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Microchip Technology JAN1N6160AUS/TR
- Part No.:
- JAN1N6160AUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6160AUS/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,182
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Product details
Overview
JAN1N6160AUS/TR from Microsemi is a voidless hermetically sealed, bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JAN level. It provides 42.6 V working peak standoff voltage (VWM), 53.2 V minimum breakdown voltage (V(BR)) at 20 mA, and clamps to 77.0 V at 19.5 A peak pulse current (IPP) for 10/1000 µs waveform, delivering 1500 W peak pulse power in high-reliability military and aerospace systems.
For engineers reviewing the JAN1N6160AUS/TR datasheet, JAN1N6160AUS/TR pinout, JAN1N6160AUS/TR application, or JAN1N6160AUS/TR equivalent, key selection criteria include its MIL-qualified reliability level, bidirectional clamping behavior, glass-body thermal resistance (5.0 °C/W), standoff-to-clamp voltage ratio (42.6 V → 77.0 V), and compatibility with surface-mount reflow profiles up to 260 °C.
Technical Context
This TVS operates as a bidirectional silicon avalanche diode with Category 1 metallurgical bonds and triple-layer passivation, enabling robust ESD/EFT protection per IEC61000-4-2 and IEC61000-4-4. Its hard-glass hermetic seal ensures zero internal voids and immunity to moisture ingress under extreme thermal cycling.
The device exhibits a temperature coefficient of breakdown voltage (αV(BR)) of 0.095 %/°C and supports junction temperatures from –55 °C to +175 °C. Standby current remains ≤5 µA at VWM, and clamping performance is specified for 10/1000 µs impulses with <0.01% impulse repetition rate.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 42.6 V - Maximum continuous reverse voltage before conduction begins; defines circuit operating margin before clamping. |
| V(BR) min | 53.2 V @ 20 mA - Minimum avalanche breakdown threshold; ensures predictable turn-on under transient stress. |
| VC @ IPP | 77.0 V @ 19.5 A - Clamped voltage during 10/1000 µs surge; determines maximum stress imposed on protected ICs. |
| PPP | 1500 W - Peak pulse power handling capability; enables protection against lightning-induced surges per IEC61000-4-5. |
| RθJEC | 5.0 °C/W - Junction-to-end-cap thermal resistance; critical for thermal design when mounted to heat-spreading copper pads. |
| TJ/TSTG | –55 °C to +175 °C - Full military-grade operating and storage temperature range; validated for space and avionics use. |
| ID @ VWM | ≤5 µA - Ultra-low leakage at rated standoff; prevents signal path loading or battery drain in low-power systems. |
Pinout & Package
Package: SQ-MELF (Square-End-Cap Metal Electrode Leadless Face), hermetically sealed voidless hard glass with tungsten slugs; terminals are tin/lead plated copper; no polarity marking due to bidirectional symmetry.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Bidirectional avalanche junction | No functional distinction between ends; either terminal serves as anode or cathode depending on transient polarity. |
| End Cap (both ends) | Thermal and electrical interface | Directly contacts PCB copper for heat dissipation; requires full-surface solder pad contact per package drawing. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture paths and intermetallic degradation, ensuring >20-year field life in humid or vacuum environments. |
| Category 1 metallurgical bonds | Guarantees bond integrity under mechanical shock (>1000 g) and thermal shock (–55 °C ↔ +125 °C), required for JANS-level qualification. |
| Triple-layer passivation | Prevents surface leakage and contamination-induced parameter drift, maintaining stable V(BR) and ID over lifetime. |
| MIL-PRF-19500/516 JAN qualification | Validated screening includes burn-in, temperature cycling, and lot acceptance testing per military standard-no commercial-grade compromises. |
Applications
| Avionics Power Distribution | Military Radio Front-End |
|---|---|
Use Scenario: Protection of 28 V DC bus inputs in airborne mission computers against load dump and induced lightning transients. IC Role / Device Role / Timing Role: Bidirectional clamping element placed across input rails to limit voltage excursions to <77 V during 1500 W surges. Use Value: Prevents latch-up or gate oxide rupture in downstream DC/DC controllers and FPGAs by enforcing strict clamping envelope. |
Use Scenario: Surge suppression on RF transceiver antenna ports exposed to electrostatic discharge and nearby EMP events. IC Role / Device Role / Timing Role: Fast-response transient shunt connected between RF port and ground plane, leveraging sub-nanosecond response time. Use Value: Maintains signal integrity below –10 dBm noise floor while surviving 15 kV ESD per IEC61000-4-2 Level 4 without parameter shift. |
| Satellite Command & Data Handling | Tactical Vehicle Control Systems |
Use Scenario: Input protection for radiation-hardened microcontrollers receiving telemetry commands via RS-422 interfaces in LEO orbit. IC Role / Device Role / Timing Role: Standoff-rated TVS integrated into differential line filter network to suppress common-mode transients without affecting data eye. Use Value: Enables operation at –55 °C to +125 °C with no derating, preserving timing margins in 10 Mbps serial links. |
Use Scenario: 24 V CAN bus node protection in armored vehicle ECUs subjected to ISO 7637-2 Pulse 5a (load dump) and automotive EFT. IC Role / Device Role / Timing Role: Primary rail clamp on power entry point, coordinated with secondary polymer PTC for fault isolation. Use Value: Survives repeated 100 V/100 ms load dump events without parametric shift, verified per MIL-STD-1275B. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6160US/TR | Commercial-grade version; lacks MIL-PRF-19500/516 qualification, no JAN screening, higher VC tolerance (+5%), lower IPP (–5%). | Approved only for non-mission-critical industrial controls; not suitable for flight hardware or nuclear command systems. | Select only when cost sensitivity outweighs reliability requirements and environmental stress is bounded to <85 °C ambient. |
| JANTXV1N6160AUS/TR | Higher reliability screening (JANTXV level); tighter V(BR) distribution, extended temperature validation, enhanced lot traceability. | Required for Class S spaceflight components and DoD Tier 1 avionics; adds ~35% unit cost and longer lead time. | Choose when system safety integrity level (SIL) mandates failure-in-time <1 FIT or when radiation hardness per MIL-STD-883 Method 1019 is required. |
Compared with JAN1N6160AUS/TR, the commercial 1N6160US/TR trades qualification rigor for cost and availability, while JANTXV1N6160AUS/TR extends the same core TVS architecture into higher assurance domains-enabling tiered BOM strategies across prototype, qualification, and production phases.
Availability
JAN1N6160AUS/TR is available at Aetrix Electronics and suitable for avionics power distribution, military radio front-end protection, satellite command & data handling, and tactical vehicle control systems requiring stable component supply across long-lifecycle programs.
Supply support for JAN1N6160AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal devices for aerospace, defense, and industrial markets.
JAN1N6160AUS/TR belongs to Microsemi's MIL-qualified TVS family designed specifically for survivability in radiation-intensive, thermally extreme, and electrically hostile environments where single-point failures are unacceptable.
FAQ
What is the clamping voltage of JAN1N6160AUS/TR under a 10/1000 µs surge?
The JAN1N6160AUS/TR clamps to a maximum of 77.0 V when subjected to a 19.5 A peak pulse current with a 10/1000 µs waveform. This value is measured per MIL-STD-883 Method 3012 and is guaranteed across the full –55 °C to +125 °C operating range. The clamping voltage directly limits stress on downstream components such as DC/DC converters and FPGAs in JAN1N6160AUS/TR-protected circuits.
Is JAN1N6160AUS/TR RoHS compliant?
No, JAN1N6160AUS/TR is not RoHS compliant. Its terminations use tin/lead plating per MIL-PRF-19500/516 requirements, and RoHS-compliant matte-tin versions are available only in commercial-grade variants (e.g., 1N6160AUS/TR with e3 suffix). The JAN-level qualification mandates legacy termination chemistry for proven reliability under thermal cycling and high-humidity conditions.
What does the "A" suffix in JAN1N6160AUS/TR indicate?
The "A" suffix in JAN1N6160AUS/TR denotes standard voltage tolerance: ±5% on V(BR), ±5% on VC, and ±5% on IPP. Non-A versions (e.g., JAN1N6160US/TR) have looser tolerances-5% higher VC, 5% lower minimum V(BR), and 5% lower IPP-which reduce design margin for precision clamping applications. The "A" variant ensures tighter parametric control essential for MIL-qualified designs.
Can JAN1N6160AUS/TR be used in surface-mount reflow processes?
Yes, JAN1N6160AUS/TR is qualified for standard SnPb reflow profiles with a maximum solder temperature of 260 °C for 10 seconds. Its SQ-MELF glass body withstands thermal shock without cracking, and the end-cap terminations maintain wetting integrity. Reflow must follow Microsemi's recommended pad layout (0.205″ × 0.310″) and avoid excessive board warpage that could induce mechanical stress on the glass envelope.
How does JAN1N6160AUS/TR differ from commercial 1N6160US/TR beyond qualification level?
Beyond MIL-PRF-19500/516 screening, JAN1N6160AUS/TR features tighter V(BR) distribution (±5% vs. +5%/–10%), lower standby current (≤5 µA vs. ≤10 µA), and guaranteed performance at +175 °C junction temperature-whereas 1N6160US/TR is rated only to +150 °C. These differences directly impact long-term stability in high-temperature avionics bays and radiation-burdened satellite chassis where JAN1N6160AUS/TR is specified.
JAN1N6160AUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 42.6V
- Voltage - Breakdown (Min):
- 53.2V
- Voltage - Clamping (Max) @ Ipp:
- 77V
- Current - Peak Pulse (10/1000µs):
- 19.5A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6160AUS/TR FAQ
1.How can I place an order for JAN1N6160AUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6160AUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6160AUS/TR reliable?
The price and inventory of JAN1N6160AUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6160AUS/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6160AUS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6160AUS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6160AUS/TR?
JAN1N6160AUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6160AUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6160AUS/TR?
For technical support, including JAN1N6160AUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6160AUS/TR requirements.
6.How does Aetrix verify that JAN1N6160AUS/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6160AUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6160AUS/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6160AUS/TR?
All JAN1N6160AUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6160AUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6160AUS/TR part is unused and in its original packaging.
Return procedure for JAN1N6160AUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6160AUS/TR Tags
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Diodes Incorporated
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Diodes Incorporated
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