Microchip Technology JAN1N6153AUS/TR
- Part No.:
- JAN1N6153AUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6153AUS/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
JAN1N6153AUS/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JAN level. It provides 22.8 V working standoff voltage, 41.6 V clamping voltage at 36.0 A peak pulse current, and 1500 W peak pulse power for 10/1000 µs waveform - deployed in military avionics power rail protection.
For engineers reviewing the JAN1N6153AUS/TR datasheet, JAN1N6153AUS/TR pinout, JAN1N6153AUS/TR application, or JAN1N6153AUS/TR equivalent, key selection criteria include standoff voltage tolerance, clamping ratio, surge robustness per IEC61000-4-5 Level 3, hermetic glass package reliability, and MIL-qualified temperature range (-55°C to +175°C).
Technical Context
This TVS operates bidirectionally with no polarity marking and uses hard-glass construction with internal Category 1 metallurgical bonds for radiation-hardened, high-reliability operation. Its breakdown voltage is 28.5 V ±5% at 40 mA, and it maintains stable clamping performance across -55°C to +175°C junction temperature.
The device delivers 1500 W peak pulse power under 10/1000 µs waveform while limiting transient-induced overvoltage to ≤41.6 V at 36.0 A. Thermal resistance from junction to end cap is 5.0°C/W, enabling sustained off-state power dissipation up to 5.0 W at TEC = 150°C with linear derating to zero at 175°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Standoff Voltage (VWM) | 22.8 V - maximum continuous DC or repetitive peak voltage applied without triggering conduction |
| Breakdown Voltage (VBR) | 28.5 V @ 40 mA - voltage at which device enters avalanche breakdown with tight ±5% tolerance |
| Clamping Voltage (VC) | 41.6 V @ 36.0 A - limits transient-induced voltage across protected circuit during 10/1000 µs surge |
| Peak Pulse Power (PPP) | 1500 W - maximum non-repetitive surge energy absorption capability per standard waveform |
| Standby Current (ID) | 5 µA @ 22.8 V - leakage current below standoff threshold ensures minimal power loss in standby |
| Temperature Range | -55°C to +175°C - fully specified operation across extended military temperature envelope |
| Thermal Resistance (RθJEC) | 5.0°C/W - enables efficient heat transfer from junction to end cap for high-power transient handling |
Pinout & Package
Package: SQ-MELF (C-package), hermetically sealed voidless hard glass with tungsten slugs; terminals are tin/lead plated copper; no polarity marking due to bidirectional symmetry.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Bidirectional avalanche junction | Either end functions identically as cathode or anode depending on transient polarity - no orientation required during placement |
| End Cap (both ends) | Thermal and electrical termination | Directly interfaces with PCB pads for both current conduction and heat dissipation; requires compliant pad layout per Microsemi drawing |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination - critical for long-term reliability in vacuum or high-humidity military environments |
| Category 1 metallurgical bonds | Ensures mechanical integrity under thermal cycling and vibration stress per MIL-STD-883 method 2001 |
| MIL-PRF-19500/516 qualification (JAN level) | Validated screening including burn-in, temperature cycling, and hermeticity testing for mission-critical systems |
| Triple-layer passivation | Prevents surface leakage and enhances stability of breakdown characteristics over lifetime |
| IEC61000-4-5 Level 3 compliance | Withstands 1 kV line-to-ground and 2 kV line-to-line surge immunity testing in industrial/military installations |
Applications
| Aerospace Power Distribution | Military Vehicle ECUs |
|---|---|
Use Scenario: Protecting 28 V DC bus inputs in satellite power conditioning units against lightning-induced transients. IC Role / Device Role / Timing Role: Bidirectional TVS clamping device placed directly at connector entry point to shunt surge energy before reaching downstream regulators. Use Value: Limits voltage excursion to ≤41.6 V during 10/1000 µs surges, preserving integrity of radiation-tolerant DC/DC converters rated for 36 V max input. | Use Scenario: Safeguarding engine control unit (ECU) CAN and sensor supply lines in tracked armored vehicles exposed to EMP and ignition noise. IC Role / Device Role / Timing Role: Primary overvoltage clamp on 24 V auxiliary rails feeding microcontrollers and analog front-ends. Use Value: Withstands ≥36 A peak impulse current while maintaining <5 µA leakage at 22.8 V - ensuring low quiescent power and EMI-free operation. |
| Tactical Radio Front-Ends | Naval Shipboard Sensors |
Use Scenario: Shielding RF power amplifier bias rails in HF/VHF manpack radios subjected to antenna-coupled ESD and nearby lightning. IC Role / Device Role / Timing Role: Fast-response transient suppressor mounted adjacent to PA transistor collector feed. Use Value: Clamps within nanoseconds to 41.6 V, preventing gate oxide rupture in GaN transistors operating near 28 V nominal supply. | Use Scenario: Protecting pressure and inertial measurement units on naval vessels experiencing salt fog, wide thermal swings, and deck-level surges. IC Role / Device Role / Timing Role: Hermetically sealed TVS on 24 V sensor interface boards requiring zero field failures over 20-year service life. Use Value: -55°C to +175°C operational range and MIL-qualified screening ensure zero latent defects in harsh maritime deployments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6153AUS | Same electrical specs but commercial-grade (non-MIL-qualified); RoHS-compliant matte-tin terminations available | Lacks JAN-level screening, burn-in, and hermeticity validation - unsuitable for flight-critical or nuclear-hardened systems | Select only for cost-sensitive ground-based test equipment where full MIL qualification is not mandated |
| JANTX1N6153AUS | Identical VWM, VC, and PPP; includes JANTX-level screening (more rigorous than JAN but less than JANS) | Approved for higher-tier aerospace platforms requiring extended reliability beyond baseline JAN, e.g., UAV flight controllers | Choose when system-level qualification demands tighter parametric spread and longer life test data than JAN provides |
Compared with JAN1N6153AUS/TR, the commercial 1N6153AUS reduces cost and adds RoHS compliance but forfeits military screening, while JANTX1N6153AUS extends reliability assurance for airborne systems needing enhanced lot traceability and failure analysis rigor - all share identical SQ-MELF package and electrical response.
Availability
JAN1N6153AUS/TR is available at Aetrix Electronics and suitable for aerospace power distribution, military vehicle ECUs, tactical radio front-ends, and naval shipboard sensors requiring stable component supply under extended temperature and surge stress conditions.
Supply support for JAN1N6153AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for defense, aerospace, and industrial markets.
The JAN1N6153AUS/TR belongs to Microsemi's military-qualified TVS diode family engineered specifically for survivability in extreme electromagnetic environments - emphasizing hermetic sealing, radiation tolerance, and MIL-PRF-19500/516 compliance.
FAQ
What is the clamping voltage of JAN1N6153AUS/TR and how is it measured?
The clamping voltage of JAN1N6153AUS/TR is 41.6 V, measured at 36.0 A peak pulse current under the standardized 10/1000 µs double-exponential surge waveform. This value represents the maximum voltage that appears across the device during transient suppression and is guaranteed across the full -55°C to +175°C operating temperature range. The specification ensures predictable overvoltage limiting for downstream 28 V systems protected by JAN1N6153AUS/TR.
Is JAN1N6153AUS/TR RoHS compliant?
No, JAN1N6153AUS/TR is not RoHS compliant. It uses traditional tin/lead plating on copper terminals as required for military-grade solderability and thermal fatigue resistance. RoHS-compliant matte-tin terminations are available only on commercial-grade variants such as 1N6153AUS, not on JAN-level parts. JAN1N6153AUS/TR conforms to MIL-PRF-19500/516 requirements, which permit leaded finishes for high-reliability applications.
What does the "A" suffix in JAN1N6153AUS/TR signify?
The "A" suffix in JAN1N6153AUS/TR indicates standard voltage tolerance: ±5% on breakdown voltage (VBR) and tighter control on clamping voltage (VC) and peak pulse current (IPP). Non-A versions have 5% higher VC, 5% lower minimum VBR, and 5% lower IPP. The "A" variant ensures consistent transient suppression performance across production lots, making JAN1N6153AUS/TR suitable for precision-critical military designs where parameter stability is mandatory.
Can JAN1N6153AUS/TR be used in place of axial-leaded 1N6153 parts?
No, JAN1N6153AUS/TR is not a direct replacement for axial-leaded 1N6153 variants due to fundamental package differences: it uses the SQ-MELF surface-mount C-package, while axial versions use through-hole DO-41 or DO-15 packages. Mounting, thermal path, and board layout are incompatible. Although electrical parameters match, mechanical integration requires redesign. JAN1N6153AUS/TR must be placed using reflow-compatible pad layouts defined in Microsemi's package drawing - not substituted into through-hole footprints.
What standards does JAN1N6153AUS/TR meet for surge immunity?
JAN1N6153AUS/TR meets IEC61000-4-5 Level 3 for surge immunity (1 kV line-to-ground, 2 kV line-to-line), IEC61000-4-2 for ESD (±15 kV air, ±8 kV contact), and IEC61000-4-4 for EFT (40 A, 5/50 ns). These capabilities are enabled by its 1500 W peak pulse power rating and sub-1 ns response time. Compliance is verified per test conditions in Microsemi's qualification report T4-LDS-0278-1, confirming JAN1N6153AUS/TR's suitability for hardened military platform interfaces.
JAN1N6153AUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 22.8V
- Voltage - Breakdown (Min):
- 28.5V
- Voltage - Clamping (Max) @ Ipp:
- 41.6V
- Current - Peak Pulse (10/1000µs):
- 36A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6153AUS/TR FAQ
1.How can I place an order for JAN1N6153AUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6153AUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6153AUS/TR reliable?
The price and inventory of JAN1N6153AUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6153AUS/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6153AUS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6153AUS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6153AUS/TR?
JAN1N6153AUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6153AUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6153AUS/TR?
For technical support, including JAN1N6153AUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6153AUS/TR requirements.
6.How does Aetrix verify that JAN1N6153AUS/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6153AUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6153AUS/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6153AUS/TR?
All JAN1N6153AUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6153AUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6153AUS/TR part is unused and in its original packaging.
Return procedure for JAN1N6153AUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6153AUS/TR Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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