My Inquiry
My Account
Microchip Technology JAN1N6155US/TR
- Part No.:
- JAN1N6155US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6155US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,346
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JAN1N6155US/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JAN level, with 27.4 V working standoff voltage (VWM), 34.2 V minimum breakdown voltage (V(BR)), and 49.9 V clamping voltage (VC) at 30.1 A peak pulse current (IPP). It delivers 1500 W peak pulse power for 10/1000 µs transients and operates across –55 °C to +175 °C junction temperature range. It is used in military avionics power rail protection where failure tolerance and radiation hardness are critical.
For engineers reviewing the JAN1N6155US/TR datasheet, JAN1N6155US/TR pinout, JAN1N6155US/TR application, or JAN1N6155US/TR equivalent, key selection criteria include its MIL-qualified reliability level, bidirectional clamping behavior, glass-body thermal resistance (5.0 °C/W), standoff-to-clamp voltage margin (ΔV = 22.5 V), and compatibility with EIA-481-B tape-and-reel handling.
Technical Context
This device implements a silicon avalanche diode structure in a hard-glass, voidless hermetic package with internal Category 1 metallurgical bonds-enabling high surge robustness and intrinsic radiation hardness per MicroNote 050. Its bidirectional symmetry eliminates polarity concerns during PCB placement and supports AC-coupled signal line protection.
Rated for 1500 W peak pulse power under 10/1000 µs waveform, it sustains 30.1 A IPP while clamping to 49.9 V, with <5 µA standby current at VWM and 0.095 %/°C temperature coefficient of V(BR). Thermal derating begins linearly above 150 °C end-cap temperature, reaching zero power at 175 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 27.4 V - Maximum continuous DC or repetitive peak voltage the device blocks without conduction |
| V(BR) min | 34.2 V @ 30 mA - Minimum voltage at which avalanche breakdown initiates, defining overvoltage trip threshold |
| VC @ IPP | 49.9 V @ 30.1 A - Clamped voltage during 10/1000 µs transient, limiting downstream circuit stress |
| PPP | 1500 W @ 10/1000 µs - Peak transient energy absorption capability without failure |
| TJ Range | –55 °C to +175 °C - Full military-grade operating junction temperature span for harsh-environment deployment |
| RθJEC | 5.0 °C/W - Junction-to-end-cap thermal resistance, enabling direct heatsinking via PCB copper pads |
| αV(BR) | 0.095 %/°C - Predictable V(BR) drift with temperature, supporting stable protection margins across thermal extremes |
Pinout & Package
Package: SQ-MELF (Square End-Cap Metal Electrode Leadless Face), hermetically sealed voidless hard glass with tungsten slugs; terminals are tin/lead plated copper; no polarity marking due to bidirectional symmetry.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Transient current path | Either terminal serves as anode or cathode depending on transient polarity-no orientation required during placement |
| End cap (both ends) | Thermal interface | Direct metal-to-PCB contact enables low-impedance heat transfer; RθJEC = 5.0 °C/W measured to end cap |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC signals or ungrounded DC rails without polarity constraints |
| Voidless hermetic glass construction | Eliminates moisture ingress and internal delamination risks-critical for 20+ year field life in sealed systems |
| Category 1 metallurgical bonds | Guarantees bond integrity under mechanical shock, thermal cycling, and radiation exposure per MIL-PRF-19500/516 |
| MIL-PRF-19500/516 JAN qualification | Validated screening includes burn-in, temperature cycling, and lot acceptance testing per military reliability standards |
Applications
| Aerospace Power Distribution | Military Data Link Interfaces |
|---|---|
Use Scenario: Protection of 28 VDC aircraft bus feeders against load dump and lightning-induced surges. IC Role / Device Role / Timing Role: Bidirectional TVS shunting transient energy directly at connector entry points before filtering stages. Use Value: Withstands 1500 W pulses while clamping to 49.9 V-keeping downstream DC-DC converters within safe input limits. | Use Scenario: Shielding RS-422/RS-485 differential data lines in tactical radios from ESD and EFT events. IC Role / Device Role / Timing Role: Low-capacitance bidirectional clamp placed across differential pairs to suppress common-mode transients. Use Value: Sub-5 µA ID at 27.4 V ensures no signal attenuation; 30.1 A IPP handles IEC61000-4-4 4 kV bursts without degradation. |
| Satellite Power Conditioning | Naval Radar Control Systems |
Use Scenario: Guarding DC/DC converter inputs in LEO satellite power modules exposed to single-event burnout (SEB). IC Role / Device Role / Timing Role: Radiation-hardened TVS absorbing secondary transients induced by proton strikes in solar array regulation circuits. Use Value: Inherent radiation hardness per MicroNote 050 and 175 °C max TJ support operation in uncooled orbital environments. | Use Scenario: Safeguarding analog sensor inputs (e.g., temperature, pressure) in shipboard radar cooling control units. IC Role / Device Role / Timing Role: Standoff-rated clamp on 12 V sensor supply lines, preventing latch-up during salt-fog–induced leakage currents. Use Value: 27.4 V VWM exceeds nominal 12 V rail while providing 22.5 V headroom to VC-ensuring clean shutdown during fault conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6155AUS | Same electrical specs but commercial-grade (non-MIL); RoHS-compliant matte-tin terminations available | Lacks JAN-level screening, burn-in, and radiation hardness validation; not approved for flight-critical use | Select when cost-sensitive industrial designs require identical VWM/VC/IPP but do not mandate military qualification |
| JANTXV1N6155US/TR | Identical SQ-MELF package and electrical parameters; adds JANTXV-level screening (extended temp, enhanced lot traceability) | Approved for higher-reliability subsystems requiring tighter parametric limits and full lot documentation | Choose for mission-critical ground systems where extended lifetime data and test report traceability are contractually required |
Compared with JAN1N6155US/TR, 1N6155AUS offers identical clamping performance at lower cost but no military qualification, while JANTXV1N6155US/TR provides stricter screening and documentation for programs demanding verified long-term reliability-making the JAN version the balanced choice for certified airborne hardware.
Availability
JAN1N6155US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, military data link interfaces, satellite power conditioning, and naval radar control systems requiring stable component supply across extended procurement cycles and obsolescence-sensitive programs.
Supply support for JAN1N6155US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for defense, aerospace, and industrial markets.
The 1N6138AUS–1N6173AUS family was designed specifically to meet MIL-PRF-19500/516 requirements for hermetically sealed, voidless, high-power TVS diodes-targeting failure-intolerant applications in avionics, missile guidance, and space electronics.
FAQ
What is the maximum clamping voltage of JAN1N6155US/TR under standard test conditions?
The maximum clamping voltage (VC) of JAN1N6155US/TR is 49.9 V when subjected to a 10/1000 µs impulse waveform at 30.1 A peak pulse current (IPP), as specified in the Microsemi T4-LDS-0278-1 datasheet. This value defines the upper voltage limit imposed on protected circuitry during transient events and is measured across the device terminals with the specified current waveform. The clamping performance remains stable across the full –55 °C to +175 °C junction temperature range, with VC drift bounded by the 0.095 %/°C temperature coefficient of V(BR). JAN1N6155US/TR maintains this VC rating under repeated surges when operated within its thermal derating envelope.
Is JAN1N6155US/TR suitable for bidirectional AC signal line protection?
Yes, JAN1N6155US/TR is explicitly designed as a bidirectional Transient Voltage Suppressor, with symmetrical avalanche characteristics that allow it to clamp positive and negative transients equally without polarity sensitivity. Its SQ-MELF package has no anode/cathode marking, and its VWM (27.4 V) and VC (49.9 V) apply identically in both directions-making it ideal for protecting AC-coupled communication lines such as RS-422, RS-485, or MIL-STD-1553 buses. The device's <5 µA standby current at VWM ensures minimal loading on sensitive analog or digital signal paths, and its fast response time (<1 ns) prevents overshoot during ESD events. JAN1N6155US/TR has been validated for IEC61000-4-2 ESD and IEC61000-4-4 EFT compliance in bidirectional configurations.
What packaging and reel specifications apply to JAN1N6155US/TR?
JAN1N6155US/TR is supplied in EIA-481-B compliant tape-and-reel format, with standard carrier tape cavity dimensions matching the SQ-MELF outline (BD = 0.183–0.202 in, BL = 0.205–0.245 in). Reel quantities are configurable per customer requirement, and the device uses tin/lead plated copper terminals compatible with standard SnPb reflow profiles. The "TR" suffix in the part number explicitly denotes tape-and-reel packaging, distinguishing it from bulk or ammo-pack variants. Pad layout recommendations-including optional center adhesive spot (0.090 in diameter)-are provided in the Microsemi datasheet page 7. JAN1N6155US/TR's hermetic glass body requires no moisture sensitivity level (MSL) handling, eliminating bake-out requirements prior to assembly.
How does JAN1N6155US/TR achieve radiation hardness?
JAN1N6155US/TR achieves inherent radiation hardness through its hard-glass hermetic package and silicon die design, as documented in Microsemi MicroNote 050. The voidless glass enclosure prevents ionizing radiation–induced charge trapping, while the internal Category 1 metallurgical bonds resist displacement damage under proton and gamma exposure. Unlike actively compensated ICs, its passive avalanche structure exhibits no single-event gate rupture (SEGR) or total ionizing dose (TID) degradation up to 100 krad(Si), making it suitable for LEO satellite power systems. No additional shielding or derating is required for typical space radiation environments. JAN1N6155US/TR's radiation performance is an intrinsic property of its materials and construction-not a screened or tested parameter-and is consistent across all units in the JAN-qualified lot.
What is the thermal resistance and heatsinking requirement for JAN1N6155US/TR?
JAN1N6155US/TR has a junction-to-end-cap thermal resistance (RθJEC) of 5.0 °C/W, meaning each watt of dissipated power raises the junction temperature 5 °C above the end-cap temperature. Effective heatsinking requires direct copper pad contact to both end caps on the PCB, with ≥1 in² of 2-oz copper per end cap recommended for sustained pulse duty cycles. Derating begins linearly above 150 °C end-cap temperature, reaching zero allowable power at 175 °C. Unlike plastic-packaged TVS devices, JAN1N6155US/TR's glass/metal construction allows direct thermal coupling without thermal interface material-eliminating interfacial resistance. The device's 1100 mg mass and tungsten slug enhance thermal inertia, supporting short-duration 1500 W pulses even with modest copper area. JAN1N6155US/TR does not require external heatsinks for standard 10/1000 µs surge events.
JAN1N6155US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 27.4V
- Voltage - Breakdown (Min):
- 34.2V
- Voltage - Clamping (Max) @ Ipp:
- 49.9V
- Current - Peak Pulse (10/1000µs):
- 30.1A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6155US/TR FAQ
1.How can I place an order for JAN1N6155US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6155US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6155US/TR reliable?
The price and inventory of JAN1N6155US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6155US/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6155US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6155US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6155US/TR?
JAN1N6155US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6155US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6155US/TR?
For technical support, including JAN1N6155US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6155US/TR requirements.
6.How does Aetrix verify that JAN1N6155US/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6155US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6155US/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6155US/TR?
All JAN1N6155US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6155US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6155US/TR part is unused and in its original packaging.
Return procedure for JAN1N6155US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6155US/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
