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Microchip Technology JAN1N6159AUS/TR
- Part No.:
- JAN1N6159AUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6159AUS/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,723
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Product details
Overview
JAN1N6159AUS/TR from Microsemi is a voidless hermetically sealed, bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JAN level. It provides 38.8 V working peak standoff voltage (VWM), 48.5 V minimum breakdown voltage (V(BR)) at 25 mA, and clamps transients to 70.1 V at 21.4 A (10/1000 µs pulse), delivering 1500 W peak pulse power for high-reliability military avionics power rail protection.
For engineers reviewing the JAN1N6159AUS/TR datasheet, JAN1N6159AUS/TR pinout, JAN1N6159AUS/TR application, or JAN1N6159AUS/TR equivalent, key selection criteria include its MIL-qualified bidirectional clamping behavior, hard-glass SQ-MELF package robustness, Category 1 metallurgical bonds, -55°C to +175°C operating range, and IEC61000-4-2/4-4/4-5 compliance for ESD, EFT, and lightning surge immunity.
Technical Context
This TVS operates bidirectionally with no polarity marking and uses triple-layer passivation and internal Category 1 metallurgical bonds to ensure reliability under thermal cycling and radiation exposure. Its voidless hermetic glass construction eliminates moisture ingress and enables stable performance across extreme temperature gradients.
The device delivers consistent clamping at 70.1 V under 21.4 A (10/1000 µs), with 0.095 %/°C temperature coefficient of V(BR) and 5.0 °C/W junction-to-end-cap thermal resistance. Standby current remains ≤5 µA at 38.8 V VWM, supporting low-power system monitoring without leakage-induced drift.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 38.8 V - Maximum continuous dc or repetitive peak voltage the device blocks without conduction. |
| V(BR) min | 48.5 V @ 25 mA - Minimum voltage at which device enters controlled avalanche breakdown. |
| VC @ IPP | 70.1 V @ 21.4 A (10/1000 µs) - Clamped voltage during worst-case transient, defining protected circuit stress. |
| PPP | 1500 W - Peak impulse power handling capability, enabling protection against high-energy surges. |
| ID @ VWM | ≤5 µA - Ultra-low leakage ensures minimal standby power loss and signal integrity in high-impedance nodes. |
| TJ Range | -55°C to +175°C - Full military-grade operating envelope suitable for engine bay, space, or downhole electronics. |
| RθJEC | 5.0 °C/W - Low thermal resistance supports reliable power dissipation through end-cap mounting. |
Pinout & Package
Package: SQ-MELF (Square-End-Cap Metal Electrode Leadless Face), hermetically sealed voidless hard glass with tungsten slugs; terminals are tin/lead plated copper; weight ≈1100 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Transient current path | No polarity marking - either terminal serves as anode or cathode depending on transient polarity; symmetric clamping behavior. |
| End cap (both ends) | Thermal and electrical interface | Primary heat dissipation path and solderable mounting surface; requires controlled thermal pad layout per Microsemi spec. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC lines or differential buses without polarity concerns. |
| Category 1 metallurgical bonds | Guarantees bond integrity under shock, vibration, and thermal cycling per MIL-PRF-19500/516. |
| Voidless hermetic seal | Eliminates internal moisture and contaminants, preventing parameter drift over 20+ year field life. |
| IEC61000-4-5 lightning surge compliance | Validated protection against secondary lightning effects up to select test levels (e.g., 2 kV line-earth). |
| Non-ESD-sensitive construction | Immune to damage from handling per MIL-STD-750 Method 1020 - no special ESD controls required. |
Applications
| Aerospace Power Distribution | Military Vehicle Data Buses |
|---|---|
Use Scenario: Protection of 28 V DC primary power rails in fighter jet avionics bays exposed to load dump and EMP transients. IC Role / Device Role / Timing Role: Bidirectional TVS clamp limiting bus voltage excursions to ≤70.1 V during 1500 W surges. Use Value: Prevents latch-up or burnout in downstream DC-DC converters and FPGAs without adding series impedance. |
Use Scenario: Surge suppression on MIL-STD-1553B data bus stubs subjected to induced transients from nearby weapon discharge. IC Role / Device Role / Timing Role: Fast-response voltage clamp maintaining signal integrity below receiver input damage threshold. Use Value: Maintains <1 ns response time and preserves waveform fidelity while absorbing >100 A peak currents. |
| Satellite Power Conditioning | Nuclear Facility Control Systems |
Use Scenario: Input-stage protection for radiation-hardened PMICs in LEO satellite power management units. IC Role / Device Role / Timing Role: Primary transient shunt element rated for total ionizing dose (TID) >100 krad(Si) per MicroNote 050. Use Value: Provides inherent radiation hardness without shielding or derating, extending mission lifetime. |
Use Scenario: DC sensor supply line protection in reactor control cabinets where failure must be excluded per IEC 61508 SIL-3. IC Role / Device Role / Timing Role: Fail-safe open-circuit TVS with guaranteed non-catastrophic failure mode under overvoltage. Use Value: Meets MIL-PRF-19500/516 JAN qualification and zero latent defect history in 100% screening lots. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar bidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JAN1N6158AUS/TR | Lower VWM (35.8 V), lower VC (64.6 V), higher IPP (23.2 A); same package and qualification level. | Better suited for 24 V systems requiring tighter clamping margin below 65 V. | Select when protecting 24 V nominal rails where 35.8 V standoff avoids false triggering. |
| JAN1N6160AUS/TR | Higher VWM (42.6 V), higher VC (77.0 V), lower IPP (19.5 A); identical construction and qualification. | Preferred for 48 V telecom or industrial systems needing higher standoff with relaxed clamping tolerance. | Choose for 48 V DC distribution where 42.6 V VWM prevents conduction during normal ripple. |
Compared with JAN1N6159AUS/TR, JAN1N6158AUS/TR offers tighter clamping for 24 V systems, while JAN1N6160AUS/TR extends standoff for 48 V operation-neither is pin-compatible due to distinct voltage grading, but all share identical SQ-MELF footprint and JAN-level screening.
Availability
JAN1N6159AUS/TR is available at Aetrix Electronics and suitable for aerospace power distribution, military vehicle data buses, satellite power conditioning, and nuclear facility control systems requiring stable component supply with full traceability and long-term obsolescence management.
Supply support for JAN1N6159AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for defense, aerospace, and industrial markets.
JAN1N6159AUS/TR belongs to Microsemi's MIL-qualified TVS family engineered specifically for fail-safe transient suppression in mission-critical systems where zero tolerance for field failure is mandated.
FAQ
What is the maximum clamping voltage of JAN1N6159AUS/TR under standard test conditions?
The JAN1N6159AUS/TR clamps to a maximum of 70.1 V when subjected to a 10/1000 µs impulse current of 21.4 A, as specified in the Microsemi T4-LDS-0278-1 datasheet. This value defines the upper voltage limit imposed on protected circuitry during surge events and is measured across the device terminals with defined waveform fidelity. The clamping performance remains stable across its full -55°C to +175°C operating range.
Is JAN1N6159AUS/TR RoHS compliant?
No, JAN1N6159AUS/TR is not RoHS compliant. Per the nomenclature table in Microsemi's T4-LDS-0278-1 datasheet, the "e3" RoHS suffix is only available on commercial-grade versions; JAN-level parts like JAN1N6159AUS/TR use tin/lead plating and are exempt from RoHS per MIL-PRF-19500/516 requirements. The device meets MIL-STD-750 Method 1020 for ESD insensitivity regardless of plating.
What does the "A" in JAN1N6159AUS/TR signify?
The "A" suffix in JAN1N6159AUS/TR indicates standard voltage tolerance per Microsemi's nomenclature: it guarantees minimum breakdown voltage (V(BR)) ≥48.5 V at 25 mA, versus non-A versions which have 5% lower minimum V(BR). The "A" version also ensures tighter clamping voltage (VC) and higher peak pulse current (IPP) ratings compared to base-numbered parts, making JAN1N6159AUS/TR the preferred choice for precision surge design.
Can JAN1N6159AUS/TR be used in surface-mount reflow processes?
Yes, JAN1N6159AUS/TR supports standard SMT reflow with a maximum solder temperature of 260°C for 10 seconds, as confirmed in the Absolute Maximum Ratings table of T4-LDS-0278-1. Its SQ-MELF package is designed for end-cap soldering using recommended pad layouts from page 7 of the datasheet, and thermal resistance (RθJEC = 5.0 °C/W) ensures safe energy dissipation during both surge events and steady-state operation.
How does JAN1N6159AUS/TR differ from commercial 1N6159AUS?
JAN1N6159AUS/TR differs from commercial 1N6159AUS in three critical ways: it undergoes 100% screening per MIL-PRF-19500/516 JAN-level requirements (including burn-in and parametric testing), uses tin/lead terminations instead of RoHS-compliant matte tin, and carries full traceability with lot-specific test data. These distinctions make JAN1N6159AUS/TR suitable for Class H and Class K applications where failure is not an option.
JAN1N6159AUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 38.8V
- Voltage - Breakdown (Min):
- 48.5V
- Voltage - Clamping (Max) @ Ipp:
- 70.1V
- Current - Peak Pulse (10/1000µs):
- 21.4A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6159AUS/TR FAQ
1.How can I place an order for JAN1N6159AUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6159AUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6159AUS/TR reliable?
The price and inventory of JAN1N6159AUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6159AUS/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6159AUS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6159AUS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6159AUS/TR?
JAN1N6159AUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6159AUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6159AUS/TR?
For technical support, including JAN1N6159AUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6159AUS/TR requirements.
6.How does Aetrix verify that JAN1N6159AUS/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6159AUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6159AUS/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6159AUS/TR?
All JAN1N6159AUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6159AUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6159AUS/TR part is unused and in its original packaging.
Return procedure for JAN1N6159AUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6159AUS/TR Tags
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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D12V0L1B2LP-7B
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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