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Microchip Technology JAN1N6150US/TR
- Part No.:
- JAN1N6150US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6150US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:6,337
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Product details
Overview
JAN1N6150US/TR from Microsemi is a military-qualified, voidless hermetically sealed bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF package, rated for 1500 W peak pulse power (10/1000 µs), 16.7 V working standoff voltage (VWM), and 30.5 V clamping voltage (VC) at 49.2 A peak pulse current - deployed in avionics power rail protection and missile guidance interface circuits.
For engineers reviewing the JAN1N6150US/TR datasheet, JAN1N6150US/TR pinout, JAN1N6150US/TR application, or JAN1N6150US/TR equivalent, key selection criteria include MIL-PRF-19500/516 qualification level (JAN), bidirectional surge capability, glass-body thermal resistance (5.0 °C/W), and IEC61000-4-5 lightning secondary-effect compliance.
Technical Context
This device operates as a bidirectional voltage-clamping protector with no polarity marking, leveraging hard-glass construction and Category 1 metallurgical bonds to sustain repeated 10/1000 µs transients up to 1500 W without degradation. Its breakdown voltage is 20.9 V minimum at 50 mA test current, with temperature coefficient of 0.085 %/°C.
Designed for high-reliability environments, it supports operation from −55 °C to +175 °C junction temperature, features RoHS-compliant matte-tin plating (commercial only), and exhibits <5 µA standby current at VWM, enabling low-leakage protection in always-on military subsystems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 16.7 V - maximum continuous reverse/forward voltage before conduction begins; sets operating margin for 24 V DC systems. |
| VC @ IPP | 30.5 V at 49.2 A - clamped voltage during 10/1000 µs surge; limits downstream IC stress to safe levels. |
| PPP | 1500 W - peak transient energy handling capacity; meets MIL-STD-1275B surge requirements. |
| TJ Range | −55 °C to +175 °C - enables deployment in engine bay, radar front-end, and space-grade electronics. |
| RθJEC | 5.0 °C/W - low thermal resistance from junction to end cap; supports high-power pulse dissipation without heatsink. |
| ID @ VWM | 5 µA - ultra-low leakage ensures minimal standby power loss in battery-backed mission-critical circuits. |
Pinout & Package
SQ-MELF (Square-End-Cap Metal Electrode Leadless Face) glass package with two symmetrical end-cap terminals; hermetically sealed, voidless construction; no polarity marking; weight ≈1100 mg; dimensions per Microsemi T4-LDS-0278-1 Rev. 2 (BD: 4.65–5.13 mm, BL: 5.21–6.22 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| End Cap A | Anode/Cathode (bidirectional) | Either terminal serves as anode or cathode depending on transient polarity; no orientation required during placement. |
| End Cap B | Anode/Cathode (bidirectional) | Electrically identical to End Cap A; symmetric layout simplifies PCB routing and eliminates assembly errors. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Protects AC-coupled and floating signal lines without polarity constraints or external diode pairing. |
| Category 1 metallurgical bonds | Ensures mechanical integrity under shock/vibration per MIL-STD-883, critical for launch vehicle and airborne platforms. |
| Voidless hermetic seal | Eliminates internal moisture and particle migration, preventing parametric drift over 20+ year service life. |
| JAN reliability level | Qualified to MIL-PRF-19500/516 with full lot traceability, burn-in, and radiation hardness per MicroNote 050. |
Applications
| Avionics Power Distribution | Missile Guidance Interface |
|---|---|
Use Scenario: Protection of 28 V DC bus against load dump and inductive switching spikes in flight control computers. IC Role / Device Role / Timing Role: Bidirectional TVS clamping element placed directly across input rails upstream of DC/DC converters. Use Value: Limits transient excursions to ≤30.5 V, preserving input stage MOSFETs and enabling compliance with DO-160 Section 22 Level 3. | Use Scenario: Shielding analog sensor inputs (e.g., gyros, accelerometers) from ESD and radiated coupling in seeker electronics. IC Role / Device Role / Timing Role: Low-leakage (<5 µA), high-VWM protector at signal conditioning front-end. Use Value: Maintains signal integrity while surviving ±15 kV contact ESD (IEC61000-4-2) without latch-up or parameter shift. |
| Tactical Radio Front-End | Naval Radar Power Supply |
Use Scenario: Guarding RF power amplifier bias lines against antenna-coupled lightning-induced surges. IC Role / Device Role / Timing Role: Standoff-rated TVS shunting transient energy before reaching GaN HEMT gate drivers. Use Value: Withstands 1500 W pulses per IEC61000-4-5 Level 4, reducing field failure rate by >99% vs. non-hermetic alternatives. | Use Scenario: Protecting 115 V AC-to-DC rectifier outputs in shipboard radar transmitters exposed to salt fog and thermal cycling. IC Role / Device Role / Timing Role: High-temperature-stable (−55 °C to +175 °C) clamping device mounted directly on heat-conductive chassis. Use Value: RθJEC = 5.0 °C/W enables direct thermal path to metal enclosure, eliminating need for thermal pads or adhesives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTX1N6150US | JANTX qualification level; same electrical specs but higher screening (burn-in, temperature cycling) than JAN. | Required for programs specifying JANTX-level reliability (e.g., DoD prime contracts with stricter lot acceptance). | Select when full MIL-PRF-19500/516 JANTX testing and documentation are mandated. |
| 1N6150AUS | Commercial-grade version; identical VWM, VC, and PPP, but not MIL-qualified and lacks radiation hardness data. | Suitable for industrial test equipment or commercial aerospace prototypes where cost and lead time outweigh full qualification needs. | Choose for non-mission-critical development boards or volume production with relaxed reliability requirements. |
Compared with JANTX1N6150US and 1N6150AUS, JAN1N6150US/TR delivers verified JAN-level screening and traceability without JANTX cost premium, while offering full radiation tolerance and hermetic reliability unattainable in commercial variants.
Availability
JAN1N6150US/TR is available at Aetrix Electronics and suitable for avionics power distribution, missile guidance interface, and naval radar power supply applications requiring stable component supply, long-term obsolescence management, and full MIL-PRF-19500/516 compliance.
Supply support for JAN1N6150US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, hermetic, and MIL-qualified components.
The JAN1N6150US/TR belongs to Microsemi's legacy 1N61xxAUS TVS family, engineered specifically for military-grade transient suppression in harsh-environment electronics where failure is not an option.
FAQ
What is the clamping voltage of JAN1N6150US/TR at its rated peak pulse current?
The JAN1N6150US/TR has a maximum clamping voltage (VC) of 30.5 V at 49.2 A peak pulse current (IPP) for a 10/1000 µs waveform. This value is measured under standardized surge conditions and defines the upper voltage limit imposed on protected circuitry during transient events. The clamping performance is guaranteed across the full qualified temperature range (−55 °C to +175 °C) and is integral to the device's compliance with MIL-STD-461 and IEC61000-4-5.
Is JAN1N6150US/TR RoHS compliant?
No, JAN1N6150US/TR is not RoHS compliant. Per Microsemi T4-LDS-0278-1 Rev. 2, RoHS-compliant matte-tin plating is available only on commercial-grade versions (e.g., 1N6150AUS). The JAN1N6150US/TR uses standard tin/lead plating to meet MIL-PRF-19500/516 process and reliability requirements, including solderability after extended storage and thermal shock survivability.
What does the "TR" suffix indicate in JAN1N6150US/TR?
The "TR" suffix in JAN1N6150US/TR denotes tape-and-reel packaging per EIA-481-B standard, enabling automated SMT placement. It does not alter electrical or reliability specifications. The base part JAN1N6150US remains unchanged; "TR" solely specifies packaging format and is consistent with Microsemi's nomenclature for surface-mount military devices in SQ-MELF configuration.
How does JAN1N6150US/TR differ from the non-"A" version (e.g., JAN1N6150US)?
JAN1N6150US/TR is the "A" version, meaning it meets tighter voltage tolerances: minimum breakdown voltage is 20.9 V (vs. 19.8 V for non-A), clamping voltage is lower (30.5 V vs. 32.0 V), and peak pulse current is higher (49.2 A vs. 46.8 A). These improvements stem from tighter process control and are documented in the Electrical Characteristics table of T4-LDS-0278-1 Rev. 2.
Can JAN1N6150US/TR be used in place of JAN1N6149US/TR?
No - JAN1N6150US/TR and JAN1N6149US/TR are distinct parts with different standoff voltages (16.7 V vs. 15.2 V), clamping voltages (30.5 V vs. 27.7 V), and breakdown thresholds (20.9 V vs. 19.0 V). Substitution requires circuit revalidation because the 1.5 V VWM difference affects margin against normal operating transients and may cause premature conduction or insufficient protection. Always verify compatibility using the full Electrical Characteristics table.
JAN1N6150US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 16.7V
- Voltage - Breakdown (Min):
- 20.9V
- Voltage - Clamping (Max) @ Ipp:
- 30.5V
- Current - Peak Pulse (10/1000µs):
- 49.2A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6150US/TR FAQ
1.How can I place an order for JAN1N6150US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6150US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6150US/TR reliable?
The price and inventory of JAN1N6150US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6150US/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6150US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6150US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6150US/TR?
JAN1N6150US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6150US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6150US/TR?
For technical support, including JAN1N6150US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6150US/TR requirements.
6.How does Aetrix verify that JAN1N6150US/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6150US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6150US/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6150US/TR?
All JAN1N6150US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6150US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6150US/TR part is unused and in its original packaging.
Return procedure for JAN1N6150US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6150US/TR Tags
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