Microchip Technology JAN1N6161US/TR
- Part No.:
- JAN1N6161US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6161US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

Inventory:8,543
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JAN1N6161US/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JAN level, with 47.1 V working standoff voltage (VWM), 58.9 V minimum breakdown voltage (V(BR)), and 85.3 V clamping voltage (VC) at 17.6 A peak pulse current (IPP); it delivers 1500 W peak pulse power for 10/1000 µs transients in high-reliability military avionics power rail protection.
For engineers reviewing the JAN1N6161US/TR datasheet, JAN1N6161US/TR pinout, JAN1N6161US/TR application, or JAN1N6161US/TR equivalent, this part supports ESD/EFT/IEC61000-4-2/4-4 compliance, lightning secondary-effect mitigation per IEC61000-4-5, and operates across –55 °C to +175 °C junction temperature with Category 1 metallurgical bonds and triple-layer passivation.
Technical Context
This TVS diode employs a hard-glass, voidless hermetic construction with tungsten slugs and tin/lead-plated copper terminals, enabling robust surge handling without degradation under repeated 10/1000 µs transients. Its bidirectional architecture provides symmetrical clamping for AC-coupled or floating signal/power lines, and its Category 1 internal metallurgical bonds ensure mechanical integrity under thermal cycling and shock.
The device exhibits a 0.100 %/°C temperature coefficient of breakdown voltage (αV(BR)), supporting stable clamping performance over wide temperature ranges. It is rated for 5.0 W off-state power at TEC = 150 °C with linear derating to zero at 175 °C, and maintains ≤5 µA standby current (ID) at VWM, minimizing leakage in always-on protection circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 47.1 V - Maximum continuous DC/repetitive peak voltage before conduction begins; sets operating margin below clamping threshold. |
| V(BR) min | 58.9 V @ 20 mA - Minimum voltage at which device enters avalanche breakdown; defines lower bound of functional clamping window. |
| VC @ IPP | 85.3 V @ 17.6 A - Clamped voltage during 10/1000 µs transient; determines maximum stress imposed on protected circuitry. |
| PPP | 1500 W - Peak pulse power rating; enables suppression of high-energy surges such as lightning-induced coupling. |
| ID @ VWM | 5 µA - Standby leakage current; ensures minimal power loss and no false triggering in low-power systems. |
| αV(BR) | 0.100 %/°C - Temperature coefficient of breakdown voltage; allows predictable V(BR) shift across –55 °C to +175 °C operation. |
| TJ/TSTG | –55 °C to +175 °C - Junction and storage temperature range; supports deployment in extreme-environment aerospace and defense platforms. |
Pinout & Package
Package: SQ-MELF (C package), hermetically sealed voidless hard glass with tungsten slugs; dimensions: BD = 0.183–0.202 in (4.65–5.13 mm), BL = 0.205–0.245 in (5.21–6.22 mm), ECT = 0.019–0.028 in (0.48–0.71 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current entry (bidirectional) | No polarity marking; either terminal serves as anode or cathode depending on transient polarity-enables symmetric protection without orientation constraints. |
| Cathode | Transient current exit (bidirectional) | Functionally identical to Anode due to bidirectional structure; terminals are interchangeable in layout and mounting. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC signals or ungrounded DC rails without polarity concerns or external diode pairing. |
| Category 1 metallurgical bonds | Guarantees bond integrity under thermal shock and vibration-critical for MIL-STD-810G-compliant avionics and space-qualified subsystems. |
| Triple-layer passivation | Prevents moisture ingress and surface contamination in humid or salt-laden environments, extending field life in naval and airborne deployments. |
| MIL-PRF-19500/516 qualification | Validates reliability at JAN level-including screening for parametric stability, burn-in, and lot acceptance testing per military standards. |
| Voidless hermetic seal | Eliminates internal delamination risk under rapid thermal transients, ensuring consistent clamping performance over >10,000 surge events. |
Applications
| Aerospace Power Distribution | Military Radio Front-End Protection |
|---|---|
Use Scenario: Protecting 28 V DC bus inputs in satellite power management units against load dump and lightning-induced surges. IC Role / Device Role / Timing Role: Bidirectional TVS device clamping transient overvoltage on primary power rail upstream of DC/DC converters and battery chargers. Use Value: Withstands 1500 W 10/1000 µs pulses while maintaining <85.3 V clamping, preventing damage to downstream FETs and controllers in radiation-hardened systems. | Use Scenario: Shielding RF amplifier input stages in tactical HF/VHF radios from ESD and antenna-coupled EMP. IC Role / Device Role / Timing Role: Fast-response transient suppressor placed directly at SMA connector feedthrough to limit voltage excursion before LNA input. Use Value: 5 µA leakage at 47.1 V standoff preserves receiver sensitivity; bidirectional symmetry avoids insertion loss asymmetry in balanced RF paths. |
| Naval Shipboard Control Systems | Ground Vehicle Engine Control Units |
Use Scenario: Safeguarding CAN and RS-485 communication ports on shipboard automation modules exposed to salt fog and EFT bursts. IC Role / Device Role / Timing Role: Secondary-level TVS on data line pairs, coordinated with common-mode chokes to meet IEC61000-4-4 Level 4 immunity. Use Value: 0.100 %/°C αV(BR) ensures stable clamping across –40 °C to +85 °C ambient, critical for unheated deckhouse enclosures. | Use Scenario: Protecting 12 V sensor supply lines in diesel engine control units subjected to ISO 7637-2 Pulse 1/2/5a transients. IC Role / Device Role / Timing Role: Primary overvoltage clamp on microcontroller VDD rail, placed adjacent to power entry point before bulk capacitance. Use Value: Hermetic SQ-MELF package resists thermal fatigue from engine bay cycling (–40 °C to +125 °C), unlike plastic-packaged alternatives prone to moisture-induced failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6161US | Same electrical specs but qualified to JANTXV level with enhanced screening (e.g., 100% burn-in, extended temperature testing). | Required for programs mandating JANTXV reliability assurance (e.g., DoD Class H systems). | Select when higher reliability screening and tighter parametric limits are contractually required. |
| 1N6161AUS | Commercial-grade version; same VWM, V(BR), VC, and PPP, but not MIL-qualified and RoHS-compliant (matte-tin plating). | Suitable for non-military industrial designs where cost and RoHS compliance outweigh military qualification needs. | Choose for commercial aerospace derivatives or ground-based test equipment where MIL-spec is unnecessary. |
Compared with JAN1N6161US/TR, JANTXV1N6161US adds screening rigor without altering electrical behavior, while 1N6161AUS trades qualification for RoHS compliance and lower cost-making the JAN variant optimal for legacy military hardware requiring traceable JAN-level sourcing and leaded terminations.
Availability
JAN1N6161US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, military radio front-end protection, naval shipboard control systems, and ground vehicle engine control units requiring stable component supply with full traceability and long-term obsolescence management.
Supply support for JAN1N6161US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for defense, aerospace, and industrial markets.
The 1N6138AUS–1N6173AUS family was designed specifically for military-grade transient suppression in mission-critical platforms where failure is unacceptable-emphasizing hermeticity, surge endurance, and MIL-PRF-19500/516 compliance over cost or consumer-grade features.
FAQ
What is the clamping voltage of JAN1N6161US/TR and how is it measured?
The clamping voltage (VC) of JAN1N6161US/TR is 85.3 V, measured at 17.6 A peak pulse current (IPP) using a standardized 10/1000 µs double-exponential waveform per MIL-STD-750 Method 3019. This value represents the maximum voltage seen across the device during surge conduction and directly determines the stress imposed on protected circuitry. The JAN1N6161US/TR maintains this clamping performance across its full operating temperature range due to its 0.100 %/°C αV(BR).
Is JAN1N6161US/TR RoHS compliant?
No, JAN1N6161US/TR is not RoHS compliant. It uses traditional tin/lead plating on copper terminals, consistent with MIL-PRF-19500/516 requirements for JAN-level devices. RoHS-compliant versions (e.g., 1N6161AUS) are available only in commercial-grade variants with matte-tin plating and lack military qualification. The JAN1N6161US/TR remains intentionally non-RoHS to preserve solderability, thermal fatigue resistance, and proven field reliability in legacy defense systems.
What does the "TR" suffix indicate in JAN1N6161US/TR?
"TR" denotes tape-and-reel packaging per EIA-481-B standard, enabling automated SMT placement. The JAN1N6161US/TR is supplied in moisture-sensitive packaging with dry nitrogen environment and humidity indicator cards, conforming to J-STD-033 requirements for hermetic devices. This format supports high-volume manufacturing while preserving the device's hermetic integrity until reflow-critical for maintaining the JAN1N6161US/TR's MIL-qualified reliability in production lines.
How does JAN1N6161US/TR differ from commercial 1N6161US?
JAN1N6161US/TR is screened and tested to MIL-PRF-19500/516 JAN-level requirements-including lot acceptance tests, parametric verification, and environmental stress screening-while the commercial 1N6161US lacks military qualification, has wider parameter tolerances, and uses non-hermetic packaging. The JAN1N6161US/TR also features leaded terminations and voidless hermetic sealing, whereas the commercial version may use alternate plating or packaging incompatible with high-reliability deployment.
Can JAN1N6161US/TR be used in place of JAN1N6160US or JAN1N6162US?
No-JAN1N6161US/TR is not a direct substitute for JAN1N6160US (VWM = 42.6 V) or JAN1N6162US (VWM = 51.7 V), as each part targets a distinct standoff voltage window. Substitution would compromise protection margin: using JAN1N6161US/TR where JAN1N6160US is specified risks premature clamping, while replacing JAN1N6162US risks insufficient clamping headroom. The JAN1N6161US/TR must be selected based on exact system VWM requirements (47.1 V) and verified transient profile compatibility.
JAN1N6161US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 47.1V
- Voltage - Breakdown (Min):
- 58.9V
- Voltage - Clamping (Max) @ Ipp:
- 85.3V
- Current - Peak Pulse (10/1000µs):
- 17.6A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6161US/TR FAQ
1.How can I place an order for JAN1N6161US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6161US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6161US/TR reliable?
The price and inventory of JAN1N6161US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6161US/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6161US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6161US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6161US/TR?
JAN1N6161US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6161US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6161US/TR?
For technical support, including JAN1N6161US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6161US/TR requirements.
6.How does Aetrix verify that JAN1N6161US/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6161US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6161US/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6161US/TR?
All JAN1N6161US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6161US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6161US/TR part is unused and in its original packaging.
Return procedure for JAN1N6161US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6161US/TR Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

