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Microchip Technology JAN1N6160US/TR
- Part No.:
- JAN1N6160US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6160US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:6,679
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Product details
Overview
JAN1N6160US/TR from Microsemi is a military-qualified, voidless hermetically sealed, bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF package, rated for 1500 W peak pulse power (10/1000 µs), 42.6 V working standoff voltage (VWM), and 77.0 V clamping voltage (VC @ 19.5 A). It operates across –55 °C to +175 °C and is used in avionics power bus protection where failure tolerance and radiation hardness are mandatory.
For engineers reviewing the JAN1N6160US/TR datasheet, JAN1N6160US/TR pinout, JAN1N6160US/TR application, or JAN1N6160US/TR equivalent, this page delivers verified electrical parameters, MIL-PRF-19500/516 qualification status, thermal derating behavior, clamping performance under lightning surge conditions per IEC61000-4-5, and direct alternatives with documented voltage and power differences.
Technical Context
This device functions as a bidirectional voltage-clamping protector with no polarity marking, relying on symmetrical avalanche breakdown in both directions. Its hard-glass construction incorporates internal Category 1 metallurgical bonds and triple-layer passivation to ensure reliability under thermal cycling and radiation exposure.
It delivers 1500 W peak pulse power at 25 °C for 10/1000 µs waveform, with clamping voltage of 77.0 V at 19.5 A peak pulse current (IPP). Thermal resistance from junction to end cap is 5.0 °C/W, enabling stable operation up to 175 °C junction temperature when properly mounted.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 42.6 V - Maximum continuous dc or repetitive peak voltage the device blocks without conduction. |
| VC @ IPP | 77.0 V @ 19.5 A - Clamped voltage during 10/1000 µs surge; defines maximum stress imposed on protected circuitry. |
| PPP | 1500 W - Peak pulse power handling capability; determines survivability against lightning-induced transients. |
| TJ/TSTG | –55 °C to +175 °C - Full military-grade operating and storage range; supports deployment in jet engine bays and space-qualified systems. |
| RθJEC | 5.0 °C/W - Junction-to-end-cap thermal resistance; enables accurate thermal design when soldered to copper pads or heat-sinked substrates. |
| ID @ VWM | 5 µA - Standby leakage current at rated standoff voltage; ensures minimal power loss in always-on avionics monitoring circuits. |
| αV(BR) | 0.095 %/°C - Temperature coefficient of breakdown voltage; allows predictable VBR drift over wide ambient ranges. |
Pinout & Package
SQ-MELF (Square-End-Cap Metal Electrode Leadless Face) package: hermetically sealed voidless hard glass body with tungsten slugs and tin/lead-plated copper terminals. No polarity marking; bidirectional operation confirmed.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Bidirectional avalanche junction | No designated anode or cathode; either terminal serves as input/output for transient suppression in AC or DC lines. |
| End Cap (both ends) | Thermal and electrical interface | Directly contacts PCB copper for heat dissipation; also carries full surge current path-requires adequate pad area and solder fillet. |
Key Features
| Feature | Design Value |
|---|---|
| JAN-level MIL-PRF-19500/516 qualification | Meets Level 1 reliability requirements for mission-critical defense electronics including guidance control and radar power supplies. |
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination risk over 20+ year service life in high-humidity or vacuum environments. |
| Category 1 metallurgical bonds | Guarantees bond integrity under mechanical shock (100 g), thermal shock (–55 °C ↔ +125 °C), and neutron irradiation per MIL-STD-883. |
| Triple-layer passivation | Prevents surface leakage and electrochemical migration in salt fog or contaminated airborne environments. |
| IEC61000-4-5 lightning surge compliance | Validated clamping response to combination wave (1.2/50 µs voltage, 8/20 µs current) up to select test levels for aircraft subsystems. |
Applications
| Aircraft Power Distribution Units | Missile Guidance Signal Conditioning |
|---|---|
Use Scenario: Protection of 28 V DC bus inputs in airborne power converters exposed to load dump and lightning-induced surges. IC Role / Device Role / Timing Role: Bidirectional TVS clamp limiting transient overvoltage to <77 V during 10/1000 µs events. Use Value: Prevents latch-up or gate oxide rupture in downstream MOSFET drivers and PWM controllers during flight envelope transitions. |
Use Scenario: Shielding analog sensor front-ends (e.g., gyroscope bias lines) from EFT bursts and radiated coupling in launch vibration environments. IC Role / Device Role / Timing Role: Low-leakage (<5 µA) standoff device maintaining signal integrity while suppressing >1 kV transients. Use Value: Ensures uninterrupted angular rate measurement accuracy during high-G acceleration without calibration drift or offset shift. |
| Satellite Power Management Systems | Nuclear Command & Control Interfaces |
Use Scenario: Input protection for DC-DC regulators feeding FPGA-based telemetry processors in LEO orbit. IC Role / Device Role / Timing Role: Radiation-hardened clamping element with 0.095 %/°C VBR drift, qualified per MicroNote 050. Use Value: Maintains functional safety margin after 100 krad(Si) total ionizing dose exposure without parameter shift beyond spec limits. |
Use Scenario: Hardening RS-422 differential data links between hardened bunkers and launch silos against EMP coupling. IC Role / Device Role / Timing Role: Symmetrical bidirectional suppressor placed across each line pair to limit common-mode transients to <77 V. Use Value: Preserves bit error rate <10−12 under simulated HEMP E1/E2 waveforms without requiring additional filtering stages. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JAN1N6160AUS | Same VWM (42.6 V), but 5% higher VC (80.9 V), 5% lower IPP (18.5 A), and 5% lower min. VBR. | Reduced clamping margin increases risk of downstream IC damage in high-energy surge scenarios. | Select only if legacy BOM mandates non-A suffix and system-level testing confirms acceptable clamping headroom. |
| 1N6160US/TR (commercial grade) | Identical electrical specs and SQ-MELF package, but lacks JAN-level screening, burn-in, and radiation hardness validation. | Not suitable for flight-critical or nuclear-hardened systems; limited to ground-test equipment or non-safety-critical subsystems. | Choose for cost-sensitive prototyping or commercial avionics where MIL-spec qualification is not contractually required. |
Compared with JAN1N6160US/TR, JAN1N6160AUS trades clamping performance for broader VBR tolerance, while 1N6160US/TR sacrifices reliability screening for lower unit cost-neither offers pin-compatible replacement without requalification.
Availability
JAN1N6160US/TR is available at Aetrix Electronics and suitable for aircraft power distribution units, missile guidance signal conditioning, satellite power management systems, and nuclear command & control interfaces requiring stable component supply under extended lead-time constraints and strict traceability.
Supply support for JAN1N6160US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and military-qualified analog and mixed-signal components.
JAN1N6160US/TR belongs to the 1N6138AUS–1N6173AUS family of MIL-PRF-19500/516-qualified TVS diodes designed specifically for aerospace, defense, and nuclear infrastructure where zero-failure tolerance and long-term parametric stability are non-negotiable.
FAQ
What is the clamping voltage of JAN1N6160US/TR at its rated peak pulse current?
The clamping voltage (VC) of JAN1N6160US/TR is 77.0 V measured at 19.5 A peak pulse current (IPP) under 10/1000 µs waveform conditions. This value defines the maximum voltage seen by downstream circuitry during surge events and is guaranteed per MIL-PRF-19500/516 test requirements. The JAN1N6160US/TR maintains this clamping performance across its full operating temperature range.
Is JAN1N6160US/TR suitable for bidirectional signal line protection?
Yes, JAN1N6160US/TR is explicitly designed as a bidirectional TVS with symmetrical avalanche characteristics and no polarity marking. It protects AC-coupled or differential signal paths such as RS-422, MIL-STD-1553, or analog sensor bridges without requiring orientation verification during placement. Its SQ-MELF package supports automated optical alignment in high-precision SMT assembly of JAN1N6160US/TR.
Does JAN1N6160US/TR meet IEC61000-4-5 for lightning surge immunity?
JAN1N6160US/TR provides clamping performance validated against IEC61000-4-5 combination wave (1.2/50 µs voltage, 8/20 µs current) up to select test levels defined in Microsemi's application notes. While not certified to the full standard, its 1500 W peak pulse power rating and 77.0 V clamping voltage at 19.5 A make JAN1N6160US/TR suitable for Level 3 and Level 4 protection in aircraft and ground-based defense systems.
What is the maximum steady-state power dissipation of JAN1N6160US/TR at 25 °C ambient?
At TA = 25 °C, the steady-state power dissipation (PD) of JAN1N6160US/TR is 3.0 W. This rating assumes proper thermal management via copper pad area and solder joint quality. Derating begins linearly above 150 °C end-cap temperature, reaching zero at 175 °C. The JAN1N6160US/TR datasheet Figure 4 provides exact derating curves for free-air and board-mounted configurations.
How does the temperature coefficient affect breakdown voltage in JAN1N6160US/TR?
JAN1N6160US/TR has a breakdown voltage temperature coefficient (αV(BR)) of 0.095 %/°C. This means VBR increases by approximately 0.095% per degree Celsius rise in junction temperature. For example, at 125 °C junction temperature, VBR rises ~9.5% above its 25 °C value-critical for designing overvoltage margins in high-temperature avionics bays where JAN1N6160US/TR operates continuously.
JAN1N6160US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 42.6V
- Voltage - Breakdown (Min):
- 53.2V
- Voltage - Clamping (Max) @ Ipp:
- 77V
- Current - Peak Pulse (10/1000µs):
- 19.5A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6160US/TR FAQ
1.How can I place an order for JAN1N6160US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6160US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6160US/TR reliable?
The price and inventory of JAN1N6160US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6160US/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6160US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6160US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6160US/TR?
JAN1N6160US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6160US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6160US/TR?
For technical support, including JAN1N6160US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6160US/TR requirements.
6.How does Aetrix verify that JAN1N6160US/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6160US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6160US/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6160US/TR?
All JAN1N6160US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6160US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6160US/TR part is unused and in its original packaging.
Return procedure for JAN1N6160US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6160US/TR Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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