My Inquiry
My Account
Microchip Technology JAN1N6162US/TR
- Part No.:
- JAN1N6162US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JAN1N6162US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:6,151
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JAN1N6162US/TR from Microsemi is a voidless hermetically sealed, bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JAN level. It provides 51.7 V working standoff voltage (VWM), 64.6 V minimum breakdown voltage (V(BR)), and clamps transients to 97.1 V at 15.4 A peak pulse current (IPP) under 10/1000 µs waveform, delivering 1500 W peak pulse power for lightning surge and ESD protection in avionics power interfaces.
For engineers reviewing the JAN1N6162US/TR datasheet, JAN1N6162US/TR pinout, JAN1N6162US/TR application, or JAN1N6162US/TR equivalent, this part supports high-reliability military systems requiring certified transient suppression with hermetic glass packaging, Category 1 metallurgical bonds, and IEC61000-4-2/4-4/4-5 compliance without polarity marking.
Technical Context
This TVS operates bidirectionally with no polarity-critical for AC-coupled signal lines and ungrounded bus protection. Its hard-glass construction and tungsten slug terminations enable stable thermal resistance (RθJEC = 5.0 °C/W) and operation from −55 °C to +175 °C junction temperature.
The device meets MIL-PRF-19500/516 requirements for JAN-level reliability, including non-sensitivity to ESD per MIL-STD-750 Method 1020 and inherent radiation hardness per MicroNote 050. It delivers consistent clamping performance across its full temperature range with a V(BR) temperature coefficient of 0.100 %/°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 51.7 V maximum continuous standoff voltage - defines highest DC or repetitive peak voltage before conduction begins |
| V(BR) min | 64.6 V at 20 mA - ensures reliable triggering above system operating voltage with margin |
| VC @ IPP | 97.1 V at 15.4 A (10/1000 µs) - limits downstream voltage stress during surge events |
| PPP | 1500 W peak pulse power - sustains high-energy transients like lightning-induced surges |
| ID @ VWM | 5 µA maximum standby leakage - minimizes quiescent power loss in always-on circuits |
| αV(BR) | 0.100 %/°C - quantifies voltage drift over temperature for precision clamp design |
| TJ Range | −55 °C to +175 °C - enables deployment in extreme-environment aerospace and defense platforms |
Pinout & Package
Package: SQ-MELF (Square-end-cap Metal Electrode Leadless Face), hermetically sealed voidless hard glass with tungsten slugs; terminals are tin/lead plated copper; no polarity marking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode | Bidirectional terminal pair | Identical electrical behavior in both directions - no orientation required during placement |
| End Cap (both ends) | Thermal and electrical interface | Direct junction-to-end-cap path enables 5.0 °C/W thermal resistance for high-power dissipation |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic sealing | Prevents moisture ingress and internal corrosion over 20+ year field life in humid or vacuum environments |
| Category 1 metallurgical bonds | Ensures mechanical integrity and low-resistance interconnects under thermal cycling and shock |
| MIL-PRF-19500/516 JAN qualification | Validates screening, testing, and traceability for mission-critical defense electronics procurement |
| Triple-layer passivation | Reduces surface leakage and improves long-term stability of V(BR) and VC parameters |
Applications
| Aerospace Power Bus Protection | Avionics Data Link Interface |
|---|---|
Use Scenario: Protecting 28 V DC aircraft power distribution networks from load dump and lightning-induced surges. IC Role / Device Role / Timing Role: Bidirectional TVS clamping transient energy before it reaches upstream regulators and downstream loads. Use Value: Withstands 1500 W pulses and operates up to +175 °C, enabling direct placement on high-temp power rails without derating. | Use Scenario: Shielding ARINC 429 or MIL-STD-1553 data lines against ESD and coupled transients in flight control units. IC Role / Device Role / Timing Role: Fast-response voltage clamp placed differential across signal pairs to suppress common-mode surges. Use Value: Zero-polarity marking and symmetric clamping allow identical placement on both lines without orientation checks. |
| Tactical Radio Front-End Protection | Ground Vehicle Control Module |
Use Scenario: Safeguarding RF transceiver antenna ports and bias lines from ESD and EMP in handheld radios. IC Role / Device Role / Timing Role: Standoff-rated TVS absorbing sub-100 ns ESD events per IEC61000-4-2 Level 4 (15 kV air). Use Value: 5 µA leakage at 51.7 V minimizes impact on sensitive RF bias networks and detector circuits. | Use Scenario: Securing CAN and sensor inputs in engine control units exposed to ISO 7637-2 pulse 1/2/5a transients. IC Role / Device Role / Timing Role: Primary clamping device on 12 V/24 V supply rails feeding microcontrollers and analog sensors. Use Value: Hermetic SQ-MELF package resists vibration, humidity, and thermal shock in under-hood automotive environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JAN1N6162US | No /TR suffix - bulk pack instead of tape-and-reel; identical electrical specs and qualification | Same circuit function and environmental rating; differs only in packaging format | Select JAN1N6162US/TR for automated SMT assembly; choose JAN1N6162US for manual prototyping or low-volume hand soldering |
| 1N6162AUS | Commercial-grade version - not MIL-qualified; same VWM, V(BR), VC, and PPP values | Lacks JAN-level screening, traceability, and extended temperature validation; unsuitable for DoD contracts | Use 1N6162AUS only in non-military industrial designs where cost sensitivity outweighs certification requirements |
Compared with JAN1N6162US/TR, JAN1N6162US offers identical performance in bulk form for lab use, while 1N6162AUS reduces cost by omitting military screening-making it viable for commercial avionics subsystems where full MIL-PRF-19500/516 compliance isn't mandated.
Availability
JAN1N6162US/TR is available at Aetrix Electronics and suitable for aerospace power conditioning, avionics data interface protection, and tactical radio front-end surge suppression requiring stable component supply across extended product lifecycles.
Supply support for JAN1N6162US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JAN1N6162US/TR belongs to Microsemi's military-qualified TVS diode family, engineered specifically for survivability in mission-critical systems where failure is not an option-emphasizing hermeticity, radiation tolerance, and MIL-PRF-19500/516 compliance.
FAQ
What is the clamping voltage of JAN1N6162US/TR and under what test condition is it specified?
The clamping voltage (VC) of JAN1N6162US/TR is 97.1 V, measured at a peak pulse current (IPP) of 15.4 A using the standard 10/1000 µs double-exponential surge waveform. This value reflects the maximum voltage seen across the device during a high-energy transient event and is critical for ensuring downstream components remain within their absolute maximum ratings. The specification is validated per MIL-PRF-19500/516 test procedures.
Is JAN1N6162US/TR polarity-sensitive, and how should it be mounted on the PCB?
No, JAN1N6162US/TR is a bidirectional TVS with no polarity marking-both ends are electrically identical. It must be placed across the protected line and ground (or differential pair) without regard to orientation. The SQ-MELF package uses square-end-cap terminations for stable placement, and the absence of polarity eliminates orientation errors during automated assembly or rework of JAN1N6162US/TR.
Does JAN1N6162US/TR meet IEC61000-4-5 for lightning surge immunity?
Yes, JAN1N6162US/TR provides protection from secondary effects of lightning per select levels in IEC61000-4-5, as confirmed in the official Microsemi documentation. Its 1500 W peak pulse power rating at 10/1000 µs directly supports Level 3 and Level 4 surge immunity testing when properly integrated into a system-level protection scheme alongside appropriate filtering and layout practices for JAN1N6162US/TR.
What is the maximum junction temperature rating for JAN1N6162US/TR, and how does it affect thermal design?
JAN1N6162US/TR has a maximum junction temperature (TJ) rating of +175 °C, with storage temperature matching that range. Its thermal resistance junction-to-end-cap (RθJEC) is 5.0 °C/W, meaning end-cap cooling is essential for high-duty-cycle operation. Designers must ensure adequate copper area and/or heatsinking at both end caps to maintain TJ ≤ 175 °C under worst-case surge repetition-especially relevant for repeated transients in JAN1N6162US/TR deployments.
How does the JAN qualification level differ from commercial versions like 1N6162AUS?
JAN qualification requires full MIL-PRF-19500/516 compliance-including rigorous screening for defects, lot traceability, extended temperature validation (−55 °C to +175 °C), and radiation hardness per MicroNote 050. In contrast, 1N6162AUS is commercial-grade with identical electrical specs but no military screening or certification. JAN1N6162US/TR is mandatory for DoD contracts; 1N6162AUS suffices only for non-certified industrial use.
JAN1N6162US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 51.7V
- Voltage - Breakdown (Min):
- 64.6V
- Voltage - Clamping (Max) @ Ipp:
- 97.1V
- Current - Peak Pulse (10/1000µs):
- 15.4A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JAN1N6162US/TR FAQ
1.How can I place an order for JAN1N6162US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6162US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6162US/TR reliable?
The price and inventory of JAN1N6162US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6162US/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6162US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6162US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6162US/TR?
JAN1N6162US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6162US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6162US/TR?
For technical support, including JAN1N6162US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6162US/TR requirements.
6.How does Aetrix verify that JAN1N6162US/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6162US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6162US/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6162US/TR?
All JAN1N6162US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6162US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6162US/TR part is unused and in its original packaging.
Return procedure for JAN1N6162US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6162US/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
