. |
Use Scenario: Shielding RF receiver LNAs and mixers from ESD and lightning-induced coupling on antenna feedlines. IC Role / Device Role / Timing Role: Fast-response TVS shunting transient energy before it reaches sensitive GaAs MMIC stages. Use Value: Maintains signal integrity by clamping sub-10 ns ESD pulses (IEC61000-4-2 Level 4) to <25.1 V without adding parasitic capacitance (>1 pF). |
| Tactical Vehicle Electronics | Satellite Power Conditioning |
Use Scenario: Safeguarding CAN bus transceivers and microcontrollers in armored vehicle control modules against ISO 7637-2 Pulse 5a/b surges. IC Role / Device Role / Timing Role: Primary line-to-ground TVS on 12 V supply input, mounted directly to chassis ground plane. Use Value: Absorbs 1500 W surges without degradation, meeting MIL-STD-461G CS115 requirements for conducted susceptibility. |
Use Scenario: Protecting DC-DC converter inputs in LEO satellite power management units exposed to single-event transients. IC Role / Device Role / Timing Role: Radiation-hardened TVS suppressing secondary ionization spikes induced by proton impacts in solar array regulators. Use Value: Inherent radiation tolerance (per MicroNote 050) avoids derating or shielding overhead; operates reliably at TJ = +175 °C in uncooled compartments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar bidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6148AUS | Commercial-grade version; same VWM (13.7 V), VC (25.1 V), IPP (59.8 A), but no MIL-PRF-19500/516 qualification or JAN-level screening. | Lacks burn-in, lot acceptance testing, and traceability required for defense prime BOMs; suitable for ground-test prototypes or non-flight hardware. | Select when cost sensitivity outweighs long-term reliability certification needs and environmental stress screening is not mandated. |
| JANTX1N6148US/TR | Same SQ-MELF package and electrical specs, but qualified to JANTX level (higher screening than JAN, including extended temperature cycling and vibration tests). | Approved for use in flight-critical subsystems where failure modes require higher confidence than JAN level provides. | Choose when program requirements specify JANTX-level reliability or when operating in extreme mechanical stress environments (e.g., helicopter-mounted systems). |
Compared with JAN1N6148US/TR, 1N6148AUS offers identical clamping performance at lower cost but lacks military screening, while JANTX1N6148US/TR adds enhanced mechanical robustness and broader environmental validation - making the JAN variant optimal for balanced cost/reliability in avionics and radar programs.
Availability
JAN1N6148US/TR is available at Aetrix Electronics and suitable for avionics power bus protection, radar front-end surge suppression, tactical vehicle electronics, and satellite power conditioning requiring stable component supply across extended product lifecycles.
Supply support for JAN1N6148US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and MIL-spec components.
The JAN1N6148US/TR belongs to Microsemi's legacy 1N61xxAUS TVS family, engineered specifically for military-grade transient suppression in harsh-environment electronics where failure is not an option.
FAQ
What is the clamping voltage of JAN1N6148US/TR at its rated peak pulse current?
The JAN1N6148US/TR has a maximum clamping voltage (VC) of 25.1 V when subjected to its rated peak pulse current (IPP) of 59.8 A under the standard 10/1000 µs waveform. This value is guaranteed per MIL-PRF-19500/516 test conditions and reflects worst-case voltage seen by protected circuitry during surge events. The clamping performance is consistent across the full operating temperature range of –55 °C to +175 °C.
Is JAN1N6148US/TR RoHS compliant?
JAN1N6148US/TR is not RoHS compliant, as it uses traditional tin/lead plating on its copper terminals - consistent with MIL-PRF-19500/516 JAN-level requirements for solderability and long-term reliability in high-reliability applications. RoHS-compliant matte-tin plating is available only on commercial-grade variants (e.g., 1N6148AUS), not on JAN-qualified parts.
Does JAN1N6148US/TR have polarity markings?
No, JAN1N6148US/TR does not have polarity markings because it is a bidirectional TVS device. Both ends function identically as either anode or cathode depending on the polarity of the transient event. The SQ-MELF package is symmetric, and the device must be mounted with both end caps soldered to matching PCB pads without orientation constraints.
What is the thermal resistance of JAN1N6148US/TR, and how does it affect PCB layout?
JAN1N6148US/TR has a junction-to-end-cap thermal resistance (RθJEC) of 5.0 °C/W. This low value requires direct thermal coupling to PCB copper - designers must use full-surface end-cap pads per Microsemi's recommended layout (T4-LDS-0278-1, Page 7) and avoid narrow traces or thermal relief that impede heat flow. Failure to do so risks exceeding TJ = +175 °C during repetitive surges.
How does JAN1N6148US/TR differ from JANTX1N6148US/TR?
JAN1N6148US/TR meets MIL-PRF-19500/516 JAN-level requirements, including 100% lot testing and burn-in. JANTX1N6148US/TR adds extended environmental screening - such as additional thermal cycling, mechanical shock, and vibration testing - per JANTX specification. Both share identical electrical parameters and SQ-MELF packaging, but JANTX is approved for higher-integrity applications like flight-critical avionics.
JAN1N6148US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 13.7V
- Voltage - Breakdown (Min):
- 17.1V
- Voltage - Clamping (Max) @ Ipp:
- 25.1V
- Current - Peak Pulse (10/1000µs):
- 59.8A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6148US/TR FAQ
1.How can I place an order for JAN1N6148US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6148US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6148US/TR reliable?
The price and inventory of JAN1N6148US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6148US/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6148US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6148US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6148US/TR?
JAN1N6148US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6148US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6148US/TR?
For technical support, including JAN1N6148US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6148US/TR requirements.
6.How does Aetrix verify that JAN1N6148US/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6148US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6148US/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6148US/TR?
All JAN1N6148US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6148US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6148US/TR part is unused and in its original packaging.
Return procedure for JAN1N6148US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6148US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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