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Microchip Technology JAN1N6157AUS/TR
- Part No.:
- JAN1N6157AUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6157AUS/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,898
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Product details
Overview
JAN1N6157AUS/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JAN level, with 32.7 V working standoff voltage (VWM), 40.9 V minimum breakdown voltage (V(BR)), and 59.1 V clamping voltage (VC) at 25.4 A peak pulse current (IPP). It delivers 1500 W peak pulse power for 10/1000 µs waveform and operates across –55 °C to +175 °C junction temperature range, deployed in avionics power rail protection.
For engineers reviewing the JAN1N6157AUS/TR datasheet, JAN1N6157AUS/TR pinout, JAN1N6157AUS/TR application, or JAN1N6157AUS/TR equivalent, key selection criteria include military-grade reliability qualification, bidirectional clamping behavior, glass-body thermal resistance (5.0 °C/W), RoHS-compliant tin/lead terminal plating, and compatibility with EIA-481-B tape-and-reel handling.
Technical Context
This TVS diode uses hard-glass hermetic construction with internal Category 1 metallurgical bonds to ensure radiation hardness and immunity to moisture ingress, supporting mission-critical operation in space and defense systems. Its bidirectional architecture provides symmetrical clamping without polarity marking, enabling use on AC-coupled or floating signal lines.
The device exhibits a 0.095 %/°C temperature coefficient of breakdown voltage (αV(BR)) and maintains stable clamping performance under repetitive 10/1000 µs transients up to 0.01% impulse repetition rate. Thermal resistance from junction to end cap is 5.0 °C/W, enabling direct heat sinking via copper slugs in high-power surge events.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 32.7 V - maximum continuous DC or peak reverse voltage before conduction begins |
| V(BR) min | 40.9 V @ 30 mA - guaranteed breakdown threshold defining turn-on sensitivity |
| VC @ IPP | 59.1 V @ 25.4 A - clamped voltage during 10/1000 µs surge, limiting downstream stress |
| PPP | 1500 W - peak transient energy absorption capability per standardized pulse |
| TJ Range | –55 °C to +175 °C - operational envelope validated for aerospace and ground vehicle environments |
| RθJEC | 5.0 °C/W - thermal resistance from junction to end cap, enabling direct thermal path design |
| ID @ VWM | 5 µA - ultra-low leakage ensuring minimal standby power loss in high-impedance circuits |
Pinout & Package
Package: SQ-MELF (C package), hermetically sealed voidless hard glass with tungsten slugs and tin/lead-plated copper terminals; no polarity marking due to bidirectional symmetry.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Surge current path | Either end serves as cathode or anode depending on transient polarity; no marking required |
| End Cap (both ends) | Thermal interface | Directly bonded tungsten slug enables low-RθJEC (5.0 °C/W) and mechanical robustness |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables protection of AC or floating nodes without polarity-sensitive layout constraints |
| Category 1 metallurgical bonds | Ensures long-term bond integrity under thermal cycling and mechanical shock per MIL-STD-883 |
| Voidless hermetic seal | Prevents moisture-induced parameter drift and corrosion failure in humid or vacuum environments |
| MIL-PRF-19500/516 JAN qualification | Validates screening, testing, and traceability for Class S (space) and Class H (high-reliability) applications |
| Square-end-cap terminals | Facilitates automated placement and solder joint consistency in high-volume SMT assembly |
Applications
| Aerospace Power Distribution | Ground Vehicle Avionics Bus |
|---|---|
Use Scenario: Protection of 28 V DC main bus against load dump and alternator switching transients in satellite power management units. IC Role / Device Role / Timing Role: Bidirectional TVS clamping element placed directly across bus rails to shunt surges exceeding 32.7 V standoff. Use Value: Limits transient overvoltage to ≤59.1 V at 25.4 A, preserving downstream DC-DC converters and FPGAs rated for 36 V absolute max. | Use Scenario: Surge suppression on MIL-STD-1553B data bus termination points exposed to ESD and lightning-induced coupling. IC Role / Device Role / Timing Role: Standoff-clamp TVS connected between differential pair and chassis ground to suppress common-mode transients. Use Value: Withstands IEC61000-4-2 ±15 kV contact discharge and IEC61000-4-5 Level 3 (2 kV line-to-ground) without degradation. |
| Tactical Radio Front-End | Nuclear Command & Control Interface |
Use Scenario: Input protection for RF power amplifier bias rails subject to antenna-coupled EMP and nearby lightning. IC Role / Device Role / Timing Role: Fast-response TVS placed at DC feed-through point to prevent gate oxide damage in GaN amplifiers. Use Value: Sub-1 ns response time and 1500 W PPP rating enable survivability against 10/1000 µs pulses up to 25.4 A peak. | Use Scenario: Hardened I/O protection for serial control interfaces in radiation-intensive command bunkers. IC Role / Device Role / Timing Role: Radiation-tolerant TVS integrated into isolated RS-422 transceiver input stage. Use Value: Inherent radiation hardness per MicroNote 050 and JAN-level screening ensure >100 krad(Si) TID tolerance without parameter shift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JAN1N6157CUS/TR | No "A" suffix → 5% higher VC (62.1 V), 5% lower V(BR) min (38.9 V), 5% lower IPP (24.1 A) | Reduced clamping margin and lower surge current capacity; suitable only where tighter VWM tolerance is secondary | Select JAN1N6157CUS/TR only if legacy design validation used non-A variant and VWM margin allows higher VC |
| 1N6157AUS/TR (commercial grade) | Same electrical specs but commercial qualification (no MIL-PRF-19500/516 screening or traceability) | Lacks JAN-level burn-in, lot acceptance testing, and radiation assurance; not approved for flight hardware | Use 1N6157AUS/TR for ground-test prototypes or non-safety-critical subsystems where cost drives selection |
Compared with JAN1N6157AUS/TR, JAN1N6157CUS/TR trades clamping precision for legacy compatibility, while 1N6157AUS/TR sacrifices military reliability assurance for cost-neither offers pin-compatible replacement without requalification.
Availability
JAN1N6157AUS/TR is available at Aetrix Electronics and suitable for aerospace power distribution, ground vehicle avionics bus, tactical radio front-end, and nuclear command & control interface applications requiring stable component supply and full MIL-PRF-19500/516 traceability.
Supply support for JAN1N6157AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and mil-spec components.
The 1N6138AUS–1N6173AUS series was developed specifically for military-grade transient suppression in harsh-environment electronics, prioritizing hermeticity, surge robustness, and long-term parametric stability over commercial alternatives.
FAQ
What is the clamping voltage of JAN1N6157AUS/TR and how is it measured?
The clamping voltage (VC) of JAN1N6157AUS/TR is 59.1 V, measured at 25.4 A peak pulse current (IPP) using a standardized 10/1000 µs double-exponential waveform per MIL-STD-750 Method 3013. This value reflects the maximum voltage seen across the device during surge conduction and defines the protection level imposed on downstream circuitry. The test is performed at 25 °C ambient with device mounted per recommended pad layout.
Is JAN1N6157AUS/TR compatible with lead-free reflow processes?
JAN1N6157AUS/TR uses tin/lead (SnPb) terminal plating and is rated for solder temperature up to 260 °C for 10 seconds, making it compatible with standard SnPb reflow profiles. It is not RoHS-compliant; RoHS versions (e3 suffix) are available only in commercial-grade 1N6157AUS/TR, not JAN-level. Lead-free assembly requires process validation due to differing wetting and intermetallic formation behavior.
Does JAN1N6157AUS/TR require polarity-aware PCB layout?
No, JAN1N6157AUS/TR is a bidirectional TVS with no polarity marking and symmetrical electrical characteristics-either end functions identically as anode or cathode depending on transient polarity. PCB layout requires no orientation constraint, simplifying placement and reducing risk of assembly error. The SQ-MELF package's square end caps further support automated optical recognition without polarity dependency.
How does the JAN qualification level affect the screening of JAN1N6157AUS/TR?
JAN qualification for JAN1N6157AUS/TR mandates compliance with MIL-PRF-19500/516, including extended temperature cycling (–55 °C to +175 °C), hermeticity testing, steady-state life testing, and lot acceptance testing per MIL-STD-750. Each lot receives full traceability documentation, including wafer lot, assembly lot, and test data, ensuring suitability for Class S (space) and Class H (high-reliability) applications where failure is not tolerable.
What is the thermal resistance path for JAN1N6157AUS/TR and how should it be managed in PCB layout?
JAN1N6157AUS/TR has a junction-to-end-cap thermal resistance (RθJEC) of 5.0 °C/W, with heat conducted primarily through the tungsten slugs at both ends of the SQ-MELF package. Effective thermal management requires copper pads sized per datasheet recommendations (0.205" × 0.310") and optional center adhesive spot (0.090" diameter) for mechanical anchoring. Avoid thermal isolation-connect pads to internal ground planes or thermal vias to dissipate surge energy efficiently.
JAN1N6157AUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 32.7V
- Voltage - Breakdown (Min):
- 40.9V
- Voltage - Clamping (Max) @ Ipp:
- 59.1V
- Current - Peak Pulse (10/1000µs):
- 25.4A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6157AUS/TR FAQ
1.How can I place an order for JAN1N6157AUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6157AUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6157AUS/TR reliable?
The price and inventory of JAN1N6157AUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6157AUS/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6157AUS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6157AUS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6157AUS/TR?
JAN1N6157AUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6157AUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6157AUS/TR?
For technical support, including JAN1N6157AUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6157AUS/TR requirements.
6.How does Aetrix verify that JAN1N6157AUS/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6157AUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6157AUS/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6157AUS/TR?
All JAN1N6157AUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6157AUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6157AUS/TR part is unused and in its original packaging.
Return procedure for JAN1N6157AUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6157AUS/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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