Microchip Technology JAN1N6154US/TR

Overview

JAN1N6154US/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JAN level, with 25.1 V working standoff voltage (VWM), 31.4 V minimum breakdown voltage (V(BR)), and 45.7 V clamping voltage (VC) at 32.8 A peak pulse current (IPP). It delivers 1500 W peak pulse power for 10/1000 µs transients and operates across –55 °C to +175 °C junction temperature range. Used in military avionics power rail protection.

For engineers reviewing the JAN1N6154US/TR datasheet, JAN1N6154US/TR pinout, JAN1N6154US/TR application, or JAN1N6154US/TR equivalent, key selection criteria include its MIL-qualified reliability, bidirectional clamping behavior, glass-body thermal resistance (5.0 °C/W), standoff-to-clamp voltage margin (25.1 V → 45.7 V), and compatibility with automated SMT placement on SQ-MELF footprints.

Technical Context

This TVS operates as a voltage-clamped shunt protector: below VWM (25.1 V), leakage remains ≤5 µA; above V(BR) (≥31.4 V), it avalanches into low-impedance conduction to limit VC to 45.7 V during 10/1000 µs surges. Its hard-glass construction with internal Category 1 metallurgical bonds ensures survivability under repeated 1500 W pulses and radiation-hardened operation per MicroNote 050.

Designed for high-reliability DC power rails, it meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 lightning surge levels. The bidirectional architecture eliminates polarity concerns, and square-end-cap terminals enable precise pick-and-place alignment without orientation verification.

Key Specifications

Pinout & Package

Package: SQ-MELF (Square End-Cap Metal Electrode Leadless Face), hermetically sealed voidless hard glass with tungsten slugs; dimensions: BD = 0.183–0.202 in (4.65–5.13 mm), BL = 0.205–0.245 in (5.21–6.22 mm); weight ≈1100 mg.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar TVS protection applications.

Compared with 1N6154AUS and JANTXV1N6154US, the JAN1N6154US/TR provides verified MIL-PRF-19500/516 JAN-level qualification at lower cost than JANTXV, while offering guaranteed radiation hardness and hermeticity absent in commercial variants-making it optimal for deployed defense electronics where failure is unacceptable.

Availability

JAN1N6154US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, military vehicle ECUs, naval radar front-ends, and tactical radio power inputs requiring stable component supply across extended product lifecycles.

Supply support for JAN1N6154US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-temperature, and MIL-spec components.

The 1N6138AUS–1N6173AUS series was developed specifically for military-grade transient suppression in harsh-environment platforms where hermetic sealing, surge robustness, and long-term parameter stability are non-negotiable.

FAQ

What is the clamping voltage of JAN1N6154US/TR and how is it measured?

The clamping voltage (VC) of JAN1N6154US/TR is 45.7 V, measured at 32.8 A peak pulse current (IPP) using a standardized 10/1000 µs double-exponential waveform per MIL-STD-750 Method 3013. This value represents the maximum voltage seen by downstream circuitry during a surge event and is guaranteed across the full –55 °C to +175 °C operating range. The JAN1N6154US/TR maintains this VC specification under all qualified JAN-level environmental stresses.

Is JAN1N6154US/TR RoHS compliant?

No, JAN1N6154US/TR is not RoHS compliant. Per the nomenclature table in T4-LDS-0278-1 Rev. 2, RoHS-compliant versions (marked with "e3") are available only for commercial-grade parts (e.g., 1N6154AUS), not for JAN-level qualified devices like JAN1N6154US/TR. The JAN1N6154US/TR uses tin/lead plating on copper terminals, consistent with legacy military soldering standards.

What does the "TR" suffix indicate in JAN1N6154US/TR?

The "TR" suffix in JAN1N6154US/TR denotes tape-and-reel packaging per EIA-481-B standard, enabling automated surface-mount assembly. It does not affect electrical specifications or qualification level. The base device remains JAN1N6154US; the "TR" simply specifies carrier format-no change to hermeticity, metallurgy, or MIL-PRF-19500/516 compliance. All JAN1N6154US/TR units retain the same voidless glass construction and Category 1 bonding as bulk-packaged JAN1N6154US.

How does JAN1N6154US/TR differ from the non-"A" version 1N6154US?

JAN1N6154US/TR belongs to the "A" variant family, meaning it has tighter voltage tolerances: its minimum breakdown voltage is 31.4 V (vs. 5% lower for non-A), clamping voltage is 45.7 V (vs. 5% higher for non-A), and peak pulse current is 32.8 A (vs. 5% lower for non-A). These differences are defined in the nomenclature section of T4-LDS-0278-1 and directly impact surge margin design-engineers must use the "A" version when precise clamping control is required.

Can JAN1N6154US/TR be used in place of axial-leaded 1N6154?

No, JAN1N6154US/TR is not a drop-in replacement for axial-leaded 1N6154. Although electrically identical, the SQ-MELF surface-mount package (JAN1N6154US/TR) requires different PCB footprint, reflow profile, and mechanical mounting versus the through-hole "C" package (1N6154). The datasheet explicitly lists them as separate package options-not interchangeable forms-and no pin-to-pin or layout compatibility is claimed between them.