Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology JAN1N6161AUS/TR

Part No.:
JAN1N6161AUS/TR
Manufacturer:
Microchip Technology
Category:
TVS Diodes
Package:
SQ-MELF, C
Datasheet:
AetrixJAN1N6161AUS/TR.pdf
Description:
BI-DIRECTIONAL TVS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,208

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

JAN1N6161AUS/TR from Microsemi is a voidless hermetically sealed, bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JAN level. It provides 47.1 V working standoff voltage (VWM), 58.9 V minimum breakdown voltage (V(BR)), 85.3 V clamping voltage (VC) at 17.6 A peak pulse current (IPP), and 1500 W peak pulse power for 10/1000 µs waveform - deployed in high-reliability military avionics power rail protection.

For engineers reviewing the JAN1N6161AUS/TR datasheet, JAN1N6161AUS/TR pinout, JAN1N6161AUS/TR application, or JAN1N6161AUS/TR equivalent, key selection criteria include its MIL-qualified reliability level, bidirectional clamping behavior, glass-body thermal resistance (5.0 °C/W), standoff-to-clamp voltage margin (ΔV = 38.2 V), and compatibility with EIA-481-B tape-and-reel handling.

Technical Context

This device operates as a bidirectional avalanche diode TVS, leveraging hard-glass encapsulation and Category 1 metallurgical bonds to sustain surge events without degradation. Its clamping response is defined by a 10/1000 µs double-exponential pulse, with thermal derating linear from 150 °C to zero at 175 °C junction temperature.

The JAN1N6161AUS/TR exhibits no polarity marking due to symmetrical bidirectional conduction, and its standoff voltage (47.1 V) is rated for continuous DC or repetitive peak cathode-to-anode bias. Standby leakage remains ≤5 µA at VWM, and temperature coefficient of V(BR) is +0.100 %/°C.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 47.1 V - maximum continuous reverse-bias voltage before clamping onset; defines safe operating window for protected circuitry.
V(BR) min 58.9 V @ 20 mA - guaranteed avalanche initiation threshold; ensures predictable turn-on under transient overvoltage.
VC @ IPP 85.3 V @ 17.6 A - clamped voltage during 10/1000 µs surge; determines worst-case stress on downstream components.
PPP 1500 W - peak impulse power handling capacity; supports IEC61000-4-5 lightning-induced surge immunity testing.
RθJEC 5.0 °C/W - junction-to-end-cap thermal resistance; enables direct heatsinking via end-cap mounting for sustained power dissipation.
TJ/TSTG –55 to +175 °C - operational and storage temperature range; validated for extended-life deployment in aerospace and defense platforms.
αV(BR) +0.100 %/°C - positive temperature coefficient ensures stable breakdown voltage across wide ambient ranges.

Pinout & Package

Package: SQ-MELF (C package), hermetically sealed voidless hard glass with tungsten slugs; square-end-cap terminals for automated placement; weight ≈1100 mg; dimensions per Microsemi T4-LDS-0278-1 Rev. 2 (Page 7).

Pin/Terminal Circuit Role Design Meaning
Anode/Cathode (bidirectional) Surge current path No polarity marking; symmetric conduction allows installation without orientation check; both ends serve identical clamping function.
End Cap (both ends) Thermal interface Directly bonded tungsten slug enables low-impedance heat transfer to PCB copper or heatsink; critical for thermal management above 5 W steady-state.

Key Features

Feature Design Value
Bidirectional clamping Enables single-device protection of AC-coupled or floating signal/power lines without polarity constraints.
Category 1 metallurgical bonds Guarantees bond integrity under mechanical shock, vibration, and thermal cycling per MIL-PRF-19500/516.
Voidless hermetic seal Prevents moisture ingress and internal corrosion over 20+ year field life in humid or salt-laden environments.
MIL-PRF-19500/516 qualification JAN-level screening includes lot acceptance tests, burn-in, and parametric verification - required for DoD procurement.
Triple-layer passivation Reduces surface leakage and enhances long-term stability of V(BR) and ID under high-humidity bias conditions.

Applications

Avionics Power Distribution Military Vehicle ECUs

Use Scenario: Protection of 28 V DC bus inputs against load dump and alternator transients in airborne mission computers.

IC Role / Device Role / Timing Role: Bidirectional TVS placed directly at connector entry point to clamp ±100 V spikes within 1 ns.

Use Value: Withstands 1500 W surges while maintaining <5 µA leakage at 47.1 V, preserving low-power standby integrity.

Use Scenario: Input-stage surge suppression for engine control units exposed to ISO 7637-2 Pulse 5a (load dump) in tracked vehicles.

IC Role / Device Role / Timing Role: Primary clamping element across main power rail, coordinated with upstream fuse and downstream LC filter.

Use Value: 85.3 V clamping voltage ensures downstream 50 V-rated DC-DC converters remain within absolute maximum ratings.

Satellite Power Conditioning Tactical Radio Front-Ends

Use Scenario: Secondary-side protection of regulated 48 V supplies feeding FPGAs and ADCs in LEO satellite payloads.

IC Role / Device Role / Timing Role: Standoff-rated TVS absorbing ESD events (IEC61000-4-2 ±15 kV contact) and secondary lightning coupling.

Use Value: Radiation-hardened construction (per MicroNote 050) and –55 to +175 °C operation support unattended orbital deployment.

Use Scenario: RF front-end power input protection in manpack radios subjected to EFT bursts (IEC61000-4-4) and antenna-coupled surges.

IC Role / Device Role / Timing Role: Fast-response bidirectional suppressor placed before DC-DC converter and PA bias rails.

Use Value: Square-end-cap geometry enables precise pick-and-place alignment; hermetic seal prevents outgassing in vacuum-sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N6161AUS (commercial) No JAN-level screening; lacks MIL-PRF-19500/516 qualification; same electrical specs and package. Not approved for DoD or space programs requiring JAN reliability level; suitable for industrial prototypes. Select only when MIL-spec compliance is not mandated and cost sensitivity outweighs lifetime assurance.
JAN1N6160AUS/TR Lower VWM (42.6 V), lower VC (77.0 V), higher IPP (19.5 A); otherwise identical construction and qualification. Better suited for 36 V nominal systems where tighter clamping margin is required. Choose when system operating voltage is ≤36 V and lower clamping voltage improves downstream component safety margin.

Compared with JAN1N6161AUS/TR, the commercial 1N6161AUS omits military screening but retains full electrical equivalence, while JAN1N6160AUS/TR offers improved clamping performance at reduced standoff - enabling optimized trade-offs between voltage headroom and surge robustness in 28–48 V platforms.

Availability

JAN1N6161AUS/TR is available at Aetrix Electronics and suitable for avionics power distribution, military vehicle ECUs, satellite power conditioning, and tactical radio front-ends requiring stable component supply under extended lifecycle commitments.

Supply support for JAN1N6161AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and MIL-qualified components.

The JAN1N6161AUS/TR belongs to Microsemi's legacy 1N61xxAUS series of hermetically sealed TVS diodes, engineered specifically for mission-critical surge protection where failure is not an option.

FAQ

What does the "JAN" prefix signify for JAN1N6161AUS/TR?

The "JAN" prefix indicates that JAN1N6161AUS/TR is manufactured and tested to the highest reliability level under MIL-PRF-19500/516, including rigorous lot acceptance testing, burn-in, and parametric verification. This qualification is mandatory for U.S. Department of Defense procurement and ensures proven performance in extreme environments - a distinction not shared by commercial-grade variants like 1N6161AUS.

Is JAN1N6161AUS/TR bidirectional, and how does that affect circuit layout?

Yes, JAN1N6161AUS/TR is inherently bidirectional due to its symmetrical avalanche structure and absence of polarity marking. This eliminates orientation constraints during placement - both terminals function identically as anode/cathode depending on transient polarity. Layout requires no directional routing, simplifying PCB design for AC-coupled or floating interfaces where polarity reversal may occur.

What is the thermal management requirement for JAN1N6161AUS/TR in continuous operation?

JAN1N6161AUS/TR has a junction-to-end-cap thermal resistance of 5.0 °C/W. For steady-state power dissipation up to its 5.0 W rating (at TEC = 150 °C), end-cap soldering to thermally robust PCB copper or external heatsinks is essential. Derating is linear to zero at 175 °C, so thermal design must ensure end-cap temperature stays below 150 °C under worst-case ambient and power conditions.

How does JAN1N6161AUS/TR meet IEC61000-4-5 lightning surge requirements?

JAN1N6161AUS/TR delivers 1500 W peak pulse power for the standardized 10/1000 µs waveform defined in IEC61000-4-5, with a clamping voltage of 85.3 V at 17.6 A. This performance enables it to protect downstream 50 V-rated components during Level 3 (2 kV line-earth) and Level 4 (4 kV line-earth) tests when properly coordinated with impedance-matching filters and grounding strategies.

Can JAN1N6161AUS/TR be used in RoHS-compliant assemblies?

No - JAN1N6161AUS/TR uses tin/lead plating per MIL-PRF-19500/516 requirements and is not RoHS compliant. RoHS-compliant matte-tin termination is available only on commercial-grade versions (e.g., 1N6161AUS) and is explicitly excluded from JAN-level parts to maintain proven reliability under thermal and mechanical stress.

JAN1N6161AUS/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Package/Case:
SQ-MELF, C
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
-
Bidirectional Channels:
1
Voltage - Reverse Standoff (Typ):
47.1V
Voltage - Breakdown (Min):
58.9V
Voltage - Clamping (Max) @ Ipp:
85.3V
Current - Peak Pulse (10/1000µs):
17.6A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Military
Qualification:
MIL-PRF-19500/516
Mounting Type:
Surface Mount
Supplier Device Package:
C, SQ-MELF

JAN1N6161AUS/TR FAQ

1.How can I place an order for JAN1N6161AUS/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for JAN1N6161AUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JAN1N6161AUS/TR reliable?

The price and inventory of JAN1N6161AUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6161AUS/TR is usually 5 days.

3.What payment methods are accepted for JAN1N6161AUS/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6161AUS/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for JAN1N6161AUS/TR?

JAN1N6161AUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JAN1N6161AUS/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JAN1N6161AUS/TR?

For technical support, including JAN1N6161AUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6161AUS/TR requirements.

6.How does Aetrix verify that JAN1N6161AUS/TR is sourced from the original manufacturer or authorized distributors?

All JAN1N6161AUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6161AUS/TR meets industry standards.

7.What is the process for return or replacement of JAN1N6161AUS/TR?

All JAN1N6161AUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6161AUS/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JAN1N6161AUS/TR part is unused and in its original packaging.

Return procedure for JAN1N6161AUS/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

JAN1N6161AUS/TR Tags

  • JAN1N6161AUS/TR
  • JAN1N6161AUS/TR PDF
  • JAN1N6161AUS/TR Datasheet
  • JAN1N6161AUS/TR Specifications
  • JAN1N6161AUS/TR Images
  • Microchip Technology
  • Microchip Technology JAN1N6161AUS/TR
  • Buy JAN1N6161AUS/TR
  • JAN1N6161AUS/TR Price
  • JAN1N6161AUS/TR Distributor
  • JAN1N6161AUS/TR Supplier
  • JAN1N6161AUS/TR Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER