Microchip Technology JAN1N6161AUS/TR
- Part No.:
- JAN1N6161AUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6161AUS/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

Inventory:4,208
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Product details
Overview
JAN1N6161AUS/TR from Microsemi is a voidless hermetically sealed, bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JAN level. It provides 47.1 V working standoff voltage (VWM), 58.9 V minimum breakdown voltage (V(BR)), 85.3 V clamping voltage (VC) at 17.6 A peak pulse current (IPP), and 1500 W peak pulse power for 10/1000 µs waveform - deployed in high-reliability military avionics power rail protection.
For engineers reviewing the JAN1N6161AUS/TR datasheet, JAN1N6161AUS/TR pinout, JAN1N6161AUS/TR application, or JAN1N6161AUS/TR equivalent, key selection criteria include its MIL-qualified reliability level, bidirectional clamping behavior, glass-body thermal resistance (5.0 °C/W), standoff-to-clamp voltage margin (ΔV = 38.2 V), and compatibility with EIA-481-B tape-and-reel handling.
Technical Context
This device operates as a bidirectional avalanche diode TVS, leveraging hard-glass encapsulation and Category 1 metallurgical bonds to sustain surge events without degradation. Its clamping response is defined by a 10/1000 µs double-exponential pulse, with thermal derating linear from 150 °C to zero at 175 °C junction temperature.
The JAN1N6161AUS/TR exhibits no polarity marking due to symmetrical bidirectional conduction, and its standoff voltage (47.1 V) is rated for continuous DC or repetitive peak cathode-to-anode bias. Standby leakage remains ≤5 µA at VWM, and temperature coefficient of V(BR) is +0.100 %/°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 47.1 V - maximum continuous reverse-bias voltage before clamping onset; defines safe operating window for protected circuitry. |
| V(BR) min | 58.9 V @ 20 mA - guaranteed avalanche initiation threshold; ensures predictable turn-on under transient overvoltage. |
| VC @ IPP | 85.3 V @ 17.6 A - clamped voltage during 10/1000 µs surge; determines worst-case stress on downstream components. |
| PPP | 1500 W - peak impulse power handling capacity; supports IEC61000-4-5 lightning-induced surge immunity testing. |
| RθJEC | 5.0 °C/W - junction-to-end-cap thermal resistance; enables direct heatsinking via end-cap mounting for sustained power dissipation. |
| TJ/TSTG | –55 to +175 °C - operational and storage temperature range; validated for extended-life deployment in aerospace and defense platforms. |
| αV(BR) | +0.100 %/°C - positive temperature coefficient ensures stable breakdown voltage across wide ambient ranges. |
Pinout & Package
Package: SQ-MELF (C package), hermetically sealed voidless hard glass with tungsten slugs; square-end-cap terminals for automated placement; weight ≈1100 mg; dimensions per Microsemi T4-LDS-0278-1 Rev. 2 (Page 7).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Surge current path | No polarity marking; symmetric conduction allows installation without orientation check; both ends serve identical clamping function. |
| End Cap (both ends) | Thermal interface | Directly bonded tungsten slug enables low-impedance heat transfer to PCB copper or heatsink; critical for thermal management above 5 W steady-state. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC-coupled or floating signal/power lines without polarity constraints. |
| Category 1 metallurgical bonds | Guarantees bond integrity under mechanical shock, vibration, and thermal cycling per MIL-PRF-19500/516. |
| Voidless hermetic seal | Prevents moisture ingress and internal corrosion over 20+ year field life in humid or salt-laden environments. |
| MIL-PRF-19500/516 qualification | JAN-level screening includes lot acceptance tests, burn-in, and parametric verification - required for DoD procurement. |
| Triple-layer passivation | Reduces surface leakage and enhances long-term stability of V(BR) and ID under high-humidity bias conditions. |
Applications
| Avionics Power Distribution | Military Vehicle ECUs |
|---|---|
Use Scenario: Protection of 28 V DC bus inputs against load dump and alternator transients in airborne mission computers. IC Role / Device Role / Timing Role: Bidirectional TVS placed directly at connector entry point to clamp ±100 V spikes within 1 ns. Use Value: Withstands 1500 W surges while maintaining <5 µA leakage at 47.1 V, preserving low-power standby integrity. |
Use Scenario: Input-stage surge suppression for engine control units exposed to ISO 7637-2 Pulse 5a (load dump) in tracked vehicles. IC Role / Device Role / Timing Role: Primary clamping element across main power rail, coordinated with upstream fuse and downstream LC filter. Use Value: 85.3 V clamping voltage ensures downstream 50 V-rated DC-DC converters remain within absolute maximum ratings. |
| Satellite Power Conditioning | Tactical Radio Front-Ends |
Use Scenario: Secondary-side protection of regulated 48 V supplies feeding FPGAs and ADCs in LEO satellite payloads. IC Role / Device Role / Timing Role: Standoff-rated TVS absorbing ESD events (IEC61000-4-2 ±15 kV contact) and secondary lightning coupling. Use Value: Radiation-hardened construction (per MicroNote 050) and –55 to +175 °C operation support unattended orbital deployment. |
Use Scenario: RF front-end power input protection in manpack radios subjected to EFT bursts (IEC61000-4-4) and antenna-coupled surges. IC Role / Device Role / Timing Role: Fast-response bidirectional suppressor placed before DC-DC converter and PA bias rails. Use Value: Square-end-cap geometry enables precise pick-and-place alignment; hermetic seal prevents outgassing in vacuum-sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6161AUS (commercial) | No JAN-level screening; lacks MIL-PRF-19500/516 qualification; same electrical specs and package. | Not approved for DoD or space programs requiring JAN reliability level; suitable for industrial prototypes. | Select only when MIL-spec compliance is not mandated and cost sensitivity outweighs lifetime assurance. |
| JAN1N6160AUS/TR | Lower VWM (42.6 V), lower VC (77.0 V), higher IPP (19.5 A); otherwise identical construction and qualification. | Better suited for 36 V nominal systems where tighter clamping margin is required. | Choose when system operating voltage is ≤36 V and lower clamping voltage improves downstream component safety margin. |
Compared with JAN1N6161AUS/TR, the commercial 1N6161AUS omits military screening but retains full electrical equivalence, while JAN1N6160AUS/TR offers improved clamping performance at reduced standoff - enabling optimized trade-offs between voltage headroom and surge robustness in 28–48 V platforms.
Availability
JAN1N6161AUS/TR is available at Aetrix Electronics and suitable for avionics power distribution, military vehicle ECUs, satellite power conditioning, and tactical radio front-ends requiring stable component supply under extended lifecycle commitments.
Supply support for JAN1N6161AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and MIL-qualified components.
The JAN1N6161AUS/TR belongs to Microsemi's legacy 1N61xxAUS series of hermetically sealed TVS diodes, engineered specifically for mission-critical surge protection where failure is not an option.
FAQ
What does the "JAN" prefix signify for JAN1N6161AUS/TR?
The "JAN" prefix indicates that JAN1N6161AUS/TR is manufactured and tested to the highest reliability level under MIL-PRF-19500/516, including rigorous lot acceptance testing, burn-in, and parametric verification. This qualification is mandatory for U.S. Department of Defense procurement and ensures proven performance in extreme environments - a distinction not shared by commercial-grade variants like 1N6161AUS.
Is JAN1N6161AUS/TR bidirectional, and how does that affect circuit layout?
Yes, JAN1N6161AUS/TR is inherently bidirectional due to its symmetrical avalanche structure and absence of polarity marking. This eliminates orientation constraints during placement - both terminals function identically as anode/cathode depending on transient polarity. Layout requires no directional routing, simplifying PCB design for AC-coupled or floating interfaces where polarity reversal may occur.
What is the thermal management requirement for JAN1N6161AUS/TR in continuous operation?
JAN1N6161AUS/TR has a junction-to-end-cap thermal resistance of 5.0 °C/W. For steady-state power dissipation up to its 5.0 W rating (at TEC = 150 °C), end-cap soldering to thermally robust PCB copper or external heatsinks is essential. Derating is linear to zero at 175 °C, so thermal design must ensure end-cap temperature stays below 150 °C under worst-case ambient and power conditions.
How does JAN1N6161AUS/TR meet IEC61000-4-5 lightning surge requirements?
JAN1N6161AUS/TR delivers 1500 W peak pulse power for the standardized 10/1000 µs waveform defined in IEC61000-4-5, with a clamping voltage of 85.3 V at 17.6 A. This performance enables it to protect downstream 50 V-rated components during Level 3 (2 kV line-earth) and Level 4 (4 kV line-earth) tests when properly coordinated with impedance-matching filters and grounding strategies.
Can JAN1N6161AUS/TR be used in RoHS-compliant assemblies?
No - JAN1N6161AUS/TR uses tin/lead plating per MIL-PRF-19500/516 requirements and is not RoHS compliant. RoHS-compliant matte-tin termination is available only on commercial-grade versions (e.g., 1N6161AUS) and is explicitly excluded from JAN-level parts to maintain proven reliability under thermal and mechanical stress.
JAN1N6161AUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 47.1V
- Voltage - Breakdown (Min):
- 58.9V
- Voltage - Clamping (Max) @ Ipp:
- 85.3V
- Current - Peak Pulse (10/1000µs):
- 17.6A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6161AUS/TR FAQ
1.How can I place an order for JAN1N6161AUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6161AUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6161AUS/TR reliable?
The price and inventory of JAN1N6161AUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6161AUS/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6161AUS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6161AUS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6161AUS/TR?
JAN1N6161AUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6161AUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6161AUS/TR?
For technical support, including JAN1N6161AUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6161AUS/TR requirements.
6.How does Aetrix verify that JAN1N6161AUS/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6161AUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6161AUS/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6161AUS/TR?
All JAN1N6161AUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6161AUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6161AUS/TR part is unused and in its original packaging.
Return procedure for JAN1N6161AUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6161AUS/TR Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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