Microchip Technology JAN1N6151US/TR
- Part No.:
- JAN1N6151US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6151US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

Inventory:6,862
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Product details
Overview
JAN1N6151US/TR from Microsemi is a military-qualified, voidless hermetically sealed bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF package, rated for 1500 W peak pulse power (10/1000 µs), 18.2 V working standoff voltage (VWM), and 33.3 V clamping voltage (VC) at 45 A peak pulse current. It operates across –55 °C to +175 °C and is used in high-reliability avionics power rail protection.
For engineers reviewing the JAN1N6151US/TR datasheet, JAN1N6151US/TR pinout, JAN1N6151US/TR application, or JAN1N6151US/TR equivalent, key selection criteria include its MIL-PRF-19500/516 JAN-level qualification, bidirectional clamping behavior, glass-body thermal resistance (5.0 °C/W), and IEC61000-4-2/4-4/4-5 compliance for ESD, EFT, and lightning surge immunity.
Technical Context
This device functions as a voltage-clamped shunt protector with symmetric bidirectional breakdown, enabling suppression of both positive and negative transients without polarity sensitivity. Its hard-glass construction uses internal Category 1 metallurgical bonds and triple-layer passivation to ensure robustness under repeated surge stress and radiation-hardened operation per MicroNote 050.
The JAN1N6151US/TR exhibits a temperature coefficient of breakdown voltage (αVBR) of 0.09 %/°C and linearly derates from full 1500 W pulse power at 25 °C to zero at 175 °C junction temperature. Standby current remains ≤5 µA at 18.2 V VWM, confirming low leakage in standby operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power (10/1000 µs) | 1500 W - sustains single high-energy surges without failure in aerospace power interfaces |
| Working Standoff Voltage (VWM) | 18.2 V - maximum continuous DC/repetitive voltage before conduction begins |
| Clamping Voltage (VC @ IPP) | 33.3 V at 45 A - limits transient overvoltage to safe levels for downstream 24 V logic or analog circuitry |
| Breakdown Voltage (VBR @ IBR) | 22.8 V at 50 mA - defines onset of avalanche conduction with tight tolerance control |
| Operating Temperature Range | –55 °C to +175 °C - supports deployment in engine bay, satellite payload, and missile guidance systems |
| Thermal Resistance (Junction-to-End Cap) | 5.0 °C/W - enables direct heat transfer to PCB copper or heatsink via end-cap mounting |
Pinout & Package
SQ-MELF (Square-End-Cap Metal Electrode Leadless Face) package: hermetically sealed voidless hard glass body with tungsten slugs and tin/lead-plated copper terminals; no polarity marking; weight ≈1100 mg; dimensions per Microsemi T4-LDS-0278-1 Rev. 2 (BD: 0.183–0.202", BL: 0.205–0.245").
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Surge current path terminal | Both ends function identically; no polarity-enables placement flexibility on PCB without orientation check |
| End Cap (both ends) | Thermal and electrical interface | Direct solder attachment provides low-inductance surge path and primary heat dissipation route to board copper |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Protects AC-coupled or floating signal lines without external diode pairing or polarity constraints |
| Category 1 metallurgical bonds | Ensures mechanical integrity and bond reliability under thermal cycling and shock in flight-critical systems |
| Voidless hermetic glass seal | Prevents moisture ingress and long-term parameter drift in humid or vacuum environments |
| MIL-PRF-19500/516 JAN qualification | Validates screening, testing, and traceability for use in U.S. Department of Defense procurement |
Applications
| Aerospace Power Distribution | Avionics Sensor Interface |
|---|---|
Use Scenario: Protection of 24 V DC bus against load dump and lightning-induced surges in UAV flight control units. IC Role / Device Role / Timing Role: Shunt TVS device clamping transient overvoltages above 33.3 V while diverting up to 45 A peak current. Use Value: Prevents latch-up or burnout in PMICs and microcontrollers by limiting rail excursion to safe margins during MIL-STD-461G CS115 events. | Use Scenario: Shielding analog sensor inputs (e.g., RTD, thermocouple) from ESD events during ground handling or maintenance. IC Role / Device Role / Timing Role: Bidirectional voltage clamp placed at connector entry point to absorb ±8 kV contact discharge per IEC61000-4-2 Level 4. Use Value: Maintains signal integrity below 18.2 V standoff threshold while ensuring sub-100 ns response time to preserve sensor accuracy. |
| Military Radio Front-End | Missile Guidance Signal Conditioning |
Use Scenario: Guarding RF amplifier bias rails against induced transients from nearby radar pulses or EMP exposure. IC Role / Device Role / Timing Role: Fast-response TVS suppressing nanosecond-scale voltage spikes before they reach GaAs FET bias networks. Use Value: Enables reliable operation under MIL-STD-464C electromagnetic environmental effects (E3) requirements without derating. | Use Scenario: Protecting precision ADC reference inputs and op-amp stages in inertial measurement units exposed to launch vibration and thermal shock. IC Role / Device Role / Timing Role: Low-leakage (≤5 µA) bidirectional suppressor maintaining stable 18.2 V standoff during extended mission durations. Use Value: Guarantees parametric stability across –55 °C to +175 °C with no parameter shift due to hermetic sealing and Category 1 bonding. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6151US | Same electrical specs but JANTXV-level screening (enhanced burn-in, life test, and lot acceptance); higher cost and longer lead time | Required for space-grade or critical flight hardware where extended reliability validation is mandated | Select when full JANTXV qualification documentation and traceability are contractually required |
| 1N6151AUS | Commercial-grade version; identical VWM, VC, and PPP ratings but no MIL-PRF-19500/516 qualification or radiation hardness data | Suitable for non-military industrial controls or test equipment where cost and availability outweigh qualification needs | Choose for prototyping or commercial derivatives where JAN-level screening is unnecessary |
Compared with JANTXV1N6151US and 1N6151AUS, the JAN1N6151US/TR delivers verified JAN-level reliability with documented MIL-PRF-19500/516 compliance and radiation hardness-making it the only option qualified for deployed tactical systems requiring DoD traceability and survivability under extreme environmental stress.
Availability
JAN1N6151US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, avionics sensor interface, military radio front-end, and missile guidance signal conditioning requiring stable component supply and full military traceability.
Supply support for JAN1N6151US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-temperature, and MIL-spec components.
The JAN1N6151US/TR belongs to Microsemi's legacy 1N61xxAUS TVS family, engineered specifically for military-grade transient suppression in harsh-environment electronics where failure is not an option.
FAQ
What is the clamping voltage of JAN1N6151US/TR and how does it protect downstream circuitry?
The JAN1N6151US/TR has a maximum clamping voltage (VC) of 33.3 V at 45 A peak pulse current (10/1000 µs). This ensures that during a surge event, the voltage seen by protected components-such as 24 V-rated PMICs or microcontrollers-never exceeds 33.3 V, staying well within safe operating limits. Its fast response and symmetric bidirectional structure allow it to clamp both polarities equally, making JAN1N6151US/TR ideal for ungrounded or floating bus architectures common in avionics.
Is JAN1N6151US/TR RoHS compliant?
No, JAN1N6151US/TR is not RoHS compliant. Per Microsemi T4-LDS-0278-1 Rev. 2, RoHS-compliant versions (e3 marking) are available only for commercial-grade variants (e.g., 1N6151AUS), not for JAN-level parts. The JAN1N6151US/TR uses tin/lead plating on copper terminals and is manufactured to meet MIL-PRF-19500/516 requirements, which permit Pb-containing finishes for reliability-critical applications.
What does the "TR" suffix in JAN1N6151US/TR indicate?
The "TR" suffix in JAN1N6151US/TR denotes tape-and-reel packaging per EIA-481-B standard, enabling automated SMT placement. This differs from bulk or ammo-pack options and confirms the part is supplied in industry-standard carrier tape with sprocket holes, 12 mm tape width, and specified reel quantities. All electrical and reliability specifications of JAN1N6151US/TR remain identical to the base JAN1N6151US part.
How does JAN1N6151US/TR differ from the non-"A" version (e.g., JAN1N6151US)?
The "A" in JAN1N6151US/TR indicates tighter voltage tolerances: minimum breakdown voltage is 22.8 V (vs. 5% lower for non-A), clamping voltage is 33.3 V (vs. 5% higher for non-A), and peak pulse current is 45 A (vs. 5% lower for non-A). These improvements result from enhanced process control and screening-making JAN1N6151US/TR more precise and robust for mission-critical applications than the baseline JAN1N6151US.
Can JAN1N6151US/TR be used in place of axial-leaded 1N6151 parts?
No-JAN1N6151US/TR is a surface-mount SQ-MELF device, while axial-leaded 1N6151 parts use through-hole TO-204AA (DO-4) packaging. Although electrically similar, their mechanical form, thermal path, and PCB layout requirements differ significantly. Substituting JAN1N6151US/TR for an axial part requires redesigning the footprint, revalidating thermal performance, and verifying mechanical retention-so it is not a drop-in replacement.
JAN1N6151US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 18.2V
- Voltage - Breakdown (Min):
- 22.8V
- Voltage - Clamping (Max) @ Ipp:
- 33.3V
- Current - Peak Pulse (10/1000µs):
- 45A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6151US/TR FAQ
1.How can I place an order for JAN1N6151US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6151US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6151US/TR reliable?
The price and inventory of JAN1N6151US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6151US/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6151US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6151US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6151US/TR?
JAN1N6151US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6151US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6151US/TR?
For technical support, including JAN1N6151US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6151US/TR requirements.
6.How does Aetrix verify that JAN1N6151US/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6151US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6151US/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6151US/TR?
All JAN1N6151US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6151US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6151US/TR part is unused and in its original packaging.
Return procedure for JAN1N6151US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6151US/TR Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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