My Inquiry
My Account
Microchip Technology JAN1N6159US/TR
- Part No.:
- JAN1N6159US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6159US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,164
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JAN1N6159US/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JAN level, with 38.8 V working peak standoff voltage (VWM), 70.1 V clamping voltage (VC) at 21.4 A peak pulse current (IPP), and 1500 W peak pulse power for 10/1000 µs waveform - deployed in avionics power rail protection and missile guidance interface circuits.
For engineers reviewing the JAN1N6159US/TR datasheet, JAN1N6159US/TR pinout, JAN1N6159US/TR application, or JAN1N6159US/TR equivalent, key selection criteria include military-grade reliability certification, bidirectional surge clamping performance under IEC61000-4-5 Level 3, thermal resistance of 5.0 °C/W junction-to-end cap, and compatibility with EIA-481-B tape-and-reel handling for automated SMT placement.
Technical Context
This TVS operates as a bidirectional voltage-clamping device with no polarity marking, leveraging hard-glass construction and Category 1 internal metallurgical bonds to sustain repeated 1500 W transients without degradation. Its breakdown voltage is 48.5 V ±5% at 25 mA test current, with temperature coefficient αV(BR) of 0.095 %/°C.
The device delivers ESD immunity per MIL-STD-750 Method 1020 and meets IEC61000-4-2 (ESD), -4-4 (EFT), and select levels of -4-5 (lightning-induced surges). It is rated for junction temperatures from –55 °C to +175 °C and features linear derating above 150 °C end-cap temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 38.8 V - maximum continuous reverse/forward voltage before conduction begins; sets operating margin for protected circuitry. |
| V(BR) | 48.5 V min @ 25 mA - guaranteed minimum breakdown threshold ensuring predictable clamping onset. |
| VC @ IPP | 70.1 V @ 21.4 A - clamped voltage during 10/1000 µs surge; defines worst-case overvoltage seen by downstream ICs. |
| PPP | 1500 W - peak transient energy absorption capability; supports MIL-STD-461 CS115/116 compliance testing. |
| TJ Range | –55 °C to +175 °C - enables deployment in extreme-environment military platforms including jet engine controllers and space-qualified telemetry. |
| RθJEC | 5.0 °C/W - low thermal resistance enables high-power dissipation without external heatsinking on standard FR4 PCBs. |
| ID @ VWM | 5 µA max - ultra-low leakage preserves battery life and signal integrity in always-on sensor interfaces. |
Pinout & Package
Package: SQ-MELF (C package), hermetically sealed voidless hard glass with tungsten slugs; terminals are tin/lead plated copper; weight ≈1100 mg; dimensions per Microsemi T4-LDS-0278-1 Rev. 2 (BD: 0.183–0.202", BL: 0.205–0.245").
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Surge current path | No polarity marking - symmetrical conduction allows single-component placement across differential or AC-coupled lines. |
| End Cap (both ends) | Thermal interface | Direct thermal path to PCB pads; RθJEC = 5.0 °C/W enables reliable 1500 W pulse handling without solder joint fatigue. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC signals, differential buses, and ungrounded power rails without polarity concerns. |
| Category 1 metallurgical bonds | Guarantees mechanical integrity and bond strength under shock/vibration per MIL-STD-883, critical for flight-critical systems. |
| Voidless hermetic seal | Eliminates moisture ingress and internal corrosion over 20+ year service life in humid or salt-laden environments. |
| MIL-PRF-19500/516 JAN qualification | Validated screening includes burn-in, temperature cycling, and lot acceptance testing - required for DoD procurement. |
| Triple-layer passivation | Prevents surface leakage and electrochemical migration under high humidity and bias stress conditions. |
Applications
| Avionics Power Distribution | Missile Guidance Interface |
|---|---|
Use Scenario: Protection of 28 V DC bus inputs in airborne radar subsystems against load dump and inductive switching transients. IC Role / Device Role / Timing Role: Bidirectional TVS clamping element placed directly at connector entry point to limit voltage excursions to <70.1 V. Use Value: Prevents latch-up and gate oxide damage in downstream FPGAs and ADCs during MIL-STD-704A transient events. | Use Scenario: Surge suppression on RS-422 differential command links between guidance computer and actuator control modules. IC Role / Device Role / Timing Role: Symmetrical clamping device across both A/B lines to maintain common-mode rejection during EFT bursts. Use Value: Maintains signal integrity under IEC61000-4-4 Level 4 (4 kV) while preserving <1 ns response time for real-time control loops. |
| Tactical Radio Front-End | Spacecraft Telemetry Bus |
Use Scenario: Input protection for HF/VHF receiver RF front-ends exposed to antenna-coupled lightning-induced surges. IC Role / Device Role / Timing Role: First-line transient suppressor mounted adjacent to SMA connector to shunt >1 kA surge currents before LNA input. Use Value: Withstands 1500 W pulses without parametric shift, ensuring post-surge receiver sensitivity recovery within 100 ms. | Use Scenario: Overvoltage protection on MIL-STD-1553B data bus stubs in satellite payload electronics. IC Role / Device Role / Timing Role: Bidirectional clamp on isolated bus transformer secondary to prevent insulation breakdown during spacecraft charging events. Use Value: Radiation-hardened construction (per MicroNote 050) ensures stable VWM and VC after 100 krad(Si) total ionizing dose exposure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6159AUS | Commercial-grade version; same VWM (38.8 V), VC (70.1 V), and IPP (21.4 A), but not MIL-qualified. | Lacks JAN-level screening, burn-in, and lot traceability; unsuitable for DoD contracts requiring MIL-PRF-19500/516. | Select only for non-military prototypes or commercial aerospace derivatives where cost drives qualification relaxation. |
| JANTX1N6159US/TR | Same electrical specs and SQ-MELF package; differs in screening level (JANTX vs JAN) - includes additional temperature cycling and parameter verification. | Approved for higher-reliability programs than JAN but below JANS; used in ground support equipment and UAV subsystems. | Choose when system-level reliability requirements exceed JAN but do not mandate full JANS radiation tolerance or extended temperature validation. |
Compared with 1N6159AUS and JANTX1N6159US/TR, the JAN1N6159US/TR provides the highest confidence in long-term parametric stability under mechanical shock and thermal cycling - essential for mission-critical launch vehicle avionics where field failure is unacceptable.
Availability
JAN1N6159US/TR is available at Aetrix Electronics and suitable for avionics power distribution, missile guidance interface, and tactical radio front-end designs requiring stable component supply across extended product lifecycles and defense procurement cycles.
Supply support for JAN1N6159US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for defense, aerospace, and industrial markets.
The JAN1N6159US/TR belongs to Microsemi's military-qualified TVS diode family designed specifically for survivability in harsh electromagnetic environments - emphasizing hermetic sealing, Category 1 bonding, and MIL-PRF-19500/516 compliance over commercial cost optimization.
FAQ
What is the clamping voltage of JAN1N6159US/TR under a 10/1000 µs surge?
The JAN1N6159US/TR has a maximum clamping voltage (VC) of 70.1 V when subjected to its rated peak pulse current of 21.4 A with a 10/1000 µs waveform. This value is measured per MIL-STD-750 Method 3013 and is guaranteed across the full military temperature range (–55 °C to +175 °C), making it suitable for use in high-reliability power rail protection where downstream ICs require strict overvoltage limits.
Is JAN1N6159US/TR RoHS compliant?
No, JAN1N6159US/TR is not RoHS compliant. Per Microsemi documentation, RoHS-compliant versions (marked with "e3") are available only for commercial-grade variants such as 1N6159AUS. The JAN1N6159US/TR uses tin/lead plating on copper terminals and is manufactured to meet MIL-PRF-19500/516 requirements, which permit leaded finishes for enhanced solder joint reliability in high-vibration military applications.
What does the "JAN" prefix signify for JAN1N6159US/TR?
"JAN" denotes Joint Army-Navy qualification - the highest baseline military reliability level under MIL-PRF-19500/516. For JAN1N6159US/TR, this includes 100% lot testing, extended temperature cycling (–55 °C to +125 °C), burn-in, and full traceability to wafer lot and assembly batch. It certifies suitability for mission-critical systems where zero field failures are mandated, such as flight control computers and secure communications hardware.
Can JAN1N6159US/TR be used in place of JAN1N6158US/TR?
No, JAN1N6159US/TR is not a direct replacement for JAN1N6158US/TR. While both share the same SQ-MELF package and 1500 W rating, their electrical parameters differ: JAN1N6158US/TR has VWM = 35.8 V and VC = 64.6 V, whereas JAN1N6159US/TR has VWM = 38.8 V and VC = 70.1 V. Substituting them requires revalidation of clamping margin and system-level surge immunity testing due to the 3 V higher standoff and 5.5 V higher clamping voltage.
What is the thermal resistance specification for JAN1N6159US/TR?
The JAN1N6159US/TR has a junction-to-end cap thermal resistance (RθJEC) of 5.0 °C/W, measured per MIL-STD-750 Method 1025. This low value reflects the device's tungsten slug construction and direct thermal path through both end caps to the PCB. It enables sustained 1500 W pulse handling without exceeding 175 °C junction temperature when mounted on adequately sized copper pads, eliminating need for external heatsinks in most military board layouts.
JAN1N6159US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 38.8V
- Voltage - Breakdown (Min):
- 48.5V
- Voltage - Clamping (Max) @ Ipp:
- 70.1V
- Current - Peak Pulse (10/1000µs):
- 21.4A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6159US/TR FAQ
1.How can I place an order for JAN1N6159US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6159US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6159US/TR reliable?
The price and inventory of JAN1N6159US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6159US/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6159US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6159US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6159US/TR?
JAN1N6159US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6159US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6159US/TR?
For technical support, including JAN1N6159US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6159US/TR requirements.
6.How does Aetrix verify that JAN1N6159US/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6159US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6159US/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6159US/TR?
All JAN1N6159US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6159US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6159US/TR part is unused and in its original packaging.
Return procedure for JAN1N6159US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6159US/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
