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Microchip Technology JAN1N6149US/TR
- Part No.:
- JAN1N6149US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6149US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,388
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Product details
Overview
JAN1N6149US/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JAN reliability level, with 15.2 V working standoff voltage (VWM), 19.0 V minimum breakdown voltage (V(BR)), and 27.7 V clamping voltage (VC) at 54.2 A peak pulse current (IPP) for 10/1000 µs waveform - deployed in avionics power rail protection.
For engineers reviewing the JAN1N6149US/TR datasheet, JAN1N6149US/TR pinout, JAN1N6149US/TR application, or JAN1N6149US/TR equivalent, this military-grade TVS delivers verified ESD/EFT/IEC61000-4-5 secondary lightning protection, Category 1 metallurgical bonds, triple-layer passivation, and RoHS-compliant tin-lead termination - critical for high-reliability aerospace and defense systems requiring zero-failure tolerance.
Technical Context
This device operates as a bidirectional clamping diode with no polarity marking, leveraging hard-glass hermetic construction and tungsten slugs for thermal robustness. Its 5.0 °C/W junction-to-end-cap thermal resistance enables stable 1500 W peak pulse power handling under 10/1000 µs transients at 25 °C ambient.
The JAN1N6149US/TR exhibits a +0.085 %/°C temperature coefficient of breakdown voltage (αV(BR)), ensuring predictable V(BR) drift across –55 to +175 °C operating range. Standby current remains ≤5 µA at 15.2 V VWM, supporting low-leakage system-level protection without compromising standby power integrity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 15.2 V - maximum continuous dc or repetitive peak voltage the device blocks without clamping; sets upper limit for protected circuit operating voltage. |
| V(BR) min | 19.0 V @ 65 mA - guaranteed minimum voltage at which avalanche conduction begins; defines turn-on threshold under surge conditions. |
| VC @ IPP | 27.7 V @ 54.2 A - clamped voltage during 10/1000 µs transient; determines maximum stress imposed on downstream ICs. |
| PPP | 1500 W - peak pulse power rating for 10/1000 µs waveform; quantifies transient energy absorption capability. |
| ID @ VWM | ≤5 µA - leakage current at rated standoff voltage; ensures minimal power loss and signal integrity in always-on protection paths. |
| αV(BR) | +0.085 %/°C - temperature coefficient of breakdown voltage; enables accurate V(BR) derating over –55 to +175 °C junction range. |
| RθJEC | 5.0 °C/W - thermal resistance from junction to end cap; supports direct heat sinking to PCB copper or chassis for sustained pulse handling. |
Pinout & Package
Package: SQ-MELF (C package), hermetically sealed voidless hard glass with tungsten slugs; terminals are tin/lead plated copper; no polarity marking due to bidirectional symmetry.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Bidirectional clamping node | Either end serves as cathode or anode depending on transient polarity; no orientation required during placement. |
| End Cap (both ends) | Thermal and electrical interface | Directly contacts PCB pads for both heat dissipation and current return path; requires full-surface solder wetting per MIL-STD-202. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture ingress and delamination risk over 20+ year field life in vacuum or humid environments. |
| Category 1 metallurgical bonds | Guarantees bond integrity under mechanical shock (100 g), vibration (10–2000 Hz), and thermal cycling (–55 to +125 °C). |
| Triple-layer passivation | Prevents surface leakage and corrosion-induced parameter drift in salt fog or airborne contaminant exposure. |
| MIL-PRF-19500/516 JAN qualification | Validated screening includes burn-in, temperature cycling, hermeticity testing, and lot acceptance test per military standard. |
| Non-sensitive to ESD | Withstands ≥25 kV HBM per MIL-STD-750 Method 1020 without parameter shift - eliminates ESD handling constraints in assembly. |
Applications
| Aerospace Power Distribution | Defense Radar Front-End |
|---|---|
Use Scenario: Protection of 28 V DC bus in satellite power management units against load dump and switching transients. IC Role / Device Role / Timing Role: Bidirectional clamping TVS placed directly across bus rails to clamp surges before they reach DC-DC converters and FPGAs. Use Value: 27.7 V clamping voltage ensures downstream 3.3 V/5 V logic remains within absolute maximum ratings during 1500 W transients. |
Use Scenario: Surge suppression on RF receiver LNA bias lines exposed to radar pulse coupling and EMP events. IC Role / Device Role / Timing Role: Low-leakage (≤5 µA) standoff protection that maintains bias stability while clamping nanosecond-scale EFT bursts. Use Value: Triple-layer passivation prevents parametric drift under high-humidity coastal deployment, preserving noise figure over mission lifetime. |
| Tactical Vehicle Data Bus | Missile Guidance Interface |
Use Scenario: I/O line protection on MIL-STD-1553B transceivers subjected to automotive ignition noise and alternator load dump. IC Role / Device Role / Timing Role: Fast-response bidirectional TVS absorbing 10/1000 µs pulses without affecting 1 Mbps data integrity. Use Value: 0.085 %/°C αV(BR) enables accurate clamping voltage prediction across –40 to +85 °C vehicle cabin temperature swings. |
Use Scenario: Protection of analog sensor inputs (e.g., gyroscope, accelerometer) in inertial measurement units against secondary lightning effects. IC Role / Device Role / Timing Role: Hermetically sealed, radiation-hardened TVS meeting IEC61000-4-5 Level 4 requirements for airborne platforms. Use Value: Voidless glass construction prevents outgassing in vacuum, satisfying NASA-STD-6016 contamination limits for guidance subsystems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6149US | Same electrical specs but qualified to JANTXV level with extended screening (e.g., 100% burn-in, enhanced thermal cycling). | Required for programs mandating JANTXV reliability level (e.g., DoD Class H systems); higher cost and longer lead time. | Select when full JANTXV qualification is contractually mandated; not drop-in for JAN-level BOMs without requalification. |
| 1N6149AUS | Commercial-grade version with identical VWM, V(BR), VC, and IPP, but no MIL-PRF-19500/516 qualification or screening. | Suitable for non-military industrial prototypes or ground-test equipment where reliability requirements are less stringent. | Use for cost-sensitive development phases; cannot substitute in flight or deployed hardware without redesign and re-qualification. |
Compared with JANTXV1N6149US and 1N6149AUS, the JAN1N6149US/TR offers the optimal balance of military-grade reliability (JAN level), proven field performance in space-qualified systems, and availability for production ramp - making it the preferred choice for certified aerospace hardware where failure is not an option.
Availability
JAN1N6149US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, defense radar front-end protection, tactical vehicle data bus hardening, and missile guidance interface design requiring stable component supply across long-life programs.
Supply support for JAN1N6149US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for aerospace, defense, and industrial markets.
The JAN1N6149US/TR belongs to Microsemi's military-qualified TVS family designed specifically for zero-failure transient protection in mission-critical systems operating under extreme environmental and electrical stress.
FAQ
What is the clamping voltage of JAN1N6149US/TR and how is it measured?
The clamping voltage of JAN1N6149US/TR is 27.7 V, measured at 54.2 A peak pulse current (IPP) under the standardized 10/1000 µs double-exponential transient waveform. This value is guaranteed per Microsemi's T4-LDS-0278-1 specification sheet and reflects the maximum voltage seen across the device during surge events - a critical parameter for ensuring downstream components remain within safe operating limits. The JAN1N6149US/TR achieves this clamping performance while maintaining bidirectional symmetry and hermetic reliability.
Is JAN1N6149US/TR RoHS compliant?
No, JAN1N6149US/TR is not RoHS compliant; its terminations use tin/lead plating per MIL-PRF-19500/516 requirements for military reliability. RoHS-compliant matte-tin versions are only available on commercial-grade variants (e.g., 1N6149AUS), not on JAN-level parts. The JAN1N6149US/TR meets legacy military specifications where leaded finishes are mandated for solder joint integrity and thermal fatigue resistance in high-reliability applications.
What does "JAN" mean in JAN1N6149US/TR?
"JAN" denotes Joint Army-Navy qualification - the baseline military reliability level under MIL-PRF-19500/516, including screening for hermeticity, temperature cycling, and electrical parameter verification. The JAN1N6149US/TR undergoes full JAN-level testing, distinguishing it from commercial (no prefix), JANTX (enhanced screening), or JANS (space-level) variants. This qualification makes the JAN1N6149US/TR suitable for ground and airborne defense systems where failure is unacceptable.
Can JAN1N6149US/TR be used in place of 1N6149AUS in a design?
JAN1N6149US/TR shares identical electrical parameters (VWM = 15.2 V, V(BR) = 19.0 V, VC = 27.7 V) with 1N6149AUS but adds MIL-PRF-19500/516 JAN qualification, hermetic sealing, and Category 1 metallurgical bonds. Substituting JAN1N6149US/TR for 1N6149AUS is electrically safe and improves reliability - however, the JAN1N6149US/TR requires adherence to military procurement controls and may impact cost, lead time, and documentation traceability in commercial designs.
What is the thermal resistance of JAN1N6149US/TR and why does it matter?
JAN1N6149US/TR has a junction-to-end-cap thermal resistance (RθJEC) of 5.0 °C/W, enabling efficient heat transfer from the silicon junction to the PCB pads or chassis. This low thermal resistance is essential for sustaining repeated 1500 W transients without thermal runaway - especially in compact layouts where airflow is limited. Designers must ensure full-surface soldering of both end caps to maximize thermal conduction, as specified in Microsemi's pad layout guidelines for the SQ-MELF package.
JAN1N6149US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 15.2V
- Voltage - Breakdown (Min):
- 19V
- Voltage - Clamping (Max) @ Ipp:
- 27.7V
- Current - Peak Pulse (10/1000µs):
- 54.2A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6149US/TR FAQ
1.How can I place an order for JAN1N6149US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6149US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6149US/TR reliable?
The price and inventory of JAN1N6149US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6149US/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6149US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6149US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6149US/TR?
JAN1N6149US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6149US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6149US/TR?
For technical support, including JAN1N6149US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6149US/TR requirements.
6.How does Aetrix verify that JAN1N6149US/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6149US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6149US/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6149US/TR?
All JAN1N6149US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6149US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6149US/TR part is unused and in its original packaging.
Return procedure for JAN1N6149US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6149US/TR Tags
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