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Microchip Technology JAN1N6150AUS/TR
- Part No.:
- JAN1N6150AUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6150AUS/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:6,663
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Product details
Overview
JAN1N6150AUS/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JAN level, with 16.7 V working standoff voltage (VWM), 20.9 V minimum breakdown voltage (V(BR)), and 30.5 V clamping voltage (VC) at 49.2 A peak pulse current (IPP) for 10/1000 µs waveform. It delivers 1500 W peak pulse power in a rugged hard-glass C-package and is used in military avionics power rail protection.
For engineers reviewing the JAN1N6150AUS/TR datasheet, JAN1N6150AUS/TR pinout, JAN1N6150AUS/TR application, or JAN1N6150AUS/TR equivalent, key selection criteria include its MIL-qualified reliability, bidirectional clamping behavior, 1500 W surge rating, -55°C to +175°C operating range, and compatibility with high-reliability PCB layouts requiring hermetic sealing and radiation hardness.
Technical Context
This TVS operates as a bidirectional voltage-clamping device with no polarity marking, relying on symmetrical avalanche breakdown in both directions to protect against positive and negative transients. Its hard-glass hermetic construction uses internal Category 1 metallurgical bonds and triple-layer passivation to ensure long-term stability under thermal cycling and radiation exposure.
The device is characterized by a low temperature coefficient of breakdown voltage (αV(BR) = 0.085 %/°C), enabling predictable clamping performance across its full -55°C to +175°C junction temperature range. Its 5.0 °C/W junction-to-end-cap thermal resistance supports reliable power dissipation during repetitive surges when mounted to thermally optimized copper pads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 16.7 V - Maximum continuous DC or repetitive peak voltage the device blocks without conduction. |
| V(BR) min | 20.9 V @ 50 mA - Minimum voltage at which avalanche breakdown initiates, defining turn-on threshold. |
| VC @ IPP | 30.5 V @ 49.2 A - Clamped voltage seen by protected circuit during 10/1000 µs surge, limiting stress. |
| PPP | 1500 W - Peak transient energy handling capability for standardized lightning-induced surges. |
| TJ Range | -55°C to +175°C - Full military-grade operating temperature envelope without derating loss. |
| RθJEC | 5.0 °C/W - Thermal resistance from junction to end cap, critical for mounting pad thermal design. |
| ID @ VWM | 5 µA - Leakage current at rated standoff voltage, ensuring minimal standby power impact. |
Pinout & Package
Package: C-package (SQ-MELF), hermetically sealed voidless hard glass with tungsten slugs and tin/lead-plated copper terminals. Dimensions: BD = 0.183–0.202 in (4.65–5.13 mm), BL = 0.205–0.245 in (5.21–6.22 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Common terminal pair | No polarity marking; either end serves as anode or cathode depending on transient polarity. |
| End Cap (both ends) | Current path / thermal interface | Directly contacts PCB pads for electrical conduction and heat transfer; requires full-surface soldering. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC-coupled or floating signal/power lines without polarity concerns. |
| Voidless hermetic seal | Eliminates moisture ingress and internal delamination risk over decades of field operation in harsh environments. |
| Category 1 metallurgical bonds | Guarantees bond integrity under mechanical shock, thermal cycling, and radiation exposure per MIL-PRF-19500/516. |
| MIL-PRF-19500/516 JAN qualification | Validated screening includes burn-in, temperature cycling, and life testing-required for flight-critical systems. |
| Radiation hardness | Inherently resistant to total ionizing dose (TID) per MicroNote 050, supporting space and nuclear applications. |
Applications
| Aerospace Power Distribution | Military Vehicle Data Buses |
|---|---|
Use Scenario: Protecting 28 V DC power rails in satellite power conditioning units from load dump and ESD events. IC Role / Device Role / Timing Role: Bidirectional TVS clamping transient overvoltage before it reaches DC-DC converters and FPGAs. Use Value: Prevents latch-up and gate oxide damage in downstream silicon using 30.5 V clamping at 49.2 A, within 1500 W surge limit. | Use Scenario: Shielding RS-485 and MIL-STD-1553B data lines in armored vehicle control modules from EFT and lightning-induced surges. IC Role / Device Role / Timing Role: Fast-response voltage clamp absorbing IEC61000-4-4 bursts and secondary lightning effects per IEC61000-4-5. Use Value: Maintains signal integrity with <5 µA leakage at 16.7 V, while surviving >100,000 surge cycles due to hard-glass robustness. |
| Naval Radar Front-Ends | Nuclear Facility Sensor Interfaces |
Use Scenario: Safeguarding RF amplifier bias supplies in shipboard radar transceivers exposed to EMP and switching transients. IC Role / Device Role / Timing Role: Standoff-rated TVS suppressing fast-rising transients (<1 ns rise time) before they couple into sensitive analog stages. Use Value: Leverages 0.085 %/°C αV(BR) to maintain stable clamping across wide ambient swings (-55°C to +70°C deck environments). | Use Scenario: Isolating thermocouple and RTD inputs in reactor monitoring systems where failure is unacceptable. IC Role / Device Role / Timing Role: Hermetically sealed transient suppressor providing fail-safe protection in high-radiation, high-humidity containment zones. Use Value: Delivers inherent TID hardness and zero moisture sensitivity-no conformal coating required per MicroNote 050. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTX1N6150AUS | JANTX-level screening adds extended temperature cycling and additional lot acceptance tests beyond JAN. | Suitable for programs requiring higher reliability assurance than JAN but not full JANS radiation testing. | Select when procurement specs mandate JANTX qualification and budget allows for added screening cost. |
| 1N6150AUS | Commercial-grade version with same electrical specs but no MIL-PRF-19500/516 qualification or radiation hardness data. | Applicable only in non-military industrial systems where hermeticity and TID tolerance are not required. | Choose only for cost-sensitive prototypes or commercial subsystems with relaxed environmental requirements. |
Compared with JANTX1N6150AUS, JAN1N6150AUS/TR offers sufficient reliability for most flight hardware without JANTX's extended test overhead; versus 1N6150AUS, it provides verified hermeticity, radiation tolerance, and MIL-qualified traceability essential for defense deployments.
Availability
JAN1N6150AUS/TR is available at Aetrix Electronics and suitable for aerospace power distribution, military vehicle data buses, naval radar front-ends, and nuclear facility sensor interfaces requiring stable component supply with full MIL-qualified traceability.
Supply support for JAN1N6150AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JAN1N6150AUS/TR belongs to Microsemi's military-qualified TVS family engineered specifically for survivability in extreme environments-including radiation exposure, thermal shock, and high-humidity sealed enclosures.
FAQ
What is the clamping voltage of JAN1N6150AUS/TR at its rated peak pulse current?
The JAN1N6150AUS/TR has a maximum clamping voltage (VC) of 30.5 V when subjected to its rated peak pulse current (IPP) of 49.2 A under the standard 10/1000 µs waveform. This value is measured per MIL-PRF-19500/516 test conditions and ensures downstream circuitry remains below safe voltage thresholds during surge events. The clamping performance is stable across temperature due to its 0.085 %/°C breakdown voltage coefficient.
Is JAN1N6150AUS/TR RoHS compliant?
No, JAN1N6150AUS/TR is not RoHS compliant. Its terminations use tin/lead plating per MIL-PRF-19500/516 requirements for solderability and reliability in high-reliability applications. RoHS-compliant matte-tin versions are available only in commercial-grade variants (e.g., 1N6150AUS), not in JAN-qualified parts like JAN1N6150AUS/TR.
Does JAN1N6150AUS/TR have polarity markings?
No, JAN1N6150AUS/TR has no polarity markings because it is a bidirectional TVS. Both ends are electrically identical and function as either anode or cathode depending on the polarity of the transient event. This eliminates orientation errors during automated placement and simplifies layout for AC-coupled or floating circuits.
What is the thermal resistance specification for JAN1N6150AUS/TR?
JAN1N6150AUS/TR has a junction-to-end-cap thermal resistance (RθJEC) of 5.0 °C/W. This parameter governs how effectively heat generated during surge events transfers from the silicon junction to the soldered end caps. Proper PCB pad design-using minimum 0.205 in × 0.245 in copper areas per end cap-is required to maintain junction temperature within the -55°C to +175°C rating during repetitive 1500 W pulses.
How does JAN1N6150AUS/TR differ from the non-A version (e.g., JAN1N6150US)?
JAN1N6150AUS/TR features tighter voltage tolerances: its minimum breakdown voltage (20.9 V) and clamping voltage (30.5 V) are specified with higher precision than the non-A version, which has 5% higher VC, 5% lower minimum V(BR), and 5% lower IPP. The "A" suffix denotes improved consistency for critical military applications where clamping predictability directly impacts system-level surge margin.
JAN1N6150AUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 16.7V
- Voltage - Breakdown (Min):
- 20.9V
- Voltage - Clamping (Max) @ Ipp:
- 30.5V
- Current - Peak Pulse (10/1000µs):
- 49.2A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6150AUS/TR FAQ
1.How can I place an order for JAN1N6150AUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6150AUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6150AUS/TR reliable?
The price and inventory of JAN1N6150AUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6150AUS/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6150AUS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6150AUS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6150AUS/TR?
JAN1N6150AUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6150AUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6150AUS/TR?
For technical support, including JAN1N6150AUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6150AUS/TR requirements.
6.How does Aetrix verify that JAN1N6150AUS/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6150AUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6150AUS/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6150AUS/TR?
All JAN1N6150AUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6150AUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6150AUS/TR part is unused and in its original packaging.
Return procedure for JAN1N6150AUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6150AUS/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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