Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology JAN1N6149AUS/TR

Part No.:
JAN1N6149AUS/TR
Manufacturer:
Microchip Technology
Category:
TVS Diodes
Package:
SQ-MELF, C
Datasheet:
AetrixJAN1N6149AUS/TR.pdf
Description:
BI-DIRECTIONAL TVS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,117

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

JAN1N6149AUS/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JAN level. It provides 15.2 V working standoff voltage (VWM), 19.0 V minimum breakdown voltage (V(BR)), 27.7 V clamping voltage (VC) at 54.2 A peak pulse current (IPP), and 1500 W peak pulse power for 10/1000 µs waveform-designed for lightning surge and ESD protection in avionics power interfaces.

For engineers reviewing the JAN1N6149AUS/TR datasheet, JAN1N6149AUS/TR pinout, JAN1N6149AUS/TR application, or JAN1N6149AUS/TR equivalent, key selection criteria include its military-grade reliability, bidirectional clamping behavior, hard-glass SQ-MELF package, and compliance with IEC61000-4-2/4-4/4-5 transient immunity standards.

Technical Context

This TVS operates bidirectionally with no polarity marking and relies on internal Category 1 metallurgical bonds for high-reliability junction integrity. Its voidless hermetic glass construction ensures stable electrical parameters across -55 °C to +175 °C junction temperature range and eliminates moisture-induced failure mechanisms common in plastic-packaged suppressors.

The device delivers 1500 W peak pulse power under standardized 10/1000 µs waveform while maintaining 5 µA standby current at VWM and 0.085 %/°C temperature coefficient of breakdown voltage-enabling predictable clamping performance in thermally varying military platforms.

Key Specifications

ParameterValue and Actual Design Meaning
VWM15.2 V - Maximum continuous DC or repetitive peak reverse voltage before conduction begins
V(BR) min19.0 V @ 65 mA - Guaranteed breakdown onset threshold under specified test current
VC @ IPP27.7 V @ 54.2 A - Clamped voltage during 10/1000 µs surge, defining maximum protected circuit stress
PPP1500 W - Peak impulse power handling capability per MIL-STD-883 method 3012
ID @ VWM5 µA - Leakage current at rated standoff voltage, critical for low-power sensor interface integrity
αV(BR)0.085 %/°C - Predictable drift of breakdown voltage over temperature, enabling accurate system-level margining
TJ Range-55 °C to +175 °C - Full operational junction temperature span validated per MIL-PRF-19500/516

Pinout & Package

Package: SQ-MELF (Square-End-Cap Metal Electrode Leadless Face), hermetically sealed voidless hard glass case with tungsten slugs and tin/lead-plated copper terminals. Dimensions: BD = 4.65–5.13 mm, BL = 5.21–6.22 mm, ECT = 0.48–0.71 mm.

Pin/TerminalCircuit RoleDesign Meaning
Anode/CathodeBidirectional terminal pairNo polarity marking; either end serves as anode or cathode depending on transient polarity-enables symmetric placement in AC-coupled or floating circuits
End CapThermal and electrical terminationDirect thermal path to PCB via soldered end cap; RθJEC = 5.0 °C/W enables high-power dissipation without heatsink

Key Features

FeatureDesign Value
Bidirectional clampingEnables single-device protection of AC lines or ungrounded differential buses without polarity concerns
Category 1 metallurgical bondsEnsures >1000 thermal cycles reliability and resistance to mechanical shock per MIL-STD-883
Voidless hermetic sealEliminates internal delamination risk under humidity and thermal cycling-critical for space and airborne systems
MIL-PRF-19500/516 qualificationJAN-level screening includes burn-in, temperature cycling, and life testing-validating long-term field reliability
SQ-MELF mechanical robustnessSquare-end-cap geometry prevents rolling during reflow and improves solder joint shear strength vs. round MELF

Applications

Aerospace Power DistributionAvionics Data Bus Protection

Use Scenario: Protecting 28 V DC aircraft bus feeders against induced lightning transients per DO-160 Section 22 Level 3.

IC Role / Device Role / Timing Role: Bidirectional TVS clamping line-to-ground surges up to 1500 W without polarity reversal constraints.

Use Value: Maintains <5 µA leakage at 15.2 V standoff to avoid loading sensitive bus monitoring circuits while clamping to 27.7 V.

Use Scenario: Shielding ARINC 429 receiver inputs from ESD events during maintenance or connector mating.

IC Role / Device Role / Timing Role: Fast-response transient suppressor absorbing IEC61000-4-2 ±8 kV contact discharge energy.

Use Value: 0.085 %/°C αV(BR) ensures stable clamping across cockpit temperature extremes (-40 °C to +70 °C).

Military Vehicle ECUsGround-Based Radar Power Supplies

Use Scenario: Safeguarding 24 V CAN/FlexRay power rails in tracked vehicle control units exposed to EMP and load dump.

IC Role / Device Role / Timing Role: High-energy TVS absorbing 10/1000 µs pulses up to 1500 W while surviving -55 °C cold start.

Use Value: Hermetic SQ-MELF package withstands vibration and humidity per MIL-STD-810G Method 514.6 Cat H.

Use Scenario: Protecting high-voltage DC supplies feeding T/R modules from secondary lightning effects per IEC61000-4-5.

IC Role / Device Role / Timing Role: Standoff-rated suppressor operating continuously at 15.2 V while clamping 54.2 A surges to 27.7 V.

Use Value: 175 °C max junction rating supports operation adjacent to RF power amplifiers without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
JANTX1N6149AUSJANTX screening adds extended temperature cycling and additional parametric testing beyond JAN requirementsRequired for programs specifying JANTX-level reliability documentation and traceabilitySelect when full JANTX qualification evidence (e.g., QPL listing, lot-specific test reports) is contractually mandated
1N6149AUS (commercial)Lacks MIL-PRF-19500/516 qualification; RoHS-compliant matte-tin plating availableSuitable only for non-military industrial applications where radiation hardness and extreme temperature survivability are not requiredSelect for cost-sensitive ground-based equipment with commercial-grade environmental requirements

Compared with JANTX1N6149AUS and commercial 1N6149AUS, the JAN1N6149AUS/TR offers verified JAN-level screening with documented MIL-PRF-19500/516 compliance-making it the only option approved for flight-critical subsystems requiring zero-failure tolerance and full traceability.

Availability

JAN1N6149AUS/TR is available at Aetrix Electronics and suitable for aerospace power distribution, avionics data bus protection, and military vehicle ECU designs requiring stable component supply under extended lead times and strict obsolescence management.

Supply support for JAN1N6149AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, discrete devices, and radiation-hardened components for defense, aerospace, and industrial markets.

The JAN1N6149AUS/TR belongs to Microsemi's military-qualified TVS diode family designed specifically for mission-critical transient suppression in environments demanding MIL-PRF-19500/516 compliance, hermetic reliability, and guaranteed parameter stability across extreme temperatures.

FAQ

What is the clamping voltage of JAN1N6149AUS/TR under a 10/1000 µs surge?

The JAN1N6149AUS/TR has a maximum clamping voltage (VC) of 27.7 V when subjected to a 54.2 A peak pulse current (IPP) under the standard 10/1000 µs waveform. This value is measured per MIL-STD-883 method 3012 and defines the upper voltage limit imposed on protected circuitry during transient events. The clamping performance remains stable across its full -55 °C to +175 °C junction temperature range due to its 0.085 %/°C temperature coefficient.

Is JAN1N6149AUS/TR compatible with lead-free reflow processes?

JAN1N6149AUS/TR is qualified for solder reflow at 260 °C for 10 seconds, meeting JEDEC J-STD-020 requirements for lead-free assembly. Its hermetic glass package and tungsten slug construction ensure no internal delamination or parameter shift during standard Pb-free reflow profiles. However, the standard termination is tin/lead; RoHS-compliant matte-tin plating is available only on commercial-grade variants-not on JAN-level parts like JAN1N6149AUS/TR.

Does JAN1N6149AUS/TR require polarity-aware PCB layout?

No, JAN1N6149AUS/TR does not require polarity-aware PCB layout because it is a bidirectional TVS diode with no anode/cathode marking. Its symmetrical construction allows either end to serve as the anode or cathode depending on transient polarity, making it ideal for AC-coupled lines, floating grounds, or differential signal paths. The SQ-MELF package has identical end caps, further simplifying automated placement and eliminating orientation verification during assembly.

How does JAN1N6149AUS/TR meet IEC61000-4-5 lightning surge requirements?

JAN1N6149AUS/TR meets IEC61000-4-5 by clamping 10/1000 µs combination wave surges to 27.7 V at 54.2 A, limiting energy delivered to downstream circuitry. Its 1500 W peak pulse power rating exceeds Level 3 (1 kV line-earth, 2 kV line-line) and Level 4 (2 kV line-earth, 4 kV line-line) requirements when used with appropriate series impedance. The device's hermetic construction and Category 1 metallurgical bonds ensure consistent performance across repeated surges without parameter drift.

What is the maximum steady-state power dissipation of JAN1N6149AUS/TR at 25 °C ambient?

At TA = 25 °C, the JAN1N6149AUS/TR has a steady-state power dissipation rating of 3.0 W. This value assumes adequate PCB thermal management-specifically, a controlled thermal resistance from mounting point to ambient that prevents junction temperature from exceeding 175 °C. Derating is linear above 150 °C end-cap temperature, reaching zero at 175 °C. For continuous operation, designers must verify board layout thermal performance using Figure 6 from the T4-LDS-0278-1 datasheet.

JAN1N6149AUS/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Package/Case:
SQ-MELF, C
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
-
Bidirectional Channels:
1
Voltage - Reverse Standoff (Typ):
15.2V
Voltage - Breakdown (Min):
19V
Voltage - Clamping (Max) @ Ipp:
27.7V
Current - Peak Pulse (10/1000µs):
54.2A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Military
Qualification:
MIL-PRF-19500/516
Mounting Type:
Surface Mount
Supplier Device Package:
C, SQ-MELF

JAN1N6149AUS/TR FAQ

1.How can I place an order for JAN1N6149AUS/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for JAN1N6149AUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JAN1N6149AUS/TR reliable?

The price and inventory of JAN1N6149AUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6149AUS/TR is usually 5 days.

3.What payment methods are accepted for JAN1N6149AUS/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6149AUS/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for JAN1N6149AUS/TR?

JAN1N6149AUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JAN1N6149AUS/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JAN1N6149AUS/TR?

For technical support, including JAN1N6149AUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6149AUS/TR requirements.

6.How does Aetrix verify that JAN1N6149AUS/TR is sourced from the original manufacturer or authorized distributors?

All JAN1N6149AUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6149AUS/TR meets industry standards.

7.What is the process for return or replacement of JAN1N6149AUS/TR?

All JAN1N6149AUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6149AUS/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JAN1N6149AUS/TR part is unused and in its original packaging.

Return procedure for JAN1N6149AUS/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

JAN1N6149AUS/TR Tags

  • JAN1N6149AUS/TR
  • JAN1N6149AUS/TR PDF
  • JAN1N6149AUS/TR Datasheet
  • JAN1N6149AUS/TR Specifications
  • JAN1N6149AUS/TR Images
  • Microchip Technology
  • Microchip Technology JAN1N6149AUS/TR
  • Buy JAN1N6149AUS/TR
  • JAN1N6149AUS/TR Price
  • JAN1N6149AUS/TR Distributor
  • JAN1N6149AUS/TR Supplier
  • JAN1N6149AUS/TR Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER