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Microchip Technology JAN1N6158US/TR
- Part No.:
- JAN1N6158US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6158US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,240
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Product details
Overview
JAN1N6158US/TR from Microsemi is a voidless hermetically sealed, bidirectional Transient Voltage Suppressor (TVS) diode qualified to MIL-PRF-19500/516 at JAN level. It provides 35.8 V working peak standoff voltage (VWM), 44.7 V minimum breakdown voltage (V(BR)) at 25 mA, and clamps transients to 64.6 V at 23.2 A (10/1000 µs pulse), delivering 1500 W peak pulse power for lightning surge and ESD protection in high-reliability military avionics power rails.
For engineers reviewing the JAN1N6158US/TR datasheet, JAN1N6158US/TR pinout, JAN1N6158US/TR application, or JAN1N6158US/TR equivalent, this part supports critical transient suppression where failure tolerance, radiation hardness, and hermetic reliability are mandatory - especially in aerospace power input stages, MIL-STD-1275 compliant systems, and IEC61000-4-5 Level 3/4 protected interfaces.
Technical Context
This TVS operates bidirectionally with no polarity marking and uses hard-glass construction with internal Category 1 metallurgical bonds for high-reliability junction integrity. Its clamping behavior is defined by a 10/1000 µs double-exponential waveform, with thermal resistance junction-to-end cap (RθJEC) of 5.0 °C/W enabling stable operation up to 175 °C junction temperature.
The device exhibits a temperature coefficient of breakdown voltage (αV(BR)) of 0.095 %/°C and maintains ≤5 µA standby current (ID) at rated VWM, ensuring minimal leakage in always-on protection circuits across extended military temperature ranges (–55 °C to +175 °C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 35.8 V - Maximum continuous reverse voltage before conduction; sets operating margin for 28 V DC systems. |
| V(BR) min | 44.7 V @ 25 mA - Confirmed breakdown threshold; ensures reliable turn-on above normal transients. |
| VC @ IPP | 64.6 V @ 23.2 A - Clamping voltage during 10/1000 µs surge; limits downstream IC stress to safe levels. |
| PPP | 1500 W - Peak pulse power rating; meets MIL-STD-461G CS117 and IEC61000-4-5 Level 4 requirements. |
| ID @ VWM | ≤5 µA - Ultra-low leakage current; prevents battery drain or signal distortion in low-power standby modes. |
| TJ range | –55 °C to +175 °C - Full military temperature coverage; validated for engine bay and space-grade thermal cycling. |
| αV(BR) | 0.095 %/°C - Predictable V(BR) drift over temperature; enables accurate worst-case clamping margin analysis. |
Pinout & Package
Package: SQ-MELF (C package), hermetically sealed voidless hard glass with tungsten slugs; tin/lead plated copper terminals; weight ≈1100 mg; dimensions per Microsemi T4-LDS-0278-1 Rev. 2 (BD: 0.183–0.202", BL: 0.205–0.245").
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Transient conduction path | No polarity marking; symmetric structure allows placement without orientation check - reduces assembly error in high-reliability PCBs. |
| End Cap (both ends) | Thermal interface & mechanical anchor | Direct thermal path to PCB pad; RθJEC = 5.0 °C/W enables effective heat dissipation without heatsink in short-duration surges. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional transient suppression | Protects AC-coupled and dual-rail systems (e.g., MIL-STD-1553B data lines) without polarity constraints. |
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination - validated for 10+ year field life in humid, high-vibration environments. |
| Category 1 metallurgical bonds | Guarantees bond integrity under thermal shock and mechanical stress; required for JANS-level space qualification. |
| MIL-PRF-19500/516 JAN qualification | Meets screening, testing, and traceability standards for Class S (space) and Class B (military) applications. |
| Radiation hardness | Inherently radiation-tolerant per MicroNote 050; suitable for low-earth orbit satellite power conditioning without additional shielding. |
Applications
| Aerospace Power Input Protection | MIL-STD-1275 Vehicle Electrical Systems |
|---|---|
Use Scenario: Protecting 28 V DC power inputs in UAV flight control units against load dump and alternator spikes. IC Role / Device Role / Timing Role: Primary clamping element placed directly at connector entry point before DC/DC converters. Use Value: Limits transient overshoot to ≤64.6 V, preserving 75 V-rated input capacitors and preventing latch-up in downstream PMICs. | Use Scenario: Surge suppression on armored vehicle 28 V bus during cranking and generator regulation faults. IC Role / Device Role / Timing Role: Standoff-rated TVS absorbing 1500 W pulses per MIL-STD-1275E Figure 2a (load dump test). Use Value: Withstands ≥1000 surges at rated PPP without parameter shift - verified via accelerated life testing per MIL-PRF-19500. |
| Avionics Data Bus Interface Protection | Satellite Power Conditioning Units |
Use Scenario: Shielding ARINC 429 receivers from induced transients on long harness runs in commercial aircraft. IC Role / Device Role / Timing Role: Bidirectional clamp on differential pair, placed after common-mode choke but before receiver IC. Use Value: 0.095 %/°C αV(BR) ensures clamping stability across –55 °C to +70 °C cabin temperature swings. | Use Scenario: Input-stage surge protection in LEO satellite solar array regulators exposed to plasma discharge events. IC Role / Device Role / Timing Role: Radiation-hardened front-end TVS suppressing ESD and secondary lightning effects per IEC61000-4-5. Use Value: Hermetic seal and Category 1 bonds prevent parametric drift after 100 krad(Si) total ionizing dose exposure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6158AUS | Commercial-grade version; same VWM/V(BR)/VC specs but not MIL-qualified; RoHS-compliant matte-tin plating available. | Lacks JAN screening, burn-in, and radiation assurance; unsuitable for space or Class S programs. | Select when cost-sensitive industrial designs require identical electrical performance without military certification. |
| JANTXV1N6158US | Same hermetic SQ-MELF package and electrical specs; adds JANTXV-level screening (extended temp, vibration, thermal shock) and tighter lot traceability. | Approved for higher-reliability platforms including missile guidance and radar subsystems requiring JANTXV documentation. | Choose when system-level qualification mandates JANTXV screening beyond baseline JAN requirements. |
Compared with 1N6158AUS and JANTXV1N6158US, JAN1N6158US/TR delivers certified baseline military reliability at lower cost than JANTXV while maintaining full hermeticity and radiation tolerance - making it optimal for production avionics where JAN-level assurance suffices.
Availability
JAN1N6158US/TR is available at Aetrix Electronics and suitable for aerospace power input protection, MIL-STD-1275 vehicle systems, avionics data bus interfaces, and satellite power conditioning units requiring stable component supply across extended product lifecycles.
Supply support for JAN1N6158US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.
The JAN1N6158US/TR belongs to Microsemi's military-qualified TVS diode family designed specifically for mission-critical transient suppression where hermetic sealing, radiation tolerance, and MIL-PRF-19500 compliance are non-negotiable.
FAQ
What is the maximum clamping voltage of JAN1N6158US/TR under a 10/1000 µs surge?
The maximum clamping voltage (VC) of JAN1N6158US/TR is 64.6 V when subjected to a 23.2 A peak pulse current with a 10/1000 µs waveform. This value is measured per standard test conditions in Microsemi's T4-LDS-0278-1 datasheet and defines the upper voltage limit imposed on protected circuitry during transient events. JAN1N6158US/TR maintains this clamping performance across its full operating temperature range.
Is JAN1N6158US/TR suitable for RoHS-compliant designs?
No - JAN1N6158US/TR uses tin/lead plating per MIL-PRF-19500/516 requirements and is not RoHS compliant. RoHS-compliant versions (e.g., 1N6158AUS with matte-tin plating) are available only in commercial-grade variants. JAN1N6158US/TR retains leaded terminations to ensure solder joint reliability under thermal cycling and mechanical shock in military environments.
Does JAN1N6158US/TR have polarity markings for PCB layout?
No - JAN1N6158US/TR is a bidirectional TVS diode with no polarity marking on the SQ-MELF glass body. Its symmetrical construction allows mounting in either orientation, eliminating orientation errors during automated placement and simplifying layout for differential or AC-coupled protection paths. This feature is explicitly confirmed in the "POLARITY" section of the T4-LDS-0278-1 datasheet.
What is the thermal resistance specification for JAN1N6158US/TR?
JAN1N6158US/TR has a thermal resistance junction-to-end cap (RθJEC) of 5.0 °C/W, as specified in the Maximum Ratings table of Microsemi's T4-LDS-0278-1 datasheet. This low thermal resistance enables efficient heat transfer from the silicon junction to the PCB pads through the tungsten slugs and end caps, supporting reliable 1500 W pulse handling without external heatsinking in typical surface-mount configurations.
How does JAN1N6158US/TR meet IEC61000-4-5 surge immunity requirements?
JAN1N6158US/TR meets IEC61000-4-5 Level 4 (4 kV line-to-earth, 2 kV line-to-line) through its 1500 W peak pulse power rating and 64.6 V clamping voltage, which limit induced surge energy to safe levels for downstream ICs. Its hermetic glass package and Category 1 metallurgical bonds ensure parameter stability after repeated surges - a requirement validated in Microsemi's application notes referencing select IEC61000-4-5 test profiles.
JAN1N6158US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 35.8V
- Voltage - Breakdown (Min):
- 44.7V
- Voltage - Clamping (Max) @ Ipp:
- 64.6V
- Current - Peak Pulse (10/1000µs):
- 23.2A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6158US/TR FAQ
1.How can I place an order for JAN1N6158US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6158US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6158US/TR reliable?
The price and inventory of JAN1N6158US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6158US/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6158US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6158US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6158US/TR?
JAN1N6158US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6158US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6158US/TR?
For technical support, including JAN1N6158US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6158US/TR requirements.
6.How does Aetrix verify that JAN1N6158US/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6158US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6158US/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6158US/TR?
All JAN1N6158US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6158US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6158US/TR part is unused and in its original packaging.
Return procedure for JAN1N6158US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6158US/TR Tags
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