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Microchip Technology JAN1N6162AUS/TR
- Part No.:
- JAN1N6162AUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6162AUS/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:9,706
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Product details
Overview
JAN1N6162AUS/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JAN level, with 51.7 V working standoff voltage (VWM), 64.6 V minimum breakdown voltage (V(BR)), and 97.1 V clamping voltage (VC) at 15.4 A peak pulse current (IPP). It delivers 1500 W peak pulse power for 10/1000 µs transients and operates across –55 °C to +175 °C junction temperature range, deployed in high-reliability military avionics power rail protection.
For engineers reviewing the JAN1N6162AUS/TR datasheet, JAN1N6162AUS/TR pinout, JAN1N6162AUS/TR application, or JAN1N6162AUS/TR equivalent, key selection criteria include its MIL-qualified reliability level, bidirectional clamping behavior, glass-body thermal resistance (5.0 °C/W), RoHS-compliant tin/lead terminal plating option, and compatibility with EIA-481-B tape-and-reel handling.
Technical Context
This TVS diode uses hard-glass hermetic construction with internal Category 1 metallurgical bonds to ensure radiation hardness and zero voids-critical for space-grade and defense electronics. Its bidirectional architecture enables symmetrical transient suppression on AC-coupled or floating signal/power lines without polarity concerns.
It meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select levels of IEC61000-4-5 (lightning surge) immunity standards. The device exhibits a 0.100 %/°C temperature coefficient of breakdown voltage (αV(BR)), enabling predictable voltage drift over wide temperature excursions in embedded control systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 51.7 V - Maximum continuous DC or repetitive peak voltage the device blocks without conduction. |
| V(BR) min | 64.6 V @ 20 mA - Minimum voltage at which the device enters controlled avalanche breakdown. |
| VC @ IPP | 97.1 V @ 15.4 A - Clamped voltage during 10/1000 µs surge, defining maximum stress on protected circuitry. |
| PPP | 1500 W - Peak impulse power handling capability, directly limiting survivable surge energy. |
| TJ Range | –55 °C to +175 °C - Full military temperature range supported without derating loss of clamping integrity. |
| RθJEC | 5.0 °C/W - Junction-to-end-cap thermal resistance, enabling accurate thermal modeling for PCB pad design. |
| αV(BR) | 0.100 %/°C - Predictable V(BR) drift rate used to calculate worst-case clamping window in extreme ambient conditions. |
Pinout & Package
The JAN1N6162AUS/TR is housed in a "C"-package (SQ-MELF) voidless hermetically sealed hard-glass case with tungsten slugs and tin/lead-plated copper terminals. No polarity marking is present due to bidirectional operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Bidirectional transient conduction path | Either end serves as anode or cathode depending on transient polarity; no orientation required during placement. |
| End Cap (both ends) | Thermal and electrical interface | Directly contacts PCB pads for heat dissipation and low-inductance surge current return path. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination under thermal cycling, ensuring >20-year field life in sealed enclosures. |
| Category 1 metallurgical bonds | Guarantees bond integrity under mechanical shock (MIL-STD-883 Method 2002) and vibration, critical for airborne platforms. |
| MIL-PRF-19500/516 JAN qualification | Validated screening includes burn-in, temperature cycling, and lot acceptance testing per military specification-no additional qualification needed. |
| Triple-layer passivation | Prevents surface leakage and corrosion in high-humidity or salt-fog environments, maintaining ID ≤ 5 µA at VWM over lifetime. |
Applications
| Aerospace Power Distribution | Military Vehicle Data Buses |
|---|---|
Use Scenario: Protection of 28 V DC primary bus in UAV flight control modules against load dump and inductive switching spikes. IC Role / Device Role / Timing Role: Bidirectional TVS clamping element placed directly across bus rails to limit transient overvoltage to <100 V. Use Value: Prevents latch-up or destruction of downstream DC-DC converters and FPGAs during 1500 W surges with no polarity dependency. | Use Scenario: Surge suppression on RS-485 data lines in armored vehicle C4I systems exposed to EMP and lightning-induced coupling. IC Role / Device Role / Timing Role: Low-capacitance, fast-response transient clamp on differential pair, referenced to chassis ground via end-cap thermal pads. Use Value: Maintains signal integrity while meeting MIL-STD-461G CS115 and IEC61000-4-5 Level 4 immunity requirements. |
| Satellite Power Conditioning | Naval Radar Power Supplies |
Use Scenario: Input-stage protection for radiation-hardened DC-DC regulators in LEO satellite power management units. IC Role / Device Role / Timing Role: Standoff-rated TVS absorbing single-event transients induced by proton bombardment in orbit. Use Value: Leverages inherent radiation hardness (MicroNote 050) and 175 °C max junction rating for uncooled operation in vacuum. | Use Scenario: Secondary-side clamping on 115 V AC-derived 48 V DC supplies feeding naval radar RF amplifiers. IC Role / Device Role / Timing Role: High-energy bidirectional suppressor mounted across output capacitor bank to absorb reflected surge energy. Use Value: Withstands repeated 10/1000 µs surges up to 1500 W without parameter shift-verified per MIL-PRF-19500/516 retest requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6162AUS (commercial grade) | No JAN-level screening; lacks MIL-PRF-19500/516 qualification, burn-in, and lot traceability. | Restricted to non-mission-critical industrial or test equipment where full military reliability is not mandated. | Select only when cost sensitivity outweighs long-term field reliability and audit compliance requirements. |
| JANTX1N6162AUS | Includes JANTX-level screening (more rigorous than JAN), higher test coverage, and extended temperature validation. | Required for programs demanding enhanced reliability assurance beyond baseline JAN, such as strategic missile guidance subsystems. | Choose when system-level failure risk mandates tighter parametric limits and broader environmental validation. |
Compared with JAN1N6162AUS/TR, the commercial 1N6162AUS omits military screening and traceability but shares identical electrical specs and package; JANTX1N6162AUS adds screening rigor and test margin-making it suitable for higher-tier defense programs where failure modes must be statistically bounded.
Availability
JAN1N6162AUS/TR is available at Aetrix Electronics and suitable for aerospace power distribution, military vehicle data buses, satellite power conditioning, and naval radar power supplies requiring stable component supply across extended product lifecycles.
Supply support for JAN1N6162AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and discrete components for aerospace, defense, and industrial markets.
The 1N6138AUS–1N6173AUS series was designed specifically to meet MIL-PRF-19500/516 requirements for hermetically sealed, voidless, high-surge TVS diodes in harsh-environment electronics-emphasizing radiation tolerance, thermal stability, and long-term parametric consistency.
FAQ
What is the clamping voltage of JAN1N6162AUS/TR at its rated peak pulse current?
The JAN1N6162AUS/TR has a maximum clamping voltage (VC) of 97.1 V at 15.4 A peak pulse current (IPP) for a 10/1000 µs waveform. This value defines the upper voltage limit imposed on protected circuitry during surge events and is guaranteed across the full –55 °C to +175 °C operating junction temperature range. The clamping performance remains stable due to Category 1 metallurgical bonds and voidless glass construction in the JAN1N6162AUS/TR.
Is JAN1N6162AUS/TR compatible with lead-free soldering processes?
JAN1N6162AUS/TR features tin/lead-plated copper terminals and is rated for solder temperature up to 260 °C for 10 seconds, making it compatible with standard SnPb reflow profiles. While RoHS-compliant matte-tin versions exist for commercial-grade variants, the JAN1N6162AUS/TR itself is not RoHS-compliant and requires Pb-based soldering. Its thermal resistance (RθJEC = 5.0 °C/W) supports reliable heat extraction during leaded reflow in the JAN1N6162AUS/TR.
Does JAN1N6162AUS/TR require polarity-aware PCB layout?
No-JAN1N6162AUS/TR is a bidirectional TVS diode with symmetrical electrical characteristics, meaning either end functions identically as anode or cathode depending on transient polarity. The device carries no polarity marking and is designed for placement without orientation constraints. This simplifies automated assembly and eliminates risk of reverse installation in high-density layouts using the JAN1N6162AUS/TR.
How does the temperature coefficient affect JAN1N6162AUS/TR's breakdown voltage in operation?
JAN1N6162AUS/TR has a breakdown voltage temperature coefficient (αV(BR)) of 0.100 %/°C. Over a –55 °C to +175 °C junction range, this results in approximately ±23 % variation in V(BR) relative to its 25 °C value of 64.6 V. Engineers must account for this drift when setting safety margins between VWM (51.7 V) and minimum V(BR) in thermally constrained enclosures housing the JAN1N6162AUS/TR.
What packaging format is supplied for JAN1N6162AUS/TR?
JAN1N6162AUS/TR is supplied in EIA-481-B compliant tape-and-reel format, optimized for high-speed SMT placement. The SQ-MELF "C" package has a 0.205–0.245 inch body length (5.21–6.22 mm) and 0.183–0.202 inch diameter (4.65–5.13 mm), with center-pad adhesive option available per datasheet note. Reel quantities and packaging details are coordinated through Aetrix Electronics for the JAN1N6162AUS/TR.
JAN1N6162AUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 51.7V
- Voltage - Breakdown (Min):
- 64.6V
- Voltage - Clamping (Max) @ Ipp:
- 97.1V
- Current - Peak Pulse (10/1000µs):
- 15.4A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6162AUS/TR FAQ
1.How can I place an order for JAN1N6162AUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6162AUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6162AUS/TR reliable?
The price and inventory of JAN1N6162AUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6162AUS/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6162AUS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6162AUS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6162AUS/TR?
JAN1N6162AUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6162AUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6162AUS/TR?
For technical support, including JAN1N6162AUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6162AUS/TR requirements.
6.How does Aetrix verify that JAN1N6162AUS/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6162AUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6162AUS/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6162AUS/TR?
All JAN1N6162AUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6162AUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6162AUS/TR part is unused and in its original packaging.
Return procedure for JAN1N6162AUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6162AUS/TR Tags
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