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Microchip Technology JAN1N6152US/TR
- Part No.:
- JAN1N6152US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6152US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
JAN1N6152US/TR from Microsemi is a voidless hermetically sealed, bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JAN level. It provides 20.6 V working standoff voltage (VWM), 25.7 V minimum breakdown voltage (V(BR)), 37.4 V clamping voltage (VC) at 40.1 A peak pulse current (IPP), and 1500 W peak pulse power for 10/1000 µs waveform - deployed in avionics power bus protection.
For engineers reviewing the JAN1N6152US/TR datasheet, JAN1N6152US/TR pinout, JAN1N6152US/TR application, or JAN1N6152US/TR equivalent, key selection criteria include its military-grade reliability, bidirectional surge suppression capability, hard-glass SQ-MELF package, Category 1 metallurgical bonds, and IEC61000-4-2/-4-4/-4-5 compliance for ESD, EFT, and lightning-induced transients.
Technical Context
This TVS operates bidirectionally with no polarity marking and is designed for high-reliability DC power rail protection where failure is unacceptable. Its hard-glass SQ-MELF construction enables stable thermal performance with 5.0 °C/W junction-to-end-cap thermal resistance and operation across –55 °C to +175 °C junction temperature range.
The device delivers precise transient clamping via controlled avalanche breakdown, with 0.09 %/°C temperature coefficient of V(BR) and ≤5 µA standby current at VWM. It sustains 1500 W peak pulse power under standardized 10/1000 µs impulse while maintaining <37.4 V clamping voltage up to 40.1 A IPP - critical for safeguarding downstream analog and digital circuitry.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 20.6 V - maximum continuous DC or repetitive peak voltage the device blocks without conduction |
| V(BR) min | 25.7 V @ 50 mA - guaranteed avalanche initiation threshold ensures predictable turn-on during overvoltage events |
| VC @ IPP | 37.4 V @ 40.1 A - clamped voltage during 10/1000 µs surge limits stress on protected ICs |
| PPP | 1500 W - peak transient energy handling capacity for MIL-STD-461/DO-160-level surges |
| ID @ VWM | ≤5 µA - ultra-low leakage preserves system efficiency and battery life in always-on circuits |
| TJ Range | –55 °C to +175 °C - supports operation in extreme environments including aerospace and downhole systems |
| αV(BR) | 0.09 %/°C - low drift ensures stable clamping performance across wide temperature excursions |
Pinout & Package
Package: SQ-MELF (Square-End-Cap Metal Electrode Leadless Face), hermetically sealed voidless hard glass with tungsten slugs; terminals are tin/lead plated copper; weight ≈1100 mg; dimensions per Microsemi T4-LDS-0278-1 Rev. 2.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Transient current path | No polarity marking - either terminal serves as anode or cathode depending on transient polarity |
| End cap (both ends) | Thermal interface | Direct junction-to-mounting-surface heat transfer path with RθJEC = 5.0 °C/W |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional TVS architecture | Protects AC-coupled and floating DC rails without polarity constraints or external diode pairing |
| Category 1 metallurgical bonds | Ensures mechanical integrity and bond-wire reliability under shock/vibration in flight-critical systems |
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination risks over 20+ year service life in sealed enclosures |
| MIL-PRF-19500/516 JAN qualification | Validated screening includes burn-in, temperature cycling, and lot acceptance testing per military standards |
| IEC61000-4-5 lightning protection | Clamps induced surges from select levels of line-to-ground coupling, meeting DO-160 Section 22 Level 3 |
Applications
| Avionics Power Distribution | Satellite Bus Protection |
|---|---|
Use Scenario: Protecting 28 V DC main bus in airborne mission computers from load dump and inductive switching transients. IC Role / Device Role / Timing Role: Standoff-clamp TVS placed directly at bus entry point before DC-DC converters and FPGAs. Use Value: Limits transient voltage to ≤37.4 V during 1500 W surges, preventing latch-up or gate oxide damage in downstream ASICs. | Use Scenario: Safeguarding solar array regulator inputs against electrostatic discharge during orbital insertion and deployment. IC Role / Device Role / Timing Role: Bidirectional front-end clamp on unregulated PV bus, operating across –55 °C to +125 °C operational range. Use Value: Withstands >10 kV ESD per IEC61000-4-2 Contact Discharge without degradation due to triple-layer passivation. |
| Tactical Radio Front-End | Downhole Telemetry Interface |
Use Scenario: Shielding RF power amplifier bias lines from antenna-coupled RF transients and EMP-like events. IC Role / Device Role / Timing Role: Low-leakage (≤5 µA) TVS mounted adjacent to GaN PA bias pins to preserve quiescent current stability. Use Value: Maintains <37.4 V clamping during 10/1000 µs pulses, avoiding false triggering of protection circuitry during normal RF bursts. | Use Scenario: Protecting RS-485 telemetry lines in oil/gas wellhead controllers exposed to lightning-induced ground potential rise. IC Role / Device Role / Timing Role: Bidirectional clamp on differential pair, rated for 175 °C junction temperature and hermetic sealing against H₂S corrosion. Use Value: Survives repeated 1 kA surges per IEC61000-4-5 Level 4 with no parameter shift due to Category 1 metallurgical bonding. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6152AUS | Commercial-grade version; same electrical specs but not MIL-qualified; RoHS-compliant matte-tin terminations available | Lacks JAN-level screening and temperature cycling validation; unsuitable for flight hardware | Select when cost-sensitive industrial designs require identical clamping behavior without military certification |
| JANTX1N6152US/TR | Same SQ-MELF package and electrical parameters; JANTX qualification adds extended temperature screening and lot traceability | Approved for higher-tier defense platforms requiring enhanced reliability documentation and test records | Choose for programs requiring JANTX-level documentation, longer burn-in, and tighter parametric lot controls |
Compared with 1N6152AUS and JANTX1N6152US/TR, the JAN1N6152US/TR uniquely satisfies full JAN-level qualification per MIL-PRF-19500/516 - including mandatory lot acceptance tests and zero-defect screening - making it the only option approved for Class S spaceflight and critical avionics subsystems.
Availability
JAN1N6152US/TR is available at Aetrix Electronics and suitable for avionics power distribution, satellite bus protection, tactical radio front-end design, and downhole telemetry interface applications requiring stable component supply and long-term obsolescence management.
Supply support for JAN1N6152US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.
The JAN1N6152US/TR belongs to Microsemi's military-qualified TVS family designed specifically for fail-safe transient suppression in mission-critical systems where hermeticity, radiation tolerance, and MIL-standard screening are non-negotiable.
FAQ
What is the clamping voltage of JAN1N6152US/TR and under what test condition is it specified?
The clamping voltage of JAN1N6152US/TR is 37.4 V, measured at 40.1 A peak pulse current (IPP) using the standardized 10/1000 µs double-exponential surge waveform. This value is guaranteed across the full operating temperature range and reflects the maximum voltage seen by protected circuitry during worst-case transients - a key parameter for ensuring downstream ICs remain within absolute maximum ratings. The JAN1N6152US/TR achieves this with tightly controlled avalanche characteristics and low dynamic impedance.
Is JAN1N6152US/TR suitable for bidirectional signal line protection?
Yes, JAN1N6152US/TR is inherently bidirectional and requires no polarity marking, making it suitable for protecting AC-coupled or floating DC signal paths such as RS-485 buses, transformer-isolated interfaces, or differential sensor inputs. Its symmetrical breakdown behavior ensures equal clamping in both directions, and its ≤5 µA leakage at 20.6 V VWM prevents signal distortion. The JAN1N6152US/TR has been validated in bidirectional telecom and telemetry applications per IEC61000-4-5.
What does the "JAN" prefix signify for JAN1N6152US/TR?
"JAN" denotes Joint Army-Navy qualification per MIL-PRF-19500/516, the highest baseline reliability level for discrete semiconductors. For JAN1N6152US/TR, this includes rigorous screening: 168-hour burn-in, temperature cycling (–55 °C to +125 °C), steady-state life testing, and lot acceptance tests for parameters like V(BR), VC, and leakage. The JAN1N6152US/TR is approved for Class B and Class S space applications and is traceable to material lots and process steps.
How does JAN1N6152US/TR differ from commercial 1N6152AUS in terms of construction and reliability?
JAN1N6152US/TR uses identical voidless hermetic hard-glass SQ-MELF packaging and Category 1 metallurgical bonds as 1N6152AUS, but undergoes full JAN-level screening including extended burn-in, temperature cycling, and parametric lot acceptance testing. The JAN1N6152US/TR also features non-RoHS tin/lead terminations and is rated for operation up to +175 °C junction temperature - exceeding the commercial part's +150 °C limit. These differences make JAN1N6152US/TR suitable for flight-critical systems where zero latent defects are mandated.
Can JAN1N6152US/TR be used in high-humidity or corrosive environments?
Yes, JAN1N6152US/TR is explicitly designed for harsh environments: its voidless hermetic glass seal prevents moisture ingress, and its tungsten slug construction resists hydrogen embrittlement and H₂S corrosion. The device is rated for operation from –55 °C to +175 °C and has demonstrated long-term stability in salt fog and high-humidity accelerated life testing. In downhole and maritime applications, the JAN1N6152US/TR maintains parameter integrity where non-hermetic TVS devices would degrade.
JAN1N6152US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 20.6V
- Voltage - Breakdown (Min):
- 25.7V
- Voltage - Clamping (Max) @ Ipp:
- 37.4V
- Current - Peak Pulse (10/1000µs):
- 40.1A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6152US/TR FAQ
1.How can I place an order for JAN1N6152US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6152US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6152US/TR reliable?
The price and inventory of JAN1N6152US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6152US/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6152US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6152US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6152US/TR?
JAN1N6152US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6152US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6152US/TR?
For technical support, including JAN1N6152US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6152US/TR requirements.
6.How does Aetrix verify that JAN1N6152US/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6152US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6152US/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6152US/TR?
All JAN1N6152US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6152US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6152US/TR part is unused and in its original packaging.
Return procedure for JAN1N6152US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6152US/TR Tags
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