Microchip Technology JAN1N6156AUS/TR

Overview

JAN1N6156AUS/TR from Microsemi is a military-qualified, voidless hermetically sealed bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF package, rated for 1500 W peak pulse power (10/1000 µs), 29.7 V working standoff voltage (V_WM), and 53.6 V clamping voltage (V_C) at 28.0 A peak pulse current. It operates across –55 °C to +175 °C and is used in high-reliability avionics power rail protection.

For engineers reviewing the JAN1N6156AUS/TR datasheet, JAN1N6156AUS/TR pinout, JAN1N6156AUS/TR application, or JAN1N6156AUS/TR equivalent, key selection criteria include its MIL-PRF-19500/516 JAN-level qualification, bidirectional clamping behavior, glass-body thermal resistance (5.0 °C/W), and IEC61000-4-2/4-4/4-5 compliance for ESD, EFT, and lightning surge immunity.

Technical Context

This TVS employs hard-glass construction with internal Category 1 metallurgical bonds for radiation hardness and long-term reliability under thermal cycling. Its bidirectional architecture provides symmetrical clamping without polarity marking, enabling use on AC-coupled or floating signal lines.

The device delivers 1500 W peak pulse power at 10/1000 µs waveform with a temperature coefficient of breakdown voltage (αV_BR) of 0.095 %/°C, and exhibits <5 µA standby current at 29.7 V_WM, ensuring minimal leakage in standby operation.

Key Specifications

Pinout & Package

SQ-MELF (Square-End-Cap Metal Electrode Leadless Face) hermetically sealed glass package with tungsten slugs and tin/lead-plated copper terminals; no polarity marking due to bidirectional symmetry.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with JANTXV1N6156AUS and 1N6156AUS, the JAN1N6156AUS/TR offers the optimal balance of military reliability assurance and production scalability-delivering full JAN-level qualification without the extended test overhead of JANTXV, and retaining hermetic glass robustness absent in commercial plastic-packaged alternatives.

Availability

JAN1N6156AUS/TR is available at Aetrix Electronics and suitable for aerospace power distribution, ground vehicle data bus protection, and military radio front-end designs requiring stable component supply across extended procurement cycles.

Supply support for JAN1N6156AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, discrete devices, and RF solutions for defense, aerospace, and industrial markets.

The 1N6138AUS–1N6173AUS family was engineered specifically for mission-critical transient suppression in MIL-STD-461-compliant platforms, emphasizing hermeticity, radiation tolerance, and repeatable clamping performance under extreme thermal and mechanical stress.

FAQ

What is the clamping voltage of JAN1N6156AUS/TR at its rated peak pulse current?

The JAN1N6156AUS/TR has a maximum clamping voltage (V_C) of 53.6 V at 28.0 A peak pulse current (I_PP) under the standard 10/1000 µs waveform. This value is measured per MIL-PRF-19500/516 test conditions and defines the upper voltage limit imposed on protected circuitry during surge events. The clamping performance is guaranteed across the full –55 °C to +175 °C junction temperature range, making JAN1N6156AUS/TR suitable for engine bay or avionics bay deployments.

Is JAN1N6156AUS/TR compatible with lead-free reflow processes?

JAN1N6156AUS/TR uses tin/lead terminal plating and is rated for solder temperature up to 260 °C for 10 seconds, aligning with SnPb reflow profiles. It is not qualified for lead-free reflow (which typically requires >260 °C peak), and Microsemi does not offer a RoHS-compliant version of the JAN-level part. For lead-free assembly, consider the commercial 1N6156AUS variant, which supports matte-tin plating and meets JEDEC J-STD-020 moisture sensitivity level 1.

Does JAN1N6156AUS/TR require polarity-aware PCB layout?

No - JAN1N6156AUS/TR is a bidirectional TVS with no polarity marking or functional anode/cathode distinction. Its symmetric breakdown and clamping behavior allows placement in either orientation on the PCB. This simplifies layout for differential lines, AC-coupled interfaces, or floating grounds, and eliminates risk of reverse installation. The SQ-MELF package's square end caps further support automated optical recognition regardless of rotation.

How does the thermal resistance of JAN1N6156AUS/TR impact its surge handling capability?

JAN1N6156AUS/TR specifies a junction-to-end-cap thermal resistance (R_θJEC) of 5.0 °C/W, meaning each watt of pulsed power raises the junction temperature by 5 °C above the end-cap temperature. Since its 1500 W peak pulse rating assumes short-duration impulses (<1 ms), this low R_θJEC enables rapid heat transfer into the PCB copper, preventing thermal runaway. For repetitive surges, derating per Figure 4 in the datasheet is required to maintain T_J ≤ 175 °C.

What standards does JAN1N6156AUS/TR meet for electromagnetic immunity?

JAN1N6156AUS/TR provides protection compliant with IEC61000-4-2 (ESD ±15 kV air/±8 kV contact), IEC61000-4-4 (EFT 4 kV), and select levels of IEC61000-4-5 (lightning surge). These capabilities are inherent to its 1500 W peak pulse rating and fast response time (<1 ns), and are validated in the context of MIL-STD-461 RS103 radiated susceptibility and CS115 conducted transient testing. Its performance is documented in Microsemi MicroNote 050 for radiation-hardened deployment.